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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Low Thermal Resistance (0.5 K/W) Ga 2 O 3 Schottky Rectifiers With Double-Side Packaging

The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga 2 O 3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga 2 O 3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga 2 O 3 Schottky barrier diode (SBD) and measuring its junction-to-case thermal resistance (R θJC ) in the bottom-side- and junction-side-cooling configurations. The R θJC characterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The R θJC of the junction- and bottom-cooled Ga 2 O 3 SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former R θJC lower than that of similarly-rated commercial SiC SBDs. This low R θJC is attributable to the heat extraction directly from the Schottky junction instead of through the Ga 2 O 3 chip. Here, the R θJC lower than that of commercial SiC devices proves the viability of Ga 2 O 3 devices for high-power applications and manifest the significance of proper packaging for their thermal management.

42 ENGINEERING↗
DOE OSTI2023

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

42 ENGINEERING↗
NASA NTRS1970

Precision full-wave rectifier

Simplified circuit uses one operational amplifier and two precision resistors. The amplifier is operated open loop for switching and closed loop for linear gain, both simultaneously.

Deboo, G. J.↗
NASA NTRS1971

Design and analysis of an automatic method of measuring silicon-controlled-rectifier holding current

The design of an automated SCR holding-current measurement system is described. The circuits used in the measurement system were designed to meet the major requirements of automatic data acquisition, reliability, and repeatability. Performance data are presented and compared with calibration data. The data verified the accuracy of the measurement system. Data taken over a 48-hr period showed that the measurement system operated satisfactorily and met all the design requirements.

Maslowski, E. A.↗
NASA NTRS1971

Silicon-controlled-rectifier square-wave inverter with protection against commutation failure

The square-wave SCR inverter that was designed, built, and tested includes a circuit to turn off the inverter in case of commutation failure. The basic power stage is a complementary impulse-commutated parallel inverter consisting of only six components. The 400-watt breadboard was tested while operating at + or - 28 volts, and it had a peak efficiency of 95.5 percent at 60 hertz and 91.7 percent at 400 hertz. The voltage regulation for a fixed input was 3 percent at 60 hertz. An analysis of the operation and design information is included.

Birchenough, A. G.↗
NASA NTRS1974

A system to geometrically rectify and map airborne scanner imagery and to estimate ground area

A system of computer programs were developed which performs geometric rectification and line-by-line mapping of airborne multispectral scanner data to ground coordinates and estimates ground area. The system requires aircraft attitude and positional information furnished by ancillary aircraft equipment, as well as ground control points. The geometric correction and mapping procedure locates the scan lines, or the pixels on each line, in terms of map grid coordinates. The area estimation procedure gives ground area for each pixel or for a predesignated parcel specified in map grid coordinates. The results of exercising the system with simulated data showed the uncorrected video and corrected imagery and produced area estimates accurate to better than 99.7%.

Spencer, M. M.↗
NASA NTRS1974

SICLOPS - A system of computer programs for rectified mapping of airborne scanner imagery

This paper describes SICLOPS, a system of computer programs, which has been developed to perform geometrically corrected line-by-line mapping of airborne multispectral scanner data to ground coordinates and to estimate ground areas. As inputs, SICLOPS accepts aircraft attitude and positional information furnished by ancillary aircraft equipment, plus ground truth information giving the location, in map grid coordinates, of a number of recognizable landmarks on the ground. The geometric correction and mapping procedure locates the scan lines, or the pixels on each line, in terms of map grid coordinates. The area estimation procedure gives ground area for each pixel or for a predesignated parcel specified in map grid coordinates. The results of exercising the system with simulated data showed the uncorrected video and corrected imagery and produced area estimates accurate to better than 99.7%. Real input data, though prepared, have not yet been processed by the system.

Spencer, M. M.↗
NASA NTRS1980

The half-wave rectifier response of the magnetosphere and antiparallel merging

In some ways the magnetosphere behaves as if merging occurs only when the interplanetary magnetic field (IMF) is southward, and in other ways it behaves as if merging occurs for all IMF orientations. An explanation of this duality is offered in terms of a geometrical antiparallel merging model which predicts merging for all IMF orientations but magnetic flux transfer to the tail only for southward IMF. This is in contrast to previous models of component merging, where merging and flux transfer occur together for nearly all IMF orientations. That the problematic duality can be explained by the model is compelling evidence that antiparallel merging should be seriously considered in constructing theories of the merging process.

Crooker, N. U.↗