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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Ultra-low magnetic damping in epitaxial Li 0.5 Fe 2.5 O 4 thin films

The realization of more energy efficient nanomagnetic information devices relies on the existence of magnetic insulators capable of supporting pure spin currents in the absence of a dissipative charge current. Currently, there is a limited number of thin-film magnetic insulators with low magnetic damping. Li 0.5 Fe 2.5 O 4 (LFO) is well known to possess the lowest damping among the bulk spinel structure oxides, but, thus far, LFO thin films have not lived up to these expectations. Here, we demonstrate low magnetic damping (even lower than typical bulk values) and bulk magnetization in 3 nm thick epitaxial LFO thin films. At room temperature, SQUID magnetometry shows a high saturation magnetization of 320 kA/m, and broadband ferromagnetic resonance measurements yield an effective Gilbert damping parameter of 1.3×10 -3 , which is among the lowest reported for ferro-/ferrimagnetic films of comparable thickness. Our results show the promise of LFO as a candidate material for spin current-based spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Interface-induced superconductivity in magnetic topological insulators

The interface between two different materials can show unexpected quantum phenomena. Here, in this study, we used molecular beam epitaxy to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We observed emergent interface-induced superconductivity in these heterostructures and demonstrated the co-occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer—the three essential ingredients of chiral topological superconductivity (TSC). The unusual coexistence of ferromagnetism and superconductivity is accompanied by a high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. These magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Néel domain walls with bistable chirality in a perpendicularly magnetized ferrimagnetic insulator

Field-free spin-orbit torque-driven domain wall motion in magnetic thin films with perpendicular magnetic anisotropy (PMA) requires the domain walls to have Néel character. Conventionally, Néel domain walls are stabilized by the Dzyaloshinskii-Moriya interaction (DMI) in ultrathin films. Here, in a europium iron garnet thin film with PMA and an additional uniaxial in-plane anisotropy, we demonstrate two bistable Néel domain wall states in the absence of DMI, and the capability to toggle the wall states with an in-plane field pulse and consequently their directions of motion under a current pulse. We present a phase diagram for the bistable Néel domain wall states as a function of in-plane field pulse width and amplitude. By fitting the experimental data to an analytical model of Néel wall reversal through the nucleation and propagation of Bloch lines, we extract the length of the initial reversed domain wall segment and Bloch line nucleation energy barrier. Current-driven motion of in-plane anisotropy stabilized Néel walls is qualitatively different from that of DMI-stabilized ones owing to the different symmetry of the effective fields that stabilize the Néel configuration. Furthermore, we present a proof of principle demonstration for 2-bit random number generation based on the stochastic reversal of domain wall chirality. These results provide critical insight into the topological energy barrier of Bloch lines and identify paths towards domain wall-based memory and computing devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Quasi-two-dimensional ferromagnetism and anisotropic interlayer couplings in the magnetic topological insulator MnBi 2 Te 4

MnBi 2 Te 4 (MBT) is a promising van der Waals layered antiferromagnetic (AFM) topological insulator that combines a topologically nontrivial inverted Bi-Te band gap with ferromagnetic (FM) layers of Mn ions. Here, the inelastic neutron scattering on single crystals reported here describes rather complex magnetism in MBT. The magnetic anisotropy that controls the bulk and surface magnetic field response of MBT is found to have contributions from both single-ion and interlayer two-ion terms. A description of the quasi-two-dimensional intralayer FM spin waves requires long-range, competing FM and AFM interactions and anomalous damping. While this might suggest carrier-mediated magnetic coupling, abinitio calculations in insulating MBT also find long-range interactions, and classical spin dynamics simulations suggest that magnetic vacancies are at least partially responsible for observations of anomalous damping near the zone boundary.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Crystal and magnetic structures of magnetic topological insulators MnBi 2 Te 4 and MnBi 4 Te 7

Using single-crystal neutron diffraction, we present a systematic investigation of the crystal structure and magnetism of the van der Waals topological insulators MnBi 2 Te 4 and MnBi 4 Te 7 , where rich topological quantum states have been recently predicted and observed. Structural refinements reveal that considerable Bi atoms occupied on the Mn sites in both materials, distinct from the previously reported antisite disorder. We show unambiguously that MnBi 2 Te 4 orders antiferromagnetically below 24 K, featured by a magnetic symmetry R I - 3 c , while MnBi 4 Te 7 is antiferromagnetic below 13 K with a magnetic space group P c - 3 c 1 . They both present antiferromagnetically coupled ferromagnetic layers with spins along the c axis. We put forward a stacking rule for the crystal structure of an infinitely adaptive series MnBi 2 n Te 3 n + 1 ( n ≥ 1 ) with a building unit of [ Bi 2 Te 3 ] . Overall, by comparing the magnetic properties between MnBi 2 Te 4 and MnBi 4 Te 7 , together with recent density-functional theory calculations, we concluded that a two-dimensional magnetism limit might be realized in the derivatives. Our work may promote theoretical studies of topological magnetic states in the series of MnBi 2 n Te 3 n + 1 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Strongly Surface State Carrier‐Dependent Spin–Orbit Torque in Magnetic Topological Insulators

Abstract The topological surface states (TSS) in topological insulators (TIs) can exert strong spin–orbit torque (SOT) on adjacent magnetization, offering great potential in implementing energy‐efficient magnetic memory devices. However, there are large discrepancies among the reported spin Hall angle values in TIs, and its temperature dependence still remains elusive. Here, the spin Hall angle in a modulation‐doped Cr‐Bi x Sb 2− x Te 3 (Cr‐BST) film is quantitatively determined via both transport and optic approaches, where consistent results are obtained. A large spin Hall angle of ≈90 in the modulation‐doped Cr‐BST film is demonstrated at 2.5 K, and the spin Hall angle drastically decreases to 0.3–0.5 as the temperature increases. Moreover, by tuning the top TSS carrier concentration, a competition between the top and bottom TSS in contributing to SOT is observed. The above phenomena can account for the large discrepancies among the previously reported spin Hall angle values and reveal the unique role of TSS in generating SOT.

Che, Xiaoyu↗
DOE OSTI2020

Subtle metastability of the layered magnetic topological insulator MnBi 2 Te 4 from weak interactions

Abstract Layered quantum materials can host interesting properties, including magnetic and topological, for which enormous computational predictions have been done. Their thermodynamic stability is much less visited computationally, which however determines the existence of materials and can be used to guide experimental synthesis. MnBi 2 Te 4 is one of such layered quantum materials that was predicted to be an intrinsic antiferromagnetic topological insulator, and later experimentally realized but in a thermodynamically metastable state. Here, using a combined first-principles-based approach that considers lattice, charge, and spin degrees of freedom, we investigate the metastability of MnBi 2 Te 4 by calculating the Helmholtz free energy for the reaction Bi 2 Te 3 + MnTe → MnBi 2 Te 4 . We identify a temperature range (~500–873 K) in which the compound is stable with respect to the competing binary phases, consistent with experimental observation. We validate the predictions by comparing the calculated specific heats contributed from different degrees of freedom with experimental results. Our findings indicate that the degrees of freedom responsible for the van der Waals interaction, lattice vibration, magnetic coupling, and nontrivial band topology in MnBi 2 Te 4 not only enable emergent phenomena but also play a crucial role in determining its thermodynamic stability. This conclusion lays the foundation for the future computational material synthesis of novel layered systems.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Strongly heat-assisted spin–orbit torque switching of a ferrimagnetic insulator

Ferrimagnetic insulators promise low-power and high-speed spintronic applications, thanks to their insulating nature and fast dynamics near compensation points. In a ferrimagnetic insulator/heavy metal heterostructure, we investigate field- and current-induced magnetization switching at various temperatures and observe distinct magnetization switching behaviors owing to spin-orbit torque (SOT) and heating effect. We have realized SOT switching across the magnetization compensation temperature and discovered that the SOT switching is strongly heat-assisted: the temperature is always above the compensation temperature while the SOT switching happens in our case. Moreover, we show that the SOT efficiency is strongly magnetization-dependent by characterizing the current dependence of SOT efficiency and explaining the anomalous SOT switching back phenomena in the presence of a titled external field. Our results reveal the critical role of Joule heating on the dynamics of magnetic insulators and pave the way for the application of spintronic devices based on magnetic insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Unraveling Emergent Quantum States in Magnetic Topological Insulators using High Pressure Neutron Scattering

This proposal aims to uncover novel quantum phenomena under high pressure and understand the pressure effects on the atomic electronic interactions in magnetic topological materials. This program supports a combined neutron scattering and materials discovery of novel magnetic materials that display the coexistence of magnetism plus other physical phenomena such as a non-trivial electronic band topology under high pressure. The goal of this project is to close a long-standing knowledge gap in quantum materials research by developing a high-pressure neutron scattering (HP-NS) toolbox to systematically determine the magnetic structures and electronic interactions present at high pressure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

The Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Enhanced spin pumping in heterostructures of coupled ferrimagnetic garnets

Spin pumping has significant implications for spintronics, providing a mechanism to manipulate and transport spins for information processing. Understanding and harnessing spin currents through spin pumping is critical for the development of efficient spintronic devices. The use of a magnetic insulator with low damping enhances the signal-to-noise ratio in crucial experiments such as spin-torque ferromagnetic resonance (FMR) and spin pumping. A magnetic insulator coupled with a heavy metal or quantum material offers a more straightforward model system, especially when investigating spin-charge interconversion processes to greater accuracy. This simplicity arises from the absence of unwanted effects caused by conduction electrons unlike in ferromagnetic metals. Here, we investigate the spin pumping in coupled ferrimagnetic (FiM) Y 3 Fe 5 O 12 (YIG)/Tm 3 Fe 5 O 12 (TmIG) bilayers combined with heavy-metal (Pt) using the inverse spin Hall effect. It is observed that magnon transmission occurs at both of the FiMs FMR positions. The enhancement of spin pumping voltage (V sp ) in the FiM garnet heterostructures is observed. The plausible reason might be the interfacial exchange coupling between FiMs. The modulation of V sp is achieved by tuning the bilayer structure. Further, the spin mixing conductance for these coupled systems is found to be ≈ 10 18 m –2 . Furthermore, our findings describe a coupled FiM system for the investigation of magnon coupling providing opportunities for magnonic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Local positional and spin symmetry breaking as a source of magnetism and insulation in paramagnetic EuTi O 3

Here we consider theoretically the paramagnetic phases of EuTiO 3 that represent configurations created by two sets of microscopic degrees of freedom (m-DOFs): positional symmetry breaking due to octahedral rotations and magnetic symmetry breaking due to spin disorder. The effect of these sets of m-DOFs on the electronic structure and properties of the para phases is assessed by considering sufficiently large (super) cells with the required nominal global average symmetry, allowing, however, the $\mathcal{local}$ positional and magnetic symmetries to be lowered. We find that tendencies for local symmetry breaking can be monitored by following total energy lowering in mean-fieldlike density-functional theory, without recourse for strong correlation effects. While most nominally cubic ABO 3 perovskites are known for their symmetry breaking due to the B-atom sublattice, the case of f-electron magnetism in EuTiO 3 is associated with A-sublattice symmetry breaking and its coupling to structural distortions. We find that (i) paramagnetic $\mathcal{cubic}$ EuTiO 3 has an intrinsic tendency for both magnetic and positional symmetry breaking, while paramagnetic $\mathcal{tetragonal}$ EuTiO 3 has only magnetic symmetry lowering and no noticeable positional symmetry lowering with respect to low-temperature antiferromagnetic tetragonal phase. (ii) Properly modeled paramagnetic tetragonal and cubic EuTiO 3 have a nonzero local magnetic moment on each Eu ion, consistent with the experimental observations of local magnetism in the para phases of EuTiO 3 significantly above the Néel temperature. Interestingly, (iii) the local positional distortion modes in the short-range ordered para phases are inherited from the long-range ordered low-temperature antiferromagnetic ground-state phase.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Electrical readout of topological spin order in ultrathin insulators with small magnetization

Probing magnetic order in insulators with small magnetization is particularly challenging in the ultrathin limit, where magnetometry and diffraction lose sensitivity. Here, in this study, we show that topological spin order with vanishingly small magnetization can be electrically detected through an interfacial topological Hall effect in heavy-metal/magnetic-insulator heterostructures. Using Pt coupled to the canted antiferromagnetic insulator hexagonal LuFe⁢O 3 (h-LuFe⁢O 3 ) we observe an unusually large and robust Hall response arising from the transfer of real-space spin topology across the interface via magnetic proximity effect (MPE). This interfacial signal enables detection of magnetic order in h-LuFe⁢O 3 with an extremely small net magnetization (0.025 𝜇 B /Fe), corresponding to Hall-conductivity-magnetization ratio ≈ 2 V −1 , which is one to two orders of magnitude large than other MPE-induced Hall effects and anomalous Hall effects of conducting magnets. This high sensitivity allows detection of magnetic order in h-LuFe⁢O 3 down to a thickness of only 1.5 unit cells. Our results establish an interfacial Hall-based approach for electrically probing topological spin structures in ultrathin insulators and the related interfaces, enabling access to magnetic order in regimes where conventional probes fail.

Topological Hall Effect↗
DOE OSTI2024

Limiting current in a collisional crossed-field gap

Crossed-field devices are often used in pulsed power and high-power microwave applications. Previous studies derived closed-form solutions for the limiting current of a vacuum crossed-field system, corresponding to the maximum permissible current for laminar flow, below and above the Hull cutoff B H for magnetic insulation. We extend these studies by introducing collision frequency into the electron force law as a friction term to derive the limiting current in a collisional crossed-field gap. The resulting solution recovers the vacuum crossed-field case in the limit of no collisions and the collisional space-charge limited current with general initial velocity for magnetic field B → 0. In the limit of infinite collisions, we obtain a crossed-field equivalent to the Mott–Gurney law for the maximum current permissible in a collisional, nonmagnetic diode. When the collision frequency ν is less than the electron cyclotron frequency Ω, increasing initial velocity makes the critical current nonmonotonic with increasing ν with the critical current higher at B = B H for ν = Ω. As for a misaligned crossed-field gap where a component of the magnetic field was introduced parallel to the electric field across the gap, magnetic insulation is eliminated and the discontinuity at B = B H for limiting current observed in a vacuum crossed-field gap vanishes. As B → ∞, the limiting current approaches a constant that depends on the initial velocity and the collision frequency.

Breen, Lorin I.↗
DOE OSTI2025

Low damping (111) oriented lithium aluminum ferrite thin films for spin wave applications

Spin wave-based spintronics are an alternative to conventional electronics due to their potential for efficient energy consumption, improved processing speed, and smaller device dimensions. Low damping magnetic insulators provide the medium for efficient propagation of spin waves for information transfer. Here, we have synthesized by pulsed laser deposition epitaxial spinel structure ferrite thin films of Li 0.5 (Al 1.0 Fe 1.5 )O 4 (LAFO) on (111)-oriented MgAl 2 O 4 that support isotropic magnon propagation in the film plane. Our ferromagnetic resonance measurements show low magnetic damping with a typical Gilbert damping parameter of α = 0.006 and weak-spin–orbit coupling with g = 2.02. These films have low effective magnetization, μ o M eff = 20 mT, similar to that of yttrium iron garnet, the gold standard of low loss magnetic insulators. Our findings show that LAFO is a good candidate as a spin wave medium since it can be grown at low temperatures in different crystal orientations.

Takana, Lerato [Stanford Univ., CA (United States)↗