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DOE OSTI2021

ZrN Phase Formation, Hardening and Nitrogen Diffusion Kinetics in Plasma Nitrided Zircaloy-4

Plasma nitridation was conducted to modify the surfaces of Zircaloy-4. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman analysis were used to characterize microstructures and phases. Surface indentation and cross-sectional indentation were performed to evaluate mechanical property changes. Nitridation forms a thin layer of ZrN phase, followed by a much deeper layer affected by nitrogen diffusion. The ZrN phase is confirmed by both TEM and Raman characterization. The Raman peaks of ZrN phase show a temperature dependence. The intensity increases with increasing nitridation temperatures, reaches a maximum at 700 °C, and then decreases at higher temperatures. The ZrN layer appears as continuous small columnar grains. The surface polycrystalline ZrN phase is harder than the bulk by a factor of ~8, and the nitrogen diffusion layer is harder by a factor of ~2–5. The activation energy of nitrogen diffusion was measured to be 2.88 eV. The thickness of the nitrogen-hardened layer is controllable by changing the nitridation temperature and duration.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Phase-Controllable Synthesis of Ultrathin Molybdenum Nitride Crystals Via Atomic Substitution of MoS 2

MXenes are emerging members in the two-dimensional (2D) material family and are highlighted by their high electrical conductivity. Among different MXenes, molybdenum-based MXenes, especially molybdenum nitrides (MoN x ), are rarely accessible through the common synthetic approach of selective etching due to the absence of stable MAX phase precursors. In this work, we apply the atomic substitution approach to synthesize two phases of ultrathin nonlayered molybdenum nitrides (i.e., Mo 5 N 6 and δ-MoN) from 1.6 to 42.9 nm thickness by converting layered MoS 2 under different temperatures. The morphology and 2D nature of MoS 2 are well remained in both phases. These newly created 2D materials are further characterized using Raman spectroscopy, high-resolution transmission electron microscopy, and electrical measurements, suggesting that both phases are highly crystalline and highly conductive down to the thickness of a few nanometers. Moreover, Ohmic contacts are formed between the ultrathin nitrides and Cr/Au electrodes, suggesting the great potential of the obtained nitrides for nanoelectronic device applications. The stability test shows that the Ohmic contact is well maintained after 4 weeks under ambient conditions with a slight degradation in conductivity. Furthermore, this study extends the 2D family by providing highly conductive members, offering desired building blocks for solid-state nanoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2025

Synthesis and Physical Properties of Manganese Chromium Nitride Thin Films Grown via Molecular Beam Epitaxy

Here, we demonstrate the ability to grow epitaxial thin films of manganese–chromium nitride (Mn x Cr 1–x N) across the entire composition range on magnesium oxide (MgO) (1 0 0) surfaces by molecular beam epitaxy. By independently controlling the ratio of the atomic fluxes of manganese and chromium, the compositional dependence of structural and electrical transport properties is determined. Soft X-ray absorption shows that the valence states of Cr( 3+ ) and Mn( 3+ ) remain identical among these MnCrN epitaxial films. The metallic transport behavior of binary manganese nitride (MnN) and chromium nitride (CrN) is suppressed in the ternary alloys. Changes in room temperature electrical resistivity of up to 100 times and 5 orders of magnitude at cryogenic temperatures are observed. This work expands the variety of nitride compounds available for epitaxial integration and could provide additional flexibility for the development of metal–semiconductor–insulator junctions for spintronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Twisted-layer boron nitride ceramic with high deformability and strength

Moiré superlattices formed by twisted stacking in van der Waals materials have emerged as a new platform for exploring the physics of strongly correlated materials and other emergent phenomena. However, there remains a lack of research on the mechanical properties of twisted-layer van der Waals materials, owing to a lack of suitable strategies for making three-dimensional bulk materials. Here we report the successful synthesis of a polycrystalline boron nitride bulk ceramic with high room-temperature deformability and strength. This ceramic, synthesized from an onion-like boron nitride nanoprecursor with conventional spark plasma sintering and hot-pressing sintering, consists of interlocked laminated nanoplates in which parallel laminae are stacked with varying twist angles. The compressive strain of this bulk ceramic can reach 14% before fracture, about one order of magnitude higher compared with traditional ceramics (less than 1% in general), whereas the compressive strength is about six times that of ordinary hexagonal boron nitride layered ceramics. The exceptional mechanical properties are due to a combination of the elevated intrinsic deformability of the twisted layering in the nanoplates and the three-dimensional interlocked architecture that restricts deformation from propagating across individual nanoplates. The advent of this twisted-layer boron nitride bulk ceramic opens a gate to the fabrication of highly deformable bulk ceramics.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Ion-beam assisted sputtering of titanium nitride thin films

Abstract Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. This work aims to explore effects in ion beam-assisted sputtering (IBAS), were an observed increase in nominal critical temperature and upper critical fields are in tandem with previous work on Niobium nitride (NbN). We grow thin films of titanium nitride by both, the conventional method of DC reactive magnetron sputtering and the IBAS method, to compare their superconducting critical temperatures $$T_{c}$$ T c as functions of thickness, sheet resistance, and nitrogen flow rate. We perform electrical and structural characterizations by electric transport and x-ray diffraction measurements. Compared to the conventional method of reactive sputtering, the IBAS technique has demonstrated a 10% increase in nominal critical temperature without noticeable variation in the lattice structure. Additionally, we explore the behavior of superconducting $$T_c$$ T c in ultra-thin films. Trends in films grown at high nitrogen concentrations follow predictions of mean-field theory in disordered films and show suppression of superconducting $$T_c$$ T c due to geometric effects, while nitride films grown at low nitrogen concentrations strongly deviate from the theoretical models.

36 MATERIALS SCIENCE↗

DOE OSTI2022

On the mechanism of intermolecular nitrogen-atom transfer from a lattice-isolated diruthenium nitride intermediate

Catalyst confinement within microporous media provides the opportunity to site isolate reactive intermediates, enforce intermolecular functionalization chemistry by co-localizing reactive intermediates and substrates in molecular-scale interstices, and harness non-covalent host–guest interactions to achieve selectivities that are complementary to those accessible in solution. As part of an ongoing program to develop synthetically useful nitrogen-atom transfer (NAT) catalysts, we have demonstrated intermolecular benzylic amination of toluene at a Ru 2 nitride intermediate confined within the interstices of a Ru2-based metal–organic framework (MOF), Ru 3 (btc) 2 X 3 (btc = 1,3,5-benzenetricarboxylate, i.e., Ru-HKUST-1 for X = Cl). Nitride confinement within the extended MOF lattice enabled intermolecular C–H functionalization of benzylic C–H bonds in preference to nitride dimerization, which was encountered with soluble molecular analogues. Detailed study of the kinetic isotope effects (KIEs, i.e., k H /k D ) of C–H amination, assayed both as intramolecular effects using partially labeled toluene and as intermolecular effects using a mixture of per-labeled and unlabeled toluene, provided evidence for restricted substrate mobility on the time scale of interstitial NAT. Analysis of these KIEs as a function of material mesoporosity provided approximate experimental values for functionalization in the absence of mass transport barriers. Here, we disclose a combined experimental and computational investigation of the mechanism of NAT from a Ru 2 nitride to the C–H bond of toluene. Computed kinetic isotope effects for a H-atom abstraction (HAA)/radical rebound (RR) mechanism are in good agreement with experimental data obtained for C–H amination at the rapid diffusion limit. These results provide the first detailed analysis of the mechanism of intermolecular NAT to a C–H bond, bolster the use of KIEs as a probe of confinement effects on NAT within MOF lattices, and provide mechanistic insights unavailable by experiment because rate-determining mass transport obscured the underlying chemical kinetics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Computational discovery of a novel double transition metal nitride MXene and its applications as an anchoring and catalytic material in Li–Se batteries

Double transition metal (DTM) nitride MXenes offer enhanced electrical conductivity and tunable catalytic properties compared to conventional carbide-based MXenes. In this study, we employed first-principles density functional theory (DFT) calculations to discover and computationally validate a novel DTM nitride MXene, Nb 2 TiN 2 , derived from its MAX phase precursor and investigated its potential as an anchoring material (AM) for Li–Se batteries. This newly proposed MXene expands the compositional landscape of DTM nitrides and opens new avenues for functional material design. We performed a comprehensive analysis of the thermodynamic and electronic properties of Nb 2 TiAlN 2 , and the MAX phase precursor to Nb 2 TiN 2 to assess its structural stability and exfoliation potential. Exfoliation energy calculations confirmed the feasibility of synthesizing Nb 2 TiN 2 from Nb 2 TiAlN 2 . We then explored the functionalized form, Nb 2 TiN 2 S 2 , evaluating its capability to serve as an effective anchoring material (AM) in Li–Se batteries by analyzing the reaction mechanisms and kinetics of the selenium reduction reaction (SeRR). Our results indicate that Nb 2 TiN 2 S 2 exhibits a strong binding affinity for lithium polyselenides (Li 2 Se n ), effectively suppressing the shuttle effect. Gibbs free energy calculations for the rate-limiting step of the SeRR reveal favorable kinetics and reduced reaction barriers. Overall, this study provides a detailed evaluation of the structural and electronic properties of a newly proposed DTM nitride MXene and its S-functionalized derivative and the catalyzing effect of Nb 2 TiN 2 S 2 in accelerating the reaction kinetics in Li–Se batteries. These findings underscore the potential importance of the further exploration of MXenes to address current challenges in high-performance Li–Se batteries.

25 ENERGY STORAGE↗

DOE OSTI2022

Solar-Thermal Ammonia Production Via a Nitride Looping Cycle [Slides]

Solar Thermal Ammonia Production has the potential to synthesize ammonia in a green, renewable process that can greatly reduce the carbon footprint left by conventional Haber-Bosch reaction. Ternary nitrides in the family A 3 B x N (A=Co, Ni, Fe; B=Mo; x=2,3) have been identified as a potential candidate for NH 3 production. Experiments with Co 3 Mo 3 N in Ammonia Synthesis Reactor demonstrate cyclable NH 3 production from bulk nitride under pure H 2 . Production rates were fairly flat in all the reduction steps with no evident dependence on the consumed solid-state nitrogen, as would be expected from catalytic Mars-van Krevelen mechanism. Material can be re-nitridized under pure N 2 . Bulk nitrogen per reduction step average between 25 – 40% of the total solid-state nitrogen. Selectivity to NH 3 stabilized at 55 – 60% per cycle. Production rates (NH 3 and N 2 ) become apparent above 600 °C at P(H 2 ) = 0.5 – 2 bar. Optimal point of operation to keep selectivity high without compromising NH 3 rates currently estimated at 650 °C and 1.5 - 2 bar. The next steps are to optimize production rates, examine effect of N 2 addition in NH 3 synthesis reaction, and test additional ternary nitrides.

14 SOLAR ENERGY↗

DOE OSTI2020

Nitride stabilized core/shell nanoparticles

Nitride stabilized metal (M or Pt(M)) nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2022

Preservation of strain in iron nitride magnet

A permanent magnet may include a Fe 16 N 2 phase in a strained state. In some examples, strain may be preserved within the permanent magnet by a technique that includes etching an iron nitride-containing workpiece including Fe 16 N 2 to introduce texture, straining the workpiece, and annealing the workpiece. In some examples, strain may be preserved within the permanent magnet by a technique that includes applying at a first temperature a layer of material to an iron nitride-containing workpiece including Fe 16 N 2 , and bringing the layer of material and the iron nitride-containing workpiece to a second temperature, where the material has a different coefficient of thermal expansion than the iron nitride-containing workpiece. A permanent magnet including an Fe 16 N 2 phase with preserved strain also is disclosed.

Wang, Jian-Ping↗

DOE OSTI2022

System and methods for fabricating boron nitride nanostructures

This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.

Fathalizadeh, Aidin↗

DOE OSTI2023

Preservation of strain in iron nitride magnet

Wang, Jian-Ping↗

DOE OSTI2025

Synthesis and Photodriven Hydrogenation of Tungsten Nitride Complexes Prepared from Dinitrogen Cleavage

Oxidation of the Chatt-type tungsten dinitrogen compound, trans-(depe) 2 W(N 2 ) 2 (depe = Et 2 PCH 2 CH 2 PEt 2 ), with [(η 5 -C 5 H 5 ) 2 Fe][BAr F 4 ] (BAr F 4 = B(3,5-(CF 3 ) 2 C 6 H 3 ) 4 ) resulted in isolation of [(depe) 2 WN][BAr F 4 ], a rare example of a tungsten(IV) nitride prepared from N 2 cleavage. A bimetallic μ-N 2 ditungsten intermediate supported by terminal N 2 ligands was identified, and irradiation with visible light promoted dinitrogen cleavage and formation of [(depe) 2 WN][BAr F 4 ]. Performing the analogous one-electron oxidation of the related tungsten dinitrogen compound, trans-(dppe) 2 W(N 2 ) 2 (dppe = Ph 2 PCH 2 CH 2 PPh 2 ), furnished the corresponding cationic, 17-electron tungsten dinitrogen complex, [(dppe) 2 W(N 2 ) 2 ][BAr F 4 ], that was characterized by X-ray diffraction and vibrational and EPR spectroscopies. The generation of [(dppe) 2 W(N)][BAr F 4 ] was observed in low yield from the in situ formed mixed N 2 -bridged compound, [(N 2 )(depe) 2 W(μ-N 2 )W(dppe) 2 (N 2 )][BAr F 4 ] 2 , and was confirmed by independent synthesis using 1-azidoadamantane. Addition of ammonia or water to [(depe) 2 WN][BAr F 4 ] resulted in formation of the cationic imide and hydroxide complexes, [(depe) 2 W(NH)(X)][BAr F 4 ] (X = NH 2 , OH). Irradiation of [(depe) 2 WN][BAr F 4 ] with 440 nm visible light in the presence of Ir(ppy) 3 (ppy = 2-phenylpyridine) under 4 atm of dihydrogen resulted in hydrogenation of the tungsten nitride to the cationic tungsten pentahydride, [(depe) 2 WH 5 ][BAr F 4 ], with the release of free ammonia in 21% yield, a rare example of ammonia generation from dinitrogen and dihydrogen from a well-defined tungsten nitride.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Basal Plane Hydrogen Evolution Activity from Mixed Metal Nitride MXenes Measured by Scanning Electrochemical Microscopy

2D early transition metal carbide and nitride MXenes have intriguing properties for electrochemical energy storage and electrocatalysis. These properties can be manipulated by modifying the basal plane chemistry. Here, mixed transition metal nitride MXenes, M-Ti 4 N 3 T x (M = V, Cr, Mo, or Mn; T x = O and/or OH), are developed by modifying pristine exfoliated Ti 4 N 3 T x MXene with V, Cr, Mo, and Mn salts using a simple solution-based method. The resulting mixed transition metal nitride MXenes contain 6–51% metal loading (cf. Ti) that exhibit rich electrochemistry including highly tunable hydrogen evolution reaction (HER) electrocatalytic activity in a 0.5 m H 2 SO 4 electrolyte as follows: V-Ti 4 N 3 T x > Cr-Ti 4 N 3 T x > Mo-Ti 4 N 3 T x > Mn-Ti 4 N 3 T x > pristine Ti 4 N 3 T x with overpotentials as low as 330 mV at -10 mA cm -2 with a charge-transfer resistance of 70 O. Scanning electrochemical microscopy (SECM) reveals the electrochemical activity of individual MXene flakes. The SECM data corroborate the bulk HER activity trend for M-Ti 4 N 3 T x as well as provide the first experimental evidence that HER results from catalysis on the MXene basal plane. These electrocatalytic results demonstrate a new pathway to tune the electrochemical properties of MXenes for water splitting and related electrochemical applications.

2D materials↗

DOE OSTI2025

Nanometer Resolution Structure‐Emission Correlation of Individual Quantum Emitters via Enhanced Cathodoluminescence in Twisted Hexagonal Boron Nitride

Understanding the atomic structure of quantum emitters, often originating from point defects or impuritie, is essential for designing and optimizing materials for quantum technologies such as quantum computing, communication, and sensing. Despite the availability of atomic-resolution scanning transmission electron microscopy and nanoscale cathodoluminescence microscopy, experimentally determining the atomic structure of individual emitters is challenging due to the conflicting needs for thick samples to generate strong cathodoluminescence signals and thin samples for structural analysis. To overcome this challenge, significantly enhanced cathodoluminescence at twisted interfaces is leveraged to achieve sub-nanometer localization precision for the first time in mapping individual quantum emitters in carbon-implanted hexagonal boron nitride. This unprecedent spatial sensitivity, together with correlative electron energy loss spectroscopy quantitative scanning transmission electron microscopy imaging, and first principles density functional theory calculations, enables the identification of the atomic structure of the 440 nm blue emitter in hexagonal boron nitride as a substituted vertical carbon dimer. Building on the atomic structure insights, nanoscale spatially precise creation of blue emitters is demonstrated by electron beam irradiation of carbon-coated hexagonal boron nitride. This advancement in correlating atomic structures with optical properties lays the foundation for a deeper understanding and precise engineering of quantum emitters, significantly advancing the development of cutting-edge quantum information technologies.

2D material↗

DOE OSTI2020

Transition Metal Nitrides as Promising Catalyst Supports for Tuning CO/H 2 Syngas Production from Electrochemical CO 2 Reduction

The electrochemical carbon dioxide reduction reaction (CO 2 RR) to produce synthesis gas (syngas) with tunable CO/H 2 ratios has been studied by supporting Pd catalysts on transition metal nitride (TMN) substrates. Combining experimental measurements and density functional theory (DFT) calculations, Pd-modified niobium nitride (Pd/NbN) is found to generate much higher CO and H 2 partial current densities and greater CO Faradaic efficiency than Pd-modified vanadium nitride (Pd/VN) and commercial Pd/C catalysts. In-situ X-ray diffraction identifies the formation of PdH in Pd/NbN and Pd/C under CO 2 RR conditions, whereas the Pd in Pd/VN is not fully transformed into the active PdH phase. DFT calculations show that the stabilized *HOCO and weakened *CO intermediates on PdH/NbN are critical to achieving higher CO 2 RR activity. This work suggests that NbN is a promising substrate to modify Pd, resulting in an enhanced electrochemical conversion of CO 2 to syngas with a potential reduction in precious metal loading.

25 ENERGY STORAGE↗

DOE OSTI2022

Oxides and Nitrides with Asymmetric Pore Structure from Block Copolymer Co–Assembly and Non–Solvent Induced Phase Separation

Materials combining an asymmetric pore structure with mesopores everywhere enable high surface area accessibility and fast transport, making them attractive for e.g., energy conversion and storage applications. Block copolymer (BCP)/inorganic precursor co-assembly combined with non-solvent induced phase separation (NIPS) provides a route to materials in which a mesoporous top surface layer merges into an asymmetric support with graded porosity along the film normal and mesopores throughout. Here, the co-assembly and non-solvent-induced phase separation (CNIPS) of poly(isoprene)-b-poly(styrene)-b-poly(4-vinylpyridine) (ISV) triblock terpolymer and titanium dioxide (TiO 2 ) sol-gel nanoparticlesare reported. Heat-treatment in air results in free-standing asymmetric porous TiO 2 . Further thermal processing in ammonia results in free-standing asymmetric porous titanium nitride (TiN). processing changes alter structural membrane characteristics is demonstrated. Changing the CNIPS evaporation time results in various membrane cross-sections ( finger-like to sponge-like). Further, oxide and nitride material composition, crystallinity, and porosity are tuned by varying thermal processing conditions. Finally, thermal processing condition effects are probed on phase-pure asymmetric nitride membrane behavior using cyclic voltammetry to elucidate their influence, e.g., on specific capacitance. Results provide further insights into improving asymmetric and porous materials for applications including energy conversion and storage, separation, and catalysis and motivate a further expansion of CNIPS to other (in)organic materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Interaction mechanism of transition metal phthalocyanines on transition metal nitride supports

Here, we investigated the electronic interactions between transition metal phthalocyanine (TMPc’s) on a refractory transition metal nitride support, specifically copper phthalocyanine (CuPc) on titanium nitride (TiN). X-ray Photoelectron Spectroscopy (XPS) results suggest a presence of a few nanometer native oxide layer on the surface of the TiN nanoparticles, which consists of TiN, TiO 2 , and Titanium oxynitrides (Ti x O y N z ). A TiNCuPc nanocomposite was synthesized via a simple mixing method due to the strong binding between CuPc and TiN confirmed by density functional theory (DFT) calculations. Both XPS data and DFT calculations revealed an electron transfer from TiN substrate to CuPc molecule. The nature of charge transfer is not influenced by the presence of an oxide layer on the surface of TiN. Substantial deviations are however found between photoelectron emission microscopy (PEEM) measured work function for TiN (4.68 eV) and theoretically calculated work function for pristine stoichiometric TiN (2.63 eV). This behavior is attributed to the presence of an oxide layer on the TiN surface. TiNCuPc composite system has a work function value between those of TiN and CuPc. Our studies open up an opportunity to apply a new class of materials based on transition metal phthalocyanine/transition metal nitride composites to catalysis and optoelectronic devices.

36 MATERIALS SCIENCE↗