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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics

Two-dimensional (2D) semiconductors are highly promising candidates for thin-film transistor applications due to their scalability, transferability, atomic thickness, and relatively high carrier mobility. However, a substantial performance gap remains between individual devices based on single-crystalline 2D films and wafer-scale integrated circuits, primarily due to defects introduced during conventional fabrication processes. Here, we report a diamond-assisted electrode transfer technique for the van der Waals integration of wafer-scale prefabricated electrode arrays onto 2D materials, enabling scalable electronics and optoelectronics. Implemented on metal–organic chemical vapor deposition-grown monolayer molybdenum disulfide, this method forms ultraclean metal–semiconductor interfaces, yielding field-effect transistors with excellent ohmic contacts, a low contact resistance of 400 Ω·μm, and a Schottky barrier height of only 9 meV. Furthermore, we demonstrate a scalable transistor array on monolayer molybdenum disulfide with excellent device performance uniformity, achieving an average field-effect mobility of 30 cm 2 V –1 s –1 and an on/off current ratio exceeding 105. Additionally, high photocurrent and responsivity were demonstrated in the array devices, showing their potential for excellent image detection. We further demonstrate the versatility of this technique by fabricating a Schottky diode array through a single-step transfer of asymmetric electrodes─low work function aluminum and high work function gold─onto monolayer tungsten diselenide. This approach provides a clean, effective solution for contact engineering in 2D materials, offering a viable pathway toward wafer-scale, high-performance 2D electronics, optoelectronics, and integrated circuits.

2D electronics↗
DOE OSTI2022

Core-level binding energy shifts between interior, terrace and edge atoms in MnO(001) thin films

Understanding the physical origin of core-level photoemission line shapes can offer valuable information about the chemical and physical properties of surfaces. For instance, in a large number of transition metals oxides, changes in the line shape allow the accurate determination of their oxidation states and cation site symmetry. Yet, despite this importance, experimental investigations on core-level shifts have been much neglected in recent years. In order to provide further evidence of the physical relevance, we have, in this contribution, introduced a new aspect of interior-, terrace- and edge- atom core-level binding energy shifts to describe monolayers of MnO(001) films grown on an Au(111) substrate. By this means we were able to distinguish the line shape contributions related to different types of atomic sites. Here we show that their relative intensities and energy shifts are able to provide information about the relative amount of under coordinated atoms on the surface and, thus give insights into their catalytic properties. Our findings reveal the importance of a detailed surface science characterization to provide the correct interpretation of distinct photoemission line shapes when considering thin film samples as well as nanostructures in general.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Growth of Low-Defect WSe 2 Film via High-Purity van der Waals Crystal Precursor

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) exhibit exceptional electrical and optical properties, empowering their promising prospects for future nanoelectronics. Despite major advances in n-type 2D semiconductors, the field has yet to synthesize high-mobility p-type 2D TMDs, in particular WSe 2 , and systematically query the influence of defects. In this study, we unveil the pivotal role of substitutional impurity defects vis-à-vis the precursor used and growth method employed in defining the quality of 2D p-type WSe 2 . Density functional theory calculations suggest the adverse effect of Fe-, Co-, Ni- and Si-substituted W impurity defects on the mobility of WSe 2 , whereas defects such as O-, S-substituted Se and Mo-substituted W pose negligible impact. Guided by the theory, we pinpoint van der Waals (vdW) crystals, commonly used in mechanical exfoliation, as the optimal precursor, and develop a facile vdW crystal physical vapor deposition (PVD) method to grow high-purity monolayer 2D WSe 2 film (VPVD-WSe 2 ) that is continuous across a centimeter scale. A suite of spectroscopies confirms the markedly reduced defect density of the as-synthesized WSe 2 compared to those by typical chemical vapor deposition methods, and by PVD with commercial or hydrothermal precursors. Scanning tunneling microscopy further evidence the ultralow substitutional impurity defect density of VPVD-WSe 2 , greatly outperforming the control samples and approaching the mechanically exfoliated counterparts. The VPVD-WSe 2 based field-effect transistors exhibit notable electrical performance with record-high field-effect hole mobility up to 112 cm 2 V –1 s –1 at room temperature, exceeding the best-reported monolayer WSe 2 synthesized by chemical vapor deposition and rivaling the mechanically exfoliated 2D WSe 2 flakes.

WSe2↗
DOE OSTI2021

Growth and Development of Quantum Materials

Topological insulators (TIs) display a new state of quantum matter, which is broadly known as quantum materials. The TIs have a unique property of being an insulator as a bulk property and having conducting surface states, which are symmetry-protected Dirac Fermions and well isolated from the bulk valence and conduction bands. Ideally, these topological surface states and bulk electronic states should act independently. The degree to which they intermix depends on the crystalline quality, composition and defects present in the material. These materials thus demand very high-quality crystals to observe the desired quantum properties. We proposed growth of high-quality single crystals and thin films to enhance the ability to fabricate devices with unique performance attributes. Two separate approaches will be made to make the thin films, one is exfoliation of 2D monolayer from the grown single crystals and the second is thin films grown by pulsed laser deposition. Both techniques will subsequently allow for fabrication of meso structures using a Focused Ion Beam technique.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Cyclic Topology Enhancing Structural Ordering and Stability of Comb-Shaped Polypeptoid Thin Films against Melt-Induced Dewetting

We investigated the effect of cyclic chain topology on the molecular ordering and thermal stability of comb-shaped polypeptoid thin films on silicon (Si) substrates. Cyclic and linear poly(N-decylglycine) (PNDG) bearing long n-decyl side chains were synthesized by ring-opening polymerization of N-decylglycine-derived N-carboxyanhydrides. When the spin-coated thin films were subjected to thermal annealing at temperatures above the melting temperature (T > T m ), the cyclic PNDG films exhibited significantly enhanced stability against melt-induced dewetting than the linear counterparts (l-PNDG). When recrystallized at temperatures below the crystallization temperature (T < T c ), the homogeneous c-PNDG films exhibit enhanced crystalline ordering relative to the macroscopically dewetted l-PNDG films. Both cyclic and linear PNDG molecules adopt cis-amide conformations in the crystalline film, which transition into trans-amide conformations upon melting. A top-down solvent leaching treatment of both l/c-PNDG films revealed the formation of an irreversibly physisorbed monolayer with similar thickness (ca. 3 nm) on the Si substrate. The physisorbed monolayers are more disordered relative to the respective thicker crystalline films for both cyclic and linear PNDGs. Upon heating above T m , the adsorbed c-PNDG chains adopt trans-amide backbone conformation identical with the free c-PNDG molecules in the molten film. By contrast, the backbone conformations of l-PNDG chains in the adsorbed layers are notably different from those of the free chains in the molten film. We postulate that the conformational disparity between the chains in the physically adsorbed layers versus the free chains in the molten film is an important factor to account for the difference in the thermal stability of PNDG thin films. These findings highlight the use of cyclic chain topology to suppress the melt-induced dewetting in polymer thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Potential-Controlled Deposition of Multilayer CO 2 Reduction Catalyst Films onto Silicon Photoelectrodes Demonstrates Thickness-Dependent Catalytic Rates

Covalently attaching molecular catalysts to semiconductor surfaces yields promising hybrid photoelectrode architectures for reducing CO 2 to higher-value carbon products. Polymeric molecular catalyst films have higher loading densities than their monolayer counterparts, promising greater rates of solar fuel production. Using photoassisted diazonium electrografting, multilayered films of a Re(apbpy)(CO) 3 Cl CO 2 -reduction catalyst were attached to low-doped p-type Si (pSi). Parallel characterization of the newly formed films with ellipsometry, XPS, and ICP-MS revealed that catalyst loading increased with increasingly negative applied grafting potentials (Vgraft), providing us an experimental test bed to study the effects of film thickness on photocatalytic performance. Controlled-potential electrolysis experiments showed enhanced CO evolution rates on all photoelectrodes with increasingly negative applied potentials (V app ), with thicker films exhibiting the greatest rates of enhancement. Competitive proton reduction reactions at the Si surface were not strongly linked to V app but dependent on film thickness, with thicker films showing increased CO-to-H 2 production ratios.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Correlating structural, electronic, and magnetic properties of epitaxial VSe 2 thin films

The electronic and magnetic properties of transition metal dichalcogenides are known to be extremely sensitive to their structure. In this paper we study the effect of structure on the electronic and magnetic properties of mono- and bilayer VSe 2 films grown using molecular beam epitaxy. VSe 2 has recently attracted much attention due to reports of emergent ferromagnetism in the two-dimensional (2D) limit. To understand this compound, high-quality 1$\textit{T}$ and distorted 1$\textit{T}$ films were grown at temperatures of 200 °C and 450 °C, respectively, and studied using 4 K scanning tunneling microscopy and spectroscopy. The measured density of states and the charge density wave (CDW) patterns were compared to band structure and phonon dispersion calculations. Films in the 1$\textit{T}$ phase reveal different CDW patterns in the first layer compared to the second. Interestingly, we find the second layer of the 1$\textit{T}$ film shows a CDW pattern with 4$\textit{a}$ × 4$\textit{a}$ periodicity which is the 2D version of the bulk CDW observed in this compound. We report our phonon dispersion calculations confirm the presence of a soft phonon at the correct wave vector that leads to this CDW. In contrast, the first layer of distorted 1$\textit{T}$ phase films shows a strong stripe feature with varying periodicities, while the second layer displays no observable CDW pattern. Finally, we find that the monolayer 1$\textit{T}$ VSe 2 film is weakly ferromagnetic, with ~3.5 $μ_B$ per unit similar to previous reports.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Impact of Grafting Density on the Assembly and Mechanical Properties of Self-Assembled Metal–Organic Framework Monolayers

Polymer-grafted metal–organic frameworks (MOFs) can be used to form free-standing self-assembled MOF monolayers (SAMMs). Polymer chains can be introduced onto MOF surfaces through either the ligands or metal nodes using both grafting-to and grafting-from approaches. However, controlling the grafting density of polymer-grafted MOFs has not yet been achieved, because a means to control the density of grafting sites on the MOF surface has not been developed. In this study, the grafting density of polymer-grafted UiO-66 (UiO = University of Oslo) was controlled by functionalizing a portion of the Zr(IV) secondary building units (SBUs) on a UiO-66 surface with a so-called blocking agent. The remaining sites on the UiO-66 SBUs were functionalized with polymerization initiation groups, and polymers were grown from these sites to obtain particles with variable grafting densities and chain lengths that form SAMMs at an air–water interface. Even under conditions of low grafting density, these materials retain the ability to form SAMMs and their free-standing ability. Changes in particle arrangement within the monolayers were investigated using SEM imaging, and the toughness of the monolayers was evaluated using a film-on-water (FOW) method. Furthermore, coarse-grained molecular dynamics simulations were carried out to elucidate the morphology and mechanical properties of the monolayers. Findings from both experiments and simulations indicate that the toughness of SAMMs is more heavily influenced by the chain length of the grafted polymers than by the overall polymer content in the composite.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Control of ternary alloy composition during remote epitaxy on graphene

Understanding the sticking coefficient σ, i.e., the probability of an adatom sticking to a surface, is essential for controlling the stoichiometry during epitaxial film growth. However, σ on monolayer graphene-covered surfaces and its impact on remote epitaxy are not understood. Here, using molecular-beam epitaxial growth of the magnetic shape memory alloy Ni 2 MnGa, we show that the sticking coefficients for metals on graphene-covered MgO (001) are less than one and are temperature and element dependent, as revealed by ion backscattering spectrometry and energy-dispersive x-ray spectroscopy. This lies in stark contrast with most transition metals sticking on semiconductor and oxide substrates, for which σ is near unity at typical growth temperatures (T < 800°C). By initiating growth below 400°C, where the sticking coefficients are closer to unity and wetting on the graphene surface is improved, we demonstrate the epitaxy of Ni 2 MnGa films with controlled stoichiometry that can be exfoliated to produce freestanding membranes. Straining these membranes tunes the magnetic coercive field. Finally, our results provide a route to synthesize membranes with complex stoichiometries whose properties can be manipulated via strain.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Decagonal Sn clathrate on d-Al-Ni-Co

Decagonal quasiperiodic ordering of Sn thin films on d-Al-Ni-Co is shown based on scanning tunneling microscopy (STM), low-energy electron diffraction, and density functional theory (DFT). Interestingly, the decagonal structural correlations are partially retained even up to a large film thickness of 10 nm grown at 165±10K. The nucleation centers called “Sn white flowers” identified by STM at submonolayer thickness are recognized as valid patches of the decagonal clathrate structure with low adsorption energies of these motifs. Due to the excellent lattice matching (to within 1%) between columns of Sn dodecahedra in the clathrate structure and pentagonal motifs at the d-Al-Ni-Co surface, the interfacial energy favors clathrate over the competing Sn crystalline forms. DFT study of the Sn/Al-Ni-Co composite model shows good mechanical stability, as shown by the work of separation of Sn from Al-Ni-Co slab that is comparable to the clathrate self-separation energy. Finally, the relaxed surface terminations of the R 2 T 4 clathrate approximant are in self-similarity correspondence with the motifs observed in the STM images from monolayer to the thickest Sn film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Platinum and Gold Supported on Transition Metal Nitrides for Hydrogen Evolution in an Alkaline Electrolyte

Here, as the urgency to reduce reliance on fossil fuels increases due to carbon dioxide emissions, hydrogen produced by renewably powered water electrolysis has emerged as a promising technology. Alkaline electrolyzers typically exhibit lower current densities than acidic electrolyzers due to the slow kinetics of the hydrogen evolution reaction (HER) under alkaline conditions. This work developed Pt- and Au-modified transition metal nitride (TMN) thin films for improving alkaline HER kinetics. One monolayer Pt–VN, Pt–Mo 2 N, and Pt–TiN were the most promising thin-film catalysts, with alkaline HER activity approaching that of a bulk Pt foil. Additionally, the Gibbs free energy of adsorbed hydrogen was identified as a useful descriptor for alkaline HER activity on TMN and TMN-supported catalysts and has the potential to guide future studies on TMN-based catalysts for enhancing alkaline HER. For practical applications, the thin-film catalysts were then extended to Pt- and Au-modified TMN powders for alkaline HER. Both 5 wt % Pt/TiN and 2 wt % Pt/TiN powders exhibited lower overpotentials at 5 mA/cm 2 when normalized by the Pt electrochemical surface area than the commercial 5 wt % Pt/C benchmark, suggesting a Pt–TiN synergy that creates opportunities for more cost-effective alkaline HER cathodes. Moreover, 20 wt % Au/Mo 2 N also displayed an enhancement in HER activity when compared to the commercial 20 wt % Au/C benchmark.

58 GEOSCIENCES↗
DOE OSTI2025

Manipulating Excitonic Quantum Droplets in Two-Dimensional CdSe Nanoplatelets via Thickness and Core/Shell Morphology

Recently, photoexcitation of high-density 4 or 5 monolayer (ML) thick CdSe nanoplatelet films at temperatures below ~200K was observed to produce pump-intensitydependent, superlinear, progressively red-shifted light output due to amplified spontaneous emission (ASE) from polyexcitonic species, distinct from biexcitonic ASE. These polyexcitonic species comprise Coulombically bound multiexciton states, termed “quantum droplets”, that form when multiexciton binding energy exceeds thermal energy fluctuations. In this work, we investigate thinner samples as well as core/shell nanoplatelet films and find that the 3 ML sample supports quantum droplet ASE up to higher temperatures than the 4 or 5 ML whereas core/shell structures suppress this form of ASE even at very low sample temperatures despite observable biexcitonic ASE, suggesting that the reduced or repulsive Coulomb binding energy of multiple excitons suppresses quantum droplets. These findings help to add understanding of routes to harness quantum droplet optical nonlinearities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Monolayer Vanadium‐Doped Tungsten Disulfide: A Room‐Temperature Dilute Magnetic Semiconductor

Abstract Dilute magnetic semiconductors (DMS), achieved through substitutional doping of spin‐polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto–electric or magneto–optical devices, especially for two‐dimensional (2D) systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room‐temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels without dopant aggregation. Here, room‐temperature ferromagnetic order obtained in semiconducting vanadium‐doped tungsten disulfide monolayers produced by a reliable single‐step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation, is described. These monolayers develop p‐type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of ~2 at% and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium–vanadium spacings, as supported by transmission electron microscopy, magnetometry, and first‐principles calculations. Room‐temperature 2D‐DMS provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures into the realm of practical application.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Structural Changes in Films of Pulmonary Surfactant Induced by Surfactant Vesicles

When compressed by the shrinking alveolar surface area during exhalation, films of pulmonary surfactant in situ reduce surface tension to levels, at which surfactant monolayers collapse from the surface in vitro. Vesicles of pulmonary surfactant added below these monolayers slow collapse. X-ray scattering here determined the structural changes that improve stability. Grazing incidence X-ray diffraction on monolayers of extracted calf surfactant detected an ordered phase. Mixtures of dipalmitoyl phosphatidylcholine and cholesterol, but not the phospholipid alone, mimic that structure. At concentrations that stabilize the monolayers, vesicles in the subphase had no effect on the unit cell, and the film remained monomolecular. The added vesicles, however, produced a concentration-dependent increase in the diffracted intensity. These results suggest that the enhanced resistance to collapse results from components of an ordered interfacial phase which partition from subphase to the surface, increasing the area of the ordered structure.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2025

Nanoscale Editing of Multi and Single Layer Tungsten Disulfide via Gas‐Assisted Focused Electron Beam Induced Etching for Device Prototyping

Focused electron beam induced etching (FEBIE) with XeF 2 (xenon difluoride) precursor is conducted on multi-layer exfoliated WS 2 (tungsten disulfide) and monolayer WS 2 grown by chemical vapor deposition (CVD). The films are characterized by atomic force microscopy (AFM) and Raman and photoluminescence (PL) spectroscopy post-etching. The etch rates/efficiencies are reported as a function of electron beam energy, current, dwell time, and XeF 2 pressure. Bulk film Raman spectra are unchanged post-FEBIE, indicating minimal subsurface damage. Monolayer WS 2 shows a decrease in Raman and PL intensity post-FEBIE, with a dose-to-clear of ≈2 nC µm −2 . The study reveals regimes affected by the various mass transport contributions such as refresh time and the ratio of electrons/XeF 2 . Spontaneous etching was discovered during FEBIE of large patterned areas due to the long frame/refresh times. Density functional theory and ab initio molecular dynamics simulations compares desorption of SF x and WF x molecules from pristine WS 2 basal planes and pore edges, revealing the spontaneous etching is consistent with etching of partially etched monolayers during each frame. Single-line etching width of 21 nm, and patterning flakes into 100 nm wide channels are demonstrated. In conclusion, this work demonstrates the possibility of editing WS 2 flakes into electronic devices of arbitrary dimensions for semiconductor applications.

2D materials↗
DOE OSTI2022

Proximity enhanced magnetism at NiFe 2 O 4 /Graphene interface

Here, we explore the change in effective magnetic anisotropy of the ferrimagnetic (FM) insulator nickel ferrite (NFO) thin film due to the inclusion of monolayer graphene (MLG) grown on top of the NFO layer. This was done by performing radio frequency (RF) transverse susceptibility (TS) measurements on bare NFO and NFO/MLG bilayer samples for both in-plane (IP) and out-of-plane (OOP) configurations utilizing a tunnel diode oscillator technique. Our magnetometry measurements indicated an enhancement in the overall saturation magnetization of the NFO/MLG bilayer with respect to the bare NFO film. The TS measurements reveal that the inclusion of MLG reduces the effective magnetic anisotropy for both IP and OOP configurations drastically, by up to a factor of 2 over the temperature range 40 K ≤ T ≤ 280 K. Since NFO is a magnetic substrate, it is possible that NFO could induce magnetic ordering in MLG at the NFO/MLG interface via the magnetic proximity effect. Furthermore, since NFO is insulating and MLG is a semimetal, there likely exists a large conductivity difference at the interface, making charge transfer plausible. These two effects could modify the interfacial magnetism leading to a change in the effective magnetic anisotropy. These results highlight the importance of understanding the interfacial magnetism of FM/MLG heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Patterned, Low-Temperature Growth of Transition Metal Dichalcogenides for Low Resistance Raised Contacts

Transition metal dichalcogenide (TMD) monolayers are promising channel materials for next-generation electronic devices. A challenge is the high contact resistance between monolayer TMDs and metal contacts, especially for holes. Here, in this regard, raised source/drain contacts are promising. However, the direct, patterned growth of raised contacts at CMOS-compatible temperatures remains largely unresolved. We present plasma-free selenization and sulfurization of metal oxides at substrate temperatures down to 400 °C, compatible with back-end-of-line thermal budgets. To achieve growth at such temperatures, gas-phase chalcogen precursors are first thermally activated at 950 °C. Films grown on single-crystal monolayer TMDs exhibit high crystal quality, as confirmed by transmission electron microscopy. Raised contacts on WSe 2 monolayers fabricated using this approach yield a low hole contact resistance of 0.3 kΩ·μm after chemical doping. This process is shown to be applicable to growing various TMDs, including WS 2 , MoSe 2 , MoS 2 , PtSe 2 , and NbS 2 .

contact engineering↗