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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

New high-efficiency silicon solar cells

A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.

Daud, T.↗
NASA NTRS1985

Materials requirements for high-efficiency silicon solar cells

To achieve higher Si solar cell efficiencies (greater than 20%), better single-crystal Si must be produced. It is believed possible to bring Cz (Czochralski) Si up to the same low recombination level as FZ (Float Zone) Si. It is also desirable that solar cell Si meet the following requirements: long minority carrier lifetime (0.2 ohm-cm p-type with tau less than 500 microsec); repeatedly uniform lifetime (not spread from 50 to 1000 microsec); a lifetime that does not decrease during normal device processing; a silicon wafer sheet that is flat and stays throughout normal device processing; uniform and reasonable mechanical strength; and, manufacture at low cost (less than $50/sq m).

Wolf, M.↗
NASA NTRS1979

Development of High Efficiency (14%) Solar Cell Array Module

High efficiency solar cells required for the low cost modules was developed. The production tooling for the manufacture of the cells and modules was designed. The tooling consisted of: (1) back contact soldering machine; (2) vacuum pickup; (3) antireflective coating tooling; and (4) test fixture.

Iles, P. A.↗
NASA NTRS1980

Space solar cells: High efficiency and radiation damage

The progress and status of efforts to increase the end-of-life efficiency of solar cells for space use is assessed. High efficiency silicon solar cells, silicon solar cell radiation damage, GaAs solar cell performance and radiation damage and 30 percent devices are discussed.

Brandhorst, H., Jr.↗
NASA NTRS1979

Development of an Improved High Efficiency Thin Solar Cell

High efficiency cells (up to 14 AMO at 25 C)were fabricated from 10 - 15 ohm-cm silicon by using screen printed aluminum paste as the alloy source for the production of back surface fields. Thick consistency pastes that have been cured prior to a short heat treatment at 850 C were most effective in achieving these efficiency levels.

Lindmayer, J.↗
NASA NTRS1985

Summary of high-efficiency solar-cell research

High-efficiency solar-cell activities supporting efforts to achieve the DOE Five-Year Plan goals are summarized. Specific objectives are to identify and resolve key generic problems that limit cell efficiency to below theoretically predicted values and to design and fabricate cells having efficiences equal to or greater than 20% (AM1.5). Theoretical curves for various p-n junction cells were shown. The effects of practical barriers on cell efficiency was depicted along with the modeling parameters. Cell design parameters used in the analyses were described. The usefulness and present limitations of the existing modeling capabilities were presented. The historical evolution of the efficiencies of cells made from web and edge-defined film-fed growth (EFG) silicon ribbons were also described. The status of contemporary higher-efficiency technical capabilities and future activities to raise efficiencies were stated.

Kachare, R.↗
NASA NTRS1986

Cell technology: Advanced silicon sheet

The Flat-plate Solar Array (FSA)-sponsored Fourth Silicon Stress/Strain Workshop reviewed, coordinated, and assessed the progress in understanding and controlling stress and strain during the crystal growth of silicon ribbons. dislocation electrical activity and limits on solar cell efficiency, and on studying the effects of dopants on EFG characteristics. Work on silicon for high-efficiency solar cells, stress-strain relationships in silicon ribbon, and high temperature deformation of dendritic web ribbon was also discussed.

Morrison, Andrew D.↗
NASA NTRS1981

Analysis of costs of gallium arsenide and silicon solar arrays for space power applications

A parametric analysis was performed to compare the costs of silicon and gallium arsenide arrays for Earth orbital missions. The missions included electric power in low Earth orbit (LEO), electric power in geosynchronous Earth orbit (GEO), and power for electric propulsion of a LEO to GEO orbit transfer mission. Inputs to the analysis for all missions included launch and purchase costs of the array. For the orbit transfer mission, the launch and purchase costs of the electric propulsion system were added. Radiation flux as a function of altitude and rediation tolerance as a function of cell type were used to determine power degradation for each mission. Curves were generated that show the sensitivity of launch-array cost and total mission cost to a variety of input parameters for each mission. These parameters included mission duration, cover glass thickness, array specific cost, array specific mass, and solar cell efficiency. Solar concentration was considered and the sensitivities of cost to concentration ratio, concentrator costs, and concentrator mass were also evaluated. Results indicate that solar cell development should give a high priority to reducing array costs and that the development of low cost, lightweight, solar concentrators should be pursued.

Jefferies, K. S.↗
NASA NTRS1985

Testing of gallium arsenide solar cells on the CRRES vehicle

A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage.

Trumble, T. M.↗
NASA NTRS1975

Efficiency of silicon solar cells as a function of base layer resistivity

This paper reports on a theoretical study of the limitations on silicon solar-cell efficiency for both n(+)-p and n(+)-p-p(+) type cells. Detailed calculations have been made of solar-cell operation using a general computer analysis program for semiconductor devices. The computer program, which simultaneously solves Poisson's equation and the electron and hole quasi-Fermi level equations, provides an accurate numerical solution of solar-cell operation without limiting assumptions or approximations. It is found that minority-carrier lifetime and heavy doping effects in the n(+) surface region present serious limitations to efficiency in low-resistivity silicon solar cells.

Dunbar, P. M.↗
NASA NTRS1986

Identification of some key parameters limiting the performance of high-efficiency silicon solar cells

This paper presents, for the first time, a detailed sensitivity analysis of key cell parameters on silicon-cell efficiency by incorporating advanced solar cell physics in a sophisticated numerical simulation program. It delineates the true physical barriers to obtaining a high-efficiency silicon solar cell. Specific parameters presently limiting cell efficiency are identified to be the minority carrier lifetime and the recombination velocities at the front and back surfaces. Practical cell efficiencies in the vicinity of 22 percent are estimated to be attainable by using good quality silicon crystal and substantially reducing surface recombination velocities.

Mokashi, Anant R.↗
NASA NTRS2012

Materials That Enhance Efficiency and Radiation Resistance of Solar Cells

A thin layer (approximately 10 microns) of a novel "transparent" fluorescent material is applied to existing solar cells or modules to effectively block and convert UV light, or other lower solar response waveband of solar radiation, to visible or IR light that can be more efficiently used by solar cells for additional photocurrent. Meanwhile, the layer of fluorescent coating material remains fully "transparent" to the visible and IR waveband of solar radiation, resulting in a net gain of solar cell efficiency. This innovation alters the effective solar spectral power distribution to which an existing cell gets exposed, and matches the maximum photovoltaic (PV) response of existing cells. By shifting a low PV response waveband (e.g., UV) of solar radiation to a high PV response waveband (e.g. Vis-Near IR) with novel fluorescent materials that are transparent to other solar-cell sensitive wavebands, electrical output from solar cells will be enhanced. This approach enhances the efficiency of solar cells by converting UV and high-energy particles in space that would otherwise be wasted to visible/IR light. This innovation is a generic technique that can be readily implemented to significantly increase efficiencies of both space and terrestrial solar cells, without incurring much cost, thus bringing a broad base of economical, social, and environmental benefits. The key to this approach is that the "fluorescent" material must be very efficient, and cannot block or attenuate the "desirable" and unconverted" waveband of solar radiation (e.g. Vis-NIR) from reaching the cells. Some nano-phosphors and novel organometallic complex materials have been identified that enhance the energy efficiency on some state-of-the-art commercial silicon and thin-film-based solar cells by over 6%.

Sun, Xiadong↗
NASA NTRS1980

Space solar cells - High efficiency and radiation damage

The proceedings of the Third Solar Cell High Efficiency and Radiation Damage Meeting are outlined. The topics covered included high efficiency silicon solar cells, silicon solar cell radiation damage, GaAs solar cell performance, and 30 percent conversion devices. The study of radiation damage from a fundamental defect-centered basis is discussed and evaluated as a focus of future work. 18% AM0 efficiency and 0.7 V open-circuit voltages are designated as achievable goals for silicon solar cells, and the potential for 30% AM0 efficiencies from monolithic tandem cell designs without sunlight concentration is noted. In addition to its potential for 20% AM0 efficiencies, the GaAs cell offers the possibility of a radiation-insensitive power supply when operated at temperatures near 200 C.

Brandhorst, H. W., Jr.↗
NASA NTRS1985

Proceedings of the Flat-Plate Solar Array Project Workshop on Crystal Gowth for High-Efficiency Silicon Solar Cells

A Workshop on Crystal Growth for High-Efficiency Silicon Solar Cells was held December 3 and 4, 1984, in San Diego, California. The Workshop offered a day and a half of technical presentations and discussions and an afternoon session that involved a panel discussion and general discussion of areas of research that are necessary to the development of materials for high-efficiency solar cells. Topics included the theoretical and experimental aspects of growing high-quality silicon crystals, the effects of growth-process-related defects on photovoltaic devices, and the suitability of various growth technologies as cost-effective processes. Fifteen invited papers were presented, with a discussion period following each presentation. The meeting was organized by the Flat-Plate Solar Array Project of the Jet Propulsion Laboratory. These Proceedings are a record of the presentations and discussions, edited for clarity and continuity.

Dumas, K. A.↗
NASA NTRS1984

Process in manufacturing high efficiency AlGaAs/GaAs solar cells by MO-CVD

Manufacturing technology for mass producing high efficiency GaAs solar cells is discussed. A progress using a high throughput MO-CVD reactor to produce high efficiency GaAs solar cells is discussed. Thickness and doping concentration uniformity of metal oxide chemical vapor deposition (MO-CVD) GaAs and AlGaAs layer growth are discussed. In addition, new tooling designs are given which increase the throughput of solar cell processing. To date, 2cm x 2cm AlGaAs/GaAs solar cells with efficiency up to 16.5% were produced. In order to meet throughput goals for mass producing GaAs solar cells, a large MO-CVD system (Cambridge Instrument Model MR-200) with a susceptor which was initially capable of processing 20 wafers (up to 75 mm diameter) during a single growth run was installed. In the MR-200, the sequencing of the gases and the heating power are controlled by a microprocessor-based programmable control console. Hence, operator errors can be reduced, leading to a more reproducible production sequence.

Yeh, Y. C. M.↗