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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Spontaneous Asymmetry of Chiral Magnetic Domains Within a Magnetic Field

Abstract Chiral magnetic domains are topological spin textures in which the Dzyaloshinskii–Moriya interaction assigns a given chirality to the domain walls. Notably, despite rapid progress in chiral magnetic research, one fundamental issue that remains unclear is how the chirality of chiral magnetic domains change as a magnetic field deforms the spin texture. Using spin‐polarized low energy electron microscopy, the evolution of Fe/Ni chiral magnetic stripe domains are investigated in single‐crystalline Fe/Ni/Cu/Co/Cu(001) multilayers in which the interlayer magnetic coupling between the Co and Fe/Ni films serves as an in‐plane magnetic field. Contrary to theoretical works, it is found that the chirality of the Néel walls results in a parallel alignment of the magnetic stripes with the in‐plane magnetic field direction. The transformation of chiral Néel walls into achiral Bloch walls can be precisely controlled by tuning the Cu spacer layer thickness. In addition, the domain wall exhibits a spontaneous asymmetry within the in‐plane magnetic field, leading to an unbalanced chirality between the left‐handed and right‐handed Bloch walls. These new results foster a better understanding of the chiral domain properties within a magnetic field.

Li, Qian↗
DOE OSTI2024

Manipulation of the magnetic monopole injection for topological transition

Abstract Manipulating the topological properties of spin textures in magnetic materials is of great interest due to the rich physics and promising technological applications of these materials in advanced electronic devices. A spin texture with desired topological properties can be created by magnetic monopole injection, resulting in topological transitions involving changes in the topological charge. Therefore, controlling magnetic monopole injection has paramount importance for obtaining the desired spin textures but has not yet been reported. Here, we report the use of reliably manipulated magnetic monopole injection in the topological transition from stripe domains to skyrmions in an Fe/Gd multilayer. An easily tunable in-plane magnetic field applied to an Fe/Gd multilayer plays a key role in the magnetic monopole injection by modulating the local exchange energy. Our findings facilitate the efficient management of topological transitions by providing an important method for controlling magnetic monopole injection.

36 MATERIALS SCIENCE↗
NASA NTRS2000

All-Metal Magnetic RAM

The factors that enter into the development of an all-metal, nonvolatile magnetic RAM, in which multilayer giant magnetoresistive films are used for all functions - storage, readout, and support electronics - are described. Four significant characteristics are expected to favor all-metal over hybrid magnetic RAM. First, silicon-technology fabrication requires a large number of masking steps, including complex ones such as ion implantation. Conversely, all-metal technology is inherently simple: fewer masking steps, no doping, scaling to lithographic limits, very little operating power. Second, the all-metal footprint is significantly smaller than the hybrid one. Third, an all-metal RAM is expected to be able to be miniaturized to lithographic limits; miniaturization of hybrid magnetic RAMs is likely to be limited by the semiconductor circuitry. Finally, semiconductor processing and magnetic processing in MRAM are done separately because the former requires high temperatures, whereas magnetic fabrication is a low-temperature process. By contrast, because both GMR electronics and the memory elements are made of the same materials, the two major components are deposited and patterned concurrently on the same substrate.

Torok, E. J.↗
DOE OSTI2023

Direct Observation of Magnetic Bubble Lattices and Magnetoelastic Effects in van der Waals Cr 2 Ge 2 Te 6

Abstract Ferromagnetic van der Waals (vdW) materials are of large current interest for the fundamental study of low‐dimensional magnetism and for potential applications in multilayer heterostructures. Cr 2 Ge 2 Te 6 (CGT) is particularly exciting because it is a ferromagnetic semiconductor with tunable electronic and magnetic properties. Controlling the magnetic domain structure of CGT is a requirement for understanding its novel interface physics and for tuning behavior for potential devices. Herein, cryo‐Lorentz transmission electron microscopy is performed in the temperature range of 12–50K to directly image the magnetic domain structures in CGT. A rich phase diagram of domain structures including stripe domains, magnetic bubble lattices of mixed‐chirality, and topologically‐protected lattices of homochiral magnetic bubbles is observed. The types and chiralities of the bubbles can be controlled by topographical changes in the CGT flakes. Additionally, it is observed that in‐plane strain and magnetoelastic coupling can align and organize both bubble lattices and stripe domains. This study provides insights into creating and controlling complex magnetic domain structures for integration into multilayer heterostructures and for future studies of 2D magnetism.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Tuning the Chern number in quantum anomalous Hall insulators

A quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has a quantized Hall resistance of h/(Ce 2 ) and vanishing longitudinal resistance under zero magnetic field (where h is the Planck constant, e is the elementary charge, and the Chern number C is an integer). The QAH effect has been realized in magnetic topological insulators and magic-angle twisted bilayer graphene. However, the QAH effect at zero magnetic field has so far been realized only for C = 1. Here we realize a well quantized QAH effect with tunable Chern number (up to C = 5) in multilayer structures consisting of alternating magnetic and undoped topological insulator layers, fabricated using molecular beam epitaxy. The Chern number of these QAH insulators is determined by the number of undoped topological insulator layers in the multilayer structure. Moreover, we demonstrate that the Chern number of a given multilayer structure can be tuned by varying either the magnetic doping concentration in the magnetic topological insulator layers or the thickness of the interior magnetic topological insulator layer. We develop a theoretical model to explain our experimental observations and establish phase diagrams for QAH insulators with high, tunable Chern number. Furthermore, the realization of such insulators facilitates the application of dissipationless chiral edge currents in energy-efficient electronic devices, and opens up opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Optical control of topological memory based on orbital magnetization

Under suitable conditions, some twisted graphene multilayers and transition-metal dichalcogenides become Chern insulators, exhibiting the anomalous quantum Hall effect and orbital magnetization due to spontaneous valley polarization. We study the interaction of a Chern insulator with circularly polarized light. Here, the interaction energy contains an antisymmetric term that couples to the helicity of incident light. For a two-band Chern insulator, this term is expressed as an integral involving the Berry curvature of the system. Taking advantage of this interaction, we propose an experimental protocol for switching topological memory based on orbital magnetization by circularly polarized light. Moreover, two laser beams of opposite circular polarization can nucleate domains of opposite magnetization and thus produce an optically configurable domain wall carrying topologically protected chiral edge modes.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Inducing a tunable skyrmion-antiskyrmion system through ion beam modification of FeGe films

Abstract Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic noncentrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we must understand skyrmion-defect interactions with two main goals—determining how skyrmions navigate intrinsic material defects and determining how to engineer disorder for optimal device operation. Here, we introduce a tunable means of creating a skyrmion-antiskyrmion system by engineering the disorder landscape in FeGe using ion irradiation. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au 4+ ions at varying fluences, inducing amorphous regions within the crystalline matrix. Using low-temperature electrical transport and magnetization measurements, we observe a strong topological Hall effect with a double-peak feature that serves as a signature of skyrmions and antiskyrmions. These results are a step towards the development of information storage devices that use skyrmions and antiskyrmions as storage bits, and our system may serve as a testbed for theoretically predicted phenomena in skyrmion-antiskyrmion crystals.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Anomalous Hall crystals in rhombohedral multilayer graphene. II. General mechanism and a minimal model

Here we propose a minimal "three-patch model"for the anomalous Hall crystal (AHC), a topological electronic state that spontaneously breaks both time-reversal symmetry and continuous translation symmetry. The proposal for this state is inspired by the recently observed integer and fractional quantum Hall states in rhombohedral multilayer graphene at zero magnetic field. There, interaction effects appear to amplify the effects of a weak moiré potential, leading to the formation of stable, isolated Chern bands. It has been further shown that Chern bands are stabilized in mean-field calculations even without a moiré potential, enabling a realization of the AHC state. Our model is built on the dissection of the Brillouin zone into patches centered around high-symmetry points. Within this model, the wave functions at high-symmetry points fully determine the topology and energetics of the state. We extract two quantum geometrical phases of the noninteracting wave functions that control the stability of the topologically nontrivial AHC state. The model predicts that the AHC state wins over the topological trivial Wigner crystal in a wide range of parameters, and agrees very well with the results of full self-consistent Hartree-Fock calculations of the rhombohedral multilayer graphene Hamiltonian.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Unconventional domain-wall pairs and interacting Bloch lines in a Dzyaloshinskii-Moriya multilayer thin film

Bloch-lines (BLs) play a key role in determining the static and dynamic behavior of chiral domain walls and skyrmions in multilayer films with a significant Dzyaloshinskii-Moriya interaction (DMI). Here, using in-situ Lorentz phase microscopy, we reveal a new type of spin texture, termed a type-II domain wall pair (DWP), stabilized in DMI multilayer thin films with BLs. For a type-II DWP, the Bloch components of each complementary domain wall are parallel, implying opposite chirality. Additionally, we find that type-II DWPs preferentially form through bifurcation of a type-I DWP and require the formation of at least two BLs. We demonstrate a distinct phase jump associated with type-II DWPs, and further reveal the role they play in the formation of mixed-character skyrmions where the Bloch component that can be of either left- or right-handed chirality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Enhanced Interface-Driven Perpendicular Magnetic Anisotropy by Symmetry Control in Oxide Superlattices

Perpendicular magnetic anisotropy (PMA) has recently been shown to emerge at interfaces of 3d and 5d transition-metal oxides (TMOs). However, strategies to systematically stabilize such interface-driven PMA still remains elusive, hindering further applications of this design approach. Here, tuning crystal symmetry is shown to be an effective means to engineer this interfacial phenomenon. The evolution of PMA strength as a function of ferromagnetic oxide thickness quantitatively reveals the competition between volume- and interface-specific contributions that determine the magnetic anisotropy. By applying different degrees of epitaxial strain, the relative contributions to PMA are modulated, clearly revealing their correlations with crystal symmetries. To be more specific, the volume anisotropy energy is found to be correlated with the tetragonal distortion of the ferromagnetic layer, while the interface anisotropy energy is mainly modulated by the octahedral tilting at the interface. With these insights, superlattices with enhanced interface-driven PMA and higher Curie temperature are realized. These findings reveal a route to engineering interface-driven PMA and associated magnetic phenomena in TMO heterostructures for future spintronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1980

A spacecraft mass memory design using self-structured magnetic bubbles

A self-structured multilayered bubble device developed for spacecraft sensor systems is described. The data link buffer mass memory is analyzed, and system characteristics are estimated based on a nominal 1.6 micron bubble diameter. It is shown that a memory of at least 10 billion bits capacity and 30 megabits per second could be developed with conventional spacecraft constraints.

Stermer, R. L., Jr.↗
DOE OSTI2021

RKKY Exchange Bias Mediated Ultrafast All-Optical Switching of a Ferromagnet

The discovery of ultrafast helicity-independent all-optical switching (HI-AOS), as well as picosecond all-electrical switching of a ferrimagnet, has inspired the ultrafast spintronics community to explore ultrafast switching of a ferromagnet to achieve practical ultrafast storage and memory devices. Two explored mechanisms of HI-AOS of a ferromagnet in ferromagnet-ferrimagnet heterostructure are: a) exploiting the indirect exchange coupling with and b) injection of non-local spin current originated from a switching ferrimagnet. Here, in this manuscript, exchange mediated HI-AOS of a Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange coupled “[Co/Pt]-multilayers/Pt spacer/CoGd” heterostructure is demonstrated. The authors have measured layer-resolved static magnetic properties, single-shot HI-AOS, and magnetization dynamics of the ferromagnetic Co/Pt multilayers (MLs), that are ferromagnetically or antiferromagnetically coupled with ferrimagnetic CoGd layers. Time-resolved magnetization dynamics reveal a 3.5 ps switching time of the Co/Pt MLs, which is the fastest switching of a ferromagnet reported to date. Employing an extended microscopic three-temperature model, the temporal dynamics of the exchange coupled ferromagnet–ferrimagnet heterostructure are simulated, qualitatively and quantitatively explaining the experimental switching phenomena. This work experimentally as well as theoretically establishes the mechanism of exchange mediated all-optical switching of ferromagnet-ferrimagnet heterostructures, which can be integrated with a magnetic tunnel junction for efficient reading after ultrafast energy-efficient switching.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Current-Driven Magnetization Reversal in Orbital Chern Insulators

Graphene multilayers with flat moiré minibands can exhibit the quantized anomalous Hall effect due to the combined influence of spontaneous valley polarization and topologically nontrivial valley-projected bands. The sign of the Hall effect in these Chern insulators can be reversed either by applying an external magnetic field, or by driving a transport current through the system. Here we propose a current-driven mechanism whereby reversal occurs along lines in the (current I , magnetic-field B ) control parameter space with slope d I / d B = ( e / h ) M A M ( 1 – γ 2 ) / γ , where M is the magnetization, A M is the moiré unit cell area, and γ < 1 is the ratio of the chemical potential difference between valleys along a domain wall to the electrical bias e V .

2-dimensional systems↗
DOE OSTI2023

Ultrafast Control of Interfacial Exchange Coupling in Ferromagnetic Bilayer

Fast spin manipulation in magnetic heterostructures, where magnetic interactions between different materials often define the functionality of devices, is a key issue in the development of ultrafast spintronics. Although recently developed optical approaches such as ultrafast spin-transfer and spin–orbit torques open new pathways to fast spin manipulation, these processes do not fully utilize the unique possibilities offered by interfacial magnetic coupling effects in ferromagnetic multilayer systems. Here, ultrafast optically controlled interfacial exchange interactions in the ferromagnetic Co 2 FeAl/(Ga,Mn)As system at low laser fluence levels are experimentally demonstrated. The excitation efficiency of Co 2 FeAl with the (Ga,Mn)As layer is 30–40 times higher than the case with the GaAs layer at 5 K due to the modification of exchange coupling interaction via photoexcited charge transfer between the two ferromagnetic layers. In addition, the coherent spin precessions persist to room temperature, excluding the drive of pump-modulated magnetization in the (Ga,Mn)As layer and indicating a proximity-effect-related optical excitation mechanism. The results highlight the importance of interfacial exchange interactions in ferromagnetic heterostructures and how these magnetic coupling effects can be utilized for ultrafast, low-power spin manipulation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Exploring phase transitions and magnetoelectric coupling of epitaxial asymmetric multilayer heterostructures

Magnetoelectric (ME) heterostructures can exhibit higher magnetic and ferroelectric ordering temperatures along with large ME coupling compared to single-phase multiferroic materials. We synthesized Pb(Fe 0.5 Nb 0.5 )O 3 (PFN)/Ni 0.65 Zn 0.35 Fe 2 O 4 (NZFO)/Pb(Fe 0.5 Nb 0.5 )O 3 (PFN)/Ni 0.65 Zn 0.35 Fe 2 O 4 (NZFO)/Pb(Fe 0.5 Nb 0.5 )O 3 (PFN) multilayer heterostructures having dimensions of 40/10/40/10/40 nm. High quality epitaxial growth of these heterostructures was confirmed via X-ray diffraction (XRD) and selected area electron diffraction (SAED) patterns. These nanostructures show well saturated polarization (~52 μC cm -2 ) and magnetization (~62 emu cm -3 ) at room temperature (RT). The magnetic and ferroelectric transitions occur well above RT. These heterostructures exhibit relaxor behavior and undergo 2nd order ferroelectric phase transition. Magnetodielectric measurements show significant coupling between the magnetic and electrical order parameters at RT. These characteristics of the heterostructures make them suitable as potential candidates for ultra-low power memory, spintronics, and different multifunctional (micro)nanoscale device applications.

36 MATERIALS SCIENCE↗
NASA NTRS1972

Magnetic circuitry mutual coupling probe

Development of magnetic probe for nondestructive testing of multilayer printed circuit boards to determine existence of opens or shorts is reported. Components of probe are described and procedures for operation are discussed. Two illustrations are provided to show magnetic circuits and principles of operation.

Anthony, P. L.↗
DOE OSTI2023

Probing Defects and Spin‐Phonon Coupling in CrSBr via Resonant Raman Scattering

Abstract Understanding the stability limitations and defect formation mechanisms in 2D magnets is essential for their utilization in spintronic and memory technologies. Here, defects in mono‐ to multilayer CrSBr are correlated with structural, vibrational, and magnetic properties. Resonant Raman scattering is used to reveal distinct vibrational defect signatures. In pristine CrSBr, it is shown that bromine atoms mediate vibrational interlayer coupling, allowing for distinguishing between surface and bulk defect modes. Environmental exposure is shown to cause drastic degradation in monolayers, with the formation of intralayer defects. This is in contrast to multilayers that predominantly show bromine surface defects. Through deliberate ion irradiation, the formation of defect modes is tuned: these are strongly polarized and resonantly enhanced, reflecting the quasi‐‐1D electronic character of CrSBr. Strikingly, pronounced signatures of spin‐phonon coupling of the intrinsic phonon modes and the ion beam‐induced defect modes are observed throughout the magnetic transition temperature. Overall, defect engineering of magnetic properties is possible, with resonant Raman spectroscopy serving as a direct fingerprint of magnetic phases and defects in CrSBr.

2D magnetic semiconductors↗
DOE OSTI2024

Anomalous Hall Crystals in Rhombohedral Multilayer Graphene. I. Interaction-Driven Chern Bands and Fractional Quantum Hall States at Zero Magnetic Field

Recent experiments on rhombohedral pentalayer graphene with a substrate-induced moiré potential have identified both Chern insulators and fractional quantum Hall states at zero magnetic field. Surprisingly, these states are observed in strong displacement fields where the effects of the moiré lattice are weak, and seem to be readily accessed without fine-tuning. To address these experimental puzzles, we study a model of interacting electrons in this geometry. Within self-consistent Hartree-Fock (SCHF) calculations, we find an isolated Chern band with small bandwidth and good quantum geometry. Exact diagonalization and density-matrix renormalization group calculations both confirm the band hosts fractional quantum Hall states without a magnetic field. Remarkably, the Chern band is stable at a wide range of angles, at four through six rhombohedral layers, at varying rhombohedral hopping parameters, and—most strikingly—survives in SCHF calculations when the moiré potential vanishes. In this limit, the state spontaneously breaks time-reversal and translation symmetry simultaneously, giving a topological crystalline state that we term the “anomalous Hall crystal.” We argue this is a general mechanism to create stable Chern bands in rhombohedral multilayer graphene, opening the door to studying the interplay between electronic topology, fractionalization, and spontaneous translation symmetry breaking.

36 MATERIALS SCIENCE↗