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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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75 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Small Co-doping induced magnetic and electrical transitions in single crystal CaF⁢e 0.95 ⁢C⁢o 0.05 ⁢O 3

CaFe⁢O 3 and CaF⁢e 0.95 ⁢C⁢o 0.05 ⁢O 3 single crystals were grown by combing floating-zone method with high oxygen pressure treatment. Both crystals show charge disproportionation of Fe (F⁡e 4+ → F⁡e 3+ + F⁡e 5+ ) accompanied by a metal-to-insulator transition as well as a crystal structural transformation from Pbnm to 𝑃⁢2 1 /𝑛. However, the slight introduction of Co significantly suppresses the critical temperature of charge disproportionation from 290 K in CaFe⁢O 3 to 260 K in CaF⁢e 0.95 ⁢C⁢o 0.05 ⁢O 3 . Different from the single antiferromagnetic phase transition as observed in the polycrystalline CaFe⁢O 3 , two sequential antiferromagnetic transitions are found to occur in these two single crystals with the Néel temperatures around 119 and 112 K for CaFe⁢O 3 crystal and 109 and 98 K for CaF⁢e 0.95 ⁢C⁢o 0.05 ⁢O 3 crystal, respectively. Neutron diffraction illustrates the formation of a spiral antiferromagnetic structure. Moreover, as the temperature further decreases to 65 K, a third magnetic transition accompanied by a second electrical transition is observed in the slightly Co-doped CaF⁢e 0.95 ⁢C⁢o 0.05 ⁢O 3 crystal. In conclusion, first-principles calculations suggest that the introduction of a moderate amount of Co and the peculiar spiral spin texture play an important role in the presence of such new magnetic and electrical transitions.

Xia, Hailiang [Chinese Academy of Sciences (CAS), ↗
DOE OSTI2026

Multifunctional electrochemical memory stabilized by phase coexistence

Our growing computing needs, especially in applications that heavily rely on artificial intelligence (AI), motivate a search for new components that could substantially augment the performance of general-purpose digital computers. Beyond ON/OFF switching, new components with linear multistate analog resistive tuning, nonlinear volatile switching, spiking, oscillatory, stochastic and other complex functionalities could enable highly efficient neuromorphic computing schemes for AI information processing. Compared to the extreme multifunctionality of biological neurons, realizing all the above characteristics in a single, scalable analog component remains a grand challenge. Here we investigate electrochemical gating combined with localized thermal activation to program and switch a single, vertically integrated and dimensionally scaled electrothermal chemical random access memory (ETCRAM) with a channel and reservoir composed of phase-separated vanadium oxide. Closely related to electrochemical RAM (ECRAM), ETCRAM uses an integrated gate-heater electrode to overcome kinetic barriers that help retain states at ambient temperatures. In addition to synapse-like stable and programmable analog resistance states arising from redox-tunable phase coexistence, a single component exhibits neuron-like nonlinear conductance switching with a tunable threshold and self-driven dynamics owing to the thermally driven metal-insulator phase transition in vanadium dioxide. More broadly, we demonstrate that electrochemically stabilized phase coexistence could unlock analog electronics with novel functionality, stability, reconfigurability, and scalability.

Oh, Sangheon [Sandia National Lab. (SNL-CA), Liver↗
DOE OSTI2026

Purpose, Design, and Analysis of the NSTX-U Centerstack Casing Lateral Support Shims

The National Spherical Torus Experiment Upgrade (NSTX-U) centerstack casing surrounds the central magnet core of NSTXU. It provides the inner vacuum boundary of the plasma chamber and supports the radially inboard plasma facing components lining the plasma chamber. The casing is supported like a cantilever, fixed at the lower flange by a connection to the TF Bundle through a G-10 ring. It is flexibly supported at the top by bellows, and insulated shims intended to react the largest part of the inventory of the disruption loads at the upper support, thereby protecting the upper and lower connections from excessive loads. A large part of the qualification of the casing and tiles requires addressing and quantifying disruption loads. These have been estimated based on extensions of the behavior of NSTX during its run period roughly 15 years ago. Structural qualification of the Upgrade used these estimates of the loading as input to calculations to demonstrate adequacy for a “most probable” disruption. The estimates are included in a requirements document to guide conservative design of all components loaded by disruptions. However, the changes made for the upgrade made the extrapolation of disruption behavior uncertain. Disruptions include axisymmetric loading from axisymmetric currents induced in the vessel shells. In addition, more complex currents called Halo currents are a result of plasma poloidal currents impinging on the casing. The halo currents add another layer of uncertain behavior and net lateral loading to the casing. As a result, NSTX-U is equipped with a number of instruments intended to assess the nature and severity of disruptions. The casing shims are required for lateral support of the casing, but these have also been converted to load cells to provide another measure of the magnitude of symmetric and asymmetric loading. Some of the logic in the development of the requirements document are presented. Electromagnetic analysis of axisymmetric and halo loading is described. Global simulations of the casing transient dynamic response, and local analysis and testing of the shim/load cell are included. The shim load cells and other instrumentation will be an important guide in planning NSTX-U experiments beyond its next run period expected in late 2026 or early 2027.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗