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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

Source record↗
NASA NTRS1982

Flat-plate solar array project. Task 1: Silicon material. Investigation of the hydrochlorination of SiC14

A two inch diameter stainless steel reactor was designed and built to operate at pressures up to 500 psig for the experimental studies on the hydrochlorination of SiCl4 and metallurgical grade (m.g.) silicon metal to SiHCl3. In order to clearly see the effect of pressure, the experiments were carried out at low reactor pressures of 73 psig and 150 psig, respectively. A large pressure effect on the hydrochlorination reaction was observed between the results of the low pressure experiments and the results of the high pressure experiments. In general, higher pressure produces a higher conversion of SiHCl3, but at a lower reaction rate. The effect of temperature on the reaction rate was studied at 73 psig. Higher reaction temperature gave a higher conversion and a higher reaction rate. Samples of the materials used to construct the hydrochlorination reactor were prepared for corrosion tests.

Mui, J. Y. P.↗
NASA NTRS1982

Flat-plate collector research area: Silicon material task

Silane decomposition in a fluidized-bed reactor (FBR) process development unit (PDU) to make semiconductor-grade Si is reviewed. The PDU was modified by installation of a new heating system to provide the required temperature profile and better control, and testing was resumed. A process for making trichlorosilane by the hydrochlorination of metallurgical-grade Si and silicon tetrachloride is reported. Fabrication and installation of the test system employing a new 2-in.-dia reactor was completed. A process that converts trichlorosilane to dichlorosilane (DCS), which is reduced by hydrogen to make Si by a chemical vapor deposition step in a Siemens-type reactor is described. Testing of the DCS PDU integraled with Si deposition reactors continued. Experiments in a 2-in.-dia reactor to define the operating window and to investigate the Si deposition kinetics were completed.

Lutwack, R.↗
NASA NTRS1977

Silicon materials task of the low cost solar array project, phase 2

The object of phase 2 of this program is to investigate and define the effects of various processes, contaminants and process-contaminant interactions in the performance of terrestrial solar cells. The major effort this quarter was in the areas of crystal growth and thermal processing, comparison of impurity effects in low and high resistivity silicon, modeling the behavior of p-type ingots containing Mo, and C and, quantitative analysis of bulk lifetime and junction degradation effects in contaminated solar cells. The performance of solar cells fabricated on silicon web crystals grown from melts containing about 10 to the 18th power/cu cm of Cr, Mn, Fe, Ni, Ti, and V, respectively were measured. Deep level spectroscopy of metal-contaminated ingots was employed to determine the level and density of recombination centers due to Ti, V, Ni, and Cr.

Hopkins, R. H.↗
NASA NTRS1982

Process Research ON Semix Silicon Materials (PROSSM)

A cost effective process sequence was identified, equipment was designed to implement a 6.6 MW per year automated production line, and a cost analysis projected a $0.56 per watt cell add-on cost for this line. Four process steps were developed for this program: glass beads back clean-up, hot spray antireflective coating, wave soldering of fronts, and ion milling for edging. While spray dopants were advertised as an off the shelf developed product, they were unreliable with shorter than advertised shelf life.

Wohlgemuth, J. H.↗
NASA NTRS1984

Flat-plate solar array project process development area, process research of non-CZ silicon material

The program is designed to investigate the fabrication of solar cells on N-type base material by a simultaneous diffusion of N-type and P-type dopants to form an P(+)NN(+) structure. The results of simultaneous diffusion experiments are being compared to cells fabricated using sequential diffusion of dopants into N-base material in the same resistivity range. The process used for the fabrication of the simultaneously diffused P(+)NN(+) cells follows the standard Westinghouse baseline sequence for P-base material except that the two diffusion processes (boron and phosphorus) are replaced by a single diffusion step. All experiments are carried out on N-type dendritic web grown in the Westinghouse pre-pilot facility. The resistivities vary from 0.5 (UC OMEGA)cm to 5 (UC OMEGA)cm. The dopant sources used for both the simultaneous and sequential diffusion experiments are commercial metallorganic solutions with phosphorus or boron components. After these liquids are applied to the web surface, they are baked to form a hard glass which acts as a diffusion source at elevated temperatures. In experiments performed thus far, cells produced in sequential diffusion tests have properties essentially equal to the baseline N(+)PP(+) cells. However, the simultaneous diffusions have produced cells with much lower IV characteristics mainly due to cross-doping of the sources at the diffusion temperature. This cross-doping is due to the high vapor pressure phosphorus (applied as a metallorganic to the back surface) diffusion through the SiO2 mask and then acting as a diffusant source for the front surface.

Campbell, R. B.↗
NASA NTRS1984

Process Research of Polycrystalline Silicon Material (PROPSM)

An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

Culik, J. S.↗
NASA NTRS1985

Flat-plate solar array project process development area process research of non-CZ silicon material

Three sets of samples were laser processed and then cell processed. The laser processing was carried out on P-type and N-type web at laser power levels from 0.5 joule/sq cm to 2.5 joule/sq cm. Six different liquid dopants were tested (3 phosphorus dopants, 2 boron dopants, 1 aluminum dopant). The laser processed web strips were fabricated into solar cells immediately after laser processing and after various annealing cycles. Spreading resistance measurements made on a number of these samples indicate that the N(+)P (phosphorus doped) junction is approx. 0.2 micrometers deep and suitable for solar cells. However, the P(+)N (or P(+)P) junction is very shallow ( 0.1 micrometers) with a low surface concentration and resulting high resistance. Due to this effect, the fabricated cells are of low efficiency. The maximum efficiency attained was 9.6% on P-type web after a 700 C anneal. The main reason for the low efficiency was a high series resistance in the cell due to a high resistance back contact.

Source record↗
NASA NTRS1984

Polycrystalline silicon material availability and market pricing outlook for 1980 through 1988

The results of the second JPL update to an original report to assess the availability and prices of polycrystalline Si for solar cells in the 1983-88 interval are reported. It is noted that the demand for poly-Si for solar cells competes with the demand for the same material for semiconductors, although the solar cell industry can use material rejected from the semiconductor industry. A sufficient supply is projected for the 6 yr period, rising from 3224 metric tons to 10,220 metric tons in 1988, with prices dropping from the 1980 level of $140/kg to $25/kg. The price reduction and improved production are noted to be due in large part to DOE efforts at defining lower-cost production processes.

Costogue, E. N.↗
NASA NTRS2011

Possible Responsibility of Silicone Materials for Degradation of the CO2 Removal System in the International Space Station

From data concerning the degradation of the CO2 removal system in the International Space Station (ISS) two important features were apparent: (1) The atmosphere within the International Space Station (ISS) contained many organic compounds including alcohols, halocarbons, aldehydes, esters, and ketones, inter alia. Various cyclosiloxanes Dn, hexamethylcyclotrisiloxane (D3) and its higher homologs (D4) and (D5) are also present presumably due to offgassing. (2) Screens within the zeolite-containing canisters, used for the removal of CO2, exhibited partial clogging due to zeolitic fragments (dust) along with "sticky" residues, that in toto significantly reduced the efficiency of the CO2 removal process. Samples of the ISS fresh zeolite, used zeolite, filter clogging zeolite particles and residual polymeric materials were examined using, inter alia, NMR, EM and HRSEM. These data were compared to equivalent samples obtained prior and subsequent to Dn polymerization experiments performed in our laboratories using the clean ISS zeolite samples as catalyst. Polysiloxane materials produced were essentially equivalent in the two cases and the EM images demonstrate a remarkable similarity between the ISS filter zeolite samples and the post-polymerization zeolite material from our experiments. In this regard even the changes in the Al/Si ratio from the virgin zeolite material to the filter samples and the post-polymerization laboratory samples samples is noteworthy. This research was supported by a contract from the Boeing Company

Baeza, Mario↗