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At least 91 records · Page 5

Excitation and tunneling spectra of a fractional quantum Hall system in the thin-cylinder limit

Here, the excitations of fractional quantum Hall effect (FQHE) states have been largely inaccessible to experimental probes until recently. New electron scanning tunneling microscopy (STM) results from Hu et al. [Nat. Phys. 21, 716 (2025)] show promise in detecting and identifying these excited states via the local density of states (LDOS) spectrum. On a torus, there exists a mapping from the lowest Landau level states to a 1D lattice with a Hamiltonian that features dipole moment conservation. In this work, we apply perturbation theory starting from the thin-cylinder limit (𝐿 𝑥 → ∞, 𝐿 𝑦 < 𝑙 𝐵 for torus dimensions 𝐿 𝑥 and 𝐿 𝑦 and magnetic length 𝑙 𝐵 ) to obtain an analytical approach to the low-lying neutral and charged excitations of the 𝜈 = 1/3 FQHE state. Notably, in the thin cylinder, we can systematically enumerate all the low-lying excitations by the patterns of “dipoles” formed by the electron occupation pattern on the 1D lattice. We find that the thin-cylinder limit predicts a significant dispersion of the low-lying neutral excitations but sharpness of the LDOS spectra, which measure charged excitations. We also discuss connections between our work and several different approaches to the FQHE STM spectra, including those using the composite fermion theory. Numerical exact diagonalization beyond the thin-cylinder limit suggests that the energies of charged excitations remain largely confined to a narrow range of energies, which in experiments might appear as a single peak.

Adhidewata, Jyesta M. [University of California, B↗

Atomic structure of different surface terminations of polycrystalline ZnPd

The intermetallic compound ZnPd has been found to have desirable characteristics as a catalyst for the steam reforming of methanol. The understanding of the surface structure of ZnPd is important to optimize its catalytic behavior. However, due to the lack of bulk single-crystal samples and the complexity of characterizing surface properties in the available polycrystalline samples using common experimental techniques, all previous surface science studies of this compound have been performed on surface alloy samples formed through thin-film deposition. In this study, we present findings on the chemical and atomic structure of the surfaces of bulk polycrystalline ZnPd studied by a variety of complementary experimental techniques, including scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), low energy electron microscopy (LEEM), photoemission electron microscopy (PEEM), and microspot low-energy electron diffraction ( μ -LEED). These experimental techniques, combined with density functional theory (DFT)-based thermodynamic calculations of surface free energy and detachment kinetics at the step edges, confirm that surfaces terminated by atomic layers composed of both Zn and Pd atoms are more stable than those terminated by only Zn or Pd layers. DFT calculations also demonstrate that the primary contribution to the tunneling current arises from Pd atoms, in agreement with the STM results. The formation of intermetallics at surfaces may contribute to the superior catalyst properties of ZnPd over Zn or Pd elemental counterparts. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗

Atomic-resolution structural and spectroscopic evidence for the synthetic realization of two-dimensional copper boride

Since the first realization of borophene on Ag(111), two-dimensional (2D) boron nanomaterials have attracted substantial interest because of their polymorphic diversity and potential for hosting solid-state quantum phenomena. Here, we use atomic-resolution scanning tunneling microscopy (STM) and field-emission resonance (FER) spectroscopy to elucidate the structure and properties of atomically thin boron phases grown on Cu(111). Specifically, FER spectroscopy reveals charge transfer and electronic states that strongly differ from the decoupled borophene phases observed on silver, suggesting that the deposition of boron on copper results in strong covalent bonding characteristic of a 2D copper boride. This conclusion is reinforced by detailed STM characterization of line defects that are consistent with density functional theory calculations for atomically thin Cu8B14. This evidence for 2D copper boride is likely to motivate future synthetic efforts aimed at expanding the relatively unexplored family of atomically thin metal boride materials.

Science & Technology - Other Topics↗

Atomic Manipulation of Single Erbium on GaAs(110): From Adatom Motion to Creation and Control of Bistable Substitutions

We demonstrate atomic-scale control over the position and configuration of single erbium (Er) atoms at the GaAs(110) surface using scanning tunneling microscopy (STM). By applying voltage pulses from the STM tip, we drive Er adatoms to move sequentially among three distinct adsorption sites and controllably substitute into Ga lattice sites. The resulting substitutional Er atoms exhibit two isoelectronic configurations that differ by less than one angstrom in lateral position and can be reversibly switched by additional voltage pulses. Differential conductance spectroscopy shows differences in the unoccupied local electronic states for the two substitutional configurations, and an absence of mid-gap states. Preliminary density functional theory (DFT) calculations support these findings, identifying the most stable adsorption and substitutional sites, their relative binding energies, charge states, and local density of states (LDOS) characteristics. Together, the experimental and theoretical results establish a method for precise, reversible manipulation of rare-earth dopants at semiconductor surfaces, opening a pathway to engineer atomic-scale quantum and optoelectronic functionalities.

Poche, Steven [Ohio State University]↗

Data for: Subsurface Interface Structure Controlling Local Electronic Properties of Epitaxial Graphene on SiC(0001)

Recently realized high-mobility semiconducting epitaxial graphene on silicon carbide, provided an important step towards integration of the graphene-based system into active components in post-silicon micro- and nano-electronics. However, the exact atomic-scale structure and the complex bonding configurations of the first epitaxial graphene carbon layer remain an open problem. Our recent report has shed new light on understanding this interface, where the external transverse electric field-dependent dynamic switching behavior of the Cbuffer-SiC bonds was observed. Here, using scanning tunneling microscopy and spectroscopy (STM and STS), we present the direct evidence of silicon (Si) vacancies at the interface and provide their distribution at the topmost reconstructed SiC(0001) layer. Experimental STM and density functional theory modeling data were used in the preparation of figures in a published article in the Journal of Physical Chemistry Letters. Files related to the figures and supplementary materials in the article are present in this dataset in .txt format.

Condensed matter imaging↗

Data for: Subsurface Interface Structure Controlling Local Electronic Properties of Epitaxial Graphene on SiC(0001)

Recently realized high-mobility semiconducting epitaxial graphene on silicon carbide, provided an important step towards integration of the graphene-based system into active components in post-silicon micro- and nano-electronics. However, the exact atomic-scale structure and the complex bonding configurations of the first epitaxial graphene carbon layer remain an open problem. Our recent report has shed new light on understanding this interface, where the external transverse electric field-dependent dynamic switching behavior of the Cbuffer-SiC bonds was observed. Here, using scanning tunneling microscopy and spectroscopy (STM and STS), we present the direct evidence of silicon (Si) vacancies at the interface and provide their distribution at the topmost reconstructed SiC(0001) layer. Experimental STM and density functional theory modeling data were used in the preparation of figures in a published article in the Journal of Physical Chemistry Letters. Files related to the figures and supplementary materials in the article are present in this dataset in .txt format.

Condensed matter imaging↗

Uncertainty quantification and sensitivity analysis of a nuclear thermal propulsion reactor startup sequence

The research presented in this article describes progress in applying stochastic methods, uncertainty quantification, parametric studies, and variance-based sensitivity analysis (also known as Sobol sensitivity analysis) to a full-core model of a nuclear thermal propulsion (NTP) system simulated via the radiation transport code Griffin to simulate neutronics. Our goal is to develop a reduced-order (surrogate) model that can be rapidly sampled with perturbations to multiple input parameters. In this NTP system, reactivity and power feedback affect the rotation of control drums (CDs), which is itself controlled by a hybrid proportional-integral-derivative (PID) controller actuated by the power demand and reactivity feedback from the numerical model. This model uses reactor kinetic feedback (mean generation time [Λ] and effective delayed neutron fraction [ β eff ] from a transient Griffin simulation executed via Griffin’s improved quasi-static solver to provide the kinetic parameters) as inputs to functions that control the CD rotation angle. By investigating numerous stochastic approaches, we developed a dual-purpose surrogate model of the NTP system, using polynomial regression in the Multiphysics Object-Oriented Simulation Environment (MOOSE) Stochastic Tools Module (STM). The trained model can be rapidly sampled while simultaneously perturbing various input parameters, such as coefficients on the PID control or temperature (directly affecting the neutron cross section). The surrogate model delivers accurate (within 5%) results at speeds orders of magnitude faster (minutes, not days of computational time) than the base model. Once the surrogate model has been trained, distributions of the uncertain parameters can be changed at will to investigate the effects of perturbing multiple inputs as well as the effects of these inputs on the model output. For example, coefficients used in the PID control system may vary due to some type of physical interference, or uncertainty may exist in the temperature of the neutron cross sections in various regions of the reactor. A distribution can be placed on these parameters, and operational boundaries can be determined. The goal of this work is to support development of an advanced control system for operating CDs in a functioning NTP system. This work is a scoping study of the MOOSE STM.

21 - SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLAN↗

Energy-gap spectroscopy of superconductors using a tunneling microscope

A unique scanning tunneling microscope (STM) system has been developed for spectroscopy of the superconducting energy gap. High-resolution control of tunnel current and voltage allows for measurement of superconducting properties at tunnel resistance levels 100-1000 greater than that achieved in prior work. The previously used STM methods for superconductor spectroscopy are compared to those developed for the work reported here. Superconducting energy-gap spectra are reported for three superconductors, Pb, PbBi, and NbN, over a range of tunnel resistance. The measured spectra are compared directly to theory.

Le Duc, H. G.↗

Direct control and characterization of a Schottky barrier by scanning tunneling microscopy

Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.

Bell, L. D.↗

Imaging graphite in air by scanning tunneling microscopy - Role of the tip

Atomically resolved images of highly oriented pyrolytic graphite (HOPG) in air at point contact have been obtained. Direct contact between tip and sample or contact through a contamination layer provides a conduction mechanism in addition to the exponential tunneling mechanism responsible for scanning tunneling microscopy (STM) imaging. Current-voltage (I-V) spectra were obtained while scanning in the current imaging mode with the feedback circuit interrupted in order to study the graphite imaging mechanism. Multiple tunneling tips are probably responsible for images without the expected hexagonal or trigonal symmetry. The observations indicate that the use of HOPG for testing and calibration of STM instrumentation may be misleading.

Colton, R. J.↗

The solar simulation test of the ITALSAT thermal structural model

The ITALSAT structural/thermal model (STM) was submitted to a solar simulation test in order to verify the spacecraft thermal design and the thermal mathematical model which will be used to predict the on orbit temperatures. The STM was representative of the flight model in terms of configuration, structures, appendages and thermal hardware; dissipating dummy units were used to simulate the electronic units. The test consisted of the main phases: on station (beginning of life), on station (end of life), and transfer orbit. Preliminary results indicate that the test performances were satisfactory. The spacecraft measured temperatures were up to 15 degrees higher than the predicted ones. This imposes a careful correlation analysis in order to have reliable flight temperature predictions.

Giommi, M.↗

Superconducting phonon spectroscopy using a low-temperature scanning tunneling microscope

The low-temperature scanning tunneling microscope (STM) system described by LeDuc et al. (1987) was used to observe the phonon density of states effects in a superconductor. Using techniques based on those employed in macroscopic tunneling spectroscopy, electron tunneling current-voltage (I-V) spectra were measured for NbN and Pb, and dI/dV vs V spectra were measured using standard analog derivative techniques. I-V measurements on NbN and Pb samples under typical STM conditions showed no evidence for multiparticle tunneling effects.

Leduc, H. G.↗

Imaging Genetic Molecules At Atomic Resolution

Proposed method of imaging informational polymeric biological molecules at atomic resolution enables determination of sequences of component monomers about 10 to the 3rd power to 10 to the 4th power times as fast as conventional methods do. Accelerates research on genetic structures of animals and plants. Also contributes significantly to imaging processes like scanning electron microscopy (SEM), atomic-force microscopy (AFM), and scanning tunneling microscopy (STM) in cases in which necessary to locate or identify small specimens on relatively large backgrounds and subtract background images to obtain images of specimens in isolation. V-grooves on silicon wafer laid out in square pattern, intersections of which marked to identify coordinates. Specimen molecules held in grooves for reproducible positioning and scanning by AFM or STM.

Coles, L. Stephen↗

Initial value and two point boundary value solutions to the Clohessy-Wiltshire equations

The nonhomogeneous Clohessy-Wiltshire (C-W) equations are formulated and solved as an initial value problem in the form structure of linear systems theory. The state transition matrix (STM) and its inverse are obtained explicitly in both Newtonian and Hamiltonian form. It is shown that the STM for the C-2 equations possesses a special property making its inverse easily obtainable. Since solutions to the C-W equations are needed in two-point boundary value form to construct a good mission design tool for orbit transfer, the Lambert problem is solved in the context of the C-W equations.

Mullins, Larry D.↗

Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

The surface of 3C SiC films grown on 6H SiC substrates has been studied by atomic probe microscopy in air. Atomic-scale images of the 3C SiC surface have been obtained by STM which confirm the 111 line type orientation of the cubic 3C layer grown on the 0001 plane type surface of the hexagonal 6H substrate. The nearest-neighbor atomic spacing for the 3C layer has been measured to be 3.29 +/- 0.2 A, which is within 7 percent of the bulk value. Shallow terraces in the 3C layer have been observed by STM to separate regions of very smooth growth in the vicinity of the 3C nucleation point from considerably rougher 3C surface regions. These terraces are oriented at right angles to the growth direction. Atomic force microscopy has been used to study etch pits present on the 6H substrate due to high temperature HCl cleaning prior to CVD growth of the 3C layer. The etch pits have hexagonal symmetry and vary in depth from 50 nm to 1 micron.

Steckl, A. J.↗

The color temperature of (2060) Chiron: A warm and small nucleus

We present three sets of thermal-infrared observations of (2060) Chiron, obtained in 1991, 1993, and 1994. These observations allow the first estimates of the color temperature of Chiron as well as refined estimates of the radius and albedo of its nucleus. 10/20 micrometer color temperatures of 126(sub -6 sup +11) and 137(sub -9 sup +14) K are obtained from the 1993 and 1994 observations, respectively. These temperatures are consistent with the Standard Thermal Model (STM; Lebofsky & Spencer, 1989), but significantly higher than those predicted by the Isothermal Latitude Model. Our estimates of Chiron's radius based on the STM are in agreement with each other, with the observations of Lebofsky et al. (1984), and with recent occultation results (Buie et al., (1993). We obtained values for the radius of 74 +/- 11 km in 1991, 88 +/- 10 and 104 +/- 10 km in 1993, and, 94 +/- 6 and 91 +/- 13 km in 1994.

Campins, H.↗

Thermal Emission Spectroscopy of 1 Ceres: Evidence for Olivine

Thermal emission spectra of the largest asteroid 1 Ceres obtained from the Kuiper Airborne Observatory display features that may provide information on its surface mineralogy. A plot of the Ceres spectrum (calibrated using alpha Boo as a standard) divided by a standard thermal model (STM) is shown. Also shown is the emissivity spectrum deduced from reflectivity measurements for olivine grains <5 microns in diameter. The general shape of the Ceres and the olivine curves agree in essential details, such as the maxima from 8 to 12 microns, the minimum between 12 and 14 microns, the broad peak near 17.5 micron, and the slope beyond 22 micron. (Use of the 10 to 15-micron grain reflectivities provides a better match to the 12- to 14-micron dip. We used a value of unity for beta, the beaming factor associated with small-scale surface roughness in our STM. Adjustment of beta to a lower value raises the long-wavelength side of the Ceres spectrum, providing an even better match to the olivine curve.) The emissivity behavior roughly matches the emission coefficients which were calculated for olivine particles with a particle radius of 3 microns. Their calculations show not only the negative slope from 23 to 25 pm, but a continued decrease past 30 micron. The Ceres emissivity is thus similar to that of small olivine grains from 8 to 30 micron, but olivine's emissivity is lower from 5 to 8 pm.

Witteborn, F. C.↗

"Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

Lu, W. J.↗