Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “semiconductor compounds”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

78 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Map of the Zintl AM 2 Pn 2 Compounds: Influence of Chemistry on Stability and Electronic Structure

The AM 2 Pn 2 (A= Ca, Sr, Ba, Yb, Mg; M = Zn, Cd, Mg; and Pn = N, P, As, Sb, Bi) family of Zintl phases has been known as thermoelectric materials and has recently gained much attention for highly promising materials for solar absorbers in single-junction and tandem solar cells. In this paper, we will, from first principles, explore the entire family of AM 2 Pn 2 compounds in terms of their ground-state structure, thermodynamic stability, and electronic structure. We also perform photoluminescence spectroscopy on bulk powder and thin film samples to verify our results, including the first measurements of the band gaps of SrCd 2 P 2 and CaCd 2 P 2 . The AM 2 Pn 2 compounds exhibit broad stability, are mostly isostructural to CaAl 2 Si 2 (P$\overline{3}$m1), and cover a wide range of band gaps from 0 to beyond 3 eV. This could make them useful for a variety of purposes, for which we propose several candidates, such as CaZn 2 N 2 for tandem top cell solar absorbers and SrCd 2 Sb 2 and CaZn 2 Sb 2 for infrared detectors. By examining the band structures of the AM 2 Pn 2 , we find that Mg 3 Sb 2 has the most promise as a thermoelectric material due to several off-Γ valence band pockets, which are unique to it among the compositions studied here.

14 SOLAR ENERGY↗
DOE OSTI2026

Beyond Thermal Limits: Manipulating Reactive Intermediate Coverages and Turnover Rates via Visible Photon-Mediated Catalysis on Rh-Doped Perovskite Oxides

Catalyst behavior depends on surface adsorbate energetics that are constrained by scaling relationships on metal surfaces. External stimuli (e.g., photons), however, can disrupt these limitations by modulating key intermediate coverages via non-thermal reaction pathways. Here, low-energy visible photon fluxes are utilized to selectively control coverages of strongly bound intermediates on isolated Rh active sites doped within a semiconductor perovskite oxide host (SrTiO 3 ). Red light (632 nm) facilitates selective photolytic CO desorption from rhodium gem-dicarbonyl (Rh(CO) 2 ) species that are ubiquitous reaction intermediates, including for the probe reaction studied herein CO oxidation to CO 2 . Thermochemical CO 2 formation rates (408 K) on Rh-doped SrTiO 3 are limited by adsorbed CO, exhibiting a negative apparent CO rate order (−0.6) and a positive O 2 rate order (+0.4). Arrhenius analyses, anaerobic CO oxidation measurements, and in situ spectroscopies assert that, thermochemically, lattice oxygens from the doped perovskite contribute to CO 2 formation rates. Notably, under red light illumination (0.76–2.02 W cm –2 ), the apparent CO rate order shifts to positive (+1). This, combined with decreasing apparent activation energies and CO coverages (wavelength-agnostic) with increasing photon flux, indicates that photons act selectively toward driving Rh(CO) 2 photolysis, even within complex reaction networks, thereby enhancing Rh accessibility, O 2 dissociation, and consequent rates. Finally, low-energy red light enables more stoichiometric feeds, leading to 650% higher CO 2 rates than those achieved thermally. Overall, this work elucidates how low-energy light can be leveraged, not just to improve reaction rates, but to selectively affect rates of individual elementary steps and key intermediate coverages, thereby breaking conventional scaling relationships that limit thermal catalyst performance.

catalysts↗
DOE OSTI2025

Rb 4 CuSb 2 Cl 11 and Rb 2 In 0.91(0.2) Sb 0.09 Cl 5 ·H 2 O: Wide Band Gap 0D Metal Halide Semiconductors

Herein, we report the discovery, structural and photophysical characterization of a new zero-dimensional (0D) lead-free all-inorganic halide, Rb 4 CuSb 2 Cl 11 , which adopts a new structure type. Single-crystal X-ray diffraction (SCXRD) shows that the structure consists of isolated, distorted seesaw [SbCl 4 ] − and trigonal planar [CuCl 3 ] 2− units, separated by Rb + cations that provide charge balance. Optoelectronic measurements and density functional theory (DFT) calculations indicate an indirect band gap of 2.89 eV, making it a candidate for wide-bandgap optoelectronic applications. Electrical resistivity was measured at 1.29 × 10 10 Ω·cm, and the trap-state density (n trap ) was found to be 7.44 × 10 10 cm −3 . Attempts to synthesize substitution analogs of Rb 4 CuSb 2 Cl 11 led to the synthesis of Rb 2 In 0.91(0.2) Sb 0.09 Cl 5 ·H 2 O, which was erroneously reported as Rb 2 SbCl 5 O in a previous study. Rb 2 In 0.91(0.2) Sb 0.09 Cl 5 ·H 2 O adopts a vacancyordered perovskite structure and exhibits broad-band yellow emission under UV excitation. The measured photoluminescence quantum yield (PLQY) for Rb 2 In 0.91 (0.2)Sb 0.09 Cl 5 ·H 2 O is 18.2%. These findings add to the growing class of quaternary metal halides with multiple cation and anion compositions, expanding the chemical phase space for the discovery of new materials with functional properties.

Crystal structure↗
DOE OSTI2025

Spatial variation of the low-temperature micro-photoluminescence of THM-grown CdZnTeSe

The quaternary compound CdZnTeSe (CZTS) has emerged as a next-generation detector material. Unlike CdZnTe (CZT), CZTS has the distinct advantages of little or no sub-grain boundary networks and a much lower concentration of Te inclusions, plus better compositional homogeneity. Thus, the material is expected to offer better spatial charge-transport homogeneity compared to CZT. However, an inhomogeneous distribution of point defects in both CZT and CZTS, such as Cd vacancies and residual impurities, can impose additional spatial inhomogeneity of the resistivity, carrier mobilities, and carrier lifetimes of the material. To investigate the spatial distribution of such defects in CZTS, low-temperature photoluminescence (PL) spectroscopic studies were performed at different positions along a single crystalline CZTS sample surface, which was grown by the traveling heater method (THM). In conclusion, the intensity variation of the PL emission of excitons bound to a neutral acceptor defect (A 0 , X), which is likely dominated by an acceptor like Cu-related level, with respect to the PL emission line from a neutral donor-bound exciton (D 0 , X) exhibited significant spatial variation, while the peak energy positions were approximately uniform due to the high compositional and bandgap homogeneity of the material.

II-VI semiconductor↗
DOE OSTI2026

Mechanism of Vapor-Phase Infiltration of Organometallic Hf in Poly(Methyl Methacrylate) for Hybrid Resist Applications

Inorganic–organic hybrid thin films synthesized by vapor-phase infiltration (VPI) of metal oxides into organic photoresists, such as poly(methyl methacrylate) (PMMA), have recently demonstrated their utility in extreme ultraviolet lithography, critical for angstrom-era semiconductor device miniaturization. Hafnium oxide infiltration has been reported recently for this purpose, but its detailed VPI mechanism has remained largely unexplored. In this study, we investigated the VPI characteristics and mechanisms of tetrakis(dimethylamido)hafnium (TDMAHf)─the hafnium precursor predominantly used for VPI in the field─into PMMA and examined its impact on electron-beam lithography (EBL) exposure behavior. VPI was performed at temperatures ranging from 85 to 150 °C, with chemical interactions characterized using infrared reflection-absorption spectroscopy, and resist patterning performance was evaluated through EBL dose-sensitivity assessments. The results indicate that TDMAHf forms a reversible adduct with PMMA at temperatures up to 120 °C, whereas at 150 °C, covalent bond formation occurs, most likely via dealkylation that leads to acetate formation. EBL studies reveal that resist sensitivity is influenced by both infiltration temperature and developer selection, with aqueous isopropyl alcohol development demonstrating enhanced sensitivity compared to organic solvent-based development. The optimized infiltration protocol at 120 °C ensures a uniform inorganic distribution without compromising resist dissolution. These findings not only help refine hybrid resist patterning performance but also offer insights potentially applicable to the VPI of other homoleptic metal-amide organometallic VPI precursors that include TDMA ligands.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Effect of lithium diffusion into Ga 2 O 3 thin films

The integration of lithium based compounds (e.g., Li:NiO/Ga 2 O 3 , LiGa 5 O 8 /Ga 2 O 3 ) in Ga 2 O 3 based pn-heterojunctions raises concerns about interface stability, i.e., Li diffusion effects on Ga 2 O 3 properties. In this work the ex-situ diffusion of Li is investigated in three different Ga 2 O 3 epilayers systems [(001) κ-Ga 2 O 3 and (−201) β-Ga2O3 heteroepitaxy on (001) α-Al 2 O 3 , and (010) β-Ga 2 O 3 homoepitaxy] at relevant temperatures for the synthesis / processing of Li-based epilayers. It is here experimentally demonstrated and quantified the Li diffusion in all the investigated Ga 2 O 3 epilayers systems and Li bulk (D Li,bulk ) and 2D defects (D Li,2D ) diffusion coefficients are provided. In the case of the (010) β-Ga 2 O 3 homoepitaxial layer (nominally free of structural defects), hybrid functional theory calculations foresee a diffusion mechanism mediated by Ga vacancies (VGa). Moreover, in the (010) β-Ga 2 O 3 homo-layer a significant effect on its functional properties (e.g., additional Raman vibrational modes, induced conductivity in an otherwise insulating sample) upon the Li-diffusion process is experimentally highlighted and tentatively related to the passivation of acceptor defects (i.e., formation of V Ga -nLi complexes).

Defects↗