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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Effect of HfO{sub 2} on the dielectric, optoelectronic and energy harvesting properties of PVDF

In this article, energy recovery based on PVDF doped with HfO{sub 2} is proposed. The free energy of CH{sub 2}=CF{sub 2} is determined in different base with the B3LPY functional. The basis set LanL2DZ was chosen because it takes into account the atom of hafnium of atomic number Z=72 which exceeds the extension of some basis sets. In addition, LanL2DZ gives an accurate result and a reasonable computing time. The geometries of the molecules were optimized with B3LPY/LanL2DZ. The motivation of this study is the improvement of the optoelectronic, dielectric and piezoelectric properties of PVDF by introducing HfO{sub 2} into its matrix. We determined the parameters of (−CH{sub 2}−CF{sub 2}−){sub 3}⋅xHfO{sub 2} and identified the effect of HfO{sub 2} on the PVDF. It appears that the permittivity of the modified PVDF increases. When the PVDF is doped once or twice, a fluorine atom is captured by the hafnium. The migration of fluorine towards HfO{sub 2} considerably favors the electric polarization of the molecule. It then results in an important dipole moment with a polar phase undoubtedly favored. Our results show that the molecule (−CH{sub 2}−CF{sub 2}−){sub 3}⋅HfO{sub 2} is a good dielectric material (E{sub g}=5.90 eV) and can be a good piezoelectric material. The electronic affinity of the modified PVDF is significantly higher than that of virgin PVDF. This demonstrates that HfO{sub 2}-doped PVDF is more stable than virgin PVDF. The piezoelectric properties are significantly improved. The piezoelectric coefficient varies between 13.111 and 25.635 pC N{sup −1} for the modified PVDF compared to 11.979 pC N {sup −1} for the virgin PVDF. In conclusion, HfO{sub 2} improves the dielectric, optoelectronic and piezoelectric properties of PVDF.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Enhanced optoelectronic and elastic responses in fluorinated penta-BCN

We report surface passivation in two-dimensional (2D) materials is one of the best approaches to modulate the structural, dynamical, and mechanical stabilities thereby enhancing chemical and physical properties for optoelectronic applications. Here, we report an ab-initio investigation on structurally, thermally, dynamically, and mechanically stable, and experimentally feasible fluorinated penta-BCN (F-BCN) monolayer. The structural reconstruction after fluorination, increases bond lengths and thickness to reduce the average stiffness and elasticity attaining the mechanical isotropy. Nevertheless, the value of 2D Young’s modulus of F-BCN is comparable to the pristine structure at 6% of compression without mechanical instability. A significant bandgap tailoring is achieved, similar to that of mechanical sensitivity, due to applied strain. Remarkably, following the fluorine passivation, the monolayer’s induced wide direct bandgap semiconducting behavior improves optical absorbance and reflectivity, decreases energy loss, changes optical anisotropy, and makes it a promising candidate material for optoelectronic and nanomechanical applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Realization of BaZrS 3 chalcogenide perovskite thin films for optoelectronics

BaZrS 3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7–1.8 eV, a very strong light-matter interaction, and a high chemical stability. Due to the lack of quality thin films, however, many fundamental properties of chalcogenide perovskites remain unknown, hindering their applications in optoelectronics. In this work, we report the fabrication of BaZrS 3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10 19 -10 20 cm -3 . Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm 2 /Vs. The absorption coefficient is > 10 5 cm -1 at photon energy >1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. By assuring that BaZrS 3 is a promising candidate, these results potentially unleash the family of chalcogenide perovskites for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Colloidal Synthesis of Single-Layer Quasi-Ruddlesden–Popper Phase Bismuth-Based Two-Dimensional Perovskite Nanosheets with Controllable Optoelectronic Properties

Single- and few-layered two-dimensional (2D) nanomaterials have attracted intense research interest in the last two decades due to their unique electronic and optoelectronic properties leading to various potential applications. Herein, we report the colloidal synthesis of Bi-based 2D perovskite nanosheets (PEG6-NH 3 +) n Cs 3-n Bi 2 X 9 , where X = CI, Br, and I, through careful design of reaction conditions and selection of poly(ethylene glycol) (PEG6) surface passivating ligands. The 2D nanosheets are similar to 5 nm in thickness with micron-sized lateral dimensions and display composition-dependent band gap and work function modulation. Furthermore, small-angle X-ray scattering analysis substantiates that the individual inorganic crystal layer, Cs 3-n Bi 2 X 9 , is separated by the spacer, PEG6 ligand. Additionally, we determined that PEG6-NH 2 is an essential passivating ligand and spacer for the formation of Bi-based 2D nanosheets. Most importantly, controlled crystallization of the colloidal dispersion of nanosheets results in the formation of superlattice microstructures of the quasi-Ruddlesden-Popper phase. These microstructures can be exfoliated to ultrathin nanosheets by overcoming the van der Waals interaction between the organic passivating layers. The controlled synthesis of lead-free 2D perovskite nanosheets presented here can expand their utility to photocatalytic and optoelectronic applications with reduced toxicity.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Applicability of Allen–Heine–Cardona Theory on MO x Metal Oxides and ABO 3 Perovskites: Toward High-Temperature Optoelectronic Applications [plus supplemental information]

We report characterizing the temperature-dependent electronic structures of optoelectronic materials is vital for their application in high-temperature processes. Allen–Heine–Cardona (AHC) theory is an established theory to determine the impact of electron–phonon coupling on the temperature renormalization of the electronic structure. A question of fundamental interest is how applicable this approach can be in a broad range of materials. Herein, we establish the consensus on the temperature dependence of band gaps between AHC predictions and experimental measurements, in a versatile set of nine MO x metal oxides and six ABO 3 perovskites that are utilized as gas sensors. Both calculations and measurements point to the appreciable band gap downshifts within the temperature range relevant to typical high-temperature applications in all examined materials. The correlation between the band gaps and temperatures was quantified at zero- and finite-temperature limits using the analytical parameters of the O’Donnell model. We found fairly comparative agreements between AHC- and experiment-derived parameters, especially for the parameters (S and $\langle\hbar$ω$\rangle$) defining the temperature dependence behavior of band gaps at the finite-temperature regime. Our findings provide important implications for the first-principles modeling of the electronic structures and their temperature dependency, which should be the focus toward high-temperature optoelectronic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

First-Principles Discovery of Novel LiInP 2 S 6 Polymorphs with Promising Optoelectronic Responses

Recent advances in two-dimensional (2D) van der Waals (vdW) metal thiophosphates have attracted considerable attention due to their promising ionic conductivity, optical characteristics, and tunable physical properties. Within this material family, LiInP 2 S 6 has emerged as an intriguing candidate, not only because of its sensitivity to air and moisture but also due to its suitable band gap within the UV−vis range, enabling potential optoelectronic and photocatalytic applications. In this study, through comprehensive first-principles investigations, we unveil two previously unreported polymorphs of LiInP 2 S 6 in the monoclinic C2/c and trigonal P3̅1c (in-gap) space groups, in addition to examining the experimentally synthesized P3̅1c (in-layer) phase. Our studies identify the C2/c structure as the ground state, lying 9 meV per unit cell lower in energy than the experimentally realized trigonal P3̅1c (in-layer) phase. Further, we systematically examine the elastic, mechanical, thermodynamical, dynamical, electronic, and optical properties of all three polymorphs, confirming their mechanical, thermal, and dynamical stability. Notably, the P3̅1c (in-gap) phase exhibits enhanced stiffness, while the calculated indirect band gaps and strong photon absorption in the UV−vis range (∼3 eV) highlight the potential of the studied LiInP 2 S 6 phases for iontronic devices and optoelectronic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Oxidation-Induced Polymerization of InP Surface and Implications for Optoelectronic Applications

InP is among the most studied materials for energy-conversion applications including optoelectronics and photoelectrochemical devices. One of the long-standing challenges with this material, and III–V semiconductors more generally, is to understand and control surface oxide formation, which critically impacts device functionality, performance, and durability. In this work, we integrate advanced in situ ambient pressure X-ray photoelectron spectroscopy (APXPS) and ab initio simulations to reveal the mechanism of the oxidation process on the InP(001) surface. By interpreting the APXPS results through direct ab initio spectroscopic calculations of surface models, and by comparing calculated and measured work functions, we provide an unbiased picture of the chemical evolution of the thermal oxide. Furthermore, at low temperatures (<573 K), O 2 exposure leads to predominant formation of cross-linked PO x units dispersed with submonolayer thickness, which grow into an amorphous two-dimensional (2D) film that is kinetically limited to the surface layer. Increased temperature (>573 K) leads to the polymerization of PO x units and the formation of a complex, inhomogeneous 3D network of surface oxide that is progressively indium rich and phosphorus poor toward the surface. Finally, accelerated phosphorus loss via a hitherto unreported coupled charge-transfer isomer transformation mechanism leads to the formation of a thick, amorphous In 2 O 3 -like oxide at 773 K with very different optoelectronic and hot carrier transportation properties. In addition to unraveling complex mechanisms of surface oxidation, our results suggest the possibility of deliberately tuning oxide composition by leveraging competition between thermodynamic and kinetic factors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

High Layer Number ( n = 1–6) 2D Ruddlesden–Popper Lead Bromide Perovskites: Nanosheets, Crystal Structure, and Optoelectronic Properties

2D Ruddlesden–Popper (RP) lead halide perovskites have highly tunable structures, compositions, and properties that enable their promising optoelectronic applications. Among various 2D halide perovskites, the materials chemistry and fundamental optoelectronic properties of high layer number (n) lead-bromide RP perovskites, where n refers to the number of inorganic octahedra layers, have been less studied. Here, we report the synthesis of thin nanosheets of (PEA) 2 Cs n–1 Pb n Br 3n+1 (n = 1–6, PEA = phenylethylammonium) perovskites and study the optical properties, assigning photoluminescence emissions of 486, 496, and 505 nm to n = 4–6 phases, respectively, and reporting the photoluminescence lifetimes. Furthermore, the crystal structure of (PEA) 2 Cs 2 Pb 3 Br 10 was determined to reveal minimal octahedral structural distortions. Ultraviolet photoelectron spectroscopy measurements reveal the positioning of the valence and conduction bands for n = 1–3 phases and confirm the type-I band alignment for the (PEA) 2 Cs n–1 Pb n Br 3n+1 series, laying the foundation for rational heterostructure device design in the future.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Intrinsic Optoelectronic Characteristics of MoS 2 Phototransistors via a Fully Transparent van der Waals Heterostructure

In the past decade, intensive studies on monolayer MoS 2 -based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS 2 have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here in this paper, we reveal the intrinsic photoresponsive characteristics of monolayer MoS 2 , including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS 2 phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron-hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS 2 and lays the foundation for two-dimensional materials-based transparent phototransistors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Tunable Semiconducting Behavior and Linear-Nonlinear Optical Properties of Ag–Sn Dual-Doped Nanocrystalline CdO Thin Films for Optoelectronics

Semiconductor-based thin films have a great impact on determining the anticipated optoelectronic device construction and the advancement of cutting-edge applications. Herein, Ag and Sn dual-doped nanocrystalline transparent conducting CdO thin films were prepared on glass substrates using a cost-effective spray coating method, and their structural, morphological, optical, and semiconducting behaviors were investigated. The successful incorporation of Ag and Sn resulted in the polycrystalline nature of the deposited films without the additional peaks, as verified by X-ray diffraction (XRD) analysis. The XRD report also revealed the enhanced crystallinity (65%) at the higher doping level (3 wt % Ag and Sn-doped CdO film). All the deposited CdO films exhibited homogeneous, spherical, or round-shaped grains, with agglomeration revealed by scanning electron microscopy analysis. UV–visible spectroscopy was utilized to determine the linear and nonlinear optical properties of the deposited CdO thin films, and a reduction in the band gap from 3.891 to 3.772 eV was observed. A significant enhancement in the first- and third-order nonlinear susceptibility and nonlinear refractive index of the doped CdO films was also observed with increasing doping concentration. Hall effect data were collected at room temperature to investigate the electrical properties of all of the CdO films. The charge carrier concentration of CdO thin films was increased from 142.08 × 10 18 to 169.10 × 10 18 cm –3 , and the highest conductivity was found to be 192 s/cm on doping 3 wt % Ag–Sn. All the CdO thin films exhibited n-type conductivity, while an incredible n-type to p-type charge carrier transition was noticed at a higher doping level (3 wt % Ag–Sn). The findings of the current work are expected to advance the synthesis of semiconductor thin films through cost-effective spray coating methods for optoelectronic device applications.

deposition↗
DOE OSTI2019

Spin-optoelectronic devices based on hybrid organic-inorganic trihalide perovskites

Recently the hybrid organic-inorganic trihalide perovskites have shown remarkable performance as active layers in photovoltaic and other optoelectronic devices. However, their spin characteristic properties have not been fully studied, although due to the relatively large spin-orbit coupling these materials may show great promise for spintronic applications. Here we demonstrate spin-polarized carrier injection into methylammonium lead bromide films from metallic ferromagnetic electrodes in two spintronic-based devices: a ‘spin light emitting diode’ that results in circularly polarized electroluminescence emission; and a ‘vertical spin valve’ that shows giant magnetoresistance. In addition, we also apply a magnetic field perpendicular to the injected spins orientation for measuring the ‘Hanle effect’, from which we obtain a relatively long spin lifetime for the electrically injected carriers. Our measurements initiate the field of hybrid perovskites spin-related optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Colloidal quantum dots for optoelectronics

Colloidal quantum dots (QDs) are semiconductor nanocrystals that have unique size-tunable optoelectronic properties and are suitable for wet processing. QD research aims to answer fundamental questions about the chemical and physical properties of nanoscale materials and use these tools for technological applications ranging from bio-imaging to quantum optics. At the core of this field is a set of synthetic, processing and analytical methods designed to produce QDs in uniform ensembles that meet the highest performance standards. Here, this Primer reviews QD fabrication methods with a focus on the applications of QDs in printed optoelectronics and quantum optics. After outlining the current state-of-the-art QD syntheses, the experimental and computational analysis of QDs is discussed. These topics are then connected to the methodologies, processes and concepts required for developing QD-based photodetectors, light-emitting devices and quantum optics applications. Special attention is paid to challenges in reproducibility and current limitations of the field, such as the need to balance non-restricted material composition with high performing technology while achieving long-term stability in QD devices under operating conditions. Finally, the ongoing advancement in QD synthesis, precise atomic-level analysis and computational methodologies are highlighted as key drivers towards rational QD design, particularly in understanding how structural changes under loading impact QD properties.

optical materials↗
DOE OSTI2018

Orbital controlled band gap engineering of tetragonal BiFeO 3 for optoelectronic applications

Bismuth ferrite BiFeO 3 (BFO) is an important ferroelectric material for thin-film optoelectronic sensing and potential photovoltaic applications. Its relatively large band gap, however, limits the conversion efficiency of BFO absorber-based PV devices. In this study, based on density functional theory calculations we demonstrate that with well-designed Fe-site elemental substitution, tetragonal BFO can exhibit a much lower fundamental band gap than conventional rhombohedral BFO without forming in-gap electronic states and unravel the underlying mechanisms. Cation atomic size, electronegativity, and crystallographic symmetry are evidenced as critical parameters to tailor the metal 3d – oxygen 2p orbital interactions and thus intrinsically modify electronic structure, particularly, the shape and character of the valence and conduction band edges. With reduced band gap, improved mobility, and uncompromised ferroelectric and magnetic ground states, the present results provide a new strategy of designing high symmetry BFO for efficient optoelectronic applications.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2023

Probing single-chain conformation and its impact on the optoelectronic properties of donor–accepter conjugated polymers

The chain conformation of donor–acceptor conjugated polymers (D–A CPs) is critical to their optical and electronic properties. However, probing the conformation of D–A CPs (e.g., persistence length and contour length) at a single-chain level is challenging due to the formation of aggregates in dilute solution, even in a good solvent. In this work, we studied the chain conformation and corresponding optical spectra for high-performance D–A CPs in the single-chain state by multimodal variable-temperature scattering and spectroscopy techniques, as well as by molecular dynamics simulations. Here we found a critical role of the side-chain length and branch point in the persistence length and optical absorption due to steric effects. Hence, it is important to consider both the chain rigidity and coplanarity of the polymer backbone to achieve desirable optoelectronic properties. Our findings bridge the fundamental knowledge gaps to design new CPs with desired optoelectronic properties via molecular engineering for next-generation electronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

High-throughput and data-driven search for stable optoelectronic AMSe 3 materials

The rapid advancement in emerging optoelectronic technologies demands highly efficient, affordable, and ecofriendly materials. In this context, ternary chalcogenides, especially ternary selenides, show early promise as a material class due to their stability and remarkable electronic, optical, and transport properties. In this work, we integrate first-principles-based high-throughput computations with machine learning (ML) techniques to predict the thermodynamic stability and optoelectronic properties of 920 valency-satisfied selenide compounds. Through investigating polymorphism, our study reveals the edge-sharing orthorhombic Pnma phase (NH 4 CdCl 3 -type) as the most stable structure for most ternary selenides. High-fidelity supervised ML models are trained and tested to accelerate stability and band gap predictions. These data-driven models pin down the most influential features that dominantly control key material characteristics. The multistep high-throughput computations identify the ternary selenides with optimal direct band gaps, light carrier masses, and strong optical absorption edges. The extensive materials screening considering phase stability, toxicity, and defect tolerance, finally identifies the seven most suitable candidates for photovoltaic applications. Two of these final compounds, SrZrSe 3 and SrHfSe 3 , have already been synthesized in a single-phase form, with the latter showing an optically suitable band gap, aligning well with our findings. The non-adiabatic molecular dynamics reveal sufficiently long photoexcited charge carrier lifetimes (on the order of nanoseconds) in some of these selected selenide materials, indicating their exciting characteristics. Overall, our study suggests a robust in silico framework that can be extended to screen large datasets of various material classes for identifying promising photoactive candidates.

36 MATERIALS SCIENCE↗
DOE OSTI2016

A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage

A multi-GHz chaotic optoelectronic oscillator based on an external cavity semiconductor laser (ECL) is demonstrated. Unlike the standard optoelectronic oscillators for microwave applications, we do not employ the dynamic light output incident on a photodiode to generate the microwave signal, but instead generate the microwave signal directly by measuring the terminal voltage V(t) of the laser diode of the ECL under constant-current operation, thus obviating the photodiode entirely.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Flexible nanograss with highest combination of transparency and haze for optoelectronic plastic substrates

Transparent polymer substrates have recently received increased attention for various flexible optoelectronic devices. Optoelectronic applications such as solar cells and light emitting-diodes would benefit from substrates with both high transparency and high haze, which increase how much light scatters into or out of the underlying photoactive layers. In this letter, we demonstrate a new flexible nanograss plastic substrate that displays the highest combination of transparency and haze in the literature for polyethylene terephthalate (PET). Here, as opposed to other nanostructures that increase haze at the expense of transparency, our nanograss demonstrates the potential to improve both haze and transparency. Furthermore, the monolithic nanograss may be fabricated in a facile scalable maskless reactive ion etching process without the need for additional lithography or synthesis of nanostructures. Our 9 μ m height nanograss sample exhibits a transparency and haze of 92.4% and 89.4%, respectively, and our 34 μ m height nanograss displays a transparency and haze of 91.0% and 97.1%, respectively. We also performed durability experiments that demonstrate these nanostructured PET substrates are robust from bending and show similar transmission and haze values after 5000 cycles of bending.

42 ENGINEERING↗
DOE OSTI2023

Effect of environmental screening and strain on optoelectronic properties of two-dimensional quantum defects

Point defects in hexagonal boron nitride (hBN) are promising candidates as single-photon emitters (SPEs) in nanophotonics and quantum information applications. The precise control of SPEs requires in-depth understanding of their optoelectronic properties. However, how the surrounding environment of host materials, including the number of layers, substrates, and strain, influences SPEs has not been fully understood. Here, in this work, we study the dielectric screening effect due to the number of layers and substrates, and the strain effect on the optical properties of carbon dimer and nitrogen vacancy defects in hBN from first-principles many-body perturbation theory. We report that environmental screening causes a lowering of the quasiparticle gap and exciton binding energy, leading to nearly constant optical excitation energy and exciton radiative lifetime. We explain the results with an analytical model starting from the Bethe–Salpeter equation Hamiltonian with Wannier basis. We also show that optical properties of quantum defects are largely tunable by strain with highly anisotropic response, in good agreement with experimental measurements. Our work clarifies the effect of environmental screening and strain on optoelectronic properties of quantum defects in two-dimensional insulators, facilitating future applications of SPEs and spin qubits in low-dimensional systems.

36 MATERIALS SCIENCE↗