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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Zircon-to-reidite phase transition enhanced by minor radiation damage: Implications for hypervelocity impacts

Reidite, a high-pressure phase of zircon, is increasingly identified at terrestrial impact sites. Despite its growing recognition, the potential applications for estimating minimum impact pressure face impediments due to existing discrepancies in the condition of zircon-reidite transformation, controversial models governing the transformation mechanism, and unclear effects of pre-existing radiation damage on reidite formation. Here, we show enhanced reidite formation by synchrotron X-ray diffraction, Raman spectroscopy, and transmission electron microscopy analyses of zircon grains that have experienced different alpha-decay doses from U and Th impurities and subsequent pressurization in diamond anvil cells. Below ~1 × 10 18 α-decay events/g, the α-decay-induced isolated point defects in the still crystalline zircon facilitate the minor atomic readjustments required for reidite formation. However, above this dose, the loss of long-range periodicity in severely damaged or even metamict zircon inhibits the transformation. The enhanced reidite formation by minor radiation damage coincides with the more common occurrence of reidite at impact sites for which the precursor zircon has a relatively lower alphadecay- event dose before the impact event. In addition, the detailed atomic-scale structures of twinned reidite provide unambiguous evidence for a characteristic internal stress-induced martensitic transition. Furthermore, these findings have important implications for interpreting the formation conditions of natural reidite due to the convergence of pressure from the static, shockwave, and natural reidite samples.

58 GEOSCIENCES↗
NASA NTRS1979

Improvement and extension of data from ATS-6 Solar Cell Radiation Damage Experiment (SCRDE)

The ATS 6 solar cell radiation damage experiment data through 2 1/3 years of synchronous orbit operation are presented. Comparisons are made of the performances of the 13 different types of solar cell/cover configurations, including solar cell and cover thickness variations, base resistivity variation, new cover processes and materials, and the COMSAT violet cell. These performances are also compared to the performance of the LES 6 solar cell experiment, the ATS 6 main solar arrays, and laboratory spectrum electron irradiations. It is found that the cells of the ATS 6 experiment generally performed as expected through 6 to 9 months in orbit, but that at 2 1/3 years they were severely degraded in current. The short circuit current degradation after 2 1/3 years in orbit appears to exhibit an anomalous additional degradation of 5 to 9 percent over what was experienced in synchronous orbit operation.

Goldhammer, L. J.↗
DOE OSTI2024

Enhanced Radiation Damage Tolerance of Amorphous Interphase and Grain Boundary Complexions in Cu-Ta

Amorphous interfacial complexions are particularly resistant to radiation damage and have been primarily studied in alloys with good glass-forming ability, yet recent reports suggest that these features can form even in immiscible alloys such as Cu-Ta under irradiation. In this work, the mechanisms of damage production and annihilation due to primary knock-on atom collisions are investigated for amorphous interphase and grain boundaries in a Cu-Ta alloy using atomistic simulations. Amorphous complexions, in particular amorphous interphase complexions that separate Cu and Ta grains, result in less residual defect damage than their ordered counterparts. Stemming from the nanophase chemical separation in this alloy, the amorphous complexions exhibit a highly heterogeneous distribution of atomic excess volume, as compared to a good glass former like Cu-Zr. Complexion thickness, a tunable structural descriptor, plays a vital role in damage resistance. Thicker interfacial films are more damage-tolerant because they alter the defect production rate due to differences in intrinsic displacement threshold energies during the collision cascade. Overall, the findings of this work highlight the importance of interfacial engineering in enhancing the properties of materials operating in radiation-prone environments and the promise of amorphous complexions as particularly radiation damage-tolerant microstructural features.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Novel technology of non-contact real-time radiation damage sensors for high power targets.

This report summarizes the contributions of an intern participating in the Community College Internship (CCI) program at Fermilab, focusing on the development of a novel, non-contact, real-time radiation damage sensor technology. The core objective is to create a reliable sensor capable of measuring radiation-induced degradation on high-power targets without physical contact. The experiment involves using a Class 3B supercontinuum laser directed toward a single material sample placed within a vacuum test chamber. The laser beam reflects off the sample's surface, with changes in reflectivity, indicative of radiation damage, measured by a spectrometer positioned at the chamber’s output port. The intern’s primary responsibilities included designing an interlock system to ensure laser operational safety, developing a camera-based monitoring system using Raspberry Pi devices, and creating structural supports using 3D modeling and printing techniques. Components for the interlock and camera systems were successfully designed and ordered, with preliminary 3D models printed and refined through iterative testing. Challenges encountered in the 3D printing process, such as fragile initial prototypes and difficult support removal, were overcome by adjusting printer settings and incorporating design enhancements like chamfered edges. Future activities, pending component delivery, involve installing and configuring the interlock and camera systems, as well as further improving the structural supports. Overall, the internship significantly enhanced the intern’s technical proficiency in hardware design, software integration, and advanced 3D printing, contributing directly to Fermilab’s operational safety standards and experimental effectiveness in high-energy physics research.

Pumarino Meza, Rafael [Unlisted; Fermilab]↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55. The purpose of the experiment is to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of C-MOS and P-MOS devices shielded in front by flat slabs of aluminum and by a practically infinite shield in the back. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on-the-ground simulation experiment with Co-60, indicates that the measured space damage is smaller than predicted by about a factor of 2-3 for thin shields, but agrees well with predictions for thicker shields.

Cliff, R. A.↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55, to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of CMOS and P-MOS devices shielded in front over 2 pi steradian by flat slabs of aluminum of 40, 80, 150, and 300 mils (1.02, 2.04, 3.81, and 7.62 mm) thicknesses, and by a practically infinite shield in the back. Initial results from the CREM experiment are reported. Predictions of radiation damage to CMOS devices are based on standard environment models and computational techniques. Measured space damage is smaller than predicted by about a factor of 2-3 for thin shields but agrees well with predictions for thicker shields. It is not clear at this time how the trapped particle environment models or the computational methods should be modified in order to achieve better agreement between experimental results and predicted damage curves.

Cliff, R. A.↗
NASA NTRS1979

Radiation damage in high-voltage silicon solar cells

Three types of open circuit high voltage solar cells were tested to determine their performance after exposure to 1 MeV electron irradiations. The cells with a relatively deep n-type emitter were more susceptible to radiation damage than other high open circuit high voltage cells. The use of diffused or ion implanted junctions leads to open circuit high voltage cell designs that are less susceptible to radiation damage. These latter two types of cells show degradations that are typical of the 0.1 ohm-cm material from which they are fabricated. Furthermore, exposure to ionizing radiation causes oxide degradation and decreased cell performance in cells that depend on a charged oxide to achieve significant cell properties. Hence, the combination of a charged oxide and a relatively deep n-type emitter is not recommended for incorporation into a cell designed for use in the particulate radiation environment of space.

Weinberg, I.↗