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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

FLAMES─Fast, Low-Storage, Accurate, and Memory-Efficient Adaptive Sampling─Approach to Resolve Spatially Dependent Dynamics of Molecular Liquids

Many critical phenomena in soft matter occur at large length scales, necessitating the resolution of their structure and dynamics at low wavenumbers. However, resolving wavenumber-dependent dynamics computationally via molecular dynamics simulations presents significant challenges, as these phenomena span several orders of magnitude in both time and length scales, resulting in high computational costs and memory demands. Here, this work highlights the computational and memory challenges associated with analyzing molecular trajectories in reciprocal space and demonstrates a method to address them. We introduce FLAMESFast, Low-storage, Accurate, and Memory-Efficient adaptive Sampling, which is a direct method for calculation of structure factors, allowing us to select only the required number of wavevectors for binning. We also use wavenumber-dependent time steps to extract dynamics. Our FLAMES approach effectively mitigates computational and memory/storage bottlenecks. We demonstrate the method using simulations of a model system, liquid octane, at various temperatures. Comparisons with experimental data and real space computation show that the FLAMES technique achieves high accuracy in resolving temperature- and spatially dependent dynamics while being significantly more computationally efficient and requiring less memory and storage than methods based on a uniform wavevector grid and fixed temporal spacing.

Chen, Guang [Argonne National Laboratory (ANL), Ar↗
NASA NTRS2000

Implementation of Ferroelectric Memories for Space Applications

Ferroelectric random access semiconductor memories (FeRAMs) are an ideal nonvolatile solution for space applications. These memories have low power performance, high endurance and fast write times. By combining commercial ferroelectric memory technology with radiation hardened CMOS technology, nonvolatile semiconductor memories for space applications can be attained. Of the few radiation hardened semiconductor manufacturers, none have embraced the development of radiation hardened FeRAMs, due a limited commercial space market and funding limitations. Government funding may be necessary to assure the development of radiation hardened ferroelectric memories for space applications.

Philpy, Stephen C.↗
DOE OSTI2023

Runtime extension for neural network training with heterogeneous memory

Systems, apparatuses, and methods for managing buffers in a neural network implementation with heterogeneous memory are disclosed. A system includes a neural network coupled to a first memory and a second memory. The first memory is a relatively low-capacity, high-bandwidth memory while the second memory is a relatively high-capacity, low-bandwidth memory. During a forward propagation pass of the neural network, a run-time manager monitors the usage of the buffers for the various layers of the neural network. During a backward propagation pass of the neural network, the run-time manager determines how to move the buffers between the first and second memories based on the monitored buffer usage during the forward propagation pass. As a result, the run-time manager is able to reduce memory access latency for the layers of the neural network during the backward propagation pass.

Mappouras, Georgios↗
DOE OSTI2015

Electrical control of Co/Ni magnetism adjacent to gate oxides with low oxygen ion mobility

We investigate the electrical manipulation of Co/Ni magnetization through a combination of ionic liquid and oxide gating, where HfO{sub 2} with a low O{sup 2−} ion mobility is employed. A limited oxidation-reduction process at the metal/HfO{sub 2} interface can be induced by large electric field, which can greatly affect the saturated magnetization and Curie temperature of Co/Ni bilayer. Besides the oxidation/reduction process, first-principles calculations show that the variation of d electrons is also responsible for the magnetization variation. Our work discloses the role of gate oxides with a relatively low O{sup 2−} ion mobility in electrical control of magnetism, and might pave the way for the magneto-ionic memory with low power consumption and high endurance performance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x 5 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 1806 phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ,106 s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

42 ENGINEERING↗
DOE OSTI2019

Shape memory alloy engine for high efficiency low-temperature gradient thermal to electrical conversion

More than half of the energy generated worldwide is lost as unused thermal energy because of the lack of efficient methodology for harnessing the low-grade heat. In this paper, we demonstrate that shape-memory alloy can be an effective mechanism for recovering low-grade heat. Shape memory alloys exhibit thermally induced martensite to austenite phase transformation and super-elasticity (stress-induced martensitic transformation). Employing these two characteristics, we demonstrate a thermal engine for harnessing waste energy through all modes of heat transfer: convection, conduction, and radiation. In this work, we performed material and heat transfer analysis for achieving high frequency, sustainable and efficient operation of our engine. An optimized shape memory alloy engine generated 36 W per kilogram or 234 kW of electricity per cubic meter of active material. A continuous three-day operation of several SMA engines could generate 7.2 kWh of electricity when installed on a 500 m long hot pipe network. This generated power can potentially reduce the carbon footprint by 5.1 kg of CO 2 illustrating the promise of this technology for addressing climate change.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co] N

Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent studies have revealed efficient out-of-plane spin-orbit torques (SOTs) in a variety of materials for field-free type-z SOT switching. Here, we report on the corresponding type-x configuration, showing significant in-plane unconventional spin polarizations from sputtered ultrathin [Pt/Co] N , which are either highly textured on single crystalline MgO substrates or randomly textured on SiO 2 coated Si substrates. The unconventional spin currents generated in the low-dimensional Co films result from the strong orbital magnetic moment, which has been observed by X-ray magnetic circular dichroism (XMCD) measurement. The x-polarized spin torque efficiency reaches up to −0.083 and favors complete field-free switching of CoFeB magnetized along the in-plane charge current direction. Micromagnetic simulations additionally demonstrate its lower switching current than type-y switching, especially in narrow current pulses. Our work provides additional pathways for electrical manipulation of spintronic devices in the pursuit of high-speed, high-density, and low-energy non-volatile memory.

42 ENGINEERING↗
DOE OSTI2022

Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices

Metal halide perovskite-based materials have emerged over the past few decades as remarkable solution-processable opto-electronic materials with many intriguing properties and potential applications. Notably, these emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, we review recent progress towards memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality.

14 SOLAR ENERGY↗
DOE OSTI2023

Progressive Tree-Based Compression of Large-Scale Particle Data

Scientific simulations and observations using particles have been creating large datasets that require effective and efficient data reduction to store, transfer, and analyze. However, current approaches either compress only small data well while being inefficient for large data, or handle large data but with insufficient compression. Toward effective and scalable compression/decompression of particle positions, we introduce new kinds of particle hierarchies and corresponding traversal orders that quickly reduce reconstruction error while being fast and low in memory footprint. Our solution to compression of large-scale particle data is a flexible block-based hierarchy that supports progressive, random-access, and error-driven decoding, where error estimation heuristics can be supplied by the user. For low-level node encoding, we introduce new schemes that effectively compress both uniform and densely structured particle distributions. Our proposed methods thus target all three phases of a tree-based particle compression pipeline, namely tree construction, tree traversal, and node encoding. In conclusion, the improved efficacy and flexibility of these methods over existing compressors are demonstrated through extensive experimentation, using a wide range of scientific particle datasets.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2014

Effect of niobium addition on the martensitic transformation and magnetocaloric effect in low hysteresis NiCoMnSn magnetic shape memory alloys

The effect of Nb substitution for Ni in Ni{sub 45}Co{sub 5}Mn{sub 40}Sn{sub 10} magnetic shape memory alloys on their magnetic properties, martensitic transformation characteristics, transformation hysteresis, and magnetocaloric properties was studied using wavelength-dispersive X-ray spectroscopy, differential scanning calorimetry, and the temperature and field dependence of the magnetization. Ni{sub 45}Co{sub 5}Mn{sub 40}Sn{sub 10} alloy has a very low transformation hysteresis; however, the martensitic transformation temperatures are notably above room temperature, which is not desirable for magnetic refrigeration applications. In this study, small quantities of Nb substitution were shown to drastically shift the transformation temperatures to lower temperatures, at a rate of 68 K/at. % Nb, which is needed for household refrigeration. The austenite Curie temperature also decreased with increasing Nb content. However, a decrease in the latent heat of the martensitic transition was observed, which negatively affects the magnetic field-induced adiabatic temperature change capability. Still, the relatively large transformation entropy and the low transformation hysteresis make the Nb-doped Ni{sub 45}Co{sub 5}Mn{sub 40}Sn{sub 10} alloys potential candidates for solid state refrigeration near room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Towards scaling community detection on distributed-memory heterogeneous systems

Distributed multi-GPU systems pose significant challenges and opportunities for efficient execution of parallel applications. Graph algorithms are generally characterized by irregular memory accesses, low computation to communication ratios, and load balancing problems that are especially hard to address on multi-GPU systems. Graph community detection is an important problem in the emerging domain of graph analytics with numerous applications. In this paper, we present our ongoing work on distributed-memory multi-GPU implementation for graph community detection. Our work parallelizes the widely used (albeit serial) Louvain method on distributed multi-GPU platforms. Supported by an extensive set of experiments on a multi-GPU enabled supercomputer (OLCF Summit) and a single compute node (Nvidia DGX-2®), we demonstrate competitive performance to existing distributed-memory CPU-based implementation, and up to 6.5 better results than Nvidia RAPIDS® CUGRAPH. To the best of our knowledge, this work represents the first effort for community detection on distributed multi-GPU systems. Our approach and related findings can be extended to numerous other iterative graph algorithms on multi-GPU systems.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2018

Influence of a Nitrogen Admixture on the Anomalous Memory Effect in the Breakdown of Low-Pressure Argon in a Long Discharge Tube

The memory effect (the dependence of the dynamic breakdown voltage U{sub b} on the time interval τ between voltage pulses) in pulse-periodic discharges in pure argon and the Ar + 1%N{sub 2} mixture was studied experimentally. The discharge was ignited in a 2.8-cm-diameter tube with an interelectrode distance of 75 cm. The measurements were performed at gas pressures of P = 1, 2, and 5 Torr and discharge currents in a steady stage of the discharge of I = 20 and 56 mA. Breakdown was produced by applying positive-polarity voltage pulses, the time interval between pulses being in the range of τ = 0.5–40 ms. In this range of τ values, a local maximum (the anomalous memory effect) was observed in the dependence U{sub b}(τ). It is shown that addition of nitrogen to argon substantially narrows the range of τ values at which this effect takes place. To analyze the measurement results, the plasma parameters in a steady-state discharge (in both pure argon and the Ar + 1%N{sub 2} mixture) and its afterglow were calculated for the given experimental conditions. Analysis of the experimental data shows that the influence of the nitrogen admixture on the shape of the dependence U{sub b}(τ) is, to a large extent, caused by the change in the decay rate of the argon afterglow plasma in the presence of a nitrogen admixture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

Science & Technology - Other Topics↗
DOE OSTI2015

Perpendicular magnetic anisotropy of amorphous [CoSiB/Pt]{sub N} thin films

Materials with perpendicular magnetic anisotropy (PMA) have been intensively studied for high-density nonvolatile memory such as spin-transfer-torque magnetic random access memory with low switching current density and high thermal stability. Compared with crystalline PMA multilayers, considerable works have been done on amorphous PMA multilayers because the amorphous materials are expected to have lower pinning site density as well as smaller domain wall width. This study is an overview of the PMA properties of amorphous [CoSiB/Pt]{sub N} multilayers with varying N, where the energy contribution is changed from domain wall energy to magnetostatic energy around N = 6. By measuring the field-induced domain wall motion, we obtain the creep exponent of μ = 1/4. These results in the amorphous PMA multilayers of [CoSiB/Pt]{sub N} demonstrate possible potential as a free layer for PMA-based memory devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

FPGA Acceleration of GCN in Light of the Symmetry of Graph Adjacency Matrix

Graph Convolutional Neural Networks (GCNs) are widely used to process large-scale graph data. Different from deep neural networks (DNNs), GCNs are sparse, irregular, and unstructured, posing unique challenges to hardware acceleration with regular processing elements (PEs). In particular, the adjacency matrix of a GCN is extremely sparse, leading to frequent but irregular memory access, low spatial/temporal data locality and poor data reuse. Furthermore, a realistic graph usually consists of unstructured data (e.g., unbalanced distributions), creating significantly different processing times and imbalanced workload for each node in GCN acceleration. To overcome these challenges, we propose an end-to-end hardware-software co-design to accelerate GCNs on resource-constrained FPGAs with the features including: (1) A custom dataflow that leverages symmetry along the diagonal of the adjacency matrix to accelerate feature aggregation for undirected graphs. We utilize either the upper or the lower triangular matrix of the adjacency matrix to perform aggregation in GCN to improve data reuse. (2) Unified compute cores for both aggregation and transform phases, with full support to the symmetry-based dataflow. These cores can be dynamically reconfigured to the systolic mode for transformation or as individual accumulators for aggregation in GCN processing. (3) Preprocessing of the graph in software to rearrange the edges and features to match the custom dataflow. This step improves the regularity in memory access and data reuse in the aggregation phase. Moreover, we quantize the GCN precision from FP32 to INT8 to reduce the memory footprint without losing the inference accuracy. We implement our accelerator design in Intel Stratix10 MX FPGA board with HBM2, and demonstrate 1.3x-110.5x improvement in end-to-end GCN latency as compared to the state-of the-art FPGA implementations, on the graph datasets of Cora, Pubmed, Citeseer and Reddit.

Nair, Gopikrishnan R.↗
DOE OSTI2019

Tuning the Photoresponse of Nano-Heterojunction: Pressure-Induced Inverse Photoconductance in Functionalized WO 3 Nanocuboids

Inverse photoconductivity (IPC) is a unique photoresponse behavior that exists in few photoconductors in which electrical conductivity decreases with irradiation, and has great potential applications in the development of photonic devices and nonvolatile memories with low power consumption. However, it is still challenging to design and achieve IPC in most materials of interest. In this study, pressure-driven photoconductivity is investigated in n-type WO3 nanocuboids functionalized with p-type CuO nanoparticles under visible illumination and an interesting pressure-induced IPC accompanying a structural phase transition is found. Native and structural distortion induced oxygen vacancies assist the charge carrier trapping and favor the persistent positive photoconductivity beyond 6.4 GPa. The change in photoconductivity is mainly related to a phase transition and the associated changes in the bandgap, the trapping of charge carriers, the WO6 octahedral distortion, and the electron–hole pair recombination process. A unique reversible transition from positive to inverse photoconductivity is observed during compression and decompression. The origin of the IPC is intimately connected to the depletion of the conduction channels by electron trapping and the chromic property of WO3. This synergistic rationale may afford a simple and powerful method to improve the optomechanical performance of any hybrid material.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

CeO 2 Doping of Hf 0.5 Zr 0.5 O 2 Thin Films for High Endurance Ferroelectric Memories

Ferroelectric switching is demonstrated in CeO 2 -doped Hf 0.5 Zr 0.5 O 2 (HZCO) thin films with application in back-end-of-line compatible embedded memories. At low cerium oxide doping concentrations (2.0–5.6 mol%), the ferroelectric orthorhombic phase is stabilized after annealing at temperatures below 400 °C. HZCO ferroelectrics show reliable switching characteristics beyond 10 11 cycles in TiN/HZCO/TiN capacitors, several orders of magnitude greater than identically processed Hf 0.5 Zr 0.5 O 2 (HZO) capacitors, without sacrificing polarization and retention. Internal photoemission and photoconductivity experiments show that CeO 2 -doping introduces in-gap states in HZCO that are nearly aligned with TiN Fermi level, facilitating electron injection through these states. Furthermore, the enhanced average bulk conduction, which may lead to more uniform thermal dissipation in the HZCO films, delays irreversible degradation via breakdown that leads to device failure after repeated programming cycles.

36 MATERIALS SCIENCE↗