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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Gas chromatography: Possible application of advanced instrumentation developed for solar system exploration to space station cabin atmospheres

Gas chromatography (GC) technology was developed for flight experiments in solar system exploration. The GC is a powerful analytical technique with simple devices separating individual components from complex mixtures to make very sensitive quantitative and qualitative measurements. It monitors samples containing mixtures of fixed gases and volatile organic molecules. The GC was used on the Viking mission in support of life detection experiments and on the Pioneer Venus Large Probe to determine the composition of the venusian atmosphere. A flight GC is under development to study the progress and extent of STS astronaut denitrogenation prior to extravehicular activity. Advanced flight GC concepts and systems for future solar system exploration are also studied. Studies include miniature ionization detectors and associated control systems capable of detecting from ppb up to 100% concentration levels. Further miniaturization is investigated using photolithography and controlled chemical etching in silicon wafers. Novel concepts such as ion mobility drift spectroscopy and multiplex gas chromatography are also developed for future flight experiments. These powerful analytical concepts and associated hardware are ideal for the monitoring of cabin atmospheres containing potentially dangerous volatile compounds.

Carle, G. C.↗
NASA NTRS1986

Metalizing Solar Cells by Selective Electroplating

Contact patterns traced by laser scanning. Conductor paths deposited on silicon solar-cell wafers by laser irradiation followed by electroplating. Laser-assisted metalization technique offers better resolution and lower contact resistance than does conventional metalization by screen printing. At the same time, less expensive than metalization with masks and photolithography.

Dutta, S.↗
NASA NTRS1986

Slow crack growth measurement using an electrical grid

Photolithography was used to produce a resistance grid on the surface of a DCB fracture specimen. The grid line spacings were 10 microns over a distance of 2 cm. Slow crack growth was measured on soda-lime-silica glass. At low values of K(I) (0.3 to 0.4 MPa.sq r + m, increased. Equations are given for the design of grids. The grid technique could be used to measure very slow crack growth at high temperature with appropriate compatible metal-ceramic materials.

Martin, D. J.↗
NASA NTRS1987

Ink jet assisted metallization for low cost flat plate solar cells

Computer-controlled ink-jet-assisted metallization of the front surface of solar cells with metalorganic silver inks offers a maskless alternative method to conventional photolithography and screen printing. This method can provide low cost, fine resolution, reduced process complexity, avoidance of degradation of the p-n junction by firing at lower temperature, and uniform line film on rough surface of solar cells. The metallization process involves belt furnace firing and thermal spiking. With multilayer ink jet printing and firing, solar cells of about 5-6 percent efficiency without antireflection (AR) coating can be produced. With a titanium thin-film underlayer as an adhesion promoter, solar cells of average efficiency 8.08 percent without AR coating can be obtained. This efficiency value is approximately equal to that of thin-film solar cells of the same lot. Problems with regard to lower inorganic content of the inks and contact resistance are noted.

Teng, K. F.↗
NASA NTRS1989

Planar Antennas On Thick Dielectric Substrates

Features include ease of fabrication and wide range of operating frequencies. Planar antennas on thick dielectric substrates built for use at millimeter wavelengths from 40 to 400 GHZ. Antennas of this type quasi-optical structures, for which expensive, precisely machined waveguides not required. Made easily by standard photolithography and integrated with planar mixers or detectors to form arrays.

Lee, K. A.↗
NASA NTRS1988

Study of optical output couplers for submillimeter wavelength backward-wave oscillators (BWO's)

The machining of slow wave structures for high frequency backward-wave oscillators (BWO) is extremely difficult beyond 1 THz. Recently a microfabrication technique using photolithography and ion-beam assisted etching has been used to construct a prototype BWO operating at 200 to 265 GHz. The output coupler for such tubes remains a problem. Waveguides do not exist or are very lossy at the frequencies of interest (300 to 2000 GHz). This paper discusses several scaled experiments of optical output couplers for submillimeter BWOs. Various designs of planar antennas (Vivaldi horns) and lens-feed systems (Hyperhemispherical lens) were constructed and tested between 20 and 100 GHz using a spectrum analyzer. The lens system was also tested at 337 GHz using a CO2 pumped FIR laser.

Cook, Jerry D.↗
NASA NTRS1988

Calibration of single particle sizing velocimeters using photomask reticles

The development of photomask reticle calibration standards for single particle instruments is discussed. The calibration method studied involves the use of photomask reticles where the particle artifacts are actually disks of chrome thin film in the clear field reticles produced by photolithography and etching processes. Consideration is given to various aspects of theory, design, and performance.

Hirleman, E. D.↗
NASA NTRS1989

Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

Warner, J. D.↗
NASA NTRS1990

Sequentially evaporated thin film YBa2Cu3O(7-x) superconducting microwave ring resonator

There is great interest in the application of thin film high temperature superconductors in high frequency electronic circuits. A ring resonator provides a good test vehicle for assessing the microwave losses in the superconductor and for comparing films made by different techniques. Ring resonators made of YBa2Cu3O(7-x) have been investigated on LaAlO3 substrates. The superconducting thin films were deposited by sequential electron beam evaporation of Cu, Y, and BaF2 with a post anneal. Patterning of the superconducting film was done using negative photolithography. A ring resonator was also fabricated from a thin gold film as a control. Both resonators had a gold ground plane on the backside of the substrate. The ring resonators' reflection coefficients were measured as a function of frequency from 33 to 37 GHz at temperatures ranging from 20 K to 68 K. The resonator exhibited two resonances which were at 34.5 and 35.7 GHz at 68 K. The resonant frequencies increased with decreasing temperature. The magnitude of the reflection coefficients was in the calculation of the unloaded Q-values. The performance of the evaporated and gold resonator are compared with the performance of a laser ablated YBa2Cu3O(7-x) resonator. The causes of the double resonance are discussed.

Rohrer, Norman J.↗
NASA NTRS1991

Edge-Geometry NbN/MgO/NbN Tunnel Junctions

Superconductor/insulator/superconductor (SIS) tunnel junctions fabricated with base and counter electrodes of NbN separated by thin layers of MgO. Useful as submillimeter-wave mixers and fast switches. Use of edge geometry to define small junction makes possible to fabricate junction by process including conventional photolithography.

Hunt, Brian D.↗
NASA NTRS1990

High Tc superconducting materials and devices

The high Tc Y1Ba2Cu3O(7-x) ceramic materials, initially developed in 1987, are now being extensively investigated for a variety of engineering applications. The superconductor applications which are presently identified as of most interest to NASA-LaRC are low-noise, low thermal conductivity grounding links; large-area linear Meissner-effect bearings; and sensitive, low-noise sensors and leads. Devices designed for these applications require the development of a number of processing and fabrication technologies. Included among the technologies most specific to the present needs are tapecasting, melt texturing, magnetic field grain alignment, superconductor/polymer composite fabrication, thin film MOD (metal-organic decomposition) processing, screen printing of thick films, and photolithography of thin films. The overall objective of the program was to establish a high Tc superconductivity laboratory capability at NASA-LaRC and demonstrate this capability by fabricating superconducting 123 material via bulk and thin film processes. Specific objectives include: order equipment and set up laboratory; prepare 1 kg batches of 123 material via oxide raw material; construct tapecaster and tapecaster 123 material; fabricate 123 grounding link; fabricate 123 composite for Meissner linear bearing; develop 123 thin film processes (nitrates, acetates); establish Tc and Jc measurement capability; and set up a commercial use of space program in superconductivity at LaRC. In general, most of the objectives of the program were met. Finally, efforts to implement a commercial use of space program in superconductivity at LaRC were completed and at least two industrial companies have indicated their interest in participating.

Haertling, Gene H.↗
NASA NTRS1989

Gallium arsenide processing for gate array logic

The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

Cole, Eric D.↗
NASA NTRS1993

Thin Hot-Film Sensors On Polyimide Film

Array of closely spaced hot-film sensors with thickness well below critical reference height with regard to air-flow pattern nonintrusively detect laminar boundary-layer transitions with very high resolution. Method developed at NASA Langley Research Center to fabricate such sensors on polyimide films to detect boundary-layer transitions with resolution as high as 0.050 in. These films formed by combination of vacuum deposition and photolithography.

Hopson, Purnell↗
NASA NTRS1992

Texturing of InP surfaces for device applications

A unique process for texturing InP (100) wafers by anisotropic etching was developed. The process produces irregular V-grooves on the surface, which reduce the surface reflectivity. The process does not require photolithography or masking. The etching characteristics depend on doping, with etching tending to proceed more rapidly on the more heavily doped samples. Reduced reflectivity surfaces formed using this process can be applied to solar cells, photodetectors, and other optoelectronic devices.

Bailey, Sheila G.↗
NASA NTRS1993

New technologies for UV detectors

Several technologies are currently being developed, leading to substantial improvements in the performance of UV detectors or significant reductions in power or weight. Four technologies discussed are (1) thin-film coatings to enhance the UV sensitivity of CCD's, (2) highly innovative magnet assemblies that dramatically reduce weight and result in virtually no external flux, (3) new techniques for curving microchannel plates (MCP's) so that single plates can be used to prevent ion feedback and present highly localized charge clouds to an anode structure, and (4) high-performance alternatives to glass-based MCP's. In item (2), for example, very robust magnets are made out of rare earth materials such as samarium cobalt, and cladding magnets are employed to prevent flux from escaping from the detector into the external environment. These new ultralight magnet assemblies are able to create strong, exceptionally uniform magnetic fields for image intensification and focusing of photoelectrons. The principle advantage of such detectors is the quantum efficiencies of 70-80 percent obtained throughout ultraviolet wavelengths (900-2000 A), the highest of any device. Despite the improvements achieved under item (3), high-performance alternatives to conventional glass-based MCP's potentially offer three distinct new advantages that include (1) a 30-100-fold improvement in dynamic range resulting in correspondingly higher signal-to-noise ratios, (2) the use of pure dielectric and semiconductor materials that will not outgas contaminants that eventually destroy photocathodes, and (3) channels that have constant spacing providing long-ranged order since the plates are made using photolithography techniques from the semiconductor industry. The manufacturers of these advanced-technology MCP's, however, are a couple of years away from actually producing a functioning image intensifier. In contrast to the use of CCD's for optical, ground based observations, there is no single detector technology in the ultraviolet that dominates or is as universally suitable for all applications. Thus, several technological problems, recent advances, and the impact that these new enabling technologies represent for UV applications are addressed.

Joseph, C. L.↗
NASA NTRS1993

Electrochemical patterning of amorphous carbon on diamond

The ability to pattern ion-implantation damaged or other nondiamond carbon on a diamond substrate is useful for fabricating a variety of devices. We accomplished such patterning by an unmasked implantation into a diamond substrate followed by photolithography and a selective electrochemical etch. The use of a high resistivity medium coupled with applied biases over 50 V permitted etching without requiring contact between the substrate and an electrode. Many electrolytes gave etches that exhibit high selectivity for nondiamond carbon over both diamond and dielectrics such as photoresist. Optical, electrical, and Raman spectroscopic measurements elucidate the effects of the etch on the implanted diamond surface.

Marchywka, Mike↗
NASA NTRS1992

Microstrip proportional counter development at MSFC

Microstrip detectors are an exciting new development in proportional counter design fabricated using integrated circuit-type photolithography techniques; they therefore offer very high spatial accuracy and uniformity. A development program is underway at NASA-Marshall to produce large-area microstrips for use in an X-ray detector balloon flight program and to investigate the general performance limits of these new devices. Microstrips tested so far have been fabricated both in-house using standard photolithographic techniques and by an outside contractor using electron beam technology. Various substrate materials have been tested along with different electrode configurations. The distributions of pickup on subdivided cathodes on both top and bottom surfaces of the microstrips are also being investigated for use as two-dimensional imaging detectors. Data from these tests in the development of a large-area device will be presented.

Fulton, M. A.↗
NASA NTRS1990

Subcritical crack growth in soda-lime glass in combined mode I and mode II loading

Subcritical crack growth under mixed-mode loading was studied in soda-lime glass. Pure mode I, combined mode I and mode II, and pure mode II loadings were achieved in precracked disk specimens by loading in diametral compression at selected angles with respect to the symmetric radial crack. Crack growth was monitored by measuring the resistance changes in a microcircuit grid consisting of parallel, electrically conducting grid lines deposited on the surface of the disk specimens by photolithography. Subcritical crack growth rates in pure mode I, pure mode II, and combined mode I and mode II loading could be described by an exponential relationship between crack growth rate and an effective crack driving force derived from a mode I-mode II fracture toughness envelope. The effective crack driving force was based on an empirical representation of the noncoplanar strain energy release rate. Stress intensities for kinked cracks were assessed using the method of caustics and an initial decrease and a subsequent increase in the subcritical crack growth rates of kinked cracks were shown to correlate with the variations of the mode I and the mode II stress intensities.

Singh, Dileep↗