Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “integrated circuit modeling”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2025

Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation

This work compares design layouts and circuit simulations of the next two prototype NASA Glenn SiC JFET-R IC fabrication runs designated “IC Gen. 12” and “IC Gen. 13”. Even though both generations employ the same physical JFET gate length and chip size, SPICE simulations predict drastic improvements to IC capabilities and performance metrics for Gen. 13 over Gen. 12. The main factors behind simulated performance differences are thinner n-channel layer leading to reduced operating voltages and switch to stepper-based photolithography that enables roughly 4-fold layout area reductions for functionally identical circuit blocks.

Silicon Carbide↗
DOE OSTI2022

Integrable nonunitary quantum circuits

Here we show that the integrable Lindblad superoperators found recently can be used to build integrable nonunitary quantum circuits with two-site gates by demonstrating that the R(SIC) matrices are completely positive and trace preserving. Using the bond-site transformation, we obtain the corresponding integrable nonunitary quantum circuits with three-site gates. When restricted to the diagonals of the density matrix, these quantum models reduce to integrable classical cellular automata. This approach may pave the way for a systematic construction of circuits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1983

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗
DOE OSTI2020

Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XXI

This volume contains 12 sessions, 28 papers and 26 presentations on the following topics: Photonic Integrated Circuits and Plasmonic Sensing; Advancs in CBE Signature Modeling and Sensor Algorithms I; Standoff Sensing of CBRNE Hazards I; Standoff Sensing of CBRNE Hazards II; Advances in CBE Signature Modeling and Sensor Algorithms II; Biological Hazard Sensing; Chemical Hazard Sensing; Joint Session with Conferences 11390 and 11416: Spectroscopy for CBRNE Detection and Warning; Radiological and Nuclear Sensing; Explosive Material Sensing; Poster Session.

47 OTHER INSTRUMENTATION↗
NASA NTRS1999

Design of the Wind Tunnel Model Communication Controller Board

The NASA Langley Research Center's Wind Tunnel Reinvestment project plans to shrink the existing data acquisition electronics to fit inside a wind tunnel model. Space limitations within a model necessitate a distributed system of Application Specific Integrated Circuits (ASICs) rather than a centralized system based on PC boards. This thesis will focus on the design of the prototype of the communication Controller board. A portion of the communication Controller board is to be used as the basis of an ASIC design. The communication Controller board will communicate between the internal model modules and the external data acquisition computer. This board is based around an Field Programmable Gate Array (FPGA), to allow for reconfigurability. In addition to the FPGA, this board contains buffer Random Access Memory (RAM), configuration memory (EEPROM), drivers for the communications ports, and passive components.

Wilson, William C.↗
DOE OSTI2024

Unraveling the Highly Plastic Behavior of ALD-Aluminum Oxide Encapsulations by Small-Scale Tensile Testing

We present a study directly measuring the electron-beam-induced plasticity of amorphous Al 2 O 3 coatings. Core–shell nanostructures are employed as small-scale model systems for two-dimensional coatings made by atomic layer deposition (ALD). Copper nanowires (NWs) are used as substrates for ALD deposition, representing a model system for interconnects commonly found in integrated circuits. Experiments are performed in situ in a transmission electron microscope (TEM) and further analyzed with electron energy loss spectroscopy (EELS). Our in situ TEM tensile experiments reveal the highly plastic behavior of the ALD shell, which withstands a maximum strain of 188%. Comparable samples under beam-off conditions show a brittle fracture, which underlines the effect of electron irradiation. The electron-beam-activated bond switching within the amorphous network enables compensation of the applied tensile strain, leading to viscous flow. By incorporating an intermediate nanocrystalline layer within the Al 2 O 3 shell, the plasticity is suppressed and brittle fracture occurs. This work directly demonstrates the tuning of mechanical properties in amorphous ALD structures through electron irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Quantum Time Dynamics Mediated by the Yang–Baxter Equation and Artificial Neural Networks

Quantum computing shows great potential, but errors pose a significant challenge. This study explores new strategies for mitigating quantum errors using artificial neural networks (ANNs) and the Yang–Baxter equation (YBE). Unlike traditional error mitigation methods, which are computationally intensive, we investigate artificial error mitigation. We developed a novel method that combines ANNs for noise mitigation combined with the YBE to generate noisy data. This approach effectively reduces noise in quantum simulations, enhancing the accuracy of the results. The YBE rigorously preserves quantum correlations and symmetries in spin chain simulations in certain classes of integrable lattice models, enabling effective compression of quantum circuits while retaining linear scalability with the number of qubits. This compression facilitates both full and partial implementations, allowing the generation of noisy quantum data on hardware alongside noiseless simulations using classical platforms. By introducing controlled noise through the YBE, we enhance the data set for error mitigation. We train an ANN model on partial data from quantum simulations, demonstrating its effectiveness in mitigating errors in time-evolving quantum states, providing a scalable framework to enhance quantum computation fidelity, particularly in noisy intermediate-scale quantum (NISQ) systems. We demonstrate the efficacy of this approach by performing quantum time dynamics simulations using the Heisenberg XY Hamiltonian on real quantum devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1974

Quasi-perfect FIFO: Synchronous or asynchronous with application in controller design for the UNICON laser memory

The first-in-first-out memory buffer (FIFO), is an elastic digital memory whose main application is in data buffering between devices operating at different rates. Data written into the top is moved autonomously down toward the bottom of the FIFO to the lowest unoccupied location, and data read from the bottom of the FIFO will cause data from the top to move autonomously down toward the bottom. The FIFO is available in MOS LSI asynchronous form with data rate in the 1 MHz region. The FIFO described yields a simple high-speed iterative implementation, either synchronous of asynchronous. Because of this simple iterative structure, the FIFO is expandable in both number of words and bits per word, and it is attractive from the viewpoint of integrated-circuit production. For the synchronous FIFO, a model was built and successfully used in the controller for the UNICON laser memory. For the asynchronous FIFO, a model was built and also successfully used in a high-performance magnetic tape controller.

Lim, R. S.↗
NASA NTRS1991

Software Engineering Laboratory (SEL) cleanroom process model

The Software Engineering Laboratory (SEL) cleanroom process model is described. The term 'cleanroom' originates in the integrated circuit (IC) production process, where IC's are assembled in dust free 'clean rooms' to prevent the destructive effects of dust. When applying the clean room methodology to the development of software systems, the primary focus is on software defect prevention rather than defect removal. The model is based on data and analysis from previous cleanroom efforts within the SEL and is tailored to serve as a guideline in applying the methodology to future production software efforts. The phases that are part of the process model life cycle from the delivery of requirements to the start of acceptance testing are described. For each defined phase, a set of specific activities is discussed, and the appropriate data flow is described. Pertinent managerial issues, key similarities and differences between the SEL's cleanroom process model and the standard development approach used on SEL projects, and significant lessons learned from prior cleanroom projects are presented. It is intended that the process model described here will be further tailored as additional SEL cleanroom projects are analyzed.

Green, Scott↗
NASA NTRS2000

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

Kuczmarski, Maria A.↗
DOE OSTI2020

Study of Fluctuations in Undulator Radiation in the IOTA Ring at Fermilab

We study turn-by-turn fluctuations in the number of emitted photons in an undulator, installed in the IOTA electron storage ring at Fermilab, with an InGaAs PIN photodiode and an integrating circuit. In this paper, we present a theoretical model for the experimental data from previous similar experiments and in our present experiment, we attempt to verify the model in an independent and a more systematic way. Moreover, in our experiment we consider the regime of very small fluctuation when the contribution from the photon shot noise is significant, whereas we believe it was negligible in the previous experiments. Accordingly, we present certain critical improvements in the experimental setup that let us measure such a small fluctuation.

43 PARTICLE ACCELERATORS↗
NASA NTRS1968

Development of a Space Vehicle Electromagnetic Interference/compatibility Specification. Volume 3 - System Specification

This specification represents a new approach to controlling electromagnetic interference. In this approach the system integration contractor will be responsible for the development of discrete specification limits to be utilized on the program to which this specification is applied. The specification limits imposed upon subsystem contractors will be developed by the use of a computer program, available from the procuring agency, which is designed to consider the total system electromagnetic environment in the computation of these limits. The integration contractor will be required to mathematically model those circuits which represent required emitters and receptors of electromagnetic energy on the space vehicle. There are contained herein, a list of available computer models into which must be inserted particular parameters of the spacecraft subsystems. These functional models, when inserted into the computer program, will develop discrete specification limits based upon the requirements of the particular system modelled.

Cooperstein, B. D.↗
NASA NTRS1993

Direct time integration of Maxwell's equations in two-dimensional dielectric waveguides for propagation and scattering of femtosecond electromagnetic solitons

We present what are to our knowledge first-time calculations from vector nonlinear Maxwell's equations of femtosecond soliton propagation and scattering, including carrier waves, in two-dimensional dielectric waveguides. The time integration efficiently implements linear and nonlinear convolutions for the electric polarization, and the nonlinear convolution accounts for two quantum effects, the Kerr and Raman interactions. By retaining the optical carrier, the new method solves for fundamental quantities - optical electric and magnetic fields in space and time - rather than a nonphysical envelope function. It has the potential to provide an unprecedented two- and three-dimensional modeling capability for millimeter-scale integrated-optical circuits with submicrometer engineered inhomogeneities.

Joseph, Rose M.↗
NASA NTRS1998

Computational Modeling of Semiconductor Dynamics at Femtosecond Time Scales

The Interchange No. NCC2-5149 deals with the emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. To build such devices and subsystems, one needs to model the entire chip. PICs are useful for building components for integrated optical transmitters, integrated optical receivers, optical data storage systems, optical interconnects, and optical computers. For example, the current commercial rate for optical data transmission is 2.5 gigabits per second, whereas the use of shorter pulses to improve optical transmission rates would yield an increase of 400 to 1000 times. The improved optical data transmitters would be used in telecommunications networks and computer local-area networks. Also, these components can be applied to activities in space, such as satellite to satellite communications, when the data transmissions are made at optical frequencies. The research project consisted of developing accurate computer modeling of electromagnetic wave propagation in semiconductors. Such modeling is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Presently, there are no computer codes that could provide this modeling. Current codes do not solve the full vector, nonlinear, Maxwell's equations, which are required for these short pulses and also current codes do not solve the semiconductor Bloch equations, which are required to accurately describe the material's interaction with femtosecond pulses. The research performed under NCC2-5149 solves the combined Maxwell's and Bloch's equations.

Agrawal, Govind P.↗
NASA NTRS1973

Analysis and synthesis of distributed-lumped-active networks by digital computer

The use of digital computational techniques in the analysis and synthesis of DLA (distributed lumped active) networks is considered. This class of networks consists of three distinct types of elements, namely, distributed elements (modeled by partial differential equations), lumped elements (modeled by algebraic relations and ordinary differential equations), and active elements (modeled by algebraic relations). Such a characterization is applicable to a broad class of circuits, especially including those usually referred to as linear integrated circuits, since the fabrication techniques for such circuits readily produce elements which may be modeled as distributed, as well as the more conventional lumped and active ones.

Source record↗
DOE OSTI2025

Medium Voltage Testbed for Comparing Advanced Power Line Sensors vs. Transformers with Electrical Grid Events

Electrical utilities have relied upon potential transformers (PTs) and current transformers (CTs) for very accurate metering and to provide reliable signals for protective relays. These devices measure phase voltages and currents and are commissioned by electrical engineers. PTs/CTs can detect and react to various electrical anomalies that could adversely affect electrical grid operations. Less expensive alternative sensing technologies offer the possibility of wider deployment, particularly in grids that employ distributed energy resources. In this work, the performance of an advanced medium-voltage sensor is compared with that of a reference PT and a CT and experimentally evaluated for different power grid scenarios on an advanced outdoor power line sensor testbed at the U.S. Department of Energy’s Oak Ridge National Laboratory. The sensor is based on a capacitive divider for voltage monitoring and a Rogowski coil with an integrator for current monitoring. This study simulated a power grid model based on a utility circuit at the Riverside EPB of Chattanooga. The simulation circuit was created with MATLAB/Simulink software and was integrated into an RT-LAB project to run with the OP4510 real-time simulator at the OPLST. During the tests, the real-time simulations were run for 40 s, and the signal to record the test event with the power meter was set at 30 s for the event-trigger circuit. The advanced outdoor power line sensor testbed has a real-time simulator that is used to generate transient scenarios (e.g., electrical faults, capacitor bank operation, and service restoration), while the analog signals are recorded by the same high-resolution power meter. The behaviors of analog signals, harmonic components, total harmonic distortion, and crest factors are assessed for this power line sensor and compared with those of the reference PT/CT because of the absence of testing standards for advanced outdoor power line sensors. The results showed that this OPLS technology responded identically to the PT and CT under all conditions.

Piesciorovsky, Emilio [ORNL]↗
NASA NTRS2001

Plasma Reactor Modeling and Validation Experiments

Plasma processing is a key processing stop in integrated circuit manufacturing. Low pressure, high density plum reactors are widely used for etching and deposition. Inductively coupled plasma (ICP) source has become popular recently in many processing applications. In order to accelerate equipment and process design, an understanding of the physics and chemistry, particularly, plasma power coupling, plasma and processing uniformity and mechanism is important. This understanding is facilitated by comprehensive modeling and simulation as well as plasma diagnostics to provide the necessary data for model validation which are addressed in this presentation. We have developed a complete code for simulating an ICP reactor and the model consists of transport of electrons, ions, and neutrals, Poisson's equation, and Maxwell's equation along with gas flow and energy equations. Results will be presented for chlorine and fluorocarbon plasmas and compared with data from Langmuir probe, mass spectrometry and FTIR.

Meyyappan, M.↗