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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2021

Breakdown and Self-healing in Tantalum Capacitors

Reliability of tantalum capacitors depends on the efficiency of self-healing that restores parts after breakdown. In this work, different types of polymer and MnO2 cathode capacitors have been tested for scintillation breakdown using a constant current stress (CCS) technique modified to allow detection of amplitudes and duration of current spikes. Monitoring of leakage currents with time under bias is used to assess the effect of scintillations. The appearance and composition of damaged sites have been examined after deprocessing and cross-sectioning. Thermal processes during scintillations have been analyzed, a mechanism of breakdown based on growth of conductive filaments in the dielectric suggested, and self-healing processes in polymer and MnO2 cathode capacitors discussed.

tantalum capacitor↗
NASA NTRSDate not supplied

Degradation of Aluminum and Tantalum Wet Electrolytic Capacitors during High Temperature Storage

Aluminum electrolytic capacitors (AEC) are available to higher ranges of capacitance and voltage compared to tantalum electrolytic capacitors (TEC). However, evaporation of the electrolyte during operation or storage of conventional AEC that is accelerated with temperature does not allow use of these parts in space electronics. Instead, for systems requiring large value capacitors and high operating voltages, designers must use banks of TECs that increases substantially the size and weight of electronic modules. Development of hermetically sealed AECs might be beneficial for space systems provided the necessary reliability is assured. Increase in leakage current during storage of AEC is well known and is often explained by dissolution of aluminum oxide in electrolyte. However, other possible mechanisms of this effect have not been discussed. Although hermetically sealed TEC have been used in space systems for years, there is a lack of information about the effects of storage on their characteristics that is of great interest as a comparison for aluminum capacitors. This work explores degradation of AC characteristics (capacitance, dissipation factor, and equivalent series resistance) and DC characteristics (leakage and absorption currents) in different types of aluminum and tantalum hermetically sealed capacitors during long-term storage at high temperatures (100 °C, 125 °C, and 150 °C). It is shown that leakage currents are degrading in both types of capacitors, but this degradation is reversible after bias application. Mechanisms of degradation are discussed, and explanations based on the processes common for both types of capacitors are suggested. Problems associated with assessments of hermeticity and evaporation of the electrolyte in hermetically sealed capacitors are analyzed.

Alexander Teverovsky↗
NASA NTRS1971

Voltage regulator dissipates minimal power and functions as a voltage divider

Regulator requires minimum amount of power for voltage division and it is not required continuously. The only power loss, except for regulating purposes, is that needed to provide for imbalances in load current requirements. For balanced loads, only leakage current flows through regulating transistors.

Hester, H. B.↗
NASA NTRS2004

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Lebron-Velilla, Ramon C.↗
NASA NTRSDate not supplied

Stress Testing of Chip Aluminum Polymer Capacitors

Layered aluminum polymer capacitors (APC) may be viable replacements to current chip tantalum capacitors due to their lower ESR, weight, and smaller size. So far, there is a lack of information regarding the reliability of these parts. Available technical literature is mostly related to the effect on humidity. Although APCs have a limited moisture resistance, it may be contained to the level sufficient for space applications. In this work, seven types of commercial APCs manufactured by four vendors and rated to voltages from 6.3 to 35 V were used to evaluate reliability of the parts under environmental stresses and highly accelerated life tests. Characteristics of the parts, including breakdown voltages, the level of anomalous charging currents (ACC), capacitance, DF, ESR and leakage currents were measured in the process of storage at high-temperatures (from 100 to 150 °C) and high humidity at 85 °C. Monitored highly accelerated life tests have been carried out at temperatures of 85 °C and 125 °C and voltages varying from 1.2 to 1.9 times the rated voltage. Degradation processes and reliability of APCs have been analyzed and compared to polymer tantalum capacitors.

Alexander Teverovsky↗
NASA NTRS2024

Evaluation of Aluminum Polymer Capacitors for Space Applications

Layered aluminum polymer capacitors (APC) may be viable replacements to currently used chip tantalum capacitors due to their lower ESR, weight, and smaller size. So far, there is a lack of information regarding the reliability of these parts. Available technical literature is mostly related to the effect of humidity. Although APCs have a limited moisture resistance, it may be contained to the level sufficient for space applications. This work analyzes construction and characteristics of seven types of commercial APCs manufactured by four vendors and rated to voltages from 6.3 to 35 V were analyzed. Their reliability under environmental stresses and highly accelerated life tests was assessed in the range of temperatures and voltages to determine reliability acceleration factors. For this purpose, characteristics of the parts, including breakdown voltages, the level of anomalous charging currents (ACC), capacitance, DF, ESR and leakage currents were measured in the process of storage at high-temperatures (from 100 to 150 °C) and high humidity at 85 °C. Monitored highly accelerated life tests have been carried out at temperatures of 85 °C and 125 °C and voltages varying from 1.2 to 1.9 times the rated voltage. Degradation processes and reliability of APCs have been compared to polymer tantalum capacitors.

Alexander A Teverovsky↗
NASA NTRS2014

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Toftul, Alexandra↗
NASA NTRS2009

186 K Operation of Terahertz Quantum-Cascade Lasers Based on a Diagonal Design

Resonant-phonon terahertz quantum-cascade lasers operating up to a heat-sink temperature of 186 K are demonstrated. This record temperature performance is achieved based on a diagonal design, with the objective to increase the upper-state lifetime and therefore the gain at elevated temperatures. The increased diagonality also lowers the operating current densities by limiting the flow of parasitic leakage current. Quantitatively, the diagonality is characterized by a radiative oscillator strength that is smaller by a factor of two from the least of any previously published designs. At the lasing frequency of 3.9 THz, 63 mW of peak optical power was measured at 5 K, and approximately 5 mW could still be detected at 180 K.

Kumar, Sushil↗
NASA NTRS1972

A piezoelectrically actuated ball valve

Bimorph strip composed of two layers of poled piezoelectric ceramic material closes and opens valve. Strip performs like capacitator, allowing initial inrush of current when valve is energized and then only small leakage current flows as valve remains energized.

Erwin, L. R.↗
NASA NTRS1970

Circuit minimizes current drain caused by neon indicator lamps

Circuit lights neon lamp by back leakage current of the driving transistor, rather than by the transistors saturation or ''on-state'' current, thereby eliminating lowering of the voltage necessary for indication. Circuit has operating speed greater than indication circuit using a saturation principle and aids in power rationing.

Drylie, C. D.↗
NASA NTRS2003

Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs

Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler

THz frequencies↗
NASA NTRS2016

Radiation Tolerance Studies of Long Wavelength Infrared InAs/GaSb Detectors

In this work we investigated the effect of proton irradiation on the performance of long wavelength infrared (LWIR) InAs/GaSb photodiodes (λ(sub c) = 10.2µm) based on the complementary barrier infrared detector (CBIRD) design. We found that irradiation with 68MeV protons up to the total ionizing dose TID = 200 kRad results in only small (about 15%) decrease of the Quantum Efficiency and does not increase the operational bias of the photodiodes. However, the irradiation causes a significant increase of the dark current from j(sub d) = 5x10(exp -5) A/sq cm at V(sub b) = 0.1V and T = 80K to j(sub d) = 6x10(exp -3) A/sq cm at TID = 200 kRad. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by the trap assisted tunneling processes in the proton displacement damage areas near the device sidewalls.

InAs/GaSb photodiodes↗
NASA NTRS1991

Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates

Ammonium-sulfide (NH4)2S treated gates have been employed in the fabrication of GaAs MESFETs that exhibit a remarkable reduction in subthreshold leakage current. A greater than 100-fold reduction in drain current minimum is observed due to a decrease in Schottky gate leakage. The electrical characteristics have remained stable for over a year during undesiccated storage at room temperature, despite the absence of passivation layers.

Neudeck, P. G.↗
NASA NTRS2021

Breakdown in Tantalum Capacitors

Failures in tantalum capacitors can be considered as a time-dependent-breakdown and reliability of all types of capacitors, including wet, MnO2 and polymer cathode parts, depends on the efficiency of self-healing that can mend parts after breakdown. A mechanism of self-healing in MnO2 capacitors is associated with oxygen reduction in the cathode layer and isolation of the breakdown site with high-resistive Mn2O3/Mn3O4 compositions. Although this mechanism is commonly accepted, details of self-healing have not been analyzed sufficiently yet, and the effects of scintillations on behavior of the parts has not been fully understood. There is a lack of data on the self-healing efficiency in different lots of capacitors. Even less is known about self-healing in polymer tantalum capacitors. In this work, different types of polymer and MnO2 capacitors have been tested for scintillation breakdown using a constant current stress (CCS) technique modified to allow detection of the amplitudes and durations of current spikes during breakdown. Characteristics of the parts and in particular leakage currents were measured to assess the efficiency of self-healing and improve screening processes for tantalum capacitors. Damaged sites were localized using infrared camera and their appearance analyzed after deprocessing and crosssectioning. Thermal effects during scintillations have been modeled, self-healing processes in polymer and MnO2 cathode capacitors discussed, and mechanisms of breakdown based on the growth of conductive filaments in the dielectric suggested.

tantalum polymer capacitors↗
NASA NTRS2000

2D Quantum Mechanical Study of Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗
NASA NTRS2004

Soft-Fault Detection Technologies Developed for Electrical Power Systems

The NASA Glenn Research Center, partner universities, and defense contractors are working to develop intelligent power management and distribution (PMAD) technologies for future spacecraft and launch vehicles. The goals are to provide higher performance (efficiency, transient response, and stability), higher fault tolerance, and higher reliability through the application of digital control and communication technologies. It is also expected that these technologies will eventually reduce the design, development, manufacturing, and integration costs for large, electrical power systems for space vehicles. The main focus of this research has been to incorporate digital control, communications, and intelligent algorithms into power electronic devices such as direct-current to direct-current (dc-dc) converters and protective switchgear. These technologies, in turn, will enable revolutionary changes in the way electrical power systems are designed, developed, configured, and integrated in aerospace vehicles and satellites. Initial successes in integrating modern, digital controllers have proven that transient response performance can be improved using advanced nonlinear control algorithms. One technology being developed includes the detection of "soft faults," those not typically covered by current systems in use today. Soft faults include arcing faults, corona discharge faults, and undetected leakage currents. Using digital control and advanced signal analysis algorithms, we have shown that it is possible to reliably detect arcing faults in high-voltage dc power distribution systems (see the preceding photograph). Another research effort has shown that low-level leakage faults and cable degradation can be detected by analyzing power system parameters over time. This additional fault detection capability will result in higher reliability for long-lived power systems such as reusable launch vehicles and space exploration missions.

Button, Robert M.↗