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At least 91 records · Page 5

Introduction of a Variable Inductance Transformer for the Design of Resonant Power Converters

Magnetic integration is a hot topic in power electronics that concerns the use of a transformer’s leakage and magnetizing inductances purposefully in isolated power electronic converters, thereby giving the opportunity to save the cost and footprint of any additional inductor. This is of prime interest, especially in CLLLC resonant converters which require up to three inductors. For a complete integration of these inductances, the concept of a variable inductance transformer (VIT) is introduced in this thesis. A VIT is an adaptive magnetic structure that facilitates an easy adjustment of both magnetizing and leakage inductances to meet their desired values. However, for a more promising design, an accurate estimation of these inductances is necessary. While the evaluation of magnetizing inductance is quite straightforward, the calculation of leakage inductance is rather convoluted, because the leakage inductance is influenced by both the winding layout and the operating frequency. In this thesis, three new semi-analytical methods for calculating the frequency-independent leakage inductance, and a novel semi-analytical method for evaluating the frequency-dependent leakage inductance are proposed. These methods can calculate the respective leakage inductances of a VIT within an outstanding ±5% uncertainty. Finally, a bidirectional CLLLC resonant dc-dc converter is investigated for the constant current constant voltage (CCCV) charging of the next-generation 900 V traction battery of an electric vehicle. A new voltage gain equation is derived for designing the CLLLC resonant tank, and a small-signal model is presented for designing the variable-frequency feedback controller. Furthermore, a new methodology to design a VIT is developed to overcome the challenges associated with small coupling coefficients and guarantee a complete magnetic integration of the tank inductances. All theoretical results presented herein are verified through simulations and experiments performed on hardware prototypes designed in the lab.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Hierarchical Phased-Array Antennas Coupled to Al KIDs: A Scalable Architecture for Multi-band Millimeter/Submillimeter Focal Planes

We present the optical characterization of two-scale hierarchical phased-array antenna kinetic inductance detectors (KIDs) for millimeter/submillimeter wavelengths. Our KIDs have a lumped-element architecture with parallel plate capacitors and aluminum inductors. The incoming light is received with a hierarchical phased array of slot dipole antennas, split into 4 frequency bands (between 125 GHz and 365 GHz) with on-chip lumped-element band-pass filters, and routed to different KIDs using microstriplines. Individual pixels detect light for the 3 higher-frequency bands (190–365 GHz), and the signals from four individual pixels are coherently summed to create a larger pixel detecting light for the lowest frequency band (125–175 GHz). The spectral response of the band-pass filters was measured using Fourier transform spectroscopy (FTS), the far-field beam pattern of the phased-array antennas was obtained using an infrared source mounted on a 2-axis translating stage, and the optical efficiency of the KIDs was characterized by observing loads at 294 K and 77 K. We report on the results of these three measurements.

47 OTHER INSTRUMENTATION↗

High-T c Superconducting Memory Cell

In this paper, operational principles of a cryogenic memory cell that utilizes high-temperature superconductors (high-T c ) are presented. Such a cell consists of three inductively coupled Josephson junctions coupled via inductors. Design and operational logic of this type of cell were recently introduced and demonstrated for low temperature 4 K environment. The basic memory cell operations (read, write, reset) can be implemented on the same simple circuit and both destructive and non-destructive memory cell operations can be realized. Here, we present the design principles and computational validation of basic memory cell operations (write, read, and reset) for the high-T c memory cell. In conclusion, our results for the high-T c memory cell operations show very good resemblance with the previously presented low-temperature 4 K memory cell operations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Advances in Processing, Manufacturing, and Applications of Magnetic Materials

Magnetic materials are increasingly important for many green energy technologies. Probably, the best known of these are permanent magnets. They are used to supply a magnetic field and are widely used in actuators, motors, generators, data storage, and sensors. These are “hard magnets,” meaning that they retain a large permanent magnetization (difficult to be demagnetized), which is what makes them so useful in motors where an opposing magnetic field can be used to push against them. A coercivity (resistance to demagnetization) of ~400 Oe (32,000 A/m) or more is typically the threshold value for a hard magnet and is typical of isotropic sintered ferrite (SrFe 12 O 19 ) such as found in many “refrigerator magnets.” Comparably important soft magnets are useful for directing magnetic fields and can be very easily (de)magnetized. As such, they typically have a coercivity < 12.5 Oe (1000 A/m), and specialized very soft magnets can have coercivities < 0.00125 Oe (1 A/m). Some common applications include coil cores, transformer cores, and magnetic shielding. Additionally, they are important for many AC electrical applications such as inductors, filters, and resonators, particularly at high frequencies up to and including microwaves.

36 MATERIALS SCIENCE↗

A method for automated modeling of plasma shape control response in tokamaks

Here, a simple method commonly used in modeling of tokamak conductor and plasma response for plasma control has been extended to allow more general modeling of tokamak PF conductor circuits. This extension combines a previously existing method for integrating plasma response and tokamak circuits with a more capable circuit modeling technique derived from the theory that underlies present-day automatic circuit simulation codes. This combined method can incorporate any combination of inductors (e.g., coils), resistors, capacitors, voltage sources, and current sources, while retaining the same model structure and ease of interpretation as the simple method. For many tokamaks, use of this extended method would not be the preferred approach, but for certain devices or for specialized models of a device, it is useful and occasionally essential. For example, the method has enabled fast and automated modeling of the complicated and daily-changing circuit topology used in the DIII-D tokamak. This automated modeling is essential to the support of controller design for the frequently changing requirements for DIII-D plasmas. It is likely to also find application in the workflows for new device designs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Phase stability and magnetic and electronic properties of a spark plasma sintered CoFe – P soft magnetic alloy

More efficient power conversion devices are able to transmit greater electrical power across larger distances to satisfy growing global electrical needs. A critical requirement to achieve more efficient power conversion are the soft magnetic materials used as core materials in transformers, inductors, and motors. To that effect it is well known that the use of non-equilibrium microstructures, which are, for example, nanocrystalline or consist of single phase solid solutions, can yield high saturation magnetic polarization and high electrical resistivity necessary for more efficient soft magnetic materials. In this work, we synthesized CoFe – P soft magnetic alloys containing nanocrystalline, single phase solid solution microstructures and studied the effect of a secondary intermetallic phase on the saturation magnetic polarization and electrical resistivity of the consolidated alloy. Single phase solid solution CoFe – P alloys were prepared through mechanically alloying metal powders and phase decomposition was observed after subsequent consolidation via spark plasma sintering (SPS) at various temperatures. The secondary intermetallic phase was identified as the orthorhombic (Co x Fe 1-x ) 2 P phase and the magnetic properties of the (Co x Fe 1-x ) 2 P intermetallic phase were found to be detrimental to the soft magnetic properties of the targeted CoFe – P alloy.

36 MATERIALS SCIENCE↗

Near-field passive sensor for the monitoring of high-temperature oxidative corrosion of metals

This study reports on the development and testing of a passive wireless device designed to track temperature and corrosion behavior in SS304H stainless steel under elevated temperatures. The ANSYS HFSS software was utilized to model and optimize the design of an inductor-capacitor (LC) resonator passive wireless sensors fabricated using platinum designs printed onto an aluminum oxide support operating at frequencies between (50–190 MHz). The optimal LC wireless sensor designs were then fabricated using screen-printing and sintering methods. Here, the sensors were tested by placing the sensor onto polished SS304H flat substrates and heated to 900–1050 °C in air. Wireless acquisition of sensor data during heating, cooling, and isothermal stages was achieved through a Pt loop antenna connected to an RF signal generator and a network analyzer.

20 FOSSIL-FUELED POWER PLANTS↗

Robust Interpretation of Electrochemical Impedance Spectra Using Numerical Complex Analysis

Electrochemical Impedance Spectroscopy (EIS) is a noninvasive technique widely used for understanding charge transfer and charge transport processes in electrochemical systems and devices. Standard approaches for the interpretation of EIS data involve starting with a hypothetical circuit model for the physical processes in the device based on experience/intuition and then fitting the EIS data to this circuit model. This work explores a mathematical approach for extracting key characteristic features from EIS data by relying on fundamental principles of complex analysis. These characteristic features can suggest the presence of inductors and constant phase elements (nonideal capacitors) from impedance data and enable us to answer questions about the identifiability and nonuniqueness of equivalent circuit models. In certain scenarios such as models with only resistors and capacitors, we are able to enumerate all possible families of circuit models. Finally, we apply the mathematical framework presented here to real-world electrochemical systems and highlight results using impedance measurements from a lithium-ion battery coin cell.

charge transfer↗

Impedance sources (Z sources) with inherent fault protection for resilient and fire-free electricity grids

Modern societies would not survive without electricity and at the same time electrical faults could cause and have caused many catastrophes—mainly deadly fires—to our societies. There are two types of electricity sources: the voltage source such as generators, charged batteries and capacitors, and the current source such as charged inductors, current-regulated rectifiers, and superconducting magnetic energy storage. An “ideal” voltage source—that is often-sought-or-intentionally engineered—generates a constant voltage irrespective of its load current, and an “ideal” current source injects a constant current irrespective of its load voltage. However, two problems exist: (1) voltage or current sources do not represent many emerging natural/renewable energy sources such as wind turbine generators, photovoltaic cells, and fuel cells, whose output voltage and current are strongly dependent on each other, and (2) a short-circuit fault to an artificially-made and controlled “ideal” voltage source or an open-circuit fault to an “ideal” current source can cause catastrophic failures of the source itself and its surrounding circuits due to large (theoretically infinite) short-circuit current or open-circuit voltage. Here we introduce an impedance source concept to represent, characterize, and model those electricity sources whose output voltage and current are strongly dependent on each other. First, we found that many electric sources with no feedback (or active) control of their output voltage and/or current are a natural impedance source with inherent fault protection at short-circuit or open-circuit faults. Second, any electrical source can be artificially controlled to mimic a natural impedance source. Finally, we show how to apply natural impedance sources and nature-mimicking artificially-controlled sources to the electricity grid—the most complex machine ever made by human beings—to realize electricity grids that are naturally stable, self-protected against electrical faults, and resilient to natural and human-made events.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Spacetime pq theory for AC and DC electric power systems

The 50/60 Hz alternating current (AC) electric power has been the standard and most flexible energy source powering our modern societies for one and a half centuries since the war of the currents: AC versus direct current (DC). A reactive power concept that was introduced at the beginning of the AC power was very useful for circuit/system analysis, design, control, optimization, and ultimately for more efficient and stable generation, transmission, distribution, and consumption. The initial reactive power theory was based on single-phase sinusoidal AC power to capture inductive and capacitive power that yields to net-zero average power over one fundamental cycle. Soon it was expanded to non-sinusoidal AC power and finally to instantaneous three-phase AC power. However, these reactive power theories remain separate and limited to special cases and have never been consolidated and made valid to all cases. Today, more widespread adoption of power electronics and renewable energy is bringing back DC power into the electric grids. The reactive power concept has never been applied to DC power systems. There is no reactive power in DC power systems according to the existing reactive power theories. Do DC power systems really have no reactive power? Capacitors and inductors are widely used in DC just like in AC power systems. Are they not reactive power components? Why are they different from their AC counterparts? Furthermore, are batteries active or reactive power components? What about active devices like power converters (or inverters) with AC (or DC) on one side and DC (or AC) on the other? Do they generate or consume reactive power? Finally, what about AC and DC hybrid power systems? How to define reactive power in such a complex power system that has a multitude of loads, buses, and sources? Is there reactive power between any two loads, any two buses, or any two sources in a power system and what is the total reactive power in such a complex power system as a whole? As the motivation and goal of this paper to answer the above basic questions, to unify the existing AC reactive power theories and to ultimately provide theoretical and insightful guidance for system analysis, design, control, efficiency, optimization, and operation of complex power systems, a concept of spacetime (both spatial and temporal) active and reactive power (pq) theory—the spatiotemporal aspect of active and reactive power—is developed for both AC and DC power systems. The theoretical definitions and physical meanings of the spacetime reactive power will be developed, and real applications and thought experiments/cases/exercises will be explored and discussed. The developed mathematics to define the active (or real) and reactive (or imaginary) power— p and q respectively by dot (scalar) and cross (vector) products of multi-dimension spacetime vectors and time-space mapping principle/law can have some fundamental implications as well.

24 POWER TRANSMISSION AND DISTRIBUTION↗

A scalable superconducting nanowire memory array with row–column addressing

Scalable superconducting memory is required for the development of low-energy superconducting computers and fault-tolerant quantum computers. Conventional superconducting logic-based memory cells possess a large footprint that limits scaling; nanowire-based superconducting memory cells, although more compact, have high error rates, which hinders integration into large arrays. Here we report a 4 × 4 superconducting nanowire memory array that is designed for scalable row–column operations and has a functional density of 2.6 Mbit cm −2 . Each memory cell is based on a nanowire loop consisting of two temperature-dependent superconducting switches and a variable kinetic inductor. The arrays operate at 1.3 K, where we implement and characterize multiflux quanta state storage and destructive read-out. By optimizing the write- and read-pulse sequences, we minimize bit errors and maximize operating margins. We achieve a minimum bit error rate of 10 −5 . Here, we also use circuit-level simulations to understand the memory cell’s dynamics, performance limits and stability under varying pulse amplitudes.

Electrical and electronic engineering↗

Electron spin resonance spectroscopy with femtoliter detection volume

We report electron spin resonance measurements of donors in silicon at millikelvin temperatures using a superconducting LC planar micro-resonator and a Josephson parametric amplifier. The resonator includes a nanowire inductor, defining a femtoliter detection volume. Due to strain in the substrate, the donor resonance lines are heavily broadened. In this work, single-spin to photon coupling strengths up to ~ 3 kHz are observed. The single shot sensitivity is 120 ± 24 spins/Hahn echo, corresponding to ≈ 12 ± 3 spins / Hz for repeated acquisition.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Physics-based compact modeling of electro-thermal memristors: Negative differential resistance, local activity, and non-local dynamical bifurcations

Leon Chua's Local Activity theory quantitatively relates the compact model of an isolated nonlinear circuit element, such as a memristor, to its potential for desired dynamical behaviors when externally coupled to passive elements in a circuit. However, the theory's use has often been limited to potentially unphysical toy models and analyses of small-signal linear circuits containing pseudo-elements (resistors, capacitors, and inductors), which provide little insight into required physical, material, and device properties. Furthermore, the Local Activity concept relies on a local analysis and must be complemented by examining dynamical behavior far away from the steady-states of a circuit. In this work, we review and study a class of generic and extended one-dimensional electro-thermal memristors (i.e., temperature is the sole state variable), re-framing the analysis in terms of physically motivated definitions and visualizations to derive intuitive compact models and simulate their dynamical behavior in terms of experimentally measurable properties, such as electrical and thermal conductance and capacitance and their derivatives with respect to voltage and temperature. Within this unified framework, we connect steady-state phenomena, such as negative differential resistance, and dynamical behaviors, such as instability, oscillations, and bifurcations, through a set of dimensionless nonlinearity parameters. In particular, we reveal that the reactance associated with electro-thermal memristors is the result of a phase shift between oscillating current and voltage induced by the dynamical delay and coupling between the electrical and thermal variables. We thus, demonstrate both the utility and limitations of local analyses to understand non-local dynamical behavior. Critically for future experimentation, the analyses show that external coupling of a memristor to impedances within modern sourcing and measurement instruments can dominate the response of the total circuit, making it impossible to characterize the response of an uncoupled circuit element for which a compact model is desired. However, these effects can be minimized by proper understanding of the Local Activity theory to design and utilize purpose-built instruments.

Brown, Timothy D. (ORCID:0000000347068355)↗

Tuning the inductance of Josephson junction arrays without SQUIDs

It is customary to use arrays of superconducting quantum interference devices (SQUIDs) for implementing magnetic field-tunable inductors. Here, we demonstrate an equivalent tunability in a (SQUID-free) array of single Al/AlOx/Al Josephson tunnel junctions. With the proper choice of junction geometry, a perpendicularly applied magnetic field bends along the plane of the superconductor and focuses into the tunnel barrier region due to a demagnetization effect. Consequently, the Josephson inductance can be efficiently modulated by the Fraunhofer-type supercurrent interference. The elimination of SQUIDs not only simplifies the device design and fabrication but also facilitates a denser packing of junctions, and, hence, a higher inductance per unit length. As an example, we demonstrate a transmission line, the characteristic impedance of which is field-tuned in the range of 4–8 kΩ, centered around the important value of the resistance quantum h/(2e)2≈6.5 kΩ.

Physics↗

High-Q superconducting lumped-element resonators for low-mass axion searches

Low-frequency superconducting lumped-element resonators have recently attracted significant attention in the context of axion dark matter searches. Here, we present the design and implementation of a fixed-frequency superconducting resonator operating near 250 kHz, possessing an inductor volume of ∼1 liter and achieving an unloaded quality factor Q ≈ 2.1 × 10 6 . This resonator represents a significant improvement over the state of the art and informs the design of searches for low-mass axions.

Bosons↗

Improving wafer-scale Josephson junction resistance variation in superconducting quantum coherent circuits

Quantum bits, or qubits, are an example of coherent circuits envisioned for next-generation computers and detectors. A robust superconducting qubit with a coherent lifetime of O (100 µs) is the transmon: a Josephson junction functioning as a non-linear inductor shunted with a capacitor to form an anharmonic oscillator. In a complex device with many such transmons, precise control over each qubit frequency is often required, and thus variations of the junction area and tunnel barrier thickness must be sufficiently minimized to achieve optimal performance while avoiding spectral overlap between neighboring circuits. Simply transplanting our recipe optimized for single, stand-alone devices to wafer-scale (producing 64, 1x1 cm dies from a 150 mm wafer) initially resulted in global drifts in room-temperature tunneling resistance of ± 30%. Inferring a critical current variation from this resistance distribution, we present an optimized process developed from a systematic 38 wafer study that results in < 3.5% relative standard deviation (RSD) in critical current ( ) for 3000 Josephson junctions (both single-junctions and asymmetric SQUIDs) across an area of 49 cm 2 . Looking within a 1x1 cm moving window across the substrate gives an estimate of the variation characteristic of a given qubit chip. Our best process, utilizing ultrasonically assisted development, uniform ashing, and dynamic oxidation has shown = 1.8% within 1x1 cm, on average, with a few 1x1 cm areas having < 1.0% (equivalent to < 0.5%). Such stability would drastically improve the yield of multi-junction chips with strict critical current requirements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Flashlamp drive system for a high-energy 10–100 kHz pulse-burst Nd:YAG laser

We present the design of the flashlamp drive system for the NG100 laser, a 1 J/pulse, 10–100 kHz, pulse-burst Nd:YAG laser system being developed for application in a Thomson scattering plasma diagnostic. This flashlamp drive system is under active development, with a prototype now being constructed. The flashlamp drive system is modular, with each module capable of driving a series pair of linear flashlamps. Each drive module contains and is controlled by a dedicated Analog Regulator Controller. Thus each module is independently operable and controllable. This modular approach imposes no intrinsic limit to the number of modules that may be applied to drive the flashlamp pairs in a laser system. Each flashlamp drive module has a switch-regulated topology. An 1800 V main capacitor bank provides 25 kJ of energy storage, while a lower voltage output capacitor bank provides filtering and the initial energy delivered to the flashlamps at the start of the drive pulse. The main bank is recharged after each flashlamp drive pulse. As energy is drawn from the output bank by the flashlamps, an IGBT switching regulator feeds current from the main bank through an inductor to replenish the output capacitor bank. The rate of replenishment is feedback-controlled to maintain a regulated supply of power to the flashlamp load, with a setpoint range of 0.07 to 1.65 MW. An Analog Regulator Controller produces two-state variable pulse width feedback switching of the regulator IGBT. The switching frequency is ≤ 20 kHz, dynamically adjusted to limit ripple of the flashlamp power to ±3% statistical standard deviation of mean. For development or troubleshooting, each module is operable independent of the laser digital control system (microcontroller and FPGA).

Plasma diagnostics - interferometry↗

Network analysis of memristive device circuits: dynamics, stability and correlations

Abstract Networks with memristive devices are a potential basis for the next generation of computing devices. They are also an important model system for basic science, from modeling nanoscale conductivity to providing insight into the information-processing of neurons. The resistance in a memristive device depends on the history of the applied bias and thus displays a type of memory. The interplay of this memory with the dynamic properties of the network can give rise to new behavior, offering many fascinating theoretical challenges. But methods to analyze general memristive circuits are not well described in the literature. In this paper we develop a general circuit analysis for networks that combine memristive devices alongside resistors, capacitors and inductors and under various types of control. We derive equations of motion for the memory parameters of these circuits and describe the conditions for which a network should display properties characteristic of a resonator system. For the case of a purely memresistive network, we derive Lyapunov functions, which can be used to study the stability of the network dynamics. Surprisingly, analysis of the Lyapunov functions show that these circuits do not always have a stable equilibrium in the case of nonlinear resistance and window functions. The Lyapunov function allows us to study circuit invariances, wherein different circuits give rise to similar equations of motion, which manifest through a gauge freedom and node permutations. Finally, we identify the relation between the graph Laplacian and the operators governing the dynamics of memristor networks operators, and we use these tools to study the correlations between distant memristive devices through the effective resistance.

97 MATHEMATICS AND COMPUTING↗