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At least 91 records · Page 5

Linear and nonlinear benchmarks between the CLT code and the M3D-C1 code for the 2/1 resistive tearing mode and the 1/1 resistive kink mode

Here, the linear and nonlinear benchmarks between the CLT code and the M3D-C1 code for the 2/1 resistive tearing mode and the 1/1 resistive kink mode are presented. CLT is an explicit finite difference code, while M3D-C1 is an implicit finite element code. Although the implementations of CLT and M3D-C1 are totally different, we find that the simulation results of the resistive-kink mode and the m/n=2/1 tearing mode from M3D-C1 and CLT are almost the same, including the linear and nonlinear growth rates, the mode structures, the nonlinear saturation levels, the Poincare plots, and the scaling laws. This confirms that the nonlinear results for the 1/1 resistive-kink mode and 2/1 tearing mode are accurate and reliable.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Carbohydrate-Containing Conjugated Polymers: Solvent-Resistant Materials for Greener Organic Electronics

Organic semiconducting polymers are exciting materials for electronic applications because of their good mechanical and optoelectronic properties. A major advantage of organic semiconductors is their solution processability. This allows access to a variety of simple and cost-effective device fabrication methods compared to the expensive, high-temperature processing methods required for silicon-based electronics. However, these materials often have low solubility, which limits their processing to toxic halogenated solvents. Also, their limited solubility often leads to interfacial mixing during device fabrication. Herein, this work explores the incorporation of environmentally friendly carbohydrate side chains in conjugated polymers to enhance processability in eco-friendly solvents. Moreover, a mild postprocessing treatment was designed to enable solvent resistance. Isoindigo-based polymers with varied ratios of acetyl-protected galactose side chains were synthesized to improve solubility in o-anisole in the protected state, while inducing solvent resistance through intramolecular hydrogen bonding in the deprotected state. Solvent resistance was confirmed both visually upon submersion in various solvents and using UV–visible spectroscopy. Importantly, the mild basic treatment to achieve solvent resistance has no negative impact on the electronic performance of these materials in organic field-effect transistors, even after subsequent submersion in various solvents, making them a valuable platform for the production of green processable multilayer electronics.

36 MATERIALS SCIENCE↗

Two-current model of the composition dependence of resistivity in amorphous (Fe100-xCox)(89-y)Zr7B4Cuy alloys using a rigid-band assumption

Composition dependence of resistivity is studied in amorphous (Fe100-xCox)(89-y)Zr7B4Cuy (0 <= x <= 50, y = 0, 1) alloys. The two-current model proposed by Mott for crystalline materials is extended to a disordered amorphous system where s-d scattering is dominant in electron conduction. A rigid-band assumption is made due to the small atomic number difference between Fe and Co. Band structures with a constant density of states (DOS), parabolic distributed DOS, and Gaussian distributed DOS were investigated to fit experimental data. The Gaussian distributed DOS was found to simulate the resistivity maximum and magnetic moment maximum in the Fe-rich region. The basic concepts presented here can potentially provide insight into the optimization of FeCo-based HITPERM alloys for applications at increased frequencies. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4765673]

Shen, S↗

The structures of penicillin-binding protein 4 (PBP4) and PBP5 from Enterococci provide structural insights into β-lactam resistance

The final steps of cell-wall biosynthesis in bacteria are carried out by penicillin-binding proteins (PBPs), whose transpeptidase domains form the cross-links in peptidoglycan chains that define the bacterial cell wall. These enzymes are the targets of β-lactam antibiotics, as their inhibition reduces the structural integrity of the cell wall. Bacterial resistance to antibiotics is a rapidly growing concern; however, the structural underpinnings of PBP-derived antibiotic resistance are poorly understood. PBP4 and PBP5 are low-affinity, class B transpeptidases that confer antibiotic resistance to Enterococcus faecalis and Enterococcus faecium, respectively. We report the crystal structures of PBP4 (1.8 Å) and PBP5 (2.7 Å) in their apo and acyl-enzyme complexes with the β-lactams benzylpenicillin, imipenem, and ceftaroline. We found that, although these three β-lactams adopt geometries similar to those observed in other class B PBP structures, there are small, but significant, differences that likely decrease antibiotic efficacy. Further, we also discovered that the N-terminal domain extensions in this class of PBPs undergo large rigid-body rotations without impacting the structure of the catalytic transpeptidase domain. Together, our findings are defining the subtle functional and structural differences in the Enterococcus PBPs that allow them to support transpeptidase activity while also conferring bacterial resistance to antibiotics that function as substrate mimics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Genetic Predictive Factors for Nonsusceptible Phenotypes and Multidrug Resistance in Expanded-Spectrum Cephalosporin-Resistant Uropathogenic Escherichia coli from a Multicenter Cohort: Insights into the Phenotypic and Genetic Basis of Coresistance

Antimicrobial resistance in urinary tract infections (UTIs) is a major public health concern. This study aims to characterize the phenotypic and genetic basis of multidrug resistance (MDR) among expanded-spectrum cephalosporin-resistant (ESCR) uropathogenic Escherichia coli (UPEC) causing UTIs in California patient populations. Between February and October 2019, 577 ESCR UPEC isolates were collected from patients at 6 clinical laboratory sites across California. Lineage and antibiotic resistance genes were determined by analysis of whole-genome sequence data. The lineages ST131, ST1193, ST648, and ST69 were predominant, representing 46%, 5.5%, 4.5%, and 4.5% of the collection, respectively. Overall, 527 (91%) isolates had an expanded-spectrum β-lactamase (ESBL) phenotype, with bla CTX-M-15 , bla CTX-M-27 , bla CTX-M-55 , and bla CTX-M-14 being the most prevalent ESBL genes. In the 50 non-ESBL phenotype isolates, 40 (62%) contained bla CMY-2 , which was the predominant plasmid-mediated AmpC (pAmpC) gene. Narrow-spectrum β-lactamases, bla TEM-1B and bla OXA-1 , were also found in 44.9% and 32.1% of isolates, respectively. Among ESCR UPEC isolates, isolates with an ESBL phenotype had a 1.7-times-greater likelihood of being MDR than non-ESBL phenotype isolates (P < 0.001). The cooccurrence of bla CTX-M-15 , bla OXA-1 , and aac(6')-Ib-cr within ESCR UPEC isolates was strongly correlated. Cooccurrence of bla CTX-M-15 , bla OXA-1 , and aac(6')-Ib-cr was associated with an increased risk of nonsusceptibility to piperacillin-tazobactam, cefepime, fluoroquinolones, and amikacin as well as MDR. Multivariate regression revealed the presence of bla CTX-M-55 , bla TEM-1B , and the ST131 genotype as predictors of MDR.

59 BASIC BIOLOGICAL SCIENCES↗

Grain boundary segregation and intermetallic precipitation in coarsening resistant nanocrystalline aluminum alloys

In-spite of all of the unique properties of nanocrystalline materials, they are notorious when it comes to their susceptibility to thermally induced grain coarsening, thus imposing an upper limit to their application temperature. In this study, we demonstrate a coupled Monte Carlo-molecular dynamics simulation-guided experimental approach of improving the resistance to thermally induced grain coarsening in light-weight nanocrystalline Al-Mg alloys. The structure, grain boundary segregation of Mg, and extent of grain coarsening of the Al-Mg alloys were characterized using plan view and cross-sectional transmission electron microscopy and atom probe tomography. Coarsening resistance is attributed to a combination of thermodynamic stabilization of grain boundaries by controlled Mg segregation, and kinetic stabilization through pinning of the boundaries with nanoscale intermetallic precipitates. Thus, we highlight the opportunities in extending the upper limit of application temperature for nanocrystalline alloys by using a complementary thermodynamic and kinetic stabilization approach.

Nanostructured materials, Al Alloys, Thermal stabi↗

Microstructure, hardness and cavitation erosion resistance of different cold spray coatings on stainless steel 316 for hydropower applications

There is an urgent need for repair of hydropower components that have undergone damage due to cavitation. Conventional repair methods involve melting of materials and can deteriorate material properties and cause distortion. This study investigated the relevant properties of different materials using solid phase processing—cold spray technology. Stainless steel (SS) 316, Inconel 625 and CrC-NiCr materials were cold spray deposited onto base metal SS 316, respectively. Cold spray achieved dense uniform deposits with low level porosity, and intimate contact between the deposit and the base metal was observed. Severe plastic deformation imparted during the cold spray process resulted in significant grain size refinement, nanostructured regions were observed in the deposits across the interfacial area. Cold sprayed deposits exhibited elevated hardness in contrast to that of the base metal SS 316. The cavitation erosion resistance of the deposits was evaluated with a cavitation erosion jet adhering to ASTM G134. Both SS 316 and Inconel 625 achieved better cavitation erosion resistance when compared to that of the SS 316 base metal, with the former exhibiting close to a 4 times improvement.

Jiang, Xiujuan↗

Radiation resistance of oxide dispersion strengthened alloys: Perspectives from in situ observations and rate theory calculations

Here, in situ ion irradiation and rate theory calculations were employed to directly compare the radiation resistance of an oxide dispersion strengthened alloy with that of a conventional ferritic/martensitic alloy. Compared to the rapid buildup of dislocation loops, loop growth, and formation of network dislocations in the conventional ferritic/martensitic alloy, the superior radiation resistance of the oxide dispersion strengthened alloy is manifested by its stable dislocation structure under the same irradiation conditions. Thus, the results are consistent with rate theory calculations, which show that high-density nanoparticles can significantly reduce freely migrating defects and suppress the buildup of clustered defects.

36 MATERIALS SCIENCE↗

Dependence of the residual surface resistance of superconducting radio frequency cavities on the cooling dynamics around T{sub c}

We report a strong effect of the cooling dynamics through T{sub c} on the amount of trapped external magnetic flux in superconducting niobium cavities. The effect is similar for fine grain and single crystal niobium and all surface treatments including electropolishing with and without 120 °C baking and nitrogen doping. Direct magnetic field measurements on the cavity walls show that the effect stems from changes in the flux trapping efficiency: slow cooling leads to almost complete flux trapping and higher residual resistance, while fast cooling leads to the much more efficient flux expulsion and lower residual resistance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effect of interstitial impurities on the field dependent microwave surface resistance of niobium

Previous work has demonstrated that the radio frequency surface resistance of niobium resonators is dramatically reduced when nitrogen impurities are dissolved as interstitial in the material. This effect is attributed to the lowering of the Mattis-Bardeen surface resistance with increasing accelerating field; however, the microscopic origin of this phenomenon is poorly understood. Meanwhile, an enhancement of the sensitivity to trapped magnetic field is typically observed for such cavities. In this paper, we conduct a systematic study on these different components contributing to the total surface resistance as a function of different levels of dissolved nitrogen, in comparison with standard surface treatments for niobium resonators. Adding these results together, we are able to show which is the optimum surface treatment that maximizes the Q-factor of superconducting niobium resonators as a function of expected trapped magnetic field in the cavity walls. These results also provide insights on the physics behind the change in the field dependence of the Mattis-Bardeen surface resistance, and of the trapped magnetic vortex induced losses in superconducting niobium resonators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Destabilization of resistive plasma resistive wall mode by anisotropic thermal transport

Here, both an analytic model and the toroidal MARS-F code have been employed to study the effect of the anisotropic thermal transport on the stability of the resistive wall mode (RWM) in resistive tokamak plasmas. The results show that thermal transport destabilizes the resistive plasma RWM, by effectively eliminating the Glasser-Greene-Johnson favorable average curvature stabilization associated with the resistive layer. Modification of the mode eigenfunction is also observed in MARS-F computations, due to the presence of the anisotropic thermal transport.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Analytic investigation of combined effects of anisotropic thermal transport and energetic particles on stability of resistive plasma resistive wall mode

The combined effects of anisotropic thermal transport and trapped energetic particles (EPs) on the stability of the resistive plasma resistive wall mode (RPRWM) are investigated by an energy-principle based analytical model. The results qualitatively confirm that of a recent toroidal modeling study [Bai et al., Phys. Plasmas 27, 072502 (2020)], in which the thermal transport can stabilize the RPPWM depending on the parameters of both the plasma equilibrium and energetic particles. The analytical model predicts a complete stabilization of the RPRWM in highly resistive plasmas, at sufficiently high EPs’ pressure, and finite plasma flow. The stabilizing effect of thermal transport originates from its enhancement of energy dissipations associated with both the resistive layer and the trapped energetic particles.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge[subscript 2]Sb[subscript 2]Te[subscript 5] phase-change memory alloy

Ge-Sb-Te-based phase-change memory is one of the most promising candidates to succeed the current flash memories. The application of phase-change materials for data storage and memory devices takes advantage of the fast phase transition (on the order of nanoseconds) and the large property contrasts (e.g., several orders of magnitude difference in electrical resistivity) between the amorphous and the crystalline states. Despite the importance of Ge-Sb-Te alloys and the intense research they have received, the possible phases in the temperature-pressure diagram, as well as the corresponding structure-property correlations, remain to be systematically explored. In this study, by subjecting the amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} (a-GST) to hydrostatic-like pressure (P), the thermodynamic variable alternative to temperature, we are able to tune its electrical resistivity by several orders of magnitude, similar to the resistivity contrast corresponding to the usually investigated amorphous-to-crystalline (a-GST to rock-salt GST) transition used in current phase-change memories. In particular, the electrical resistivity drops precipitously in the P = 0 to 8 GPa regime. A prominent structural signature representing the underlying evolution in atomic arrangements and bonding in this pressure regime, as revealed by the ab initio molecular dynamics simulations, is the reduction of low-electron-density regions, which contributes to the narrowing of band gap and delocalization of trapped electrons. At P > 8 GPa, we have observed major changes of the average local structures (bond angle and coordination numbers), gradually transforming the a-GST into a high-density, metallic-like state. This high-pressure glass is characterized by local motifs that bear similarities to the body-centered-cubic GST (bcc-GST) it eventually crystallizes into at 28 GPa, and hence represents a bcc-type polyamorph of a-GST.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Pressure Dependence of Coherence-Incoherence Crossover Behavior in KFe 2 As 2 Observed by Resistivity and 75 As-NMR/NQR.

We present the results of 75 As nuclear magnetic resonance (NMR), nuclear quadrupole resonance (NQR), and resistivity measurements in KFe 2 As 2 under pressure (p). The temperature dependence of the NMR shift, nuclear spin-lattice relaxation time (T1), and resistivity show a crossover between a high-temperature incoherent, local-moment behavior and a low-temperature coherent behavior at a crossover temperature (T *). T * is found to increase monotonically with pressure, consistent with increasing hybridization between localized 3d orbitalderived bands with the itinerant electron bands. No anomaly in T * is seen at the critical pressure pc = 1.8 GPa where a change of slope of the superconducting (SC) transition temperature Tc(p) has been observed. In contrast, Tc(p) seems to correlate with antiferromagnetic spin fluctuations in the normal state as measured by the NQR 1/T1 data, although such a correlation cannot be seen in the replacement effects of A in the KFe 2 As 2 (A = K, Rb, Cs) family. In the superconducting state, two T1 components are observed at low temperatures, suggesting the existence of two distinct local electronic environments. The temperature dependence of the short T1s indicates a nearly gapless state below Tc. On the other hand, the temperature dependence of the long component 1/T1L implies a large reduction in the density of states at the Fermi level due to the SC gap formation. These results suggest a real-space modulation of the local SC gap structure in KFe 2 As 2 under pressure.

Wiecki, P.↗

Determination of Series Resistance in CdSeTe/CdTe Solar Cells by the Jsc–Voc Method

While commonly used in Si solar cell characterization, the Suns–Voc method of determining series resistance (Rs) is rarely used for CdTe and its alloys. However, it is advantageous relative to the slope method—commonly used in the CdTe community—because it measures series resistance at the maximum power point, at which a solar cell operates. Using the self-consistent predecessor to Suns–Voc, Jsc –Voc, , we determine Rs of two different CdSeTe/CdTe solar cell structures to be 0.96 and 2.72 Ωcm2, with repeated measurements showing little deviation

13 HYDRO ENERGY↗