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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Complementary Barrier Infrared Detector

The complementary barrier infrared detector (CBIRD) is designed to eliminate the major dark current sources in the superlattice infrared detector. The concept can also be applied to bulk semiconductor- based infrared detectors. CBIRD uses two different types of specially designed barriers: an electron barrier that blocks electrons but not holes, and a hole barrier that blocks holes but not electrons. The CBIRD structure consists of an n-contact, a hole barrier, an absorber, an electron barrier, and a p-contact. The barriers are placed at the contact-absorber junctions where, in a conventional p-i-n detector structure, there normally are depletion regions that produce generation-recombination (GR) dark currents due to Shockley-Read- Hall (SRH) processes. The wider-bandgap complementary barriers suppress G-R dark current. The barriers also block diffusion dark currents generated in the diffusion wings in the neutral regions. In addition, the wider gap barriers serve to reduce tunneling dark currents. In the case of a superlattice-based absorber, the superlattice itself can be designed to suppress dark currents due to Auger processes. At the same time, the barriers actually help to enhance the collection of photo-generated carriers by deflecting the photo-carriers that are diffusing in the wrong direction (i.e., away from collectors) and redirecting them toward the collecting contacts. The contact layers are made from materials with narrower bandgaps than the barriers. This allows good ohmic contacts to be made, resulting in lower contact resistances. Previously, THALES Research and Technology (France) demonstrated detectors with bulk InAsSb (specifically InAs0.91Sb0.09) absorber lattice-matched to GaSb substrates. The absorber is surrounded by two wider bandgap layers designed to minimize impedance to photocurrent flow. The wide bandgap materials also serve as contacts. The cutoff wavelength of the InAsSb absorber is fixed. CBIRD may be considered as a modified version of the THALES double heterostructure (DH) p-i-n device, but with even wider bandgap barriers inserted at the contact layer/absorber layer interfaces. It is designed to work with either bulk semiconductors or superlattices as the absorber material. The superlattice bandgap can be adjusted to match the desired absorption cutoff wavelength. This infrared detector has the potential of high-sensitivity operation at higher operating temperatures. This would reduce cooling requirements, thereby reducing the power, mass, and volume of the equipment and allowing an increased mission science return.

Ting, David Z.↗
NASA NTRS2001

Transport Modeling for Metallic Electrode: Semiconducting Nanotube Systems

Recently, current-voltage (I-V) characteristics have been reported by Collins et al. for a system with a scanning tunneling microscope (STM) tip and a carbon nanotube. The STM tip was driven forward into a film of many entangled nanotubes on a substrate, and then was retracted, so that one of nanotubes bridged the STM and the film. I-V characteristics had two different patterns for different heights. One showed large dI/ dV with V greater than 0, small dI/dV with V less than 0, and I = 0 near V = 0 (type-I), while the other showed rectification, i.e., I does not equal 0 only with V less than 0 (type-II), with the tip grounded. We propose a physical mechanism to explain the observed I-V patterns. We consider that the observed characteristics strongly reflected the nature of the tip (metal) - nanotube (semiconductor) contact. The other end of the nanotube was entangled well in the film, and simply provided a good Ohmic contact. We will argue that there are two different contact modes: vacuum gap and touching modes, depending on the presence or absence of a tiny vacuum gap d approx. 0.1 - 0.2 nm at the junction. These modes may be related to physisorption and chemisorption, respectively. Once admitting their existence, it is naturally shown that I-V characteristics are type-I in the vacuum gap mode, and type-II in the touching mode. We argue that the nanotube had to be an n-type semiconductor judging from the I-V characteristics, contrary to often observed p-type in the transistor applications, where p-type is probably due to the oxidation in air or the trapped charges in the silicon dioxide. Additional information is contained in the original extended abstract.

Yamada, Toshishige↗
NASA NTRSDate not supplied

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

This paper presents results from metal contact processing experiments towards the implementationof durable 500 deg.C high-frequency 4H-SiC bipolar junction transistors (BJTs). Specifically, p-type ohmic contacts have been demonstrated on a 0.25 μm-thick p-type homoepitaxial layer of doping 8 x 1018± 4 x 1018cm-3. Finally, preliminary current-voltage characteristics of fabricated BJTs are presented.

RF SiC↗
NASA NTRS2023

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

This paper presents results from metal contact processing experiments towards the implementation of durable 500 °C high-frequency 4H-SiC bipolar junction transistors (BJTs) . Specifically, p -type ohmic contacts have been demonstrated on a 0.25 μm-thick p -type homoepitaxial layer of doping 8 x 10 18 ± 4 x 10 18 cm -3 . Preliminary current-voltage characteristics of fabricated BJTs are presented.

4H-SiC BJT↗
NASA NTRS1985

Heavily doped polysilicon-contact solar cells

The first use of a (silicon)/heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction or back-surface-field (BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact (BOC) control samples, the polysilicon-back solar cells show improvements in red spectral response (RSR) and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

Lindholm, F. A.↗
NASA NTRS1985

Front and back polysilicon-contacted silicon solar cells

The first use of a (silicon)/ (heavily doped polysilicon)/ (metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact control samples, the polysilicon-back solar cells show improvements in red spectral response and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

Lindholm, F. A.↗
NASA NTRS1984

Electrical characteristics of amorphous molybdenum-nickel contacts to silicon

The electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. percent Mo). The contact resistivity on both p(+) and n(+) Si is in the 0.00000 ohm sq cm range. The barrier height for as-deposited samples varies between phi-bp = 0.47-0.42 V on p-type Si and between phi-bn = 0.63-0.68 V on n-type Si, as the composition of the amorphous layer goes from Ni-rich to Mo-rich. The sum phi-bp + phi-bn always equals 1.12 V, within experimental error. After thermal treatment at 500 C for 1/2 h, the contact resistivity changes by a factor of two or less, while the barrier height changes by at most approximately 0.05 V. In light of these results, the amorphous Mo-Ni film makes good ohmic contacts to silicon.

Kung, K. T.-Y.↗
NASA NTRS1994

Making CoSi(2) Layers By Ion Implantation

Monolithic photovoltaic batteries containing vertical cells include buried CoSi(2) contact layers. Vertical-junction photovoltaic cells in series fabricated in monolithic structure. N- and p-doped silicon layers deposited epitaxially. The CoSi(2) layers, formed by ion implantation and annealing, serve as thin, low-resistance ohmic contacts between cells.

Namavar, Fereydoon↗
NASA NTRS1988

Electrochemical evaluation of the p-Si/conducting polymer interfacial properties

Results are presented from an experimental investigation of the contact resistance and interfacial properties of a p-Si/conducting polymer interface for solar cell applications. The electronic character of the polymer/semiconductor function is determined by studying the electrochemical behavior of both poly(isothianapthene) (PITN) and polypyrrole (PP) in an acetonitrile solution on p-silicon electrodes. The results obtained indicate that while PITN is intrinsically more conductive than PP, neither passivates surface states nor forms ohmic contact.

Nagasubramanian, G.↗
NASA NTRS1991

A new method for measuring low resistivity contacts between silver and YBa2Cu3O(7-x) superconductor

Several methods of measuring contact resistivity between silver electrodes and YBa2Cu3O(7-x) superconductors were investigated; including the two-point, the three point, and the lap-joint methods. The lap-joint method was found to yield the most consistent and reliable results and is proposed as a new technique for this measurement. Painting, embedding, and melting methods were used to apply the electrodes to the superconductor. Silver electrodes produced good ohmic contacts to YBa2Cu3O(7-x) superconductors with contact resistivities as low as 1.9 x 10 to the -9th ohm sq cm.

Hsi, Chi-Shiung↗
NASA NTRS1976

Application of thick-film technology to solar cell fabrication

Several uses of thick-film technology in solar cell fabrication are discussed. Wrap-around contacts are obtained by first printing and firing a dielectric over the edge and subsequently applying a low-firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and co-firing thick-film pastes, soldering, or with heat-curing conductive epoxies on low-cost substrates. Despite ongoing research, printed (thick) film vitreous protective coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. Ohmic contacts on n- and p-type silicon are considered.

Field, M. B.↗
DOE OSTI2025

One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics

Two-dimensional (2D) semiconductors are highly promising candidates for thin-film transistor applications due to their scalability, transferability, atomic thickness, and relatively high carrier mobility. However, a substantial performance gap remains between individual devices based on single-crystalline 2D films and wafer-scale integrated circuits, primarily due to defects introduced during conventional fabrication processes. Here, we report a diamond-assisted electrode transfer technique for the van der Waals integration of wafer-scale prefabricated electrode arrays onto 2D materials, enabling scalable electronics and optoelectronics. Implemented on metal–organic chemical vapor deposition-grown monolayer molybdenum disulfide, this method forms ultraclean metal–semiconductor interfaces, yielding field-effect transistors with excellent ohmic contacts, a low contact resistance of 400 Ω·μm, and a Schottky barrier height of only 9 meV. Furthermore, we demonstrate a scalable transistor array on monolayer molybdenum disulfide with excellent device performance uniformity, achieving an average field-effect mobility of 30 cm 2 V –1 s –1 and an on/off current ratio exceeding 105. Additionally, high photocurrent and responsivity were demonstrated in the array devices, showing their potential for excellent image detection. We further demonstrate the versatility of this technique by fabricating a Schottky diode array through a single-step transfer of asymmetric electrodes─low work function aluminum and high work function gold─onto monolayer tungsten diselenide. This approach provides a clean, effective solution for contact engineering in 2D materials, offering a viable pathway toward wafer-scale, high-performance 2D electronics, optoelectronics, and integrated circuits.

2D electronics↗
DOE OSTI2024

High-throughput screening of 2D materials identifies p-type monolayer WS2 as potential ultra-high mobility semiconductor

Abstract 2D semiconductors offer a promising pathway to replace silicon in next-generation electronics. Among their many advantages, 2D materials possess atomically-sharp surfaces and enable scaling the channel thickness down to the monolayer limit. However, these materials exhibit comparatively lower charge carrier mobility and higher contact resistance than 3D semiconductors, making it challenging to realize high-performance devices at scale. In this work, we search for high-mobility 2D materials by combining a high-throughput screening strategy with state-of-the-art calculations based on the ab initio Boltzmann transport equation. Our analysis singles out a known transition metal dichalcogenide, monolayer WS 2 , as the most promising 2D semiconductor, with the potential to reach ultra-high room-temperature hole mobilities in excess of 1300 cm 2 /Vs should Ohmic contacts and low defect densities be achieved. Our work also highlights the importance of performing full-blown ab initio transport calculations to achieve predictive accuracy, including spin–orbital couplings, quasiparticle corrections, dipole and quadrupole long-range electron–phonon interactions, as well as scattering by point defects and extended defects.

Chemistry↗
NASA NTRS1995

HTS thin films: Passive microwave components and systems integration issues

The excellent microwave properties of the High-Temperature-Superconductors (HTS) have been amply demonstrated in the laboratory by techniques such as resonant cavity, power transmission and microstrip resonator measurements. The low loss and high Q passive structures made possible with HTS, present attractive options for applications in commercial, military and spacebased systems. However, to readily insert HTS into these systems improvement is needed in such areas as repeatability in the deposition and processing of the HTS films, metal-contact formation, wire bonding, and overall film endurance to fabrication and assembly procedures. In this paper we present data compiled in our lab which illustrate many of the problems associated with these issues. Much of this data were obtained in the production of a space qualified hybrid receiver-downconverter module for the Naval Research Laboratory's High Temperature Superconductivity Space Experiment 2 (HTSSE-2). Examples of variations observed in starting films and finished circuits will be presented. It is shown that under identical processing the properties of the HTS films can degrade to varying extents. Finally, we present data on ohmic contacts and factors affecting their adhesion to HTS films, strength of wire bonds made to such contacts, and aging effects.

Miranda, F. A.↗
NASA NTRS1995

HTS Thin Films: Passive Microwave Components and Systems Integration Issues

The excellent microwave properties of the High-Temperature-Superconductors (HTS) have been amply demonstrated in the laboratory by techniques such as resonant cavity, power transmission and microstrip resonator measurements. The low loss and high Q passive structures made possible with HTS, present attractive options for applications in commercial, military and space-based systems. However, to readily insert HTS into these systems, improvement is needed in such areas as repeatability in the deposition and processing of the HTS films, metal-contact formation, wire bonding, and overall film endurance to fabrication and assembly procedures. In this paper, we present data compiled in our lab which illustrate many of the problems associated with these issues. Much of this data were obtained in the production of a space qualified hybrid receiver-downconverter module for the Naval Research Laboratory's High Temperature Superconductivity Space Experiment II (HTSSE-II). Examples of variations observed in starting films and finished circuits will be presented. It is shown that under identical processing the properties of the HTS films can degrade to varying extents. Finally, we present data on ohmic contacts and factors affecting their adhesion to HTS films, strength of wire bonds made to such contacts, and aging effects.

Miranda, F. A.↗
DOE OSTI2021

Design and Realization of Ohmic and Schottky Interfaces for Oxide Electronics

Understanding band alignment and charge transfer at complex oxide interfaces is critical to tailoring and utilizing their diverse functionality. Toward this goal, both Ohmic- and Schottky-like charge transfers at oxide/oxide semiconductor/metal interfaces are designed and experimentally validated. A method for predicting band alignment and charge transfer in ABO 3 perovskites is utilized, where previously established rules for simple semiconductors fail. The prototypical systems chosen are the rare class of oxide metals, SrBO 3 with B = V–Ta, when interfaced with the multifaceted semiconducting oxide, SrTiO 3 . For B = Nb and Ta, it is confirmed that a large accumulation of charge occurs in SrTiO 3 due to the higher energy Nb and Ta states relative to Ti. Furthermore, this gives rise to a high mobility metallic interface, which is an ideal epitaxial oxide/oxide Ohmic contact. On the contrary, for B = V, there is no charge transfer into the SrTiO 3 interface, which serves as a highly conductive epitaxial gate metal. Going beyond these specific cases, this work opens the door to integrating the vast phenomena of ABO 3 perovskites into a wide range of practical devices.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Material-dependent photon ionizing radiation effects in Si and GaAs PIN diodes: A numerical investigation

We present a finite-element drift-diffusion-Poisson model in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework to compare the radiation response of silicon (Si) and gallium arsenide (GaAs) PIN diodes under high-energy photon irradiation. The model solves coupled carrier continuity and Poisson’s equations with Shockley-Read-Hall recombination, and is verified against standard analytical J-V behavior. Using a simplified 1D geometry with ideal Ohmic contacts, we quantify device response under forward and reverse bias with a 100 MeV photon flux. Under forward bias, Si exhibits markedly greater radiation sensitivity than GaAs, including larger increases in current density, stronger local field and carrier-product perturbations, and higher recombination. Under reverse bias, GaAs shows larger radiation-induced photocurrent and broader current-density peaks near junctions, indicating an advantage for photodetection. Integrated steady-state recombination is consistently higher in Si across voltages. Under periodic photon pulses, GaAs produces higher-amplitude photoresponse and settles more rapidly than Si. These results highlight material-dependent trade-offs for radiation-tolerant, high-speed optoelectronics and provide guidance for selecting PIN architectures in aerospace, nuclear, and high-energy physics environments.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Exploring transport mechanisms in atomic precision advanced manufacturing enabled pn junctions

We investigate the different transport mechanisms that can occur in pn junction devices made using atomic precision advanced manufacturing at temperatures ranging from cryogenic to room temperature. We first elucidate the potential cause of the anomalous behavior observed in the forward-bias response of these devices in recent cryogenic temperature measurements, which deviates from the theoretical response of a silicon Esaki diode. These anomalous behaviors include current suppression at low voltages in the forward-bias response and a much lower valley voltage at cryogenic temperatures than theoretically expected for a silicon diode. To investigate the potential causes of these anomalies, we studied the effects of a few possible transport mechanisms, including band-to-band tunneling, bandgap narrowing, potential impact of non-Ohmic contacts, band quantization, impact of leakage, and inelastic trap-assisted tunneling, through semi-classical simulations. We find that a combination of two sets of band-to-band tunneling (BTBT) parameters can qualitatively approximate the shape of the tunneling current at low bias. This can arise from band quantization and realignment due to the strong potential confinement in δ-layers. We also find that the lower-than-theoretically-expected valley voltage can be attributed to modifications in the electronic band structure within the δ-layer regions, leading to a significant bandgap narrowing induced by the high density of dopants. Finally, we extend our analyses to room temperature operation and predict that trap-assisted tunneling (TAT) facilitated by phonon interactions may become significant, leading to a complex superposition of BTBT and TAT transport mechanisms in the electrical measurements.

band gap↗