Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “noise diodes”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Advanced Water Vapor Lidar Detection System

In the present water vapor lidar system, the detected signal is sent over long cables to a waveform digitizer in a CAMAC crate. This has the disadvantage of transmitting analog signals for a relatively long distance, which is subjected to pickup noise, leading to a decrease in the signal to noise ratio. Generally, errors in the measurement of water vapor with the DIAL method arise from both random and systematic sources. Systematic errors in DIAL measurements are caused by both atmospheric and instrumentation effects. The selection of the on-line alexandrite laser with a narrow linewidth, suitable intensity and high spectral purity, and its operation at the center of the water vapor lines, ensures minimum influence in the DIAL measurement that are caused by the laser spectral distribution and avoid system overloads. Random errors are caused by noise in the detected signal. Variability of the photon statistics in the lidar return signal, noise resulting from detector dark current, and noise in the background signal are the main sources of random error. This type of error can be minimized by maximizing the signal to noise ratio. The increase in the signal to noise ratio can be achieved by several ways. One way is to increase the laser pulse energy, by increasing its amplitude or the pulse repetition rate. Another way, is to use a detector system with higher quantum efficiency and lower noise, on the other hand, the selection of a narrow band optical filter that rejects most of the day background light and retains high optical efficiency is an important issue. Following acquisition of the lidar data, we minimize random errors in the DIAL measurement by averaging the data, but this will result in the reduction of the vertical and horizontal resolutions. Thus, a trade off is necessary to achieve a balance between the spatial resolution and the measurement precision. Therefore, the main goal of this research effort is to increase the signal to noise ratio by a factor of 10 over the current system, using a newly evaluated, very low noise avalanche photo diode detector and constructing a 10 MHz waveform digitizer which will replace the current CAMAC system.

Elsayed-Ali, Hani↗
NASA NTRS1979

Noise and loss in balanced and subharmonically pumped mixers. I - Theory. II - Application

The theory of noise and frequency conversion for two-diode balanced and subharmonically pumped mixers is presented. The analysis is based on the equivalent circuit of the Schottky diode, having nonlinear capacitance, series resistance, and shot and thermal noise. Expressions for the conversion loss, noise temperature, and input and output impedances are determined in a form suitable for numerical analysis. In Part II, the application of the theory to practical mixers is demonstrated, and the properties of some two-diode mixers are examined. The subharmonically pumped mixer is found to be much more strongly affected by the loop inductance than the balanced mixer, and the ideal two-diode mixer using exponential diodes has a multiport noise-equivalent network (attenuator) similar to that of the ideal single-diode mixer. It is concluded that the theory can be extended to mixers with more than two diodes and will be useful for their design and analysis, provided a suitable nonlinear analysis is available to determine the diode waveforms.

Kerr, A. R.↗
NASA NTRS1983

Measuring Excess Noise in SDL's

New instrument gives quantitive information on "excess noise" in semiconductor-diode laser (SDL's). By proper selection of detector, instrument tests any SDL from visible wavelengths through thermal infrared. Lasers determine excess noise in SKL source by measuring photocurrent generated in photodetector exposed first to reference laser then to SKL under test.

Katzberg, S. J.↗
NASA NTRS1979

A user oriented computer program for the analysis of microwave mixers, and a study of the effects of the series inductance and diode capacitance on the performance of some simple mixers

A user oriented computer program for analyzing microwave and millimeter wave mixers with a single Schottky barrier diode of known I-V and C-V characteristics is described. The program first performs a nonlinear analysis to determine the diode conductance and capacitance waveforms produced by the local oscillator. A small signal linear analysis is then used to find the conversion loss, port impedances, and input noise temperature of the mixer. Thermal noise from the series resistance of the diode and shot noise from the periodically pumped current in the diode conductance are considered. The effects of the series inductance and diode capacitance on the performance of some simple mixer circuits using a conventional Schottky diode, a Schottky diode in which there is no capacitance variation, and a Mott diode are studied. It is shown that the parametric effects of the voltage dependent capacitance of a conventional Schottky diode may be either detrimental or beneficial depending on the diode and circuit parameters.

Siegel, P. H.↗
NASA NTRS1983

Fundamental linewidth in solitary, ultranarrow output PbS(1-x)Se(x) diode lasers

The fundamental, quantum phase noise limited Lorentzian linewidth was directly measured from the beat-note spectra generated by heterodyning PbS(1-x)Se(x) diode lasers with a stable CO gas laser. The experimental results were matched by calculated theoretical line profiles. Linewidths as narrow as 22 kHz full width at half-maximum power were observed.

Freed, C.↗
NASA NTRS2018

Robust Waveguide Millimeter Wave Noise Source

Aspects of the present disclosure involve a system and method for generating noise waves at millimeter wave frequencies. A noise source generator is designed to be connected to a crystalline structure for efficient heat transfer and compatibility with millimeter wave receivers. The use of crystalline structure coupled to the noise source generator allows heat from a biasing device, such as a diode, to be carried away such that the diode is able to generate noise waves while being reversed biased without compromising the device. In another embodiment, the noise source generator includes the use of a backshort transmission line with vias that is connected to the biasing device for heat transfer from the biasing device to the backshort.

Ehsan, Negar↗
NASA NTRS1992

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Bhapkar, Udayan V.↗
NASA NTRS1992

Josephson effect gain and noise in SIS mixers

Superconducting tunnel diode (SIS) mixers are used for radio astronomy from 100 to 500 GHz. They are being considered for NASA spaceborne astronomy at frequencies near 1000 GHz. Measurements of gain and noise in SIS mixers at 230 and 492 GHz are reported. Relatively high gain and noise associated with Josephson currents are measured that have not been previously reported. These measurements show that Josephson currents are increasingly important as operating frequencies are raised. The techniques used to make these measurements are discussed. Measurements made with hot and cold black-bodies are shown to be inaccurate at high frequencies.

Wengler, Michael J.↗
NASA NTRS1977

Detection of upper atmospheric constituents using submillimeter wave /SMMW/ heterodyne radiometry

Submillimeter wave heterodyne radiometry has been applied to the detection and sounding of upper atmospheric constituents. The use of room-temperature Schottky-diode mixers for the receivers has yielded measurements of 70,000 K noise temperature. Coupling losses into the diode and matching of the IF output limit are observed to limit noise temperature. The technique is evaluated by calculating spectra with assumed temperature and constituent profiles. Vertical integrations are made with a multilayer atmosphere and the direct summation of absorption coefficients for the individual spectral lines is used. Results are presented for tangent path parameters for a mid-latitude summer model and the fractional parts of upper atmospheric constituents as a function of altitude.

Mcavoy, N.↗
NASA NTRS1980

Tunable diode laser heterodyne radiometer measurement of atmospheric absorption of solar radiation

A tunable infrared heterodyne radiometer (TIHR) which uses a diode laser as the local oscillator is described as well as methods for the evaluation of the excess noise characteristics of the tunable diode laser. Preliminary atmospheric absorption data taken with the TIHR are presented and show the capability of the TIHR for making the highest resolution atmospheric measurements to date.

Harward, C. N.↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Bullis, W. M.↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time as measured with different instruments or with the same instrument at different frequencies; association of infrared response spectra of poor quality germanium gamma ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways; and confirmation of the excellent quality and cosmetic appearance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon, development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗
NASA NTRS1973

Methods of measurement for semiconductor materials, process control, and devices

This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗
NASA NTRS1987

Optical communication with semiconductor laser diodes

A 25 megabit/sec direct detection optical communication system that used Q=4 PPM signalling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode transmitter and low noise silicon avalanche photodiode (APD) photodetector. Comparison of measured performance with the theoretical revealed that modeling the APD output as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 power A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain to use and overestimates of system bit error probability. A procedure is given to numerically compute system performance which uses the more accurate Webb's Approximation of the exact Conradi distribution for the APD ouput signal that does not require excessive amounts of computer time (a few minutes of VAX 8600 CPU time per system operating point). Examples are given which illustrate the breakdown of the Gaussian approximation in assessing system performance. This system achieved a bit error probability of 10 to the -6 power at a received signal energy corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

Davidson, F.↗
NASA NTRS2006

Cryogenic Pound Circuits for Cryogenic Sapphire Oscillators

Two modern cryogenic variants of the Pound circuit have been devised to increase the frequency stability of microwave oscillators that include cryogenic sapphire-filled cavity resonators. The original Pound circuit is a microwave frequency discriminator that provides feedback to stabilize a voltage-controlled microwave oscillator with respect to an associated cavity resonator. In the present cryogenic Pound circuits, the active microwave devices are implemented by use of state-of-the-art commercially available tunnel diodes that exhibit low flicker noise (required for high frequency stability) and function well at low temperatures and at frequencies up to several tens of gigahertz. While tunnel diodes are inherently operable as amplitude detectors and amplitude modulators, they cannot, by themselves, induce significant phase modulation. Therefore, each of the present cryogenic Pound circuits includes passive circuitry that transforms the AM into the required PM. Each circuit also contains an AM detector that is used to sample the microwave signal at the input terminal of the high-Q resonator for the purpose of verifying the desired AM null at this point. Finally, each circuit contains a Pound signal detector that puts out a signal, at the modulation frequency, having an amplitude proportional to the frequency error in the input signal. High frequency stability is obtained by processing this output signal into feedback to a voltage-controlled oscillator to continuously correct the frequency error in the input signal.

Dick, G. John↗
NASA NTRS1992

New approach to the design of Schottky barrier diodes for THz mixers

Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.

Jelenski, A.↗