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NASA NTRS2017

The Quantum Approximation Optimization Algorithm for MaxCut: A Fermionic View

Farhi et al. recently proposed a class of quantum algorithms, the Quantum Approximate Optimization Algorithm (QAOA), for approximately solving combinatorial optimization problems. A level-p QAOA circuit consists of steps in which a classical Hamiltonian, derived from the cost function, is applied followed by a mixing Hamiltonian. The 2p times for which these two Hamiltonians are applied are the parameters of the algorithm. As p increases, however, the parameter search space grows quickly. The success of the QAOA approach will depend, in part, on finding effective parameter-setting strategies. Here, we analytically and numerically study parameter setting for QAOA applied to MAXCUT. For level-1 QAOA, we derive an analytical expression for a general graph. In principle, expressions for higher p could be derived, but the number of terms quickly becomes prohibitive. For a special case of MAXCUT, the Ring of Disagrees, or the 1D antiferromagnetic ring, we provide an analysis for arbitrarily high level. Using a Fermionic representation, the evolution of the system under QAOA translates into quantum optimal control of an ensemble of independent spins. This treatment enables us to obtain analytical expressions for the performance of QAOA for any p. It also greatly simplifies numerical search for the optimal values of the parameters. By exploring symmetries, we identify a lower-dimensional sub-manifold of interest; the search effort can be accordingly reduced. This analysis also explains an observed symmetry in the optimal parameter values. Further, we numerically investigate the parameter landscape and show that it is a simple one in the sense of having no local optima.

quantum algorithm↗

NASA NTRS2009

Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

imagers↗

NASA NTRSDate not supplied

Preparing Quantum Many-Body Scar States on Quantum Computers

Quantum many-body scar states are highly excited eigenstates of many-body systems that exhibit atypical entanglement and correlation properties relative to other eigenstates at the same energy density. Scar states also give rise to infinitely long-lived coherent dynamics when the system is prepared in a special initial state having finite overlap with them. Many models with exact scar states have been constructed, but the fate of scarred eigenstates and dynamics when these models are perturbed is difficult to study with classical computational techniques. In this work, we propose state preparation protocols for individual scar states in a particular model, as well as superpositions of them that give rise to coherent dynamics. For superpositions of scar states, we propose both a linear depth unitary and a finite-depth nonunitary state preparation protocol, the latter of which uses measurement and postselection to reduce the circuit depth. For individual scarred eigenstates, we propose a circuit architecture with polynomial depth. We also provide proof of principle implementations of these protocols on superconducting quantum hardware.

Quantum Computing↗

NASA NTRS1991

22 W coherent GaAlAs amplifier array with 400 emitters

Greater than 22 W of optical power has been demonstrated from a multiple-emitter, traveling-wave semiconductor amplifier, with approximately 87 percent of the output at the frequency of the injection source. The device integrates, in AlGaAs graded-index separate-confinement heterostructure single quantum well (GRINSCH-SQW) epitaxy, 400 ridge waveguide amplifiers with a coherent optical signal distribution circuit on a 12 x 6 mm chip.

Krebs, D.↗

NASA NTRS2009

SOI CMOS Imager with Suppression of Cross-Talk

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Pain, Bedabrata↗

NASA NTRS1979

Internal photoemission in Ag-Al2O3-Al junctions

The magnitude of the photon-induced current in Ag-Al2O3-Al metal-oxide-metal junctions has been studied as a function of photon energy and angle of incident radiation. Photocurrents were theoretically analyzed on the basis of a modified vacuum photoemission model (Jain, 1975; Slayman et al., to be published). Optical constants previously reported in the literature (Irani et al., 1971; Ehnrereich et al., 1963) were used to calculate the true spatial generation rate in Ag and Al as a function of the angle, polarization of incident radiation, and film thickness. Results were found to be in very good agreement with experimentally determined values for a tunable dye laser with a KDP doubling crystal pumped by a Q-switched Nd:YAG laser with a LiIO3 doubling crystal. The system provided risetimes of 50 ns or less and peak powers of 10 W. Under short circuit conditions, the photoresponse to incident power was linear up to available power densities of 10 kW/sq cm. Quantum efficiencies of about 0.1% at zero-bias, near 3.8 eV under P polarization, were typically observed.

Guedes, J. M. P.↗

NASA NTRS1983

High-density Schottky barrier IRCCD sensors for remote sensing applications

It is pointed out that the ambitious goals envisaged for the next generation of space-borne sensors challenge the state-of-the-art in solid-state imaging technology. Studies are being conducted with the aim to provide focal plane array technology suitable for use in future Multispectral Linear Array (MLA) earth resource instruments. An important new technology for IR-image sensors involves the use of monolithic Schottky barrier infrared charge-coupled device arrays. This technology is suitable for earth sensing applications in which moderate quantum efficiency and intermediate operating temperatures are required. This IR sensor can be fabricated by using standard integrated circuit (IC) processing techniques, and it is possible to employ commercial IC grade silicon. For this reason, it is feasible to construct Schottky barrier area and line arrays with large numbers of elements and high-density designs. A Pd2Si Schottky barrier sensor for multispectral imaging in the 1 to 3.5 micron band is under development.

Elabd, H.↗

NASA NTRS1986

Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

Rohatgi, A.↗

NASA NTRS2014

HgCdTe e-APD Detector Arrays with Single Photon Sensitivity for Space Lidar Applications

A multi-element HgCdTe electron initiated avalanche photodiode (e-APD) array has been developed for space lidar applications. The detector array was fabricated with 4.3-μm cutoff HgCdTe which covered a spectral response from 0.4 to 4.3 μm. We have characterized a 4x4 detector array with 80 μm square elements and an integrated custom cryogenic silicon read-out integrated circuit (ROIC). The device operated at 77K inside a small closed-cycle Dewar. Measurements showed a unity gain quantum efficiency of about 90% at 1.55 μm. The bulk dark current of the HgCdTe e-APD at 77K was less than 50,000 input referred electrons/s at 12 V APD bias where the APD gain was 620 and the measured noise equivalent power (NEP) was 0.4 fW/Hz1/2. The electrical bandwidth of the ROIC was about 6 MHz, which was chosen to match the laser pulse width of our CO2 lidar. Even with the relatively low bandwidth, the high APD gain and low dark current enabled the device to detect single photon events. Because the APD was biased below the break-down voltage, the detector output was linear with the input optical signal and there was no dead-time and afterpulsing. A new series of HgCdTe e-APDs are being developed with a much wider bandwidth ROIC and higher gain HgCdTe e-APD array, which is expected to give a much better performance in linear mode photon counting applications.

HgCdTe↗

NASA NTRS2006

Dual Common Planes for Time Multiplexing of Dual-Color QWIPs

A proposed improved method of externally controlled time multiplexing of the readouts of focal-plane arrays of pairs of stacked quantum-well infrared photodetectors (QWIPs) that operate in different wavelength bands is based on a dual-detector-common-plane circuit configuration. The method would be implemented in a QWIP integrated-circuit chip hybridized with a readout integrated-circuit (ROIC) chip.

Rafol, Sir B.↗

NASA NTRS1988

Improvements in InP solar cells

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metal-organic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. The best cells, which were those made by ion implantation, show an open-circuit voltage of 873 mV, short-circuit current of 35.7 mA/sq cm, and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. A preliminary investigation of InP solar cells on foreign substrates has been carried out. Although problems have been encountered with doping of the InP by the substrate, cells of 7.1 percent efficiency on silicon and cells of 9.4 percent, efficiency on GaAs have been made.

Keavney, Christopher↗

NASA NTRS2021

NASA in Silicon Valley

Whether looking back only a few years or more than a century, our world has been changing. Communication networks are more widespread and interconnected than at any other time in human history. Computing power that was only imagined a generation ago is now widely available and can fit in the palm of a hand. The miniaturization of the integrated circuit has brought us close to the limit of what is possible with silicon as we explore new possibilities in the quantum realm. For over 80 years, NASA’s Ames Research Center in California’s Silicon Valley has held a special place amidst such change. With change, there also is continuity. Since 1939, Ames contributions have fundamentally shaped fields of study related to aeronautics and space. The ingenuity and problem-solving capabilities of personnel at Ames have affected all our lives in numerous ways, from everyday air travel to how we envision the possibility of life on other worlds. This publication is a mere hint at the rich history of Ames, told primarily through images that capture some of the recurring threads that have intertwined over that time. A bibliography points the reader to more detailed histories of Ames published over the years. They are excellent resources and, like all historical work, unavoidably incomplete. Our standing invitation in the present is to preserve what we can to help us understand where we are and how we arrived.

History↗

NASA NTRS2024

Dual-Resonator Kinetic-Inductance Detector for Distinction between Signal and 1/ƒ Frequency Noise

Astronomical kinetic inductance detectors (KIDs), similar to quantum information devices, experience performance-limiting noise from materials. In particular, 1/ƒ (frequency) noise arises from two-level system defects (TLSs) in the circuit dielectrics and material interfaces and can be a dominant noise mechanism. Here, we present a dual-resonator KID (DuRKID), which is designed for improved noise-equivalent power relative to standard 1/ƒ -noise-limited KIDs. In this study we present the DuRKID schematic, a fabricated example, our first measurement results, a theoretical model including 1/ƒ noise, and a system-noise model containing additional noise sources. The circuit consists of two superconducting resonators sharing an electrical capacitance bridge of four capacitors, each of which hosts TLSs. The device is intended to operate using hybridization of the modes, which causes TLSs to either couple to one mode or the other, depending upon which capacitor they reside in. In contrast, the signal will affect a resonator inductance and, due to mode hybridization, this causes correlated frequency changes in both modes. Therefore, one can better distinguish the photon signal from the TLS frequency noise. To achieve hybridization, a TiN inductor is current biased to allow tuning of one bare-resonator mode into degeneracy with the other. Measurements show that the resonator modes hybridize as expected. The inter-resonator coupling and unintentional coupling of the two resonators to transmission lines are also characterized in measurements. A quantum information-science model allows device-parameter extraction from experimental data and a 1/ƒ noise analysis with uncorrelated noise. A system-noise analysis of the DuRKID, with comparisons to standard KIDs, is performed with generation-recombination noise and amplifier noise. The study reveals that the DuRKID can exhibit a large performance advantage over TLS-limited KID detectors.

N Forouzani↗

NASA NTRS2003

Block QCA Fault-Tolerant Logic Gates

Suitably patterned arrays (blocks) of quantum-dot cellular automata (QCA) have been proposed as fault-tolerant universal logic gates. These block QCA gates could be used to realize the potential of QCA for further miniaturization, reduction of power consumption, increase in switching speed, and increased degree of integration of very-large-scale integrated (VLSI) electronic circuits. The limitations of conventional VLSI circuitry, the basic principle of operation of QCA, and the potential advantages of QCA-based VLSI circuitry were described in several NASA Tech Briefs articles, namely Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), Vol. 25, No. 10 (October 2001), page 42; Compact Interconnection Networks Based on Quantum Dots (NPO-20855) Vol. 27, No. 1 (January 2003), page 32; Bit-Serial Adder Based on Quantum Dots (NPO-20869), Vol. 27, No. 1 (January 2003), page 35; and Hybrid VLSI/QCA Architecture for Computing FFTs (NPO-20923), which follows this article. To recapitulate the principle of operation (greatly oversimplified because of the limitation on space available for this article): A quantum-dot cellular automata contains four quantum dots positioned at or between the corners of a square cell. The cell contains two extra mobile electrons that can tunnel (in the quantummechanical sense) between neighboring dots within the cell. The Coulomb repulsion between the two electrons tends to make them occupy antipodal dots in the cell. For an isolated cell, there are two energetically equivalent arrangements (denoted polarization states) of the extra electrons. The cell polarization is used to encode binary information. Because the polarization of a nonisolated cell depends on Coulomb-repulsion interactions with neighboring cells, universal logic gates and binary wires could be constructed, in principle, by arraying QCA of suitable design in suitable patterns. Heretofore, researchers have recognized two major obstacles to realization of QCA-based logic gates: One is the need for (and the difficulty of attaining) operation of QCA circuitry at room temperature or, for that matter, at any temperature above a few Kelvins. It has been theorized that room-temperature operation could be made possible by constructing QCA as molecular-scale devices. However, in approaching the lower limit of miniaturization at the molecular level, it becomes increasingly imperative to overcome the second major obstacle, which is the need for (and the difficulty of attaining) high precision in the alignments of adjacent QCA in order to ensure the correct interactions among the quantum dots.

Firjany, Amir↗

NASA NTRS2017

Parallels in Communication and Navigation Technology and Natural Phenomenon

The premise is more than art imitates life, or technology imitates nature it is a nascent step to see how we might be unwittingly inspired and influenced. An example that might immediately come to mind is a starling murmuration (a phenomenon called scale-free correlation) and Intels recent Coachella music festival drone performance. Superconductivity is a macroscopic manifestation of a quantum phenomenon - choreographed electrons (i.e. an electron murmuration) that enable astonishing devices. There is indeed an intimate connectedness between biology and electromagnetism. Our brains are complex neural circuits generating magnetic fields with a magnitude around 100 femtoTesla (roughly one billion times weaker than a typical magnet used to tack notes to a refrigerator door). Migratory birds navigate by orienteering with respect to the Earth's magnetic field. Electromagnetic field therapy is used in orthopedics to aid in bone repair. The electric eel generates a large electric field for self-defense. Sharks apparently detect extremely weak electric fields for finding prey. And so on. There are similarities between the way a field of wheat responds to a breeze and the natural restoring forces of a semiconductor crystal. And waves in a slowly moving river can lap backwards against a peninsular shoreline mimicking a diffraction effect. Getting back to the introductory sentence and mysterious links over cosmic distances, in August 2016, China launched the Quantum Experiments at Space Scale (QUESS) satellite. The technology is based on a non-linear crystal that produces pairs of entangled photons whose attributes apparently remain entwined regardless of how far apart they are separated. This paper will, no doubt superficially, attempt to enumerate and examine these types of connections and parallelisms.

Romanofsky, Robert↗

NASA NTRS1994

Barrier potential design criteria in multiple-quantum-well-based solar-cell structures

The barrier potential design criteria in multiple-quantum-well (MQW)-based solar-cell structures is reported for the purpose of achieving maximum efficiency. The time-dependent short-circuit current density at the collector side of various MQW solar-cell structures under resonant condition was numerically calculated using the time-dependent Schroedinger equation. The energy efficiency of solar cells based on the InAs/Ga(y)In(1-y)As and GaAs/Al(x)Ga(1-x)As MQW structues were compared when carriers are excited at a particular solar-energy band. Using InAs/Ga(y)In(1-y)As MQW structures it is found that a maximum energy efficiency can be achieved if the structure is designed with barrier potential of about 450 meV. The efficiency is found to decline linearly as the barrier potential increases for GaAs/Al(x)Ga(1-x)As MQW-structure-based solar cells.

Mohaidat, Jihad M.↗

NASA NTRS1989

InP shallow-homojunction solar cells

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

Keavney, Christopher↗

NASA NTRS2018

Performance of the QWIP Focal Plane Array for NASA's Landsat 9 Mission

The flight focal plane array (FPA) for the Thermal Infrared Sensor 2 (TIRS-2) instrument, to be flown on Landsat 9, was built and characterized at NASA Goddard Space Flight Center (GSFC). The FPA was assembled using GaAs quantum well infrared photodetector (QWIP) arrays from the same lot as the TIRS instrument on Landsat 8. Each QWIP array is hybridized to an Indigo ISC9803 readout integrated circuit (ROIC) with 640 x 512, 25µm by 25µm pixels. Each QWIP hybrid was tested at the NASA/GSFC Detector Characterization Laboratory (DCL) as a single sensor chip assembly (SCA). The best SCAs in terms of performance were then built up into an FPA consisting of three SCAs, required to provide the necessary 15-degree field of view of the instrument. The FPA was tested to determine if project requirements were being met as a fully assembled unit. The performance of the QWIP SCAs and the fully assembled, NASA flight-qualified FPA will be reviewed.

Quantum well infrared photodiode↗