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At least 91 records · Page 5

Hydrodynamically Controlled Self‐Organization in Mixtures of Active and Passive Colloids

Abstract Active particles are known to exhibit collective behavior and induce structure in a variety of soft‐matter systems. However, many naturally occurring complex fluids are mixtures of active and passive components. The authors examine how activity induces organization in such multi‐component systems. Mixtures of passive colloids and colloidal micromotors are investigated and it is observed that even a small fraction of active particles induces reorganization of the passive components in an intriguing series of phenomena. Experimental observations are combined with large‐scale simulations that explicitly resolve the near‐ and far‐field effects of the hydrodynamic flow and simultaneously accurately treat the fluid–colloid interfaces. It is demonstrated that neither conventional molecular dynamics simulations nor the reduction of hydrodynamic effects to phoretic attractions can explain the observed phenomena, which originate from the flow field that is generated by the active colloids and subsequently modified by the aggregating passive units. These findings not only offer insight into the organization of biological or synthetic active–passive mixtures, but also open avenues to controlling the behavior of passive building blocks by means of small amounts of active particles.

36 MATERIALS SCIENCE↗

Growth and passivation of individual carbon nanoparticles by C2H2 addition at high temperatures: Dependence of growth rate and evolution on material and size

Absolute kinetics for reactions of C2H2 with a series of ∼60 individual carbon nanoparticles (NPs) from graphite, graphene, graphene oxide, carbon black, diamond, and nano-onion feedstocks were measured for temperatures (TNP) ranging from 1200 to 1700 K. All the NPs were observed to gain mass by carbon addition under conditions that varied with feedstock but with large variations in initial growth rate. Long reaction periods were studied to allow the evolution of growth rates over time to be observed. Diamond NPs were found to passivate against C2H2 addition if heated above ∼1400 K, and the highly variable initial reactivity for carbon nano-onions was found to depend on the presence of non-onion-structure surface carbon. For graphitic and carbon black NPs, three distinct growth modes were observed, correlated with the initial NP mass (Minitial). Smallest graphitic and carbon black NPs, with masses <∼25 MDa, initially grew rapidly but also passivated quickly after adding <4% of Minitial. NPs in the 20–50 MDa range also passivated but only after multiple waves of fast growth separated by periods of low reactivity, with up to ∼11% total mass gain before passivation. The largest carbon black and graphitic NPs, with Minitial >50 MDa, grew rapidly and continuously, adding up to ∼300% of Minitial with no sign of rate slowing as long as C2H2 was present. The efficiencies for C2H2 addition and etching by O2 are strongly correlated, but the correlation changes as the NPs passivate. Growth and passivation mechanisms are discussed.

Chemistry↗

Interacting galaxies in the IllustrisTNG simulations – V. Comparing the influence of star-forming versus passive companions

ABSTRACT We study interacting galaxy pairs in the TNG100-1 and TNG300-1 cosmological simulations using previously generated closest companion samples. We study the specific star-formation rates (sSFRs) of massive ($10^{10} \, {\rm M}_{\odot } \lt M_* \lt 10^{12} \, {\rm M}_{\odot }$ ) galaxies at z ≤ 0.2 as a function of separation from the closest companion galaxy. We split our sample based on whether the companion galaxy is star-forming or passive. We find that galaxies with close star-forming companions have sSFRs that are enhanced (on average) by a factor of 2.9 ± 0.3 in TNG100-1 and 2.27 ± 0.06 in TNG300-1 compared to controls, with enhancements present out to separations of ∼300 kpc. Galaxies with passive companions in TNG300-1 exhibit mild sSFR suppression (∼12 per cent) at 100–300 kpc and small sSFR enhancements at separations below 50 kpc. sSFR suppression is strongest in pairs where the galaxy’s stellar mass is more than 2 times that of its passive companion. By generating a stellar mass-matched (‘twinned’) sample in TNG300-1, we show that differences in sSFR trends between companion types are not a result of intrinsic stellar mass differences in star-forming versus passive galaxies. We compare with an analogous sample of galaxy pairs from SDSS, finding consistent results between observations and simulations. Overall, we find that star-forming galaxies show enhanced sSFRs regardless of companion type, but that galaxies with close passive companions are more likely to be passive themselves.

Astronomy & Astrophysics↗

A Passivity-Shortage Based Control Design for Teleoperation With Time-Varying Delays

This letter investigates the effect of time-varying delays in bilateral teleoperation, with respect to stability and performance, using the properties of passivity-shortage. Until recently, the desired stability and performance characteristics were achieved using the concept of passivity. However, passivity is limited to systems of relative degree zero or one, while passivity-shortage includes systems of higher relative degrees and possibly of non-minimum phase. Passivity-shortage also arises naturally when data transmission is subject to delays, either constant or time-varying. In this letter, the properties of passivity-shortage are employed to design a simple negative feedback controller. We show that the proposed method provides a faster responding solution and improved performance compared to the existing approaches. The performance improvements include improved steady-state error convergence, and robustness against environmental disturbances, even in the presence of varying delays.

42 ENGINEERING↗

Development of HVPE-Grown III-V Solar Cells Passivated with AlInP

We present the first AlInP-passivated solar cells grown by dynamic hydride vapor phase epitaxy (D-HVPE). Single junction (1J) GaAs and GaInP/GaAs (2J) tandems with AlInP passivation achieve AM1.5G efficiencies of 26.0% and 28.5%, respectively, which are the highest reported efficiencies for HVPE-grown devices of each type. 1J devices passivated with either AlInP or GaInP exhibit similar VOC and long wavelength current collection, indicating that both windows provide similar passivation. Adding AlInP passivation to the 2J solar cell improves the VOC by -50 mV relative to the device passivated by a GaInP emitter. These achievements remove one of the last barriers limiting parity of HVPE device efficiencies with state-of-the-art.

AlInP↗

Communication—Dissolution and Passivation of a Ni-Cr-Fe-Ru-Mo-W High Entropy Alloy by Elementally Resolved Electrochemistry

The formation and dissolution of the passive film on a novel NiCrFeRuMoW high entropy alloy in H 2 SO 4 was measured with atomic emission spectroelectrochemistry. Passivation involved Cr and Ru enrichment, whether passivation was achieved spontaneously at open circuit or by potentiostatic step into the passive domain. The other elements, Ni, Fe, Mo, and W, dissolved at rates approximately proportional to their bulk concentrations. The air formed film showed only a Cr enrichment. Excellent corrosion resistance properties were indicated by spontaneous passivation, the low passive current in the polarization curve, and the absence of detectable elemental dissolution during the active peak.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition

A novel deep-ridge laser structure with atomic-layer deposition (ALD) sidewall passivation was proposed that enhances the optical characteristics of 8-µm ridge width III-nitride violet lasers on freestanding m -plane GaN substrates. The internal loss was determined using the variable stripe length method, where the laser structure with ALD sidewall passivation showed lower internal loss compared to the conventional shallow-ridge laser design. ALD sidewall passivation plays a critical role in device improvements; compared to the lasers without ALD sidewall passivation, the lasers with ALD sidewall passivation yield improved optoelectrical performance and longer lifetime under continuous-wave operation at high current density. This work demonstrates the importance of ALD sidewall passivation to laser performance, which enables high energy efficiency.

Wong, Matthew S.↗

Guidance for Monitoring Passive Groundwater Remedies Over Extended Time Scales

Passive remediation can be appropriate where natural processes and actions such as institutional controls mitigate exposure to contaminated groundwater, achieving remedial action objectives and protectiveness of human health and the environment. Monitored natural attenuation (MNA) is a prevalent passive remediation strategy supported by a regulatory framework and monitoring design guidance. However, long-term passive remedies are usually selected in combination with at least one active remedy, such as source removal, in situ treatment, or pump-and-treat, functioning as a complementary method for achieving remediation objectives and meeting the applicable statutory and regulatory requirements. However, MNA and existing monitoring guidance primarily target situations where the remedial action objectives are met within a few decades. When time scales for passive remediation extend to many decades (50 years or more), a corresponding change in monitoring strategy is needed to adapt to the extended time scale. This document provides guidance for implementing an extended-scale monitoring (ESM) approach appropriate for long-duration passive remediation. Extended-scale is defined in this document with respect to time (i.e., a long duration of remediation) and a large enough physical scale such that downstream receptors will not be impacted within the remediation timeframe. ESM applies to slow-moving groundwater contaminant plumes and emphasizes monitoring primarily for potential exposure pathways. For this approach, the primary monitoring objective is to demonstrate that the plume diminishes before reaching the receptor zone or point of compliance and/or a receptor does not receive concentrations above the compliance limit. While the overall objectives of protecting human health and the environment are the same as for plumes where remediation can occur over a shorter time period, the time scales between decisions are longer and the dynamics of plume evolution are slower. To this end, a scenario-based strategy is described for different plume and source conditions, defining a containment and receptor zones. The containment zone is the area where the risk of exposure to groundwater contamination can be mitigated (e.g., through institutional controls) during the remediation time period. The receptor zone is defined as the area where exposure to groundwater contamination cannot be mitigated and compliance concentration standards must be met. Within the containment zone, slow plume migration may occur, leading to concentrations that exceed compliance standards. However, where distance to the receptor zone is large relative to plume migration and attenuation rate, this approach can be protective of the receptor zone. Selection of a long-duration passive remedy needs to be based on sufficient understanding of contaminant sources, hydrogeology, and contaminant plumes. A strong technical basis, supported by predictive analysis, is recommended to substantiate that contamination is expected to stay within the containment zone during the active remediation and attainment phase of the remedy, and diminish to meet compliance standards within the extended timeframe prior to reaching the receptor zone (e.g., many decades or even centuries). The ESM approach is based on verification of plume behavior and not on detailed plume dynamics. Monitoring is conducted to confirm expected behavior with an emphasis on exposure pathways to verify that plumes remain contained in areas where the protectiveness objectives can be met. ESM should not be adopted if there is significant risk of the plume extending beyond the containment zone. Given the slow movement within the containment zone, less frequent sampling is required relative to approaches used for conventional-scale remediation.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Quantum cascade laser with monolithically integrated passive waveguide

A photonic integrated circuit device includes a passive waveguide section formed over a substrate, a quantum cascade laser (QCL) gain section formed over the substrate and adjacent to the passive waveguide section, and a taper section disposed between and in contact with each of the passive waveguide section and the QCL gain section. In some embodiments, the passive waveguide section includes a passive waveguide core layer disposed between a first cladding layer and a second cladding layer. In some examples, the QCL gain section includes a QCL active region disposed between a first confinement layer and a second confinement layer, where the QCL active region has a lower index of refraction than each of the first and second confinement layers. In some embodiments, the taper section is configured to optically couple the QCL gain section to the passive waveguide section.

Jung, Seungyong↗

Passive and compact liquid metal heat switch

A passive heat switch device is disclosed that includes a casing defining a closed channel, as well as a passive thermal actuator and liquid slug positioned inside the closed channel. The closed channel includes a heat conducting region made of a heat conducting material and an insulating region made of an insulating material. The passive thermal actuator is thermally coupled to the heat conducting material of the heat conducting region and extends into the insulating region of the closed channel. The passive thermal actuator deforms when an actuator temperature falls within a switching temperature range. The liquid slug is positioned within the closed channel and contacts at least a portion of the passive thermal actuator and the closed channel and is configured to move along the closed channel between the insulating region and the thermally conductive region in response to deformation of the passive thermal actuator.

42 ENGINEERING↗

Hydrogen Stability and Bonding in SiN x and Al 2 O 3 Dielectric Stacks on Poly-Si/SiO x Passivating Contacts

Polycrystalline Si on SiO x passivating contacts enables some of the highest efficiency single-junction Si photovoltaic devices, but the high-temperature firing process needed for industrial metallization can significantly reduce passivation. We show that after firing, the implied open-circuit voltage, iV oc , for the Al 2 O 3 /SiN x /poly-Si/SiO x /c-Si stack is 20-30 mV higher than the SiNx/Al 2 O 3 /poly-Si/SiO x /c-Si stack and therefore provides better passivation of the SiO x /c-Si interface. Using effusion measurements and Fourier transform infrared spectroscopy, we demonstrate that more than twice as much hydrogen is retained in the dielectric up to the peak firing temperature of ~800 degrees C for Al 2 O 3 -capped structures. If the Al 2 O 3 layer is not present in the stack, after firing, the iVoc is lower by 50-100 mV compared to Al 2 O 3 /SiN x or SiN x /Al 2 O 3 stacks. These studies will inform future work on the role of dielectrics in aiding the passivation of poly-Si/SiO x passivating contacts.

08 HYDROGEN↗

(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity

We demonstrate reduced surface recombination velocity (SRV) and enhanced power-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solar cells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator. We show the APTMS serves to passivate defects at the perovskite surface, while also decoupling the perovskite from detrimental interactions at the C 60 interface. We measure a SRV of ~125 ± 14 cm/s, and a concomitant increase of ~100 meV in quasi-Fermi level splitting in passivated devices compared to the controls. We use time-resolved photoluminescence and excitation-correlation photoluminescence spectroscopy to show that APTMS passivation effectively suppresses non-radiative recombination. We show that APTMS improves both the fill factor and open-circuit voltage (V OC ), increasing V OC from 1.03 V for control devices to 1.09 V for APTMS-passivated devices, and leads to a PCE increase from 15.90% to 18.03%. Here, we attribute the enhanced performance to reduced defect density resulting in suppressed nonradiative recombination and lower SRV at the perovskite/transport layer interface.

14 SOLAR ENERGY↗

Corrosion evaluation of Ti–6Al–4V manufactured by electron beam melting in Ringer’s physiological solution: an in vitro study of the passive film

We report that electrochemical characteristics and semiconducting behavior of additively manufactured electron beam melted (EBM) and wrought (WR) Ti–6Al–4V (Ti-G5) are compared in Ringer’s physiological solution. X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) confirmed the α+β structure of the tested materials, with two different microstructure types of “bimodal” and “basket-weave” for WR and EBM, respectively. Potentiodynamic polarization (PDP) revealed that the corrosion current density for EBM (i corr =0.27±0.06 μA cm -2 ) is less than the WR (i corr =0.70±0.05 μA cm -2 ). Moreover, potentiostatic polarization (PS) that was employed to form the passive layers at three different potentials of 300, 500, and 700 mV Ag/AgCl , showed that the passive films on the EBM sample are thinner. This finding was confirmed by electrochemical impedance spectroscopy (EIS). Furthermore, through Mott–Schottky (M–S) analysis, donor densities on WR passive films were found to be ~1.5 times larger than EBM. Although PS and EIS confirmed that the passive layer on EBM is thinner, it provides higher corrosion resistance than WR. The passive layer on both samples were found to have n-type characteristics with a duplex structure.

36 MATERIALS SCIENCE↗

Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al 2 O 3 with SiN x capping

In this paper, we report on the direct comparison of Al 2 O 3 films deposited by plasma-assisted atomic layer deposition (ALD) and atmospheric pressure chemical vapor deposition (APCVD) techniques on the passivation properties of both bare and boron diffused Si surfaces. It is found that ALD and APCVD deposited Al 2 O 3 layers with SiN x capping have very similar chemical composition, hydrogen concentration at the Al 2 O 3 /Si interface, and interface defect density (D it ), but the ALD film has slightly higher negative fixed charge (Q f ) after a high temperature (~750 °C) contact firing cycle typically used for solar cell fabrication. Both films showed excellent surface recombination velocities of <5 cm/s on planar and textured un-diffused Si wafers, but the ALD films gave 1 to 8 fA/cm 2 lower emitter saturation current densities (J 0e ) on implanted boron emitters with sheet resistance in the range of 90–180 Ω/. This is attributed to the observed slightly higher negative charge-induced field-effect passivation in the ALD films. However, SiN x /Al 2 O 3 /p + /n/n + passivated emitter rear totally diffused (PERT) cell structures fabricated with 110 and 150 Ω/ emitter in this study showed no appreciable difference in cell efficiency. Device analysis and simulations showed that even for >23% high-performance solar cells design, with very low bulk and rear contact recombination, the observed small difference in J 0e has negligible effect on cell efficiency. Furthermore, APCVD Al 2 O 3 passivation of B emitter can produce comparable efficiencies to their counterpart ALD Al 2 O 3 passivated n-type Si solar cells.

14 SOLAR ENERGY↗

Electrical passivation of III-V multijunction solar cells with luminescent coupling effect

Perimeter recombination is one of the causes identified for having a nonuniform luminescent coupling effect in III-V multijunction solar cells. A potential solution could be the electrical passivation of the multijunction solar cell perimeter. To test this hypothesis, electrical passivation of InGaP/GaAs/Ge 3-junction solar cells was done by the atomic layer deposition of thin Al2O3 films. Further, perimeter passivation of a 3-junction solar cell relatively increased current collection measured at luminescent coupling and direct subcell excitation by as much as 11.4% and 29.8%, respectively. Meanwhile, the current homogeneity improved relatively by as much as 7.9% after electrical passivation. At 1-sun global standard illumination (AM 1.5G), 0.2% absolute conversion efficiency increase was achieved. Therefore, electrical passivation of fully working III-V multijunction solar cells is a non-invasive, post-treatment process that can recover losses due to surface defects caused by oxidation.

14 SOLAR ENERGY↗

Chemical Passivation of Crystalline Si by Al 2 O 3 Deposited Using Atomic Layer Deposition: Implications for Solar Cells

The atomistic-level mechanism for the chemical passivation of the monocrystalline Si (c-Si) surface with thermally annealed Al 2 O 3 was studied using in situ infrared spectroscopy and photoconductance decay measurements. Al 2 O 3 was deposited on high-lifetime, float-zone c-Si substrates using atomic layer deposition (ALD) from trimethylaluminum (TMA), and H 2 O or O 3 . Surface-sensitive attenuated total reflection Fourier transform infrared spectroscopy was used to monitor the c-Si/Al 2 O 3 interface, as well as the bulk of the Al 2 O 3 film during the entire process. Our results show that some surface Si–H bonds are preserved after the ALD of Al 2 O 3 on H-terminated Si. During the annealing step at 400 °C, restructuring occurs at the c-Si/Al 2 O 3 interface to form interfacial SiO x . Isotope labeling was used to differentiate interfacial SiD bonds on the c-Si surface from H incorporated in Al 2 O 3 . Within the sensitivity of our infrared setup (~10 13 cm –2 ), we did not observe any net migration of atomic H or D from Al 2 O 3 to the c-Si/Al 2 O 3 interface. To isolate the effects of chemical and field-effect passivation of Al 2 O 3 thin films, we carried out surface passivation studies on c-Si/SiO 2 /Al 2 O 3 stacks. We also annealed these stacks in different atmospheres to test the influence of annealing atmospheres on the chemical passivation of c-Si by Al 2 O 3 and observed that O 2 -containing atmosphere led to the best surface chemical passivation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

GaAs is well known for its extremely high electron mobility and direct band gap. Owing to the technological advances in silicon-based technology, GaAs has been limited to niche areas. This paper discusses the application of GaAs in molecular electronics and spintronics as a potential field for considering this amazing but challenging material. GaAs is challenging because its surface is characterized by a high density of surface states, which precludes the utilization of this semiconducting material in mainstream devices. Sulfur(S)-based passivation has been found to be significantly useful for reducing the effect of dangling bonds and was researched thoroughly. GaAs applications in molecular spintronics and electronics can benefit significantly from prior knowledge of GaAs and S interactions because S is a popular functional group for bonding molecular device elements with different semiconductors and metals. In this article, the problem associated with the GaAs surface is discussed in a tutorial form. A wide variety of surface passivation methods has been briefly introduced. We attempted to highlight the significant differences in the S-GaAs interactions for different S passivation methods. We also elaborate on the mechanisms and atomic-scale understanding of the variation in surface chemistry and reconstruction due to various S passivation methods. It is envisioned that GaAs and thiol-terminated molecule-based novel devices can exhibit innovative device characteristics and bring the added advantage of S-based passivation.

36 MATERIALS SCIENCE↗

Enabling Efficiencies > 22.5% with Metal Oxide Passivating Contacts using Low-Cost Spatial Atomic Layer Deposition (Final Technical Report)

In this project, the University of Central Florida (UCF) worked to both increase module efficiency and reduce manufacturing cost by driving demonstrated lab-scale passivating contact technology using materials and processes compatible with high-volume manufacturing for crystalline silicon (c-Si) photovoltaic (PV) cells. Passivating contacts have garnered significant attention in recent years. They provide a means of suppressing contact recombination, a loss mechanism that limits the performance of industrially relevant cell architectures like Al back surface field (Al-BSF) cells and passivated emitter and rear cells (PERC). Most of the development of passivating contact technology has focused on the use of doped amorphous silicon or doped polysilicon contacts, but both suffer from parasitic optical absorption amongst other issues. Our team developed fully transparent hole-selective heterojunctions, deposited using atomic layer deposition (ALD), and showed how they could be incorporated into c-Si PV cells. The team conducted experiments to understand the process-structure-property relationship of hole-selective oxides, surface passivation oxide materials, and transparent conductive oxides deposited by ALD, and use that understanding to reduce contact recombination, contact resistivity, and parasitic optical absorption within c-Si PV cells. Before getting into the details of the report, we would like to note that COVID-19 has made it more challenging to conduct experimental research at UCF. UCF has a number of mandatory policies in place to ensure social distancing, testing, and contact tracing are all carried out in day-to-day operations. Despite these challenges, we worked diligently to make progress on this project in a manner that was as safe as possible. Over the course of the project, the UCF team and its collaborators have made the following discoveries and developments.

14 SOLAR ENERGY↗