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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Evidence of Photo-induced Dynamic Competition of Metallic and Insulating Phase in a Layered Manganite.

We show evidence that the competition between the antiferromagetic metallic phase and the charge- and orbital-ordered insulating phase at the reentrant phase boundary of a layered manganite, LaSr2Mn2O7, can be manipulated using ultrafast optical excitation. The time- dependent evolution of the Jahn-Teller superlattice reflection, which indicates the formation of the charge and orbital order, was measured at different laser fluences. The laser-induced enhancement and reduction the Jahn-Teller reflection intensity shows a reversal of sign between earlier (~10 ns) and later (~150 ns) time delays during the relaxation after photo excitation. This effect is consistent with a scenario whereby the laser excitation modulates the local competition between the metallic and the insulating phases.

Li, Yuelin↗
DOE OSTI2016

Colossal magnetoresistance in a Mott insulator via magnetic field-driven insulator-metal transition

Here, we present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca 3 Ru 2 O 7 . Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattice-charge coupling. This study further provides a model approach to search for CMR systems other than manganites, such as Mott insulators in the vicinity of the boundary between competing phases.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2016

Pressure-Induced Confined Metal from the Mott Insulator Sr 3 Ir 2 O 7

The spin-orbit Mott insulator Sr 3 Ir 2 O 7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high-pressure electric resistance and resonant inelastic x-ray scattering measurements on single-crystal Sr 3 Ir 2 O 7 up to 63-65 GPa at 300 K. The material becomes a confined metal at 59.5 GPa, showing metallicity in the ab plane but an insulating behavior along the c axis. Such an unusual phenomenon resembles the strange metal phase in cuprate superconductors. Since there is no sign of the collapse of spin-orbit or Coulomb interactions in x-ray measurements, this novel insulator-metal transition is potentially driven by a first-order structural change at nearby pressures. Our discovery points to a new approach for synthesizing functional materials.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2011

Electrical properties of germanium-based insulator-semiconductor structures with an insulating layer of polynucleotides, and their monomer components on the surface

It is shown that adsorption of nucleic acid molecules and their monomeric components, i.e., nitrogenous bases, from aqueous solutions results in the formation of an insulating layer on the germanium surface. Comparatively small values of the insulator charge and the surface-state density point to promising applications of nucleotides for both the formation of germanium-based insulator-semiconductor structures with nanoscale insulating layers and low surface-state densities at the phase interface, and for germanium surface passivation. Changes in the electronic properties of the space-charge region of germanium during nucleotide adsorption on its surface can be used as a method for determining the nucleotide molecule concentration in aqueous solutions.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Observation of cyclotron resonance and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu 0.02 Bi 2 Se 3

We have utilized magneto-optical time-domain spectroscopy to investigate the low frequency optical response of topological insulator Cu 0.02 Bi 2 Se 3 and Bi 2 Se 3 films. With both field and frequency depedence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both samples. The small amount of Cu substitution into the Cu 0.02 Bi 2 Se 3 induces a true bulk insulator with only a single conduction channel with total sheet carrier density 4.9 x 10 12 /cm 2 and mobility as large as 4000 cm 2 /V s. This is consistent with pure topological surface state (TSSs) conduction with a chemical potential 150 meV above the Dirac point. Hence, a true topological insulator with an insulating bulk is realized. The CR broadens at high fields, an e ect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis on the zero field data. In contrast to Cu 0.02 Bi 2 Se 3 , two charge channels were observed in normal Bi 2 Se 3 films. We demonstrate a method to distinguish between the dominant TSSs and trivial bulk/2DEG states. The dominant channel exhibits a CR with a carrier density of ~2.0 x 10 13 /cm 2 and mobility ~3200 cm 2 /V s, consistent with TSSs with a chemical potential ~350meV above the Dirac point.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Sealed and Insulated Attic Hygrothermal Performance in New California Homes Using Vapor and Air Permeable Insulation—Field Study and Simulation

This project investigated the thermal and moisture performance of a low-cost approach to sealing and insulating attics using glass fiber insulation. The work included a combination of: (1) field measurements of attic and HVAC system performance in two new, high-performance homes in California’s Central Valley (Fresno), and (2) hygrothermal simulations of attic performance. Each field study attic was continuously monitored at multiple locations for over a year for wood moisture content, air humidity, condensation, temperature, and heat flux, together with on-site weather and solar conditions. The Fresno test home showed periodic condensation and high surface wood moisture content, but no surface mold or degradation upon visual inspection at the end of the test period. The Clovis test home showed less indication of high moisture levels—either from surface condensation or wood moisture content—but did have visible suspected mold growth on the inside of the North sheathing at the end of the field testing. These results show the limitations of current moisture measurement techniques focused on wood moisture content, rather than potential for mold growth. From a thermal/energy perspective the attics were close to indoor conditions thereby realizing the design intent for reducing duct system losses. Simulated site HVAC energy savings for sealed vs. vented attics averaged 18% across California climate regions (8% TDV energy savings). Savings were dominated by heating energy reductions; cooling savings were substantially lower. The moisture issues are investigated in greater detail in the simulations. First, we identified the climate regions and house characteristics that are associated with increased risk of mold growth or wood rot in new CA homes. Climate region was very important in determining risk, as were house features that reduced outside air exchange (e.g., 1-story homes, very tight envelopes, very tight attics, no IAQ fan), along with those that increased flow of moist air from the living space to the attic (e.g., supply ventilation fans, larger ceiling leaks, duct leakage). Second, we investigated several approaches to reduce moisture risks, and the best approach was to use a vapor retarder on the inner face of the fiberglass insulation. Both the field and simulation results indicate that the use of air and vapor permeable insulation can be acceptable from a thermal/energy point of view, but additional measures need to be taken to reduce moisture risks, primarily from mold growth.

42 ENGINEERING↗
NASA NTRS1991

Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

Kapoor, V. J.↗
DOE OSTI2019

Measured moisture performance of sealed and insulated attics with permeable insulation in california homes

This study performed detailed thermal and moisture measurements in two homes in Fresno and Clovis, California with sealed attics insulated with glass fiber insulation to determine moisture performance in inland California climates. Data were recorded once every minute for more than a year in each home to allow detailed observation of time-varying moisture and thermal conditions. Moisture measurements were taken at multiple locations in each attic and included wood moisture, surface condensation and surface relative humidity. The results showed that there are strong solar-driven diurnal cycles in attic wood and air moisture content, as well as longer-term seasonal and annual variations. Mold growth was obdserved on the North roof deck in one of the two homes even in this sunny dry climate with attics built in compliance with California building codes that specifically address sealed and insulated attics with vapor-permeable insulation. We investigated moisture stratification in the attic and found that, although there is stratification during sunny daytime hours, this was not when wood moisture content, surface humidity or surface condensation are high. Therefore, other moisture transport mechanisms are acting to increase moisture levels near the roof peak. Finally, our measurements also showed that the attic with the highest measured moisture levels did not have any mold growth, while mold was visually observed in the attic whose measurements indicted little or no concern, indicating that the state-of-the-art in moisture measurement and mold growth prediction in building assemblies may be insufficient.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Measured Moisture Performance of Sealed and Insulated Attics with Permeable Insulation In California Homes

This study performed detailed thermal and moisture measurements in two homes in Fresno and Clovis, California with sealed attics insulated with glass fiber insulation to determine moisture performance in inland California climates. Data were recorded once every minute for more than a year in each home to allow detailed observation of time-varying moisture and thermal conditions. Moisture measurements were taken at multiple locations in each attic and included wood moisture, surface condensation and surface relative humidity. The results showed that there are strong solar-driven diurnal cycles in attic wood and air moisture content, as well as longer-term seasonal and annual variations. Mold growth was obdserved on the North roof deck in one of the two homes even in this sunny dry climate with attics built in compliance with California building codes that specifically address sealed and insulated attics with vapor-permeable insulation. We investigated moisture stratification in the attic and found that, although there is stratification during sunny daytime hours, this was not when wood moisture content, surface humidity or surface condensation are high. Therefore, other moisture transport mechanisms are acting to increase moisture levels near the roof peak. Finally, our measurements also showed that the attic with the highest measured moisture levels did not have any mold growth, while mold was visually observed in the attic whose measurements indicted little or no concern, indicating that the state-of-the-art in moisture measurement and mold growth prediction in building assemblies may be insufficient.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2026

Spin Texture Control and Magnetic Gap Engineering in a Ferromagnetic Insulator–Topological Insulator Sandwiched Heterostructure

Quantum materials that combine magnetism with topological order are emerging as key platforms for next-generation spintronics and low-energy electronics. They enable the realization of emergent quantum phenomena, such as the quantum anomalous Hall effect and axion insulator states. The ferromagnetic insulator (FMI)/topological insulator (TI)/FMI sandwich structure of a single-septuple layer (1SL) MnBi 2 Te 4 /four-quintuple layer (4QL) Bi 2 Te 3 /1SL MnBi 2 Te 4 holds great potential to achieve such desirable quantum phenomena at an elevated temperature, owing to its large Dirac point band gap and high Curie temperature. Here, for this work, spin- and angle-resolved photoemission spectroscopy (spin-ARPES) is employed to directly verify that the band gap arises from broken time-reversal symmetry via proximity-driven magnetization. This study demonstrates direct control of the spin state via external magnetic fields and unambiguously confirms the exchange interaction as the gap-opening mechanism. The robust magnetic gap and controllable spin texture make this heterostructure a suitable candidate for spintronic applications and magnetic topological quantum phases.

exchange gap↗
DOE OSTI2018

Topological Insulators versus Topological Dirac Semimetals in Honeycomb Compounds

Intriguing physical properties of materials stem from their chemical constituents, whereas the connection between them is often not clear. Here, we uncover a general chemical classification for the two quantum phases in the honeycomb ABX structure—topological insulator (TI) and topological Dirac semimetal (TDSM). First, we find among the 816 (existing as well as hypothetical) calculated compounds, 160 TIs (none were noted before), 96 TDSMs, 282 normal insulators (NIs), and 278 metals. Second, based on this classification, we have distilled a simple chemical regularity based on compound formulas for the selectivity between TI and TDSM: the ABX compounds that are TDSM have B atoms (part of the BX honeycomb layers) that come from the periodic table columns XI (Cu, Ag, Au) or XII (Zn, Cd, Hg), or Mg (group II), whereas the ABX compounds whose B at-oms come from columns I (Li, Na, K, Rb, Cs) or II (Ca, Sr, Ba) are TIs. Third, focusing on the ABX bismide compounds that are thermodynamically stable, we find a structural motif that delivers topological insulation and stability at the same time. Furthermore, this study opens the way to simultaneously design new topological materials based on the compositional rules indicated here.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Synthesis, Magnetic Properties, and Electronic Structure of Magnetic Topological Insulator MnBi 2 Se 4

The intrinsic magnetic topological insulators MnBi 2 Te 4 and MnBi 2 Se 4 support novel topological states related to symmetry breaking by magnetic order. Unlike MnBi 2 Te 4 , the study of MnBi 2 Se 4 has been inhibited by the lack of bulk crystals, as the van der Waals (vdW) crystal is not the thermodynamic equilibrium phase. In this study, we report the layer-by-layer synthesis of vdW MnBi 2 Se 4 crystals using nonequilibrium molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy and scanning tunneling microscopy identify a well-ordered vdW crystal with septuple-layer base units. The magnetic properties agree with the predicted layered antiferromagnetic ordering but disagree with its predicted out-of-plane orientation. Instead, our samples exhibit an easy-plane anisotropy, which is explained by including dipole–dipole interactions. Angle-resolved photoemission spectroscopy reveals the gapless Dirac-like surface state, which demonstrates that MnBi 2 Se 4 is a topological insulator above the magnetic-ordering temperature. These studies show that MnBi 2 Se 4 is a promising candidate for exploring rich topological phases of layered antiferromagnetic topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Resistivity of Surface Steps in Bulk-Insulating Topological Insulators

Electron transport in topological insulators usually involves both topologically protected surface states and trivial electronic states in the bulk material. The surface transport is particularly interesting; however, it is also susceptible to atomic defects on the surfaces, such as vacancies, impurities, and step edges. Experimental determination of scattering effects of these surface defects requires both nanoscale spatial resolution and the ability to decipher surface transport from bulk transport. Here we directly measure the resistivity of individual surface steps in the surface dominating transport process of topological insulator Bi 2 Te 2 Se. A variable probe-spacing transport spectroscopy with a multiprobe scanning tunneling microscope is used to differentiate the surface conductance from bulk conductance, allowing the identification of a surface dominant transport regime. The technique also reveals a deviation from ideal 2D transport at atomic steps. Then, a multi-probe scanning tunneling potentiometry is employed to visualize the electrochemical potentials across individual step edges. A quantitative analysis of the potential distributions enables us to acquire a resistivity of 0.530 mΩ · cm for the one quintuple-layer atomic step. The result indicates that atomic defects, despite preserving the time-reversal symmetry, can still significantly affect the transport in topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2021

3D Artificial Solid-Electrolyte Interphase for Lithium Metal Anodes Enabled by Insulator–Metal–Insulator Layered Heterostructures

Despite considerable efforts to prevent lithium (Li) dendrite growth, stable cycling of Li metal anodes with various structures remains extremely difficult due to the direct contact of the liquid electrolyte with Li. Rational design of solid-electrolyte interphase (SEI) for 3D electrodes is a promising but still challenging strategy for preventing Li dendrite growth and avoiding lithium–electrolyte side reactions in Li-metal batteries. Here, a 3D architecture is constructed with g-C 3 N 4 /graphene/g-C 3 N 4 insulator–metal–insulator sandwiched nanosheets to guide uniform Li plating/stripping in the van der Waals gap between the graphene and the g-C 3 N 4 , and the function of which can be regarded as a 3D artificial SEI. Li deposition on the surface of g-C 3 N 4 is suppressed due to its insulating nature. However, its uniform lithiophilic sites and nanopore channels enable homogeneous lithium plating between the graphene and the g-C 3 N 4 , prohibiting the direct contact of the electrolyte with the Li metal. The use of the g-C 3 N 4 -layer-modified 3D anode enables long-term Li deposition with a high Coulombic efficiency and stable cycling of full cells under high cathode loading, limited Li excess, and lean electrolyte conditions. The concept of a 3D artificial SEI will shed light on developing safe and stable Li-metal anodes.

25 ENERGY STORAGE↗
DOE OSTI2018

Coupled Dirac Plasmons in Topological Insulators

Topological insulators are predicted to house spin-polarized two-dimensional Dirac plasmons. In topological insulator thin films, Dirac plasmons on the top and bottom surfaces will be coupled, giving rise to an unusual dispersion relationship. These plasmons are of interest both for fundamental science as well as applications in THz sensing and waveguiding. In this article, we present conclusive evidence for coupled Dirac plasmons excited in the surface states of topological insulator thin film stripe arrays by investigating how the plasmon frequency depends on both film thickness and stripe width. Bi 2 Se 3 films of thickness 50-200nm are patterned into periodic stripes of width 1-4μm to excite plasmons. The plasmon frequency dependence on both film thickness and stripe width is found to be in good agreement with theoretical models for couple 2D Dirac plasmons. Alternative explanations such as 2D massive plasmons are shown to be inconstant with data. Finally, effective mode indexes of up to 211 are reported, demonstrating incredible confinement of light in the THz frequency range.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Electronic response of a Mott insulator at a current-induced insulator-to-metal transition

The Mott insulator Ca 2 RuO 4 exhibits an insulator-to-metal transition induced by d.c. current. Despite the thorough examination of the structural changes associated with this transition, a comprehensive knowledge of the response of electronic degrees of freedom is still lacking. Here we demonstrate current-induced modifications of the electronic states of Ca 2 RuO 4 . Angle-resolved photoemission spectroscopy in conjunction with four-probe electrical transport (transport-ARPES) measurements reveal a clear reduction of the Mott gap and a modification in the dispersion of the Ru bands. Based on a free-energy analysis, we show that the current-induced phase is electronically distinct from the high-temperature zero-current metallic phase. Our results highlight strong interplay of lattice- and orbital-dependent electronic responses in the current-driven insulator-to-metal transition.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

We have investigated the interfacial and electrical properties of vanadyl-phthalocyanine (VOPc) metal-insulator-semiconductor devices by the measurement of capacitance and conductance. The devices have been fabricated on ordered para-sexiphenyl (p-6P) layer with silicon nitride (SiN{sub x}) as gate insulator. The VOPc/p-6P/SiN{sub x} devices have shown a negligible hysteresis, low series resistance, and high operated frequency. Bulk traps have been distinguished from interface traps by two loss peaks in conductance measurement. Trap densities and distribution of trap energy level have been obtained. The improved properties indicate that VOPc/ p-6P devices with SiN{sub x} insulator hold a great promise of application in flexible displays.

36 MATERIALS SCIENCE↗