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At least 91 records · Page 5

The effect of neutron irradiation on the properties of AlGaAs/GaAs laser diodes

The effects of neutron irradiation on several properties of both single and multiple stripe laser diodes have been examined. Prior to fast neutron irradiation, total light output as a function of laser current, threshold current, near-field pattern, far-field pattern, and laser output wavelength spectra were measured at room temperature. These measurements were then repeated at intermittent neutron fluence levels. It was observed that the threshold current increased with neutron fluence for all devices examined. In contrast, neutron irradiation had only an indirect effect on the remainder of the laser diode properties in that the higher currents required for operation after irradiation caused variations in these properties.

Barnes, C. E.↗

SEM and TEM Observation of the Surfaces of the Fine-Grained Particles Retrieved from the Muses-C Regio on the Asteroid 25413 Itokawa

Surface materials on airless solar system bodies exposed to interplanetary space are gradually changed their visible to near-infrared reflectance spectra by the process called "space weathering", which makes the spectra darker and redder. Hapke et al. proposed a model of space weathering: vapor deposition of nanophase reduced iron (npFe(sup 0)) on the surfaces of the grains within the very surface of lunar regolith. This model has been proved by detailed observation of the surfaces of the lunar soil grains by transmission electron microscope (TEM). They demonstrated that npFe(sup 0) was formed by a combination of vapor deposition and irradiation effects. In other words, both micrometeorite impacts and irradiation by solar wind and galactic cosmic ray play roles on the space weathering on the Moon. Because there is a continuum of reflectance spectra from those of Q-type asteroids (almost the same as those of ordinary chondrites) to those of S-type asteroids, it is strongly suggested that reflectance spectra of asteroids composed of ordinary chondrite-like materials were modified over time to those of S-type asteroids due to space weathering. It is predicted that a small amount of npFe(sup 0) on the surface of grains in the asteroidal regolith composed of ordinary chondrite-like materials is the main agent of asteroidal space weathering.

Noguchi, T.↗

Recovery of Electron/Proton Radiation-Induced Defects in n+p AlInGaP Solar Cell by Minority-Carrier Injection Annealing

A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.

Lee, H. S.↗

Effect of electron irradiation in vacuum on FEP-A silicon solar cell covers

The effect of irradiation on the light transmittance of ethylene-propylene-A (FEP-A) was investigated by measuring the short-circuit current of the cells after each of several electron dose increments, immediately after total irradiation, and 16 hours after total irradiation. Results indicated no apparent overall loss in transmission due to irradiation of FEP-A. However, filter wheel measurements revealed a 'darkening' of the FEP-A at the blue end of the spectrum. Some embrittlement of the FEP-A occurred at an accumulated dose of 67,500,000 rads.

Marsik, S. J.↗

Precise ground-based solar photometry and variations of total irradiance

Several empirical models of sunspot and facular irradiance effects were tested by assessing the degree of correlation between variations in the total solar irradiance, as measured by the active cavity radiometer irradiance monitor on the SMM and the measures of magnetic activity on the solar disk. This was done by analyzing images made during 21 days between June 20 and July 14, 1988. The paper also describes the instruments and the methods used to gather the ground-based photometric images, as well as the analysis procedure.

Chapman, G. A.↗