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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Ka-Band Beam Steering Reflectarray Study

A one-meter diameter, 32 GHz active microstrip reflectarray capable of electronic beam steering has been studied. The 15_500 element array consists of rnicrostrip patch antennas, microstrip phase shifters, and dc bias lines. Specifically, the study focused on the solid-state devices and dc bias layouts for scanning the beam linearly 45 from boresight using 2-bit phase shifters. Three configurations are recommended for the reflectarray with integrated 2-bit phase shifters where the total substrate and cladding mass varies from 8 kg to 14 kg. Additionally, dc power requirements for p-i-n diodes in 1-bit, 2-bit and 3-bit phase shifting circuits are approximately 19 W, 19 W, and 39 W, respectively. The dc power requirement for phase shifters using passive MESFETs is much less than 1 W.

McSpadden, James O.↗
NASA NTRS2003

Effects of a Scanning Reflectarray Antenna on Modulated Data Modeled

The ferroelectric reflectarray is a new type of scanning antenna under development for space and ground communications and radar applications at the NASA Glenn Research Center. The reflectarray offers tremendous cost, gain, and efficiency advantages in comparison to the state-of-the-art phased arrays, but there is an inherent intersymbol interference (ISI) problem with digital communication data streams processed through the array because of the way the reflectarray is operated. This interference stems from the fact that the antenna beam is formed by the superposition of reflected waves from the array elements. The delays from the elements to the observation point of each wave differ. Ferroelectric phase shifters are designed to compensate for the modulo-2p phase differences so that the waves will constructively interfere at the sinusoidal carrier level; however, the delays of the integer-number multiple of the carrier period are not compensated for. This lack of compensation causes ISI in digital modulated signals. ISI has not been a problem with analog modulations and low-rate digital modulations since the distortion (or ISI) introduced is negligible. The problem becomes acute when the data rate gets higher, and the electrical size of the array gets bigger. Moreover, there are intrinsic transient effects associated with the phase shifters and the controller that executes the algorithm to direct the beam. That is, phase shifter updates to redirect the beam may be initiated simultaneously, but nonlinearity will cause different settling times. The ISI problem and other effects ultimately limit the size (gain) and data rate of the reflectarray. An ISI analysis was required to prove or disprove the suitability of the reflectarray antenna for high-rate digitally modulated signals and to give guidance for determining antenna parameters. In this research, the nature of the ISI of the reflectarray has been mathematically modeled.

Romanofsky, Robert R.↗
NASA NTRS2002

A Statistical Analysis of Laser Ablated Ba(Sub 0.50)Sr(Sub 0.50)TiO(Sub 3)/LaAlO(Sub 3) Films for Microwave Applications

The NASA Glenn Research Center is constructing a 616 element scanning phased array antenna using thin film Ba(sub x)Sr(sub 1-x)TiO(sub 3) based phase shifters. A critical milestone is the production of 616 identical phase shifters at 19 GHz with [asymptotically equal to]4 dB insertion loss and at least 337.5 deg phase shift with 3 percent bandwidth. It is well known that there is a direct relationship between dielectric tuning and loss due to the Kramers-Kronig relationship and that film crystallinity and strain, affected by the substrate template, play an important role. Ba(sub 0.50)Sr(sub 0.50)TiO (sub 3) films, nominally 400 nm thick, were deposited on 48 0.25 mm thick, 5 cm diameter LaAlO(sub 3) wafers. Although previous results suggested that Mn-doped films on MgO were intrinsically superior in terms of phase shift per unit loss, for this application phase shift per unit length was more important. The composition was selected as a compromise between tuning and loss for room temperature operation (e.g. crystallinity progressively degrades for Ba concentrations in excess of 30 percent). As a prelude to fabricating the array, it was necessary to process, screen, and inventory a large number of samples. Variable angle ellipsometry was used to characterize refractive index and film thickness across each wafer. Microstructural properties of the thin films were characterized using high resolution X-ray diffractometry. Finally, prototype phase shifters and resonators were patterned on each wafer and RE probed to measure tuning as a function of dc bias voltage as well as peak (0 field) permittivity and unloaded Q. The relationship among film quality and uniformity and performance is analyzed. This work presents the first statistically relevant study of film quality and microwave performance and represents a milestone towards commercialization of thin ferroelectric films for microwave applications.

Ferroelectric thin films↗
NASA NTRS1989

Doppler radar with multiphase modulation of transmitted and reflected signal

A microwave radar signal is generated and split by a circulator. A phase shifter introduces a series of phase shifts into a first part of the split signal which is then transmitted by antenna. A like number of phase shifts is introduced by the phase shifter into the return signal from the target. The circulator delivers the phase shifted return signal and the leakage signal from the circulator to a mixer which generates an IF signal output at the Doppler frequency. The IF signal is amplified, filtered, counted per unit of time, and the result displayed to provide indications of target sense and range rate. An oscillator controls rate of phase shift in the transmitted and received radar signals and provides a time base for the counter. The phase shift magnitude increases may be continuous and linear or discrete functions of time.

Shores, Paul W.↗
NASA NTRS1989

Ka-band MMIC beam steered transmitter array

A 32-GHz six-element linear transmitter array utilizing monolithic microwave integrated circuit (MMIC) phase shifters and power amplifiers was designed and tested as part of the development of a spacecraft array feed for NASA deep-space communications applications. Measurements of the performance of individual phase shifters, power amplifiers, and microstrip radiators were carried out, and electronic beam steering of the linear array was demonstrated. The switched-line phase shifters were accurate to within 7 percent on average and the power amplifier 1-dB compressed output power varied over 0.3 dB. The array had a beamwidth of 7.5 deg and demonstrated acceptable beam steering over + or - 8 deg. From the results, it can be concluded that this MMIC phased array has adequate beam-scanning capability for use in the two-dimensional array. The areas that need to be improved are the efficiency of the MMIC power amplifier and the insertion loss of the MMIC phase shifter.

Rascoe, D. L.↗
NASA NTRS1989

A novel array antenna for MSAT applications

The issue of reducing the cost of phased array vehicle antennas through the use of a lens feeding arrangement instead of phase shifters at each element is addressed. In particular, the economic viability of a mobile satellite system (MSAT) is largely dependent on the efficient use of the allocated scarce spectrum and orbit as well as the satellite power. the type of vehicle antenna used will play a critical role in achieving this efficiency. A standard design approach for an electronically steered array uses phase shifters at each element to provide beam steering. A method for reducing the required number of phase shifters by using an R-KR lens feed network is outlined. The authors briefly discuss the phase shifter approach to beam steering, examine various lens feed techniques, and describe the R-KR lens approach. The lens feed network architecture is examined, a computer model for simulation of the array is presented, and the results of analysis of a suggested design for the MSAT application are given. In addition, satellite acquisition and tracking considerations are investigated.

Bodnar, Donald G.↗
NASA NTRS2009

Digital Beamforming Scatterometer

This paper discusses scatterometer measurements collected with multi-mode Digital Beamforming Synthetic Aperture Radar (DBSAR) during the SMAP-VEX 2008 campaign. The 2008 SMAP Validation Experiment was conducted to address a number of specific questions related to the soil moisture retrieval algorithms. SMAP-VEX 2008 consisted on a series of aircraft-based.flights conducted on the Eastern Shore of Maryland and Delaware in the fall of 2008. Several other instruments participated in the campaign including the Passive Active L-Band System (PALS), the Marshall Airborne Polarimetric Imaging Radiometer (MAPIR), and the Global Positioning System Reflectometer (GPSR). This campaign was the first SMAP Validation Experiment. DBSAR is a multimode radar system developed at NASA/Goddard Space Flight Center that combines state-of-the-art radar technologies, on-board processing, and advances in signal processing techniques in order to enable new remote sensing capabilities applicable to Earth science and planetary applications [l]. The instrument can be configured to operate in scatterometer, Synthetic Aperture Radar (SAR), or altimeter mode. The system builds upon the L-band Imaging Scatterometer (LIS) developed as part of the RadSTAR program. The radar is a phased array system designed to fly on the NASA P3 aircraft. The instrument consists of a programmable waveform generator, eight transmit/receive (T/R) channels, a microstrip antenna, and a reconfigurable data acquisition and processor system. Each transmit channel incorporates a digital attenuator, and digital phase shifter that enables amplitude and phase modulation on transmit. The attenuators, phase shifters, and calibration switches are digitally controlled by the radar control card (RCC) on a pulse by pulse basis. The antenna is a corporate fed microstrip patch-array centered at 1.26 GHz with a 20 MHz bandwidth. Although only one feed is used with the present configuration, a provision was made for separate corporate feeds for vertical and horizontal polarization. System upgrades to dual polarization are currently under way. The DBSAR processor is a reconfigurable data acquisition and processor system capable of real-time, high-speed data processing. DBSAR uses an FPGA-based architecture to implement digitally down-conversion, in-phase and quadrature (I/Q) demodulation, and subsequent radar specific algorithms. The core of the processor board consists of an analog-to-digital (AID) section, three Altera Stratix field programmable gate arrays (FPGAs), an ARM microcontroller, several memory devices, and an Ethernet interface. The processor also interfaces with a navigation board consisting of a GPS and a MEMS gyro. The processor has been configured to operate in scatterometer, Synthetic Aperture Radar (SAR), and altimeter modes. All the modes are based on digital beamforming which is a digital process that generates the far-field beam patterns at various scan angles from voltages sampled in the antenna array. This technique allows steering the received beam and controlling its beam-width and side-lobe. Several beamforming techniques can be implemented each characterized by unique strengths and weaknesses, and each applicable to different measurement scenarios. In Scatterometer mode, the radar is capable to.generate a wide beam or scan a narrow beam on transmit, and to steer the received beam on processing while controlling its beamwidth and side-lobe level. Table I lists some important radar characteristics

Rincon, Rafael F.↗
NASA NTRS1987

Distributed phased array architecture study

Variations in amplifiers and phase shifters can cause degraded antenna performance, depending also on the environmental conditions and antenna array architecture. The implementation of distributed phased array hardware was studied with the aid of the DISTAR computer program as a simulation tool. This simulation provides guidance in hardware simulation. Both hard and soft failures of the amplifiers in the T/R modules are modeled. Hard failures are catastrophic: no power is transmitted to the antenna elements. Noncatastrophic or soft failures are modeled as a modified Gaussian distribution. The resulting amplitude characteristics then determine the array excitation coefficients. The phase characteristics take on a uniform distribution. Pattern characteristics such as antenna gain, half power beamwidth, mainbeam phase errors, sidelobe levels, and beam pointing errors were studied as functions of amplifier and phase shifter variations. General specifications for amplifier and phase shifter tolerances in various architecture configurations for C band and S band were determined.

Bourgeois, Brian↗
NASA NTRS1992

V-band pseudomorphic HEMT MMIC phased array components for space communications

Recent advances in pseudomorphic high-electron-mobility transistor (PMHEMT) monolithic microwave integrated circuit (MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. The development of V-band PMHEMT/MMIC components including power amplifiers and phase shifters is described. For the single-stage MMIC power amplifier employing a 200 micron PMHEMT, we achieved 151.4 mW output power (757.0 mW/mm) with 1.8 dB associated gain and 26.4 percent power-added efficiency at 60 GHz. A two-stage MMIC amplifier utilizing the same devices demonstrated small-signal gain as high as 15 dB at 58 GHz. And, for the phase shifter, a four-bit phase shifter with less than 8 dB insertion loss from 61 to 63 GHz was measured.

Lan, G. L.↗
NASA NTRS1974

Low distortion automatic phase control circuit

A voltage controlled phase shifter is rendered substantially harmonic distortion free over a large dynamic input range by employing two oppositely poled, equally biased varactor diodes as the voltage controlled elements which adjust the phase shift. Control voltages which affect the bias of both diodes equally are used to adjust the phase shift without increasing distortion. A feedback stabilized phase shifter is rendered substantially frequency independent by employing a phase detector to control the phase shift of the voltage controlled phase shifter.

Hauge, G.↗
DOE OSTI2022

Reconfigurable quantum phononic circuits via piezo-acoustomechanical interactions

Abstract We show that piezoelectric strain actuation of acoustomechanical interactions can produce large phase velocity changes in an existing quantum phononic platform: aluminum nitride on suspended silicon. Using finite element analysis, we demonstrate a piezo-acoustomechanical phase shifter waveguide capable of producing ± π phase shifts for GHz frequency phonons in 10s of μm with 10s of volts applied. Then, using the phase shifter as a building block, we demonstrate several phononic integrated circuit elements useful for quantum information processing. In particular, we show how to construct programmable multi-mode interferometers for linear phononic processing and a dynamically reconfigurable phononic memory that can switch between an ultra-long-lifetime state and a state strongly coupled to its bus waveguide. From the master equation for the full open quantum system of the reconfigurable phononic memory, we show that it is possible to perform read and write operations with over 90% quantum state transfer fidelity for an exponentially decaying pulse.

Taylor, Jeffrey C. (ORCID:0000000215982436)↗
NASA NTRS1991

Millimeter-wave pseudomorphic HEMT MMIC phased array components for space communications

Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.

Lan, G. L.↗
NASA NTRS2002

K-Band Reflectarray Antenna Based on Ferroelectric Thin Films: What Have We Learned so Far

The Applied RF Technology Branch of the NASA Glenn Research Center, Cleveland, Ohio, has an on-going effort in the area of thin film ferroelectric technology for microwave applications. Particular attention has been given to developing ferroelectric phase shifters for the implementation and experimental demonstration of an electronically steerable reflectarray antenna. In the process of optimizing these material to fit the implementation requirements of the aforementioned antenna, we have accumulated a great deal of information and knowledge in areas such as the effect of the composition of the ferroelectric thin films on phase shifter performance, self assembled monolayers (SAMs) in the metallic/ferroelectric interface and their impact on phase shifter performance, correlation between microstructure and microwave properties, and the effect of selective etching on the overall performance of a thin film-ferroelectric based microwave component, amongst others. We will discuss these issues and will provide an up-dade of the current development status of the reflect-array antenna.

Miranda, Felix A.↗
NASA NTRS1988

The 30-GHz monolithic receive module

The fourth year progress is described on a program to develop a 27.5 to 30 GHz GaAs monolithic receive module for spaceborne-communication antenna feed array applications, and to deliver submodules for experimental evaluation. Program goals include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five bit phase shifter, and a maximum power consumption of 250 mW. Submicron gate length single and dual gate FETs are described and applied in the development of monolithic gain control amplifiers and low noise amplifiers. A two-stage monolithic gain control amplifier based on ion implanted dual gate MESFETs was designed and fabricated. The gain control amplifier has a gain of 12 dB at 29 GHz with a gain control range of over 13 dB. A two-stage monolithic low noise amplifier based on ion implanted MESFETs which provides 7 dB gain with 6.2 dB noise figure at 29 GHz was also developed. An interconnected receive module containing LNA, gain control, and phase shifter submodules was built using the LNA and gain control ICs as well as a monolithic phase shifter developed previously under this program. The design, fabrication, and evaluation of this interconnected receiver is presented. Progress in the development of an RF/IF submodule containing a unique ion implanted diode mixer diode and a broadband balanced mixer monolithic IC with on-chip IF amplifier and the initial design of circuits for the RF portion of a two submodule receiver are also discussed.

Bauhahn, P.↗
NASA NTRS2000

Radio Frequency (RF) Micro-Electromechanical Systems (MEMS) Switches for Space Communications

Micro-electromechanical systems (MEMS) is an emerging technology for radio frequency (RF) systems because it has the potential to dramatically decrease loss and improve efficiency. In this paper, we address the design and fabrication of novel MEMS switches being developed at NASA Glenn Research Center. Two types of switches are being developed: a microstrip series single pole single throw (SPST) switch and a coplanar waveguide (CPW) series SPST and single pole double throw (SPDT) switches. These are being fabricated as an integral part of 50 Ohm microstrip and CPW RF integrated circuits using microfabrication techniques. The construction of the switch relies on a cantilever beam that is partially supported by a dielectric post. The cantilever beam is electro-magnetically actuated. To decrease stiction, a Si3N4 thin film is deposited over the contact area. Thus, when the switch is closed, the ON-state insertion loss is governed by the parallel plate capacitance formed by the two contacts. The isolation in the OFF-state is governed by the parasitic capacitance when the cantilever is in the up position. RF MEMS switches have been demonstrated with 80% lower insertion loss than conventional solid state devices (GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and Silicon PIN diodes) based switches. For example, a conventional GaAs five-bit phase shifter which is required for beam steering in a phased array antenna has approximately 7 dB of insertion loss at 26.5 GHz where as a comparable MEMS based phase shifter is expected to have only 2 dB of insertion loss. This translates into 56% lower power dissipation and therefore decreases the thermal load on the spacecraft and also reduces the power amplifier requirements. These benefits will enable NASA to build the next generation of deep space science crafts and micro/nano satellites.

Simons, Rainee N.↗
NASA NTRS2002

A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications

Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x)TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3, have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO3 by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 deg. phase shift with 53 V/micron dc bias and a figure of merit of 47 deg./dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 deg.. The best FWHM of these MOCLD BST films has been measured to be 0.058 deg.

VanKeuls, F. W.↗
NASA NTRS2003

A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications

Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x),TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3 have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO, by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 degree phase shift with 53 V/micron dc bias and a figure of merit of 47 degree/dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 degrees. The best FWHM of these MOCLD BST films has been measured to be 0.058 degrees.

VanKeuls, F. W.↗
NASA NTRS1990

Monolithic Optoelectronic Integrated Circuit

Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

Bhasin, Kul B.↗