Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “memory controller”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Unveiling the nature of Ga-based chalcogenides for electrical switching selectors

Three-dimensional phase-change memory with stackable crossbar architecture is a promising technology to meet the urgent demands for high-density storage and rapid information processing in the era of explosive data growth. The performance depends strongly on the properties of ovonic threshold switching (OTS) selectors, which control the on/off states of memory units. Amorphous GaS serves as an outstanding OTS material, distinguished by its sizable mobility gap and high crystallization temperature, while the underlying mechanism continues to be inadequately comprehended. Here, in this work, we systematically studied the structural and electronic properties of amorphous Ga-X (X = S/Se/Te) using first-principles calculations. The results show that Ga atoms adopt tetrahedral motifs, while S/Se/Te atoms predominantly exhibit the structure of a distorted triangular pyramid. This structural arrangement is ascribed to the substantial dative bonds formed by the lone-pair electrons of the anions and the vacant sp3 orbitals around Ga atoms. Large mobility gaps (e.g., GaS: 2.43 eV, GaSe: 1.76 eV, GaTe: 1.26 eV) and distinct mid-gap states (e.g., ∼0.66 eV above valence band tail) ensure that these three chalcogenide glasses can be switched on under an external electric field while effectively suppressing leakage current without a bias, and the defect electronic states originate from short, robust Ga-Ga bonds due to the formation of distorted chain-like local structures. Our research elucidates the mechanisms of amorphous Ga-X as OTS materials, enriching the spectrum of electrical switching selectors by incorporating III-VI chalcogenides. This inclusion offers novel opportunities for the refinement and optimization of high-density integrated memory systems.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Persistence length regulates emergent dynamics in active roller ensembles

Active colloidal fluids, biological and synthetic, often demonstrate complex self-organization and the emergence of collective behavior. Spontaneous formation of multiple vortices has been recently observed in a variety of active matter systems, however, the generation and tunability of the active vortices not controlled by geometrical confinement remain challenging. Here, we exploit the persistence length of individual particles in ensembles of active rollers to tune the formation of vortices and to orchestrate their characteristic sizes. We use two systems and employ two different approaches exploiting shape anisotropy or polarization memory of individual units for control of the persistence length. We characterize the dynamics of emergent multi-vortex states and reveal a direct link between the behavior of the persistence length and properties of the emergent vortices. We further demonstrate common features between the two systems including anti-ferromagnetic ordering of the neighboring vortices and active turbulent behavior with a characteristic energy cascade in the particles velocity field energy spectra. Finally, our findings provide insights into the onset of spatiotemporal coherence in active roller systems and suggest a control knob for manipulation of dynamic self-assembly in active colloidal ensembles.

42 ENGINEERING↗
DOE OSTI2023

GOAT. jl

SF-23-008 This project is a Julia implementation of the Gradient Optimization of Analytic conTrols (GOAT) optimal control methodology. It integrates with other packages in Julia's ecosystem to provide memory-efficient, parallelized solutions to quantum optimal control tasks. A prototype implementation of some of these algorithms was initially developed and funded by the ASCR Early Career Research Award program under PI Travis Humble at Oak Ridge National Laboratory. The current version was funded under the ASCR AIDE-QC Program under PI Paul Hovland. The current package to be released has a novel implementation, syntax, and structure making it substantially different than the original prototype (which was not released under copyright to the best of my knowledge).

KAIRYS, PAUL↗
DOE OSTI2022

Smart material based multilayered microbeam structures for spatial self-deployment and reconfiguration: A residual stress approach

Alleviation of the potentially damaging effects induced by residual stresses was comprehensively investigated in previous research. Here, this paper, however, presents a spatially self-deployable and reconfigurable multilayered microbeam which takes advantage of residual stresses and shape memory effects. Reconfigurable mechanism of a typical four-layered microbeam composed of Pt\Ni 50 Ti 50 \Ni 50 Ti 50 \Pt is introduced, followed by analytical modeling of the maximum distance of the self-deployed gap as functions of variable structural and material parameters, including compressive residual stress in Pt layers and tensile residual stress in Ni 50 Ti 50 layers. Analytical solutions given by the static model agree well with the results obtained via finite element models (FEMs). Fabrication, characterization, and in-situ experiments were carried out to validate the feasibility of deployment of the as-released four-layered microbeam. The maximum distance of the gap was measured to be 41.39 μm at 20 °C, which could be increased to 51.73 μm thanks to controllable reconfiguration driven by shape memory effects. Theoretical analysis of such self-deployment and reconfiguration suggested a tensile residual stress increase by 52 MPa in Ni 50 Ti 50 layers. The multilayered microbeam structure with capabilities of self-deployment and reconfiguration offers great potential for various emerging applications, such as micro robotics, medical drug delivery devices, and intelligent chip scale spacecraft.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Artificial spin ice phase-change memory resistors

Abstract We present a proposal for realization of an electrical memory reminiscent of a memristor in connected Kagome artificial spin ice. We show that current flowing through the system alters the magnetic ensemble, which in turns controls the overall resistance thus leaving memory of current passage in the system. This introduces a current-dependent effect for a dynamic resistive state. We simulate a spin-induced thermal phase-change mechanism, and an athermal domain-wall spin inversion. In both cases we observe electrical memory behavior with an I – V hysteretic pinched loop, typical of memristors. These results can be extended to the more complex geometries in which artificial spin ice can be designed to engineer the hysteresis curve.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Berry curvature memory through electrically driven stacking transitions

In two-dimensional layered quantum materials, the interlayer stacking order determines both crystalline symmetry and quantum electronic properties such as Berry curvature, topology and electron correlation. Electrical stimuli can strongly influence quasi-particle interactions and the free energy landscape, thus making it possible to access hidden stacking orders with novel quantum properties and enabling dynamic engineering of these attributes. In this paper, we demonstrate electrically driven stacking transitions and a new type of nonvolatile memory based on Berry curvature in few-layer WTe 2 . The interplay of out-of-plane electric fields and electrostatic doping controls in-plane interlayer sliding and creates multiple polar and centrosymmetric stacking orders. In-situ nonlinear Hall transport reveals such stacking rearrangements result in a layer-parity-selective Berry curvature memory in momentum space, where the sign reversal of the Berry curvature only occurs in odd layer crystals. Our findings open an avenue towards exploring coupling between topology, electron correlations, and ferroelectricity in hidden stacking orders and demonstrate a new low energy cost, electrically-controlled topological memory in the atomically thin limit.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Tolerating memory stack failures in multi-stack systems

Memory management circuitry and processes operate to improve reliability of a group of memory stacks, providing that if a memory stack or a portion thereof fails during the product's lifetime, the system may still recover with no errors or data loss. A front-end controller receives a block of data requested to be written to memory, divides the block into sub-blocks, and creates a new redundant reliability sub-block. The sub-blocks are then written to different memory stacks. When reading data from the memory stacks, the front-end controller detects errors indicating a failure within one of the memory stacks, and recovers corrected data using the reliability sub-block. The front-end controller may monitor errors for signs of a stack failure and disable the failed stack.

Mappouras, Georgios↗
DOE OSTI2023

Cognitively defined Alzheimer's dementia subgroups have distinct atrophy patterns

We sought to determine structural magnetic resonance imaging (MRI) characteristics across subgroups defined based on relative cognitive domain impairments using data from the Alzheimer's Disease Neuroimaging Initiative (ADNI) and to compare cognitively defined to imaging-defined subgroups. We used data from 584 people with Alzheimer's disease (AD) (461 amyloid positive, 123 unknown amyloid status) and 118 amyloid-negative controls. We used voxel-based morphometry to compare gray matter volume (GMV) for each group compared to controls and to AD-Memory. There was pronounced bilateral lower medial temporal lobe atrophy with relative cortical sparing for AD-Memory, lower left hemisphere GMV for AD-Language, anterior lower GMV for AD-Executive, and posterior lower GMV for AD-Visuospatial. Formal asymmetry comparisons showed substantially more asymmetry in the AD-Language group than any other group (p = 1.15 × 10 -10 ). For overlap between imaging-defined and cognitively defined subgroups, AD-Memory matched up with an imaging-defined limbic predominant group. MRI findings differ across cognitively defined AD subgroups.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2020

Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Research on phase change materials is predominantly focused on their application as memory devices or for temperature control which requires low phase change temperature. The Ge–Se binary chalcogenide glass system with its wide glass-forming region is a potential candidate for high-temperature and high-radiation phase change applications. In this study, the concept of employing Ge x Se 100– x glasses to monitor high temperature (450–528 °C) using the phase change effect, is reported. Materials selection, device structure, and performance of prototype sensors are analyzed. In addition, the effect of heavy ion irradiation by Xe ions with energies of 200, 600, and 1000 keV (fluence ≈10 14 cm –2 ) on the Ge x Se 100– x ( x = 30, 33, 40) thin films and phase change devices is studied. The irradiation effect on the amorphous and crystalline structure of the thin films is evaluated by Raman spectroscopy and X-ray diffraction (XRD). Although the changes in the structural units of amorphous films are negligible, in crystalline films orthorhombic-GeSe 2 crystals are found to be most affected by irradiation and a new phase, orthorhombic GeSe is found in the thin films after irradiation. The performance of a sensor with an active film of Ge 40 Se 60 is also shown as an example.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Localized strain profile in surface electrode array for programmable composite multiferroic devices

In this work, we investigate localized in-plane strains on the microscale, induced by arrays of biased surface electrodes patterned on piezoelectrics. Particular focus is given to the influence that adjacent electrode pairs have on one another to study the impact of densely packed electrode arrays. We present a series of X-ray microdiffraction studies to reveal the spatially resolved micrometer-scale strain distribution. The strain maps with micrometer-scale resolution highlight how the local strain profile in square regions up to 250 x 250 lm 2 in size is affected by the surface electrodes that are patterned on ferroelectric single-crystal [Pb(Mg 1/3 Nb 2/3 )O 3 ] x -[PbTiO 3 ] 1-x . The experimental measurements and simulation results show the influence of electrode pair distance, positioning of the electrode pair, including the angle of placement, and neighboring electrode pair arrangements on the strength and direction of the regional strain. Our findings are relevant to the development of microarchitected strain-mediated multiferroic devices. The electrode arrays could provide array-addressable localized strain control for applications including straintronic memory, probabilistic computing platforms, microwave devices, and magnetic-activated cell sorting platforms.

42 ENGINEERING↗
DOE OSTI2025

Energy transfer between localized emitters in photonic cavities from first principles

Radiative and nonradiative resonant couplings between defects are ubiquitous phenomena in photonic devices used in classical and quantum information technology applications. In this work, we present a first-principles approach to enable quantitative predictions of the energy transfer between defects in photonic cavities, beyond the dipole-dipole approximation and including the many-body nature of the electronic states. As an example, we discuss the energy transfer from a dipolelike emitter to an 𝐹 center in MgO in a spherical cavity. We show that the cavity can be used to controllably enhance or suppress specific spin-flip and spin-conserving transitions. Specifically, we predict that an ∼10–100 enhancement in the resonant energy transfer rate can be gained in the case of the 𝐹 center in MgO at ∼10 nm distances from a dipolar source, using rather moderate cavity with quality factor 𝑄 ∼ 400. We also show that a similar suppression in the transfer rate can be achieved by off-tuning the cavity resonance relative to the emitter transition energy. The framework presented here is general and readily applicable to a wide range of devices where localized emitters are embedded in microspheres, core-shell nanoparticles, and dielectric Mie resonators. Hence, our approach paves the way to predict how to control energy transfer in quantum memories and in ultrahigh-density optical memories, and in a variety of quantum information platforms.

First-principles calculations↗
DOE OSTI2021

Understanding Complex Magnetic Spin Textures with Simulation-Assisted Lorentz Transmission Electron Microscopy

There is an increased interest in topologically nontrivial magnetic spin textures such as skyrmions and chiral domain-wall solitons, both from a point of fundamental physics understanding as well as potential technological interest in low-power memory applications. In order to control their behavior, it is necessary to understand their complex spin texture at the nanoscale. Lorentz transmission electron microscopy (LTEM) is a suitable technique for studying these systems due to its high spatial resolution and capability to simultaneously characterize magnetic texture and microstructure. In this work, we present the application of PyLorentz, an open-source software suite that we have developed, for quantitative image analysis of Neel-type skyrmions in thin-film heterostructures. PyLorentz enhances LTEM capabilities by enabling reconstruction of magnetic induction maps from experimental images, as well as simulating LTEM images using micromagnetic simulation data. We demonstrate this for simulated Neel skyrmions as well as experimental data from [Pt/Co/W] multilayer heterostructures. Finally, we also show how simulation-assisted LTEM analysis is crucial for understanding these complex magnetic spin textures, in which the reconstructed magnetic induction map (seen in the LTEM images) differs significantly from the magnetization configuration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Tip-based proximity ferroelectric switching and piezoelectric response in wurtzite multilayers

Proximity ferroelectricity is a paradigm for inducing ferroelectricity when a nonferroelectric polar material (such as Al⁢ N), which is unswitchable with an external field below the dielectric breakdown field, becomes a practically switchable ferroelectric in direct contact with a thin switchable ferroelectric layer (such as Al 1−𝑥 ⁢Sc 𝑥 ⁢N). Here, we develop a Landau-Ginzburg-Devonshire approach to study the proximity effect of local piezoelectric response and polarization reversal in wurtzite ferroelectric multilayers under a sharp electrically biased tip. Using finite-element modeling, we analyze the probe-induced nucleation of nanodomains, the features of local polarization hysteresis loops and coercive fields in the Al 1−𝑥 ⁢Sc 𝑥 ⁢N/Al⁢ N bilayers and three-layers. Similar to the wurtzite multilayers sandwiched between two parallel electrodes, the regimes of “proximity switching” (when all layers collectively switch) and the regime of “proximity suppression” (when they collectively do not switch) are the only two possible regimes in the probe-electrode geometry. However, the parameters and asymmetry of the local piezoresponse and polarization hysteresis loops depend significantly on the sequence of the layers with respect to the probe. The physical mechanism of proximity ferroelectricity in the local probe geometry is a depolarizing electric field determined by the polarization of the layers and their relative thickness. The field, whose direction is opposite to the polarization vector in the layer(s) with the larger spontaneous polarization (such as Al⁢ N), renormalizes the double-well ferroelectric potential to lower the steepness of the switching barrier in the “otherwise unswitchable” polar layers. Tip-based control of domains in otherwise nonferroelectric layers using proximity ferroelectricity can provide nanoscale control of domain reversal in memory, actuation, sensing, and optical applications. The ability of the tip-induced proximity switching to differentially switch multilayers, based on the order of the layers, provides a powerful tool for selective domain engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Reinforcement-based Program Induction in a Neural Virtual Machine

We present a neural virtual machine that can be trained to perform algorithmic tasks. Rather than combining a neural controller with non-neural memory storage as has been done in the past, this architecture is purely neural and emulates tape-based memory via fast associative weights (onestep learning). Here we formally define the architecture, and then extend the system to learn programs using recurrent policy gradient reinforcement learning based on examples of program inputs labeled with corresponding output targets, which are compared against actual output to generate a sparse reward signal. We describe the policy gradient training procedure used, and report its empirical performance on a number of smallscale list processing tasks, such as finding the maximum list element, filtering out certain elements, and reversing the order of the elements. These results show that program induction via reinforcement learning is possible using sparse rewards and solely neural computations.

Katz, Garrett E.↗
DOE OSTI2021

GPU remote communication with triggered operations

Methods, devices, and systems for transmitting data over a computer communications network are disclosed. A queue of communications commands can be pre-generated using a central processing unit (CPU) and stored in a device memory of a network interface controller (NIC). Thereafter, if a graphics processing unit (GPU) has data to communicate to a remote GPU, it can store the data in a send buffer, where the location in the buffer is pointed to by a pre-generated command. The GPU can then signal to the interface device that the data is ready, triggering execution of the pre-generated command to send the data.

LeBeane, Michael W.↗