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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Design and Optimization of a 200-kW Medium-Frequency Transformer for Medium-Voltage SiC PV Inverters

This paper presents a design and optimization methodology for a 200-kW medium-frequency transformer (MFT) based on low-loss magnetic core (FINEMET FT-3TL). The proposed optimal design methodology consists of predesign, preliminary design, and optimal design. In the preliminary design, the parallel-concentric winding structure is selected to increase the current carrying capability and reduce the leakage inductance. Based on the parallel-concentric winding concept, a novel cooing and insulation structure with 3-D printed bobbins are proposed. The optimal designed MFT prototype achieves a power density higher than 19.23 kW/L. The electrical insulation system is tested at 12 kV ac peak voltage. In addition, the partial discharge (PD) test is conducted at 7.5 kV ac peak voltage to ensure the PD-free design. The high-frequency bipolar pulsewidth modulation voltage insulation (PD) test is the first time applied in MFT design and test process. Finally, the transformer is applied in a dual-active-bridge (DAB) converter with 200 kW rated power. The peak efficiency of the DAB converter is 99.53%, and the efficiency at 200 kW is 98.85%. The peak efficiency of MFT is 99.844%, and the efficiency at 200 kW is 99.842%.

42 ENGINEERING↗
DOE OSTI2021

The Impact of the Lightning Surge on SiC-based Medium-voltage Three-phase Four-wire Grid-connected Converters

The surge voltage induced by lightning will generate an inrush current in a grid-connected converter. It may not be large in Si-based converters because of the large grid side inductive filter. However, for SiC-based multi-level converters, the inrush current could be very large due to the small filter inductance, which is selected based on the current harmonic consideration. Most previous work focuses on system-level lightning protection while the converter-level impact, especially the internal components of the converter, is rarely discussed. This paper presents the analysis of the impact of the lightning surge on a 10 kV SiC MOSFET-based 13.8 kV three-phase four-wire grid-connected converter. The IEEE arrester model and the combined wave generator model in IEC 61000-4-5 standard are used to evaluate the inrush current, DC-link overvoltage, and component-to-ground potential of the converter. Analysis and simulation results have been provided to demonstrate the impact of lightning on the grid-connected converter. It is found that large inrush current occurs due to the small filter inductance, and the neutral-to-ground impedance impacts both the inrush current and the neutral point-to-ground potential.

Li, Haiguo↗
DOE OSTI2020

Robust Medium-Voltage Distribution System State Estimation using Multi-Source Data

Due to the lack of sufficient online measurements for distribution system observability, pseudo-measurements from short-term load or distributed renewable energy resources (DERs) forecasting are used. However, the accuracy of them is low and thus significantly limits the performance of distribution system state estimation (DSSE). In this paper, a robust DSSE that integrates multi-source measurement data is proposed. Specifically, the historical low-voltage (LV) side smart meters are used to forecast load and DERs injections via the support vector machine (SVM) with optimally tuned parameters. By contrast, the online smart meters at LV side are utilized to derive equivalent power injections at the MV/LV transformers, yielding more accurate pseudo-measurements compared to the forecasted injections. Furthermore, to deal with bad data caused by communication loss, instrumental errors and cyber attacks, robust DSSE that relies on generalized maximum-likelihood (GM)-estimation criterion is developed. The projection statistics are developed to adjust the weights of each measurement, leading to better balance between pseudo- and real-time measurements. Numerical results conducted on modified IEEE 33-bus system with DG integration demonstrate the effectiveness and robustness of the proposed method.

distribution system state estimation↗
DOE OSTI2021

Hardware Design of Medium Voltage SiC-Based Modular Multilevel Converters for Grid-Tied Applications

This paper presents a design of a 10 kV silicon carbide (SiC) MOSFET based modular multilevel converter (MMC). The MMC functions as the interconnection between a 24 kV dc bus and a 13. SkV distribution grid. This paper focuses on the hardware design of the MMC and its submodules. The gate driver, auxiliary power supply and bus bur in submodules are major components that need to meet high dv/dt immunity and high insulation voltage requirements. The gate driver achieves over 200 kV/us common mode transient immunity (CMTI). Its associated auxiliary power supply is based on an on-board transformer with over 30 kV insulation capability and 1.4 pF barrier capacitance. The busbar achieves less than 11 kV/cm electric field in the air to avoid partial discharges. Validation tests of the MMC submodule were performed by double pulse tests at 5 kV and buck converter tests at3 kV, 52A (peak). Reliable operations were achieved in validation tests.

auxiliary power supply↗
DOE OSTI2023

20-kV GaN Switch Technology Demonstrated in High-Efficiency Medium-Voltage Power Module

GaN holds significant potential as a material for vertical p-n diodes, enabling the realization of devices with reverse breakdown voltages of 5 kV or higher. Carbon serves as the primary compensating dopant in the growth process, incorporated into GaN during metalorganic chemical vapor deposition (MOCVD) growth. The level of carbon incorporation depends on several factors, including growth rate, ammonia flow, temperature, pressure, and trimethylgallium (TMGa) flow. Through guided empirical modeling, the carbon incorporation in GaN growth could be predicted using a single parameter based on the ratio of ammonia flow to the growth rate. This model accurately predicts carbon concentrations ranging from 1x10 17 to 5x10 14 cm -3 while maximizing growth rates. Other extrinsic dopants have either been reduced below the threshold of consideration or modeled using similar single-parameter relationships. By identifying the dominant extrinsic dopants and accounting for them, an intrinsic defect with a concentration of 2.2x10 15 cm -3 was identified. By combining these relationships, growth conditions for n-GaN were optimized, resulting in electron concentrations as low as 1x10 15 cm -3 . Leveraging these techniques, p-n diodes were grown, achieving a reverse breakdown voltage as high as 3.1 kV.

36 MATERIALS SCIENCE↗