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DOE OSTI2024

Long‐Range Non‐Coulombic Coupling at the LaAlO 3 /SrTiO 3 Interface

The LaAlO 3 /SrTiO 3 interface hosts a plethora of gate‐tunable electronic phases. Gating of LaAlO 3 /SrTiO 3 interfaces is usually assumed to occur electrostatically. However, increasing evidence suggests that non‐local interactions can influence and, in some cases, dominate the coupling between applied gate voltages and electronic properties. Here, quasi‐1D ballistic electron waveguides are sketched at the LaAlO 3 /SrTiO 3 interface as a probe to understand how gate tunability varies as a function of spatial separation. Gate tunability measurements reveal the scaling law to be at odds with the pure electrostatic coupling observed in traditional semiconductor systems. The non‐Coulombic gating at the interface is attributed to a long‐range nanoelectromechanical coupling between the gate and electron waveguide, possibly mediated by the ferroelastic domains in SrTiO 3 . The long‐range interactions at the LaAlO 3 /SrTiO 3 interface add unexpected richness and complexity to this correlated electron system.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Pushing the performance limits of long wavelength interband cascade lasers using innovative quantum well active regions

Here, we report significantly enhanced device performance in long wavelength interband cascade lasers (ICLs) by employing a recently proposed innovative quantum well (QW) active region containing strained InAsP layers. These ICLs were able to operate at wavelengths near 14.4 μm, the longest ever demonstrated for III–V interband lasers, implying great potential of ICLs to cover an even wider wavelength range. Also, by applying the aforesaid QW active region configuration on ICLs at relatively short wavelengths, ICLs were demonstrated at a low threshold current density (e.g., 13 A/cm 2 at 80 K) and at temperatures up to 212 K near 12.4 μm, more than 50 K higher than the previously reported ICLs with the standard W-shape QW active region at similar wavelengths. This suggests that the QW active region with InAsP layers can be used to improve device performance at the shorter wavelengths.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1981

Four- and five-layer silicon-clad dielectric waveguides

Computer modeling studies conducted on four-layer silicon-clad dielectric waveguides indicate that the attenuation (alpha) and mode index (beta/K) behave as exponentially damped sinusoids as the silicon thickness is increased. The observed effect can be explained quite simply as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high-refractive index silicon. The attenuation and mode index are significantly altered by conductivity changes in the silicon; an amplitude modulator and an intensity modulator were proposed using these results. Predicted high attenuations in the device may be reduced significantly with a silicon dioxide buffer layer between the semiconductor and the polystyrene guide. Experimental confirmation of the predicted characteristics is still necessary. A number of thin-silicon film waveguides have been RF sputtered but attenuation measurements to verify the damped oscillatory behavior are forthcoming. Conductivity variations of the silicon should demonstrate the modulation capabilities.

Mcwright, G.↗

DOE OSTI2022

Correlated nanoelectronics and the second quantum revolution

The growing field of correlated nanoelectronics exists at the intersection of two established fields: correlated oxide electronics and semiconductor nanoelectronics. The development of quantum technologies that exploit quantum coherence and entanglement for the purposes of computation, simulation, and sensing will require complex material properties to be controlled at nanoscale dimensions. Heterostructures and nanostructures formed at the interface between LaAlO 3 and SrTiO 3 exhibit striking behavior that arises from the ability to program the conductive behavior at extreme nanoscale dimensions. The active electronic layer, SrTiO 3 , exhibits a wide range of gate-tunable phenomena such as ferroelectricity, ferroelasticity, magnetism, superconductivity, and spin–orbit coupling, all of which can be controlled at the nanoscale using two reversible methods: conductive atomic force microscope lithography and ultra-low-voltage electron beam lithography. Mesoscopic devices such as single-electron transistors and quasi-one-dimensional electron waveguides can be “sketched” using these techniques, and the properties of these devices differ significantly from those created from traditional semiconductors, such as Si or GaAs. The strongly correlated nature of the SrTiO 3 system is evident from superconducting behavior as well as a state in which electrons are paired outside the superconducting state. A highly exotic phase was discovered in which a degenerate quantum liquid is formed from bound states of n = 2, 3, 4, … electrons. Further development of correlated nanoelectronics based on the LaAlO 3 /SrTiO 3 system can potentially lead to a general platform for quantum simulation as well as a pathway for the development of highly entangled states of multiple photons.

36 MATERIALS SCIENCE↗

NASA NTRS2011

Integrated Arrays on Silicon at Terahertz Frequencies

In this paper we explore various receiver font-end and antenna architecture for use in integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies and use of novel integrated antennas with silicon micromachining are reported. We report novel stacking of micromachined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages which easily leads to the development of 2- dimensioanl multi-pixel receiver front-ends in the terahertz frequency range. We also report an integrated micro-lens antenna that goes with the silicon micro-machined front-end. The micro-lens antenna is fed by a waveguide that excites a silicon lens antenna through a leaky-wave or electromagnetic band gap (EBG) resonant cavity. We utilized advanced semiconductor nanofabrication techniques to design, fabricate, and demonstrate a super-compact, low-mass submillimeter-wave heterodyne frontend. When the micro-lens antenna is integrated with the receiver front-end we will be able to assemble integrated heterodyne array receivers for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.

silicon micromaching↗

DOE OSTI2021

Spectral signatures of transverse optical modes in semiconductor nanowires

In order to build nanophotonic devices, it is important to understand and ultimately control the optical mode structure within potential components such as nanoscale waveguides. However, experimental characterization of such modes in the optical regime is difficult due to the nanoscale dimensions of such components and the perturbations that would be induced by a near-field probe. Here, we demonstrate a probe-free, far-field method to characterize the optical modes within GaN nanowires (NWs) based on a novel off-axis scanning confocal microscope system. Using this microscope, we observe spectral signatures resulting from lateral leakage of waveguide modes when they exceed their respective cutoff limits. We identify these modes within hyperspectral images using an analytical model coupled with finite element simulations. The model can also be used to predict the spectral signatures for given geometrical and dielectric parameters, which enabled us to deduce the transverse dimension of the NW from hyperspectral images with an accuracy of ∼ <#comment/> 30 nm .

Wang, Maoji↗

NASA NTRS2003

Narrow linewidth single-mode semiconductor laser development for coherent detection lidar

High power, tunable, single mode, narrow linewidth semiconductor lasers in the 2.05-(micro)m wavelength region are needed to develop semiconductor laser reference oscillators for optical remote sensing from Earth orbit. 2.05-I1/4m narrow linewidth monolithic distributed feedback (DFB) and distributed Bragg reflector (DBR) with the external grating ridge waveguide lasers fabricated from epitaxially grown InGaAs/InGaAsP/InP and in InGaAsSb/AlGaAsSb/GaSb heterostructures are reported.

single mode↗

NASA NTRS2009

Phase Locking of a 2.7 THz Quantum Cascade Laser to a Microwave Reference

We demonstrate the phase locking of a 2.7 THz metal-metal waveguide quantum cascade laser (QCL) to an external microwave signal. The reference is the 15th harmonic, generated by a semiconductor superlattice nonlinear device, of a signal at 182 GHz, which itself is generated by a multiplier chain (x 12) from a microwave synthesizer at approx. 15 GHz. Both laser and reference radiations are coupled into a bolometer mixer, resulting in a beat signal, which is fed into a phase-lock loop. The spectral analysis of the beat signal confirms that the QCL is phase locked. This result opens the possibility to extend heterodyne interferometers into the far-infrared range.

Khosropanah, P.↗

NASA NTRS2004

THz semiconductor-based front-end receiver technology for space applications

Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.

Schottky diode multipliers↗

NASA NTRS2014

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 104 at 10 mHz. The PWECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

planar-waveguide↗

DOE OSTI2025

Monolithic AlScN/SiC phononic waveguides for scalable acoustoelectric and quantum devices

Unlike conventional surface acoustic wave devices, phononic waveguide systems enable higher circuit density and stronger strain and piezoelectric fields, making them promising for advanced acoustoelectric and quantum applications. One such material system for generating and guiding phonons at gigahertz frequencies is AlScN on SiC, which can be synthesized by sputter depositing AlScN directly onto SiC wafers. The AlScN on the SiC platform allows for tightly vertically-confined acoustic modes with high electromechanical coupling, high speed of sound, and simple fabrication of strip and rib waveguides. Until now, this system has only been studied as a slab waveguide platform, i.e., without any lateral waveguiding. Here, we demonstrate a two-dimensionally confined phononic architecture in AlScN on SiC that supports guided modes at 2.95 and 4.05 GHz. These modes exhibit strong electromechanical coupling coefficients (k 2 = 4.27%) and propagation losses on the order of 10 dB/mm. Furthermore, this architecture is well-suited for phononic routing and power-efficient active or nonlinear devices such as amplifiers, mixers, and oscillators, and is compatible with the integration of quantum systems, including vacancy centers, charge carriers, photons, and spins, either embedded in SiC or heterogeneously integrated on the surface.

Electrical components↗

NASA NTRS1984

Supermode analysis of phase-locked arrays of semiconductor lasers

The optical characteristics of phase-locked semiconductor laser arrays are formulated in terms of the array supermodes, which are the eigenmodes of the composite-array waveguide, by using coupled-mode theory. These supermodes are employed to calculate the near fields, the far fields, and the difference in the longitudinal-mode oscillation wavelengths of the array. It is shown that the broadening in the far-field beam divergence, as well as the broadening of each of the longitudinal modes that were observed in phase-locked arrays, may arise from the excitation of an increasing number of supermodes at increasing pumping levels.

Kapon, E.↗

NASA NTRS1992

Laterally Coupled Distributed-Feedback Lasers

Distributed-feedback semiconductor lasers of proposed design called "laterally coupled" features Bragg gratings located on top surfaces next to sides of ridge waveguides overlying gain regions of laser resonators.

Lang, Robert J.↗

NASA NTRS2010

NASA Tech Briefs, December 2010

Topics include: Coherent Frequency Reference System for the NASA Deep Space Network; Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers; 180-GHz I-Q Second Harmonic Resistive Mixer MMIC; Ultra-Low-Noise W-Band MMIC Detector Modules; 338-GHz Semiconductor Amplifier Module; Power Amplifier Module with 734-mW Continuous Wave Output Power; Multiple Differential-Amplifier MMICs Embedded in Waveguides; Rapid Corner Detection Using FPGAs; Special Component Designs for Differential-Amplifier MMICs; Multi-Stage System for Automatic Target Recognition; Single-Receiver GPS Phase Bias Resolution; Ultra-Wideband Angle-of-Arrival Tracking Systems; Update on Waveguide-Embedded Differential MMIC Amplifiers; Automation Framework for Flight Dynamics Products Generation; Product Operations Status Summary Metrics; Mars Terrain Generation; Application-Controlled Parallel Asynchronous Input/Output Utility; Planetary Image Geometry Library; Propulsion Design With Freeform Fabrication (PDFF); Economical Fabrication of Thick-Section Ceramic Matrix Composites; Process for Making a Noble Metal on Tin Oxide Catalyst; Stacked Corrugated Horn Rings; Refinements in an Mg/MgH2/H2O-Based Hydrogen Generator; Continuous/Batch Mg/MgH2/H2O-Based Hydrogen Generator; Strain System for the Motion Base Shuttle Mission Simulator; Ko Displacement Theory for Structural Shape Predictions; Pyrotechnic Actuator for Retracting Tubes Between MSL Subsystems; Surface-Enhanced X-Ray Fluorescence; Infrared Sensor on Unmanned Aircraft Transmits Time-Critical Wildfire Data; and Slopes To Prevent Trapping of Bubbles in Microfluidic Channels.

Source record↗

DOE OSTI2025

Efficient on-chip terahertz generation and detection with GaN photoconductive emitters

Photoconductive emitters for terahertz generation hold promise for highly efficient down-conversion of optical photons because it is not constrained by the Manley-Rowe relation. Existing terahertz photoconductive devices, however, faces limits in efficiency due to the semiconductor properties of commonly used GaAs materials. Here, we demonstrate that large bandgap semiconductor GaN, characterized by its high breakdown electric field, facilitates the highly efficient generation of terahertz waves in a coplanar stripline waveguide. Towards this goal, we investigated the excitonic contribution to the electro-optic response of GaN under static electric field both through experiments and first-principles calculations, revealing a robust excitonic Stark shift. Using this electro-optic effect, we developed a novel ultraviolet pump-probe spectroscopy for in-situ characterization of the terahertz electric field strength generated by the GaN photoconductive emitter. Our findings show that terahertz power scales quadratically with optical excitation power and applied electric field over a broad parameter range. We achieved an optical-to-terahertz conversion efficiency approaching 100% within the 0.03–1 THz bandwidth at the highest bias field (116 kV/cm) in our experiment. Further optimization of GaN-based terahertz generation devices could achieve even greater optical-to-terahertz conversion efficiencies.

Uzundal, Can B↗

NASA NTRS1993

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Jordan, Rebecca H.↗

NASA NTRS1985

Gain saturation effects in supermodes of phase-locked semiconductor laser arrays

A basic modal analysis that includes gain saturation effects in phase-locked semiconductor laser arrays is presented. For a particular supermode operation, different lasers in the array emit different amounts of light, and hence their (waveguide) propagation constants are modified differently. Solving the lasers' rate equations self-consistently with the coupled-mode wave equations seems to provide an answer that is in much better agreement with experimental results than the result using only the coupled-mode analysis.

Katz, J.↗

NASA NTRS2002

Novel On-wafer Radiation Pattern Measurement Technique for MEMS Actuator Based Reconfigurable Patch Antennas

The paper presents a novel on-wafer, antenna far field pattern measurement technique for microelectromechanical systems (MEMS) based reconfigurable patch antennas. The measurement technique significantly reduces the time and the cost associated with the characterization of printed antennas, fabricated on a semiconductor wafer or dielectric substrate. To measure the radiation patterns, the RF probe station is modified to accommodate an open-ended rectangular waveguide as the rotating linearly polarized sampling antenna. The open-ended waveguide is attached through a coaxial rotary joint to a Plexiglas(Trademark) arm and is driven along an arc by a stepper motor. Thus, the spinning open-ended waveguide can sample the relative field intensity of the patch as a function of the angle from bore sight. The experimental results include the measured linearly polarized and circularly polarized radiation patterns for MEMS-based frequency reconfigurable rectangular and polarization reconfigurable nearly square patch antennas, respectively.

Simons, Rainee N.↗