Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “optical phonons”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

78 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Ultrafast Modulation and Switching of Quantum-Well Lasers using Terahertz Fields

Modulation and switching of semiconductor lasers are important for laser-based information technology. Typically the speed of modulation and switching is limited by interband processes such as stimulated and spontaneous recombinations which occur on a nanosecond time scale. This is why the diode laser modulation has been restricted to tens of GHz. Modulation at higher speed is highly desirable as the information technology enters into the so-called tera-era. In this paper, we study the possibility of utilizing THz-field-induced plasma heating to modulate quantum-well lasers. This is a timely study since, with the advancement of THz solid-state sources and free-electron lasers, THz physics and related technology is currently coming out of its infancy. The investigation of interplaying THz and optical fields is also of intruiging fundamental interest. First, we introduce theoretical plasma heating results for the quantum-well optical amplifier in the presense of an intense half-cycle THz pulse. The heated carrier distributions are then utilized to calculate the THz-pulse-induced change in refractive index and gain profile. Since the electron-hole-plasma is heated using intraband transitions, we circumvent the usual complications due to an overall change in density, and the nonlinear recovery is governed solely by the carrier-LO-phonon interactions, typically 5 ps for a complete recovery. This procedure implies THz and sub-THz switching and recovery rates, respectively; using either gain modulation or index modulation. Plasma heating via steady-state THz fields is also studied. Finally, numerical simulation of a coupled set of equations to investigate the THz modulation based on a simplified model for quantum-well lasers is presented. Our results show that a semiconductor laser can be modulated at up to 1 THz with little distortion with a THz field amplitude at the order of a few kV/cm. Laser responses to a change in THz frequency will be shown. Constraints, practicalities, and applications will be discussed.

Ning, Cun-Zheng↗
NASA NTRS2009

Multiplexing of Hot-Electron Nanobolometers Using Microwave SQUIDs

We have obtained the first data on the multiplexed operation of titanium hot-electron bolometers (HEB). Because of their low thermal conductance and small electron heat capacity nanobolometers are particularly interesting as sensors for far-infrared spectroscopy and mid- and near-IR calorimetry. However, the short time constant of these devices (approximately microseconds at 300-400 mK) makes time domain or audio-frequency domain multiplexing impractical. The Microwave SQUID (MSQUID) approach pursued in this work uses dc SQUIDs coupled to X-band microresonators which are, in turn, coupled to a transmission line. We used a 4-element array of Ti HEBs operated at 415 mK in a He3 dewar with an optical fiber access. The microwave signal exhibited 10-MHz wide resonances at individual MSQUD frequencies between 9 GHz and 10 GHz. The resonance depth is modulated by the current through the bolometer via a change of the SQUID flux state. The transmitted signal was amplified by a cryogenic amplifier and downconverted to baseband using an IQ mixer. A 1-dB per ??/2 responsivity was sufficient for keeping the system noise at the level of ~ 2 pA/Hz1/2. This is more than an order of magnitude smaller than phonon noise in the HEB. The devices were able to detect single near- IR photons (1550 nm) with a time constant of 3.5 ?s. Follow-on work will scale the array to larger size and will address the microwave frequency signal generation and processing using a digital transceiver.

microwave readout↗
NASA NTRS2009

186 K Operation of Terahertz Quantum-Cascade Lasers Based on a Diagonal Design

Resonant-phonon terahertz quantum-cascade lasers operating up to a heat-sink temperature of 186 K are demonstrated. This record temperature performance is achieved based on a diagonal design, with the objective to increase the upper-state lifetime and therefore the gain at elevated temperatures. The increased diagonality also lowers the operating current densities by limiting the flow of parasitic leakage current. Quantitatively, the diagonality is characterized by a radiative oscillator strength that is smaller by a factor of two from the least of any previously published designs. At the lasing frequency of 3.9 THz, 63 mW of peak optical power was measured at 5 K, and approximately 5 mW could still be detected at 180 K.

Kumar, Sushil↗
NASA NTRS1991

Growth and characterization of high-performance photorefractive BaTiO3 crystals

Barium titanate has been used for many nonlinear optical applications primarily because it has high grain and high self-pumped phase conjugate reflectivities. However, barium titanate has had a relatively slow response time, and thus low sensitivity. Therefore, it has not been suited to real-time operations. In this report we will describe the modifications in crystal growth, doping, reduction, and poling that have produced barium titanate crystals with the fastest photorefractive response time reported to date, approximately 21 microseconds with a beam-coupling gain coefficient of 38.7 cm(exp -1) and the highest sensitivity reported to date of 3.44 cm(exp 3)/kJ. The sensitivity of these barium titanate crystals is comparable to or greater than other photorefractive oxides. We will show, for the first time, beam-coupling in barium titanate at video frame rates. We infer from response time measurements that barium titanate has a phonon limited mobility. Also, photorefractive response time measurements as a function of the crystallographic orientation and grating wave vector for our cobalt-doped oxygen reduced crystals indicate that their faster response time arise because of an increase in the free carrier lifetime.

Warde, C.↗
NASA NTRS1997

Optical and Atomic Force Microscopy Characterization of PbI2 Quantum Dots

Lead iodide (PbI2) clusters were synthesized from the chemical reaction of NaI (or KI) with Pb(NO3)2 in H2O, D2O, CH3OH, and C3H7OH media. The observation of the absorption features above 350 nm with the help of integrating sphere accessory strongly suggests the quantum dot formation of PbI2 in solution. Spectral comparison between the synthesized PbI2 clusters in solution and PbI2 nanophase by impregnation of PbI2 in four different pore-sized porous silica indicates that the PbI2 cluster size in solution is less than 2.5 nm in lateral dimension. Atomic force microscopy (AFM) measurements show that the PbL clusters deposited onto three different molecularly flat surfaces are single-layered. The measured height is 1.0 - 0.1 nm. The swollen layer thickness can be attributed to the intralayer contraction from the strong lateral interaction among PbI2 molecules, which is supported by ab initio calculation. Raman scattering measurement of LO and TO modes of PbI2 in bulk and in the confined state were also conducted in 50-150 cu cm region. The observed three bands at 74, %, 106 1/cm are assigned to TO2, LO2, and LO, mode, respectively. The relatively small red-shift in LO modes may be caused by the surface phonon polaritons of PbI2 nanophase in the porous silica.

Mu, R.↗
NASA NTRS1987

Raman spectroscopic investigations of Hg-Cd-Te melts

Raman scattering measurements are reported for a series of Hg sub1-xCd subxTe (with x less than or =0.2) materials from 295 K (room temperature) to 1126K (up to and above their liquidus temperatures), and for Hg sub1-xCd subxTe (x=0.3) at 285K. The samples were contained in high-temperature optically-flat fused silica cell. Variable temperature measurements were effected in a three-zone, high-temperature furnace equipped with optical windows, and monitored externally by three independently programmable temperature controllers. All studies were made in the backscattering geometry using the 5145 A line of an Ar+ ion laser, with incident power less than 250 mW, as the excitiation source. An intensity enhancement is observed for a mode in each of the compositions studied. The frequency of this mode varies with composition, 142/cm for HgTe, and 128/cm for both the Hg sub1-xCd subxTe (x=0.053 and 0.204) samples. In addition, a shift to lower frequency as a function of temperature is observed in all samples. This shift is most prominent for the x=0.053 sample. The temperature dependence of these modes as the liquidus temperatures are achieved and surpassed for these samples is presented as being associated with a structural transition in the Hg-rich compositions of the Hg sub1-xCd subxTe series. To our knowledge, this is the first reported study of Raman scattering by phonons in the melts of these materials.

Morrobel-Sosa, Anny↗