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Antenna is circularly-polarized microwave device with high-band frequency and low-band frequency elements. Relatively low impedance of low-band frequency element can be matched to desired impedance by adding etched matching network.
Serial minimum-shift keyed (MSK) modulation, a technique for generating and detecting MSK using series filtering, is ideally suited for high data rate applications provided the required conversion and matched filters can be closely approximated. Low-pass implementations of these filters as parallel inphase- and quadrature-mixer structures are characterized in this paper in terms of signal-to-noise ratio (SNR) degradation from ideal and envelope deviation. Several hardware implementation techniques utilizing microwave devices or lumped elements are presented. Optimization of parameter values results in realizations whose SNR degradation is less than 0.5 dB at error probabilities of .000001.
It has been recognized from the onset that high temperature superconductivity held great promise for major advances across a broad range of NASA interests. The current effort is organized around four key areas: communications and data, sensors and cryogenics, propulsion and power, and space materials technology. Recently, laser ablated YBa2Cu3O(7-x) films on LaAIO produced far superior RF characteristics when compared to metallic films on the same substrate. This achievement has enabled a number of unique microwave device applications, such as low insertion loss phase shifters and high Q filters. Melt texturing and melt quenched techniques are being used to produce bulk materials with optimized magnetic properties. These yttrium enriched materials possess enhanced flux pinning characteristics and will lead to prototype cryocooler bearings. Significant progress has also occurred in bolometer and current lead technology. Studies are being conducted to evaluate the effect of high temperature superconducting materials on the performance and life of high power magneto-plasma-dynamic thrusters. Extended studies were also performed to evaluate the benefit of superconducting magnetic energy storage for LEO space station, lunar and Mars mission applications. The project direction and level of effort of the program are also described.
Superconducting films of YBa(2)Cu(3)O(7-delta), having high superconducting-transition temperatures (Tc's), deposited on LaAlO3 substrates and etched into patterns representative of passive microwave devices, with no deterioration of superconducting properties.
Current research in the area of high temperature superconductivity is organized around four key areas: communications and data, sensors and cryogenics, propulsion and power, and space materials technology. Recently, laser ablated YBa2Cu3O(7-x) films on LaAlO3 produced far superior RF characteristics when compared to metallic films on the same substrate. The achievement has enabled a number of unique microwave device applications, such as low insertion loss phase shifters and high-Q filters. Melt texturing and melt-quenched techniques are being used to produce bulk material with optimized magnetic properties. These yttrium-enriched materials possess enhanced flux pinning characteristics and could lead to prototype cryocooler bearings. Significant progress has also occurred in bolometer and current lead technology. Studies were conducted to evaluate the effect of high temperature superconducting materials on the performance and life of high power magnetoplasma-dynamic thrusters. Extended studies were also performed to evaluate the benefit of superconducting magnetic energy storage for LEO space station, lunar, and Mars mission applications.
Microwave conductivities of thin films of high-temperature superconductors like YBa(3)Cu(3)O(7-delta) measured by noninvasive, nondestructive microwave-power-transmission method. Measurements yield useful information on superconducting and normal states of films and contribute to evaluation of films for use in microwave devices.
The Systems Integration, Test, and Evaluation (SITE) Project at NASA LeRC encompasses a number of research and technology areas of satellite communications systems. Phase 1 of this project established a complete satellite link simulator system. The evaluation of proof-of-concept microwave devices, radiofrequency (RF) and bit-error-rate (BER) testing of hardware, testing of remote airlinks, and other tests were performed as part of this first testing phase. This final report covers the test results produced in phase 1 of the SITE Project. The data presented include 20-GHz high-power-amplifier testing, 30-GHz low-noise-receiver testing, amplitude equalization, transponder baseline testing, switch matrix tests, and continuous-wave and modulated interference tests. The report also presents the methods used to measure the RF and BER performance of the complete system. Correlations of the RF and BER data are summarized to note the effects of the RF responses on the BER.
The deposition of thin films of superconducting YBa2Cu3O7-x onto substrates of up to 3-in diameter by an integrated off-axis sputtering is reported. The substrate is located above the center of an 8-in-diameter YBCO planar target, and, in conjunction with a negative ion shield, negative ion effects are avoided. A large radiant heater provides backside, noncontact heating of the bare substrates. YBCO films have been grown on polished 1-cm2 MgO and LaAlO3 substrates with Tc = 90 K or greater, Jc = 2.5 x 10 exp 6 A/sq cm or greater at 77 K, and microwave surface resistance Rs less than 0.4 micro-ohm at 77 K and 10 GHz. The films have a very smooth surface morphology. Uniformity data for LaAlO3 substrates are less than +/-5 percent in Rs. Thickness uniformity results for 3-in substrates indicate less than 10 percent variation. The growth of epitaxial insulating films for use with YBCO films and application of the YBCO films in microwave devices are briefly discussed.
Crystals are integral components in some of our most sophisticated and rapidly developing industries. Single crystals are solids with the most uniform structures that can be obtained on an atomic scale. Because of their structural uniformity, crystals can transmit acoustic and electromagnetic waves and charged particles with essentially no scattering or interferences. This transparency, which can be selectively modified by controlled additions of impurities known as dopants, is the foundation of modern electronic industry. It has brought about widespread application of crystals in transistors, lasers, microwave devices, infrared detectors, magnetic memory devices, and many other magnets and electro-optic components. The performance of a crystal depends strongly on its compositional homogeneity. For instance, in modern microcircuitry, compositional variations of a few percent (down to a submicron length scale) can seriously jeopardize predicted yields. Since crystals are grown by carefully controlled phase transformations, the compositional adjustment in the solid is often made during growth from the nutrient. Hence, a detailed understanding of mass transfer in the nutrient is essential. Moreover, since mass transfer is often the slowest process during growth, it is usually the rate limiting mechanism. Crystal growth processes are usually classified according to the nature of the parent phase. Nevertheless, whether the growth occurs by solidification from a melt (melt growth), nucleation from a solution (solution growth), condensation from a vapor (physical vapor transport) or chemical reaction of gases (chemical vapor deposition), the parent phase is a fluid. As is with most non-equilibrium processes involving fluids, liquid or vapor, fluid motion plays an important role, affecting both the concentration and temperature gradients at the soli-liquid interface.
We have demonstrated a high power intermodulation measurement set-up capable of delivering 30 W in each of two fundamental tones. For closely spaced frequencies (less than 35 MHz), the dynamic range of the measurement is limited by the nonlinear performance of the mixer in the front end of the HP71210C spectrum analyzer. A tunable TE(sub 011) mode copper cavity was fabricated in which one of the endwalls could be adjusted shifting its resonant frequency between 5.7 and 6.6 GHz. Since the Q-value of this cavity is high, greater than 10(exp 4), and its bandwidth is small, less than 1 MHz, it can be used to attenuate the two fundamental tones relative to one of the harmonic tones, which greatly enhances the dynamic range of the measurement. This set-up can be used to measure the two-tone intermodulation distortion of any passive microwave device, e.g. a HTS filter, a connector, a cable, etc., over a frequency range of 5.9 to 6.4 GHz and a power range of 0.1 to 30 W. The third order intercept (TOI) of a prototype HTS filter measured at powers up to 30 W was +81.3 dBm.
The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable micro-wave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg at 18 GHz and a figure of merit of 74.3 deg/dB). Issues of post-annealing, Mn-doping and Ba(x)Sr(1-x) TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.
Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).
A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).
Ferrite materials are used in microwave devices that exploit the property of Faraday rotation to give non-reciprocal behavior. Examples of common waveguide components that use ferrite materials include circulators, isolators and gyrators.
An improved process for the fabrication of random arrays of silicon nanotips has been demonstrated to be feasible. Relative to other such processes, this process offers advantages of low cost and simplicity. Moreover, this process can readily be combined with other processes used to fabricate integrated circuits and other monolithic silicon structures. Arrays of silicon nanotips are subjects of research and development efforts directed toward utilizing them as field emitters in flat-panel displays, vacuum microelectronics, and microwave devices. Other silicon-nanotip-fabrication processes developed thus far predominantly include lithography, etching, and/or elaborate deposition steps followed by oxide sharpening steps and are both process intensive as well as expensive. In addition to being cheaper and simpler, the present process can efficiently produce silicon nanotips that range in height from a few microns to several tens of microns and are distributed over large areas. The process mentioned here can be summarized as consisting of (1) the growth of micro-etch masks on a silicon substrate, followed by (2) etching away of the masks, along with some of the substrate, to make an array of sharp tips. In the first step of the process, a cleaned silicon substrate is subjected to reactive ion etching (RIE) in a certain mixture of oxygen and carbon tetrafluoride under radio-frequency excitation. This process step results in the growth of fluorine based compounds in the form of stumps randomly distributed on the substrate. These stumps are known in the art as polymer RIE grass. The dimensions of these stumps are of the order of hundreds of nanometers, the exact values depending on process time and gas composition. The areal density of the stumps decreases with increasing process time as they grow and merge with neighboring stumps. These stumps constitute the micro-etch masks for the next step of the process. In the second step of the process, the substrate covered with the microetch masks is subjected to deep reactive ion etching (DRIE) process, which consists of cycles of reactive ion etching alternating with passivation (the Bosch process). The gas used in the etching substeps is sulfur hexafluoride (SF6); the gas used in the passivation substeps is octafluorocyclobutane (C4F8). The portions of the substrate directly under the RIE grass stubs are etched more slowly than are the portions between the stubs. Hence, what remains at the end of the process, after the stubs and parts of the substrate have been etched away, are silicon spikes where the stubs were (see figure). In a variation of the process, one starts with a silicon or silicon-on-insulator substrate with the intent to etch through the full thickness of the substrate. That is to say, one chooses the thickness so that the DRIE step releases individual nanotips. Such individual silicon nanotips may have utility as microscopic probes in biomedical applications.
Topics covered include: Using Diffusion Bonding in Making Piezoelectric Actuators; Wireless Temperature-Monitoring System; Analog Binaural Circuits for Detecting and Locating Leaks; Mirrors Containing Biomimetic Shape-Control Actuators; Surface-Micromachined Planar Arrays of Thermopiles; Cascade Back-Propagation Learning in Neural Networks; Perovskite Superlattices as Tunable Microwave Devices; Rollable Thin-Shell Nanolaminate Mirrors; Flight Tests of a Ministick Controller in an F/A-18 Airplane; Piezoelectrically Actuated Shutter for High Vacuum; Bio-Inspired Engineering of Exploration Systems; Microscope Cells Containing Multiple Micromachined Wells; Electrophoretic Deposition for Fabricating Microbatteries; Integrated Arrays of Ion-Sensitive Electrodes; Model of Fluidized Bed Containing Reacting Solids and Gases; Membrane Mirrors With Bimorph Shape Actuators; Using Fractional Clock-Period Delays in Telemetry Arraying; Developing Generic Software for Spacecraft Avionics; Numerical Study of Pyrolysis of Biomass in Fluidized Beds; and Assessment of Models of Chemically Reacting Granular Flows.
The feasibility of using microwave power to thermally regenerate sorbents loaded with water vapor, CO2, and organic contaminants has been rigorously demonstrated. Sorbents challenged with air containing 0.5% CO2, 300 ppm acetone, 50 ppm trichloroethylene, and saturated with water vapor have been regenerated, singly and in combination. Microwave transmission, reflection, and phase shift has also been determined for a variety of sorbents over the frequency range between 1.3-2.7 GHz. This innovative technology offers the potential for significant energy savings in comparison to current resistive heating methods because energy is absorbed directly by the material to be heated. Conductive, convective and radiative losses are minimized. Extremely rapid heating is also possible, i.e., 1400 C in less than 60 seconds. Microwave powered thermal desorption is directly applicable to the needs of Advance Life Support in general, and of EVA in particular. Additionally, the applicability of two specific commercial applications arising from this technology have been demonstrated: the recovery for re-use of acetone (and similar solvents) from industrial waste streams using a carbon based molecular sieve; and the separation and destruction of trichloroethylene using ZSM-5 synthetic zeolite catalyst, a predominant halocarbon environmental contaminant. Based upon these results, Phase II development is strongly recommended.
Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.