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All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Carbon and silicon background impurity control in undoped GaN layers grown with trimethylgallium and triethylgallium via metalorganic chemical vapor deposition

The unintentional impurity incorporation in GaN epitaxial layers impacts the electrical conductivity and optical properties of the films grown by metalorganic chemical vapor deposition (MOCVD). It is critical to control impurity-related states for device structure development. The aim of this work is to contribute to the understanding of the reasons for the presence of certain background impurities. In this paper, the unintentional impurity incorporation of carbon, hydrogen, oxygen, and silicon in undoped (u-) GaN films grown by low-pressure MOCVD were studied. Background impurity concentrations were evaluated by secondary ion mass spectroscopy (SIMS) to optimize growth parameters including V/III ratio, growth temperature (T g ), growth pressure (P g ), and gallium (Ga) precursors of trimethylgallium (TMG) or triethylgallium (TEG). Unintentional [C] and [Si] incorporations are found to be highly dependent on the growth parameters. Further, for the same growth conditions, u-GaN films grown with a TEG precursor exhibited a lower background concentration of C compared to that of GaN grown with TMG. However, the lowest background [C] achieved was grown with TMG using optimized conditions and exhibited [C]<4×10 15 cm -3 which was at the detection limit of the SIMS measurement. These results were measured for a u-GaN layer grown with TMG at 200 Torr, 1030°C, and a V/III of 3700. The lowest background [Si] of 4×10 15 cm -3 was achieved by growing with TMG at 200 Torr, 1000°C, and V/III of 650.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Effect of Confinement of SIA Cluster Diffusion by Impurities on Radiation Defect Accumulation due to 14MeV neutrons in Tungsten

Impurities acting as traps, reduce the self-interstitial atom (SIA) cluster mobility, thereby increasing recombination and in turn enhancing radiation-resistance of polycrystalline materials. However, at elevated temperatures, depending on SIA-trap (impurity) binding energy, SIA clusters may trap and detrap (detach) numerous times. In tungsten, SIA clusters of all sizes glide one-dimensionally (1D) along their Burgers vector direction. Hence, detrapped SIAs would retrace their path, confining their 1D-glide between traps. However, small SIA clusters can change the direction of their 1D-glide by overcoming a rotation barrier. In addition, impurities or solutes are known to reduce this barrier. A lower rotation barrier can result in detrapped SIA clusters that diffuse in a random 1D direction, effectively leading to 3D (net-3D) diffusion. Here we investigate the effect of two cases of SIA diffusion, namely confined-1D diffusion and net-3D diffusion, on the damage accumulation in polycrystalline tungsten under 14 MeV neutron irradiation using the object kinetic Monte Carlo method. Simulations were performed using cascade debris obtained from molecular dynamics simulations with primary knock-on atom (PKA) energies corresponding to 14 MeV neutrons. In the simulations with net-3D diffusion, SIA clusters of all sizes diffuse in a random 1D direction after the clusters detrap. While for the confined 1D diffusion case, SIA clusters larger than size 5 retain their original direction of 1D-glide. In both types of simulations, trapped vacancies are assumed to be permanently immobilized. Unexpectedly, the damage accumulation was lower with confined 1D diffusion than that with net-3D. We present a systematic comparison of the influence of the two cases of SIA diffusion on the radiation damage accumulation as a function of dose rate, detrapping barrier, and impurity concentration at 1025 K.

Accumulation and recovery of lattice damage, tungs↗
DOE OSTI2024

Initial design concepts for solid boron injection in ITER

As part of ITER’s consideration to change its first wall material from beryllium to tungsten, the ITER Organization has proposed studying the feasibility of real-time solid boron injection (SBI) into the plasma to coat the walls and divertor to supplement glow discharge boronization (GDB). Boron deposits getter oxygen and reduce sputtering of tungsten from plasma facing components (PFCs). Particularly in areas with significant plasma wall interactions, boron coatings are expected to be short-lived under high performance plasma conditions. The proposed SBI system aims to maintain boron layers in these areas to avoid excessive radiation from tungsten in the plasma as a risk mitigation to ensure ITER will be able to reach and sustain Q = 10 conditions. The system will be used sparingly, as redeposition of boron can lead to significant tritium retention, which must be minimized in ITER to comply with nuclear safety concerns. SBI is proposed to limit and precisely control the amount of boron injected in real-time during plasma operation. Here, some of the design requirements and initial concepts for an SBI system in ITER are presented based on previous results carried out with SBI systems on a number of tokamaks and stellarators around the world. Previous results using SBI systems installed by PPPL have injected boron particles from 5 µm–2 mm diameter at calibrated rates of 2–200 mg/s in real-time during plasma operation on AUG, DIII-D, EAST, KSTAR, LHD, TFTR, WEST, and W7-X, leading to improved wall conditions with reduced plasma impurity concentrations and radiated power and improved plasma performance. The boron is ionized in the plasma edge and then deposited on plasma-wetted surfaces. On AUG, EAST and WEST reduced tungsten sputtering sources were observed following several discharges with SBI. Extrapolation of these SBI results are presented to estimate the amount of boron needed for wall conditioning in ITER. Real-time SBI control requirements and plasma operation scenarios for ITER are also described.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Nitrogen Vacancies Induce Fatigue in Ferroelectric Al 0.93 B 0.07 N

Wurtzite ferroelectrics (e.g., Al 0.93 B 0.07 N) are being explored for high-temperature and emerging near-, or in-compute, memory architectures due to the material advantages offered by their large remanent polarization and robust chemical stability. Despite these advantages, current Al0.93B0.07N devices do not have sufficient endurance lifetime to meet roadmap targets. To identify the defects responsible for this limited endurance, a combination of electronic measurements and optical spectroscopies characterized the evolution of defect states within Al 0.93 B 0.07 N with cycling. Ultrathin (∼10 nm) metal contacts were used to optically probe regions subject to ferroelectric switching; photoluminescence spectroscopy identified the emergence of a transition near 2.1 eV whose intensity scaled with the non-switching polarization quantified via positive-up negative-down (PUND) measurements. Accompanying thermally stimulated depolarization current (TSDC) and modulus spectroscopy measurements also observed the strengthening of a state near 2.1 eV. The origin of this feature is ascribed to transitions between a nitrogen vacancy and another defect deeper in the bandgap. Recognizing that the impurity concentration is largely fixed, strengthening of this transition indicates an increase in the number of nitrogen vacancies. Switching, therefore, creates vacancies in Al 0.93 B 0.07 N likely due to hot-atom damage induced by the aggressive fields necessary to switch wurtzite materials that ultimately limits endurance.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Crystal-chemical origins of the ultrahigh conductivity of metallic delafossites

Abstract Despite their highly anisotropic complex-oxidic nature, certain delafossite compounds ( e.g ., PdCoO 2 , PtCoO 2 ) are the most conductive oxides known, for reasons that remain poorly understood. Their room-temperature conductivity can exceed that of Au, while their low-temperature electronic mean-free-paths reach an astonishing 20 μm. It is widely accepted that these materials must be ultrapure to achieve this, although the methods for their growth (which produce only small crystals) are not typically capable of such. Here, we report a different approach to PdCoO 2 crystal growth, using chemical vapor transport methods to achieve order-of-magnitude gains in size, the highest structural qualities yet reported, and record residual resistivity ratios ( > 440). Nevertheless, detailed mass spectrometry measurements on these materials reveal that they are not ultrapure in a general sense, typically harboring 100s-of-parts-per-million impurity levels. Through quantitative crystal-chemical analyses, we resolve this apparent dichotomy, showing that the vast majority of impurities are forced to reside in the Co-O octahedral layers, leaving the conductive Pd sheets highly pure (∼1 ppm impurity concentrations). These purities are shown to be in quantitative agreement with measured residual resistivities. We thus conclude that a sublattice purification mechanism is essential to the ultrahigh low-temperature conductivity and mean-free-path of metallic delafossites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Low-loss superconducting titanium nitride grown using plasma-assisted molecular beam epitaxy

Titanium nitride (TiN) is a known superconducting material that is attractive for use as passive components in superconducting circuits for both conventional and quantum information devices. In contrast to conventional synthesis techniques, here, plasma-assisted molecular beam epitaxy is reported to produce high-quality TiN on bare silicon wafers. Using a rf-plasma source to crack the nitrogen molecules and a conventional high-temperature effusion cell for titanium, TiN growth is completed under nitrogen-rich conditions. The growth and nucleation is monitored in situ, while the structure and composition are characterized using x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and scanning transmission electron microscopy. The stoichiometric TiN (111) films sit on an amorphous nitride layer with low impurity concentrations. The films superconduct with Tc=5.4 K, and coplanar waveguide resonators are fabricated with a small center width of 6 μm that demonstrate single-photon quality factors approaching 1M and high-power quality factors over 5M without observing saturation.

Richardson, C. J. K. (ORCID:0000000188175347)↗
DOE OSTI2020

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Unintentional impurity incorporation in GaN drift layers represents a challenging issue that can limit their potential performance in vertical power devices. In this paper, we focus on studying the origins of Fe impurity incorporation in metal-organic chemical vapor deposition (MOCVD) grown GaN materials. Acting as a compensator in n-type GaN drift layers, Fe impurities can reduce the electron mobility in GaN and limit the lowest controllable doping level. Two sources, the sample cleaning process and growth susceptor, were identified as the main mechanisms of Fe incorporation in the MOCVD GaN growth process. It was found that solvent cleaning of the wafer can introduce significant Fe contamination at the growth interface, which would slowly be incorporated into the GaN epilayer, thus causing background Fe impurity as high as 10 17 cm -3 level. Moreover, the Fe impurity in the coating material on the susceptor can introduce additional Fe impurity during the growth process. Our studies revealed that the Fe impurity level could be significantly suppressed by more than two orders when an alternative cleaning process was used and the susceptor surface was fully covered by substrates. Characterization of the Fe impurity concentrations was performed via secondary ion mass spectrometry. The trap level (E C - 0.57) eV from deep-level transient spectroscopy that had previously been attributed to Fe confirmed the carrier compensation effect from Fe. Room temperature Hall mobility as high as 1007 cm 2 /V s was achieved on the MOCVD grown low-Fe GaN. Results from this work will provide guidance for achieving high purity GaN toward high performance GaN vertical power devices.

42 ENGINEERING↗
DOE OSTI2021

MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates

Single-crystal Aluminum Nitride (AlN) crystals enable the epitaxial growth of ultrawide bandgap Al(Ga)N alloys with drastically lower extended defect densities. Here, we report the plasma-MBE growth conditions for high Al-composition AlGaN alloys on single-crystal AlN substrates. An AlGaN growth guideline map is developed, leading to pseudomorphic Al x Ga 1–x N epitaxial layers with x ~0.6–1.0 Al contents at a growth rate of ~0.3 μm/h. These epitaxial layers exhibit atomic steps, indicating step flow epitaxial growth, and room-temperature band edge emission from ~4.5 to 5.9 eV. Growth conditions are identified in which the background impurity concentrations of O, C, Si, and H in the MBE layers are found to be very near or below detection limits. An interesting Si segregation and gettering behavior is observed at the epitaxial AlGaN/AlN heterojunction with significant implications for the formation and transport of 2D electron or hole gases. Well-controlled intentional Si doping ranging from ~2 × 10 17 to 3 × 10 19 atoms/cm 3 is obtained, with sharp dopant density transition profiles. In Si-doped Al 0.6 Ga 0.4 N epilayers, a room-temperature free electron concentration of ~3 × 10 19 /cm 3 , an electron mobility of ~27 cm 2 /V s, and an n-type resistivity of ~7.5 m Ω cm are obtained. Here, the implications of these findings on electronic and photonic devices on single-crystal AlN substrates are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Experimental and theoretical study of hole scattering in RF sputtered p-type Cu 2 O thin films

One of the key materials of interest for p-type oxide semiconductor thin film electronics is cuprous oxide (Cu 2 O), due to its relatively high hole mobility. Here, in this work, we use experiments, analytical models, and density functional theory calculations to study the scattering mechanisms that determine Hall mobility in two Cu 2 O samples. First, we examine a polycrystalline Cu 2 O thin film deposited by RF magnetron sputtering, and second, a single-crystalline Cu2O bulk substrate. Temperature-dependent Hall measurements indicate that neutral impurity and grain boundary scattering are dominant for the polycrystalline Cu 2 O thin film, while phonon scattering is dominant for single-crystalline Cu 2 O. Our first-principles calculations show that the room-temperature intrinsic hole mobility of Cu 2 O is 106 cm 2 V –1 s –1 , indicating the great promise of the material for p-type electronic devices. This intrinsic mobility is limited by phonon scattering, with the most dominant scattering modes having phonon energies of 88.4 and 17.1 meV. These results indicate that the key pathways to increase the hole mobility in Cu 2 O thin films are by reducing the impurity concentration and by increasing grain size. Our work thus sets the stage for the future development of high performance Cu 2 O-based p-type thin film transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy

We report on the improvement of the surface morphology of c-plane GaN films grown at high growth rates (~1 µm/h) using ammonia molecular beam epitaxy through a series of growth optimizations as well as the introduction of indium as a surfactant. The indium surfactant was expected to help with the adatom mobility and, thus, provide smoother growth surfaces. Through a combination of varying V/III ratios, In flux, and growth temperatures, an optimal condition for surface morphology, characterized by atomic force microscopy, was achieved. At higher Ga fluxes for fast growth rates (~1 µm/h and beam equivalent pressures of ~5 × 10 –7 Torr), higher ammonia flows were necessary to preserve the surface morphology. In addition, indium was an effective surfactant—reducing the roughness and improving the overall surface morphology. However, excessive indium causes the surface morphology to degrade, potentially due to the enhancement of the Ga desorption from the surface as a result of the reaction of indium with ammonia for high indium fluxes. The indium surfactant also resulted in a reduction of background Si impurity concentrations in the film. These effects allow for the growth of thick drift layers with low background dopant concentrations for vertical GaN power devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Deuterium Extraction from Helium with a Vanadium Vacuum Permeator: Commissioning of the Tritium Extraction eXperiment (TEX)

Here, the Tritium Extraction eXperiment (TEX) is a forced-convection lead-lithium (PbLi) loop in the Safety and Tritium Applied Research (STAR) facility at Idaho National Laboratory (INL) with the purpose of providing validation data for the vacuum permeator tritium extraction concept. A vanadium tube of 1000 mm length, 12.7 mm outside diameter, and 0.50 mm wall thickness is installed in the test section of TEX. The installed vanadium tube is characterized to quantify impurity concentrations, surface chemistry, and microstructure to elucidate permeation phenomena observed in experimentation. Herein, the permeation properties of the vanadium tube are characterized by measuring deuterium permeation at 300 °C, 325 °C, and 350 °C at 100 kPa, 125 kPa, and 150 kPa total pressures with 5000 ppm deuterium in helium gas mixture in a once-through flow configuration. The hydrogen isotope permeation through the vanadium tube in the test section is measured with quadrupole mass spectrometers and the hydrogen isotope concentration in the feed and retentate gas stream is measured with gas chromatography. The transient permeation results are modeled with MELCOR-TMAP, a thermal-hydraulic tritium transport code, and compared well with literature data.

70 - PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Investigation of the compatibility of pellet fueling with ELM-free H-mode plasmas in EAST tokamak

Abstract Experiments on pellet fueling have been carried out in edge localized mode (ELM)-free high-confinement mode (H-mode) plasmas with q 95 ∼ 6 in the EAST tokamak. Cryogenic deuterium pellets were injected into the ELM-free plasmas at a frequency of 10 or 5 Hz from ∼45 cm above the mid-plane on the low-field side. It is found that the ELM-free H-mode plasmas are still sustained even if both the edge and core plasma are impacted by the pellet injections (PIs). Several small ELMs would appear and the edge coherent mode accompanying the ELM-free phase fades or even disappears just after the pellet events, but the plasma would rapidly recover to the ELM-free state. Although the ELMing phase is very short, it may be an issue that still needs to be resolved in the future. Meanwhile, the 3/2 tearing mode often appearing in ELM-free discharges would be stabilized by the PIs, and the high-Z impurity concentration would be reduced during the PIs. All these results will be meaningful to International Thermonuclear Experimental Reactor and future fusion reactors.

Physics↗
DOE OSTI2023

Analysing the effects of heating and gas puffing in Proto-MPEX helicon and auxiliary heated plasmas

The Material Plasma Exposure Experiment (MPEX) is being constructed at Oak Ridge National Laboratory to investigate critical fusion reactor issues, such as plasma–material interactions (PMIs) under reactor-relevant conditions and time scales. The linear device Proto-MPEX was used as a test bed to address anticipated research and development issues associated with heating scenarios and establish the physics basis for MPEX. The SOLPS-ITER code suite has been applied to understand plasma and neutral transport in Proto-MPEX and to increase confidence in predictive simulations for MPEX. Coupling between COMSOL and SOLPS is performed to implement a 2D electron heating profile of the helicon source. The simulations show reasonable agreement with the experimental data for plasma with helicon and auxiliary electron cyclotron heating (ECH). Both Bohm and constant diffusion (D$_\perp$: 0.5 m 2 s –1 and $\chi_\perp$: 1 m 2 s –1 ) simulations show similar levels of agreement with respect to the sparse experimental data available, assuming a few per cent impurity concentration. ECH significantly increases the target electron temperature, however, the target electron density is reduced compared to helicon-only heated plasmas due to an increase in flow velocity and radial losses. The simulations show that further increasing the ECH power results in an increase in the target electron density due to increased recycling flux and ionization. The results indicate that ECH significantly enhances the target heat flux, with ECH power of 50 kW increasing the target heat flux from 0.4 to 17 MW m –2 . It is found that a small amount of gas puffing (GP) near the target plate can further increase the target heat fluxes at the higher ECH power cases, but the target heat flux is reduced at higher GP conditions due to a significant reduction in electron temperature via radiation. ECH and GP scenarios can generate a higher target flux, facilitating improved PMI studies with more reactor-relevant plasma conditions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Smooth, homogeneous, high-purity Nb 3 Sn superconducting RF resonant cavity by seed-free electrochemical synthesis

Abstract Workbench-size particle accelerators, enabled by Nb 3 Sn-based superconducting radio-frequency (SRF) cavities, hold the potential of driving scientific discovery by offering a widely accessible and affordable source of high-energy electrons and x-rays. Thin-film Nb 3 Sn RF superconductors with high quality factors, high operation temperatures, and high-field potentials are critical for these devices. However, surface roughness, non-stoichiometry, and impurities in Nb 3 Sn deposited by conventional Sn-vapor diffusion prevent them from reaching their theoretical capabilities. Here we demonstrate a seed-free electrochemical synthesis that pushes the limit of chemical and physical properties in Nb 3 Sn. Utilization of electrochemical Sn pre-deposits reduces the roughness of converted Nb 3 Sn by five times compared to typical vapor-diffused Nb 3 Sn. Quantitative mappings using chemical and atomic probes confirm improved stoichiometry and minimized impurity concentrations in electrochemically synthesized Nb 3 Sn. We have successfully applied this Nb 3 Sn to the large-scale 1.3 GHz SRF cavity and demonstrated ultra-low BCS surface resistances at multiple operation temperatures, notably lower than vapor-diffused cavities. Our smooth, homogeneous, high-purity Nb 3 Sn provides the route toward high efficiency and high fields for SRF applications under helium-free cryogenic operations.

Physics↗
DOE OSTI2024

First tungsten radiation studies in DIII-D’s ITER baseline demonstration discharges

Abstract ITER Baseline Scenario plasmas were studied in DIII-D using krypton and xenon gases as a proxy for the tungsten that will be present in ITER. These impurities were chosen for having the same radiative loss rate Lz as tungsten would exhibit in the hotter ITER core. Results show that the scenario with these core radiators spans the range of impurity concentration and W radiated fraction expected for ITER, and up to 50% higher values, explored at zero injected torque, as well as 1 Nm and full co-torque injection with T ∼ 3 Nm. Stationary discharges with duration >2–4 τ R are achieved with f rad ⩾ 30% leading to a reduction in confinement of ∼10%, and a comparison with real metal radiators in the same range of f rad shows that the higher Lz at the lower temperatures in these plasmas yields too pessimistic results on the survivability and performance of this scenario in ITER. Simulations of ITER power balance including W radiation show that with concentration up to three times higher than in the DIII-D plasmas the scenario can be stationary, remaining at acceptable core radiated fraction values.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Characterization of ELM pacing via vertical jogs on DIII-D

Edge localized mode (ELM) pacing via vertical plasma oscillations or jogging has been successfully demonstrated on DIII-D. Rapid vertical movement of the plasma toward the X-point has been shown to effectively trigger ELMs. By vertically oscillating the plasma at a rate of 10 Hz, the ELM frequency increased from ~5 Hz, the natural ELM frequency in similar DIII-D discharges, to 20 Hz. Downward jogs have been observed to trigger multiple ELMs in one cycle. ELMs triggered at higher than natural frequencies lead to smaller decreases in stored energy, from 8% to as little as below 1%. As a consequence, the peak heat flux to the divertor has been observed to be reduced by a factor of ~2. In addition, a reduction in the carbon impurity concentration has been observed. During downward jogs in the lower single null (LSN) configuration, the X-point movement is slower and smaller than the top of the plasma. As a result, a reduction in the plasma cross-section and hence volume has been observed. To understand the mechanism of ELM triggering by jogging, a toy model of the edge toroidal current has been built and tested with DIII-D experiment data. The experimental data and model suggest that when the plasma moves down toward the X-point, a net positive toroidal current is locally induced in the edge region. ELITE stability analysis suggests that this current pushes the plasma state across the peeling side of the peeling–ballooning stability boundary into the unstable region triggering ELMs.

ELM pacing↗
DOE OSTI2025

A novel liquid argon purity monitor based on 207 Bi

A novel liquid argon purity monitor based on a 207 Bi radioactive source, emitting monochromatic internal-conversion electrons, is presented. This new monitor allows for a very precise and fast measurement of the electronegative impurities concentration in liquid argon. It can be operated continuously in liquid argon TPC experiments without interfering with the main detector operation. Different drift lengths can be assembled for the proposed device, to assess a large range of liquid argon purities while minimizing systematic uncertainties. Two prototypes have been built and successfully operated in dedicated test stands. The results and performance are reported.

double-phase↗
DOE OSTI2026

Niobium's intrinsic coherence length and penetration depth revisited using low-energy muon spin spectroscopy and secondary-ion mass spectrometry

Here, we report direct, simultaneous measurements of the London penetration depth (𝜆 𝐿 ) and Bardeen-Cooper-Schrieffer coherence length (𝜉 0 ) in oxygen-doped niobium, with impurity concentrations spanning the “clean” to “dirty” limits. Two depth-resolved techniques—low-energy muon spin spectroscopy and secondary-ion mass spectrometry—were used to quantify the element's Meissner screening profiles, analyzed within a framework that accounts for nonlocal electrodynamics. The analysis indicates intrinsic length scales of 𝜆 𝐿 = 29.1⁢ (10)⁢ nm and 𝜉 0 = 39.9 ⁢(25)⁢ nm, corresponding to a Ginzburg-Landau parameter 𝜅 = 0.70⁢ (5). The obtained 𝜆 𝐿 and 𝜅 values, accurately quantified at the nanoscale, are smaller than those commonly used in applications and modeling, and indicate that clean niobium lies at the boundary between type-I and type-II superconductivity, supporting the contemporary view that its intrinsic state may be type I.

Particle Accelerator↗