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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Improved Dielectric Properties of Heterostructured Ba2.5Sr0.5TiO3 Thin Film Composites for Microwave Dielectric Devices

In the present work we have deposited MgO and Ba(sub 0.5)Sr(sub 0.5)TiO(sub 3)(BST50) thin layers in different sequences to make MgO:BST50 hetero-structured thin films. These films were characterized by X-ray diffraction and Rutherford backscattering technique and found to be highly (100) textured. The figure of merit {(C(sub0)-C(sub v)/(C(sub0-tandelta)} of the hetero-structured films was found to be higher as compared to pure BST50 films measured at 1 MHz frequency with electric field of 25.3 kV/cm. These films were used to make eight element coupled micro-strip phase shifter and characterized in a frequency range of 13-15 GHz. The high frequency figure of merit (kappa factor, defined as the ratio of degree of phase shift per dB loss) measured at around 14 GHz with electric field of 333 kV/cm has been markedly improved (around 64.28 deg/dB for hetero-structured film as compared to 24.65 deg /dB for pure film). Improvement in dielectric properties in a wide frequency range in the MgO:BST are believed to be due to the higher densification of the hetero-structured films.

Jain, M.↗
NASA NTRS1993

Beem Spectroscopy of Electron Transport Through A1As/GaAs Heterostructures

BEEM spectroscopy has been used to characterize hot carrier transport through A1As/GaAsheterostructures. The dependence of electron transmission on A1As thickness has been directlymeasured, and the position of the A1As L_1 minima, which has been subject to some uncertainty inthe past, has been determined. First-principles transmission calculations, based on a tight-bindingformalism, are compared to the results of BEEM spectroscopy.

Kaiser, W. J.↗
NASA NTRS2012

Terahertz Radiation Heterodyne Detector Using Two-Dimensional Electron Gas in a GaN Heterostructure

High-resolution submillimeter/terahertz spectroscopy is important for studying atmospheric and interstellar molecular gaseous species. It typically uses heterodyne receivers where an unknown (weak) signal is mixed with a strong signal from the local oscillator (LO) operating at a slightly different frequency. The non-linear mixer devices for this frequency range are unique and are not off-the-shelf commercial products. Three types of THz mixers are commonly used: Schottky diode, superconducting hot-electron bolometer (HEB), and superconductor-insulation-superconductor (SIS) junction. A HEB mixer based on the two-dimensional electron gas (2DEG) formed at the interface of two slightly dissimilar semiconductors was developed. This mixer can operate at temperatures between 100 and 300 K, and thus can be used with just passive radiative cooling available even on small spacecraft.

Karasik, Boris S.↗
NASA NTRS1977

Heterojunctions in photovoltaic devices

Heterojunctions have interesting optical properties which make them attractive for solar cells. Several types of heterostructure solar cells have been investigated: heteroface, abrupt heterojunction, and graded-gap heterojunction solar cells. The primary advantage of heterostructure cells is the enhanced short-wavelength response although there is potential for low-cost cells with polycrystalline material. The improvement in solar-cell performance for heterojunctions depends upon the selection of semiconductors with useful energy gaps that are closely matched in lattice-spacing and thermal-expansion coefficients. The importance of the heterojunction interface and its dependence on material properties is discussed. Various fabrication methods are discussed and their application to the different types of heterostructures. Recent performance data for material systems representative of each type of heterostructure cell are discussed and considered in terms of maximum expected performance.

Feucht, D. L.↗
NASA NTRS1981

InGaAsP/InP laser development for single-mode, high-data-rate communications

Materials studies as well as general and specific device development were carried out in the InGaAsP system. A comparison was made of three standard methods of evaluating substrate quality by means of dislocation studies. A cause of reduced yield of good wafers, the pullover of melt from one bin to the next, has been analyzed. Difficulties with reproducible zinc acceptor doping have been traced to segregation of zinc in the In/Zn alloy used for the doping source. Using EBIC measurments, the pn junction was shown to drift in location depending on factors not always under control. An analysis of contact structures by SIMS showed that the depth to which the sintered Au/Zn contact penetrates into the structure is typically 0.13 microns, or well within the cap layer and out of the p-type cladding and thus not deleterious to laser prformance. The problem of single-mode laser development was investigated and it was shown to be related to the growth habit over four different possible substrate configurations. The fabrication of constricted double heterojunctions, mesa stripe buried heterostructures, and buried heterostructures was discussed, and measurements were presented on the device properties of single-mode buried heterostructure lasers. Results include single spectral line emission at 3 mW and a threshold current of 60 mA.

Ladany, I.↗
NASA NTRS1989

Method for generation of tunable far infrared radiation from two-dimensional plasmons

Tunable far infrared radiation is produced from two-dimensional plasmons in a heterostructure, which provides large inversion-layer electron densities at the heterointerface, without the need for a metallic grating to couple out the radiation. Instead, a light interference pattern is produced on the planar surface of the heterostructure using two coherent laser beams of a wavelength selected to be strongly absorbed by the heterostructure in order to penetrate through the inversion layer. The wavelength of the far infrared radiation coupled out can then be readily tuned by varying the angle between the coherent beams, or varying the wavelength of the two interfering coherent beams, thus varying the periodicity of the photoconductivity grating to vary the wavelength of the far infrared radiation being coupled out.

Katz, Joseph↗
NASA NTRS2007

Imaging Spectrometer on a Chip

A proposed visible-light imaging spectrometer on a chip would be based on the concept of a heterostructure comprising multiple layers of silicon-based photodetectors interspersed with long-wavelength-pass optical filters. In a typical application, this heterostructure would be replicated in each pixel of an image-detecting integrated circuit of the active-pixel-sensor type (see figure). The design of the heterostructure would exploit the fact that within the visible portion of the spectrum, the characteristic depth of penetration of photons increases with wavelength. Proceeding from the front toward the back, each successive long-wavelength-pass filter would have a longer cutoff wavelength, and each successive photodetector would be made thicker to enable it to absorb a greater proportion of incident longer-wavelength photons. Incident light would pass through the first photodetector and encounter the first filter, which would reflect light having wavelengths shorter than its cutoff wavelength and pass light of longer wavelengths. A large portion of the incident and reflected shorter-wavelength light would be absorbed in the first photodetector. The light that had passed through the first photodetector/filter pair of layers would pass through the second photodetector and encounter the second filter, which would reflect light having wavelengths shorter than its cutoff wavelength while passing light of longer wavelengths. Thus, most of the light reflected by the second filter would lie in the wavelength band between the cutoff wavelengths of the first and second filters. Thus, further, most of the light absorbed in the second photodetector would lie in this wavelength band. In a similar manner, each successive photodetector would detect, predominantly, light in a successively longer wavelength band bounded by the shorter cutoff wavelength of the preceding filter and the longer cutoff wavelength of the following filter.

Wang, Yu↗
NASA NTRS2004

Electron-Spin Filters Based on the Rashba Effect

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.

Ting, David Z.-Y.↗
NASA NTRS2015

Superlattice Infrared Photodetector Research at the Jet Propulsion Laboratory

III-V semiconductors offer a highly effective platform for the development of sophisticated heterostructure-based MWIR and LWIR detectors, as exemplified by the high-performance double heterostructure (DH) nBn, XBn, and type- II superlattice infrared detectors. A key enabling design element is the unipolar barrier, which is used to implement the complementary barrier infra-red detector (CBIRD) design for increasing the collection efficiency of photo-generated carriers, and reducing dark current generation without impeding photocurrent flow. Heterostructure superlattice detectors that make effective use of unipolar barriers have demonstrated strong reduction of generation-recombination (G-R) dark current due to Shockley-Read-Hall (SRH) processes. In the last several years we solely focused on the development of antimonide based IR detectors. Recently, we demonstrated RoA values over 14,000 Ohm sq cm for a 9.9 micron cutoff device by incorporating electron-blocking and hole-blocking unipolar barriers. This device has shown 300K BLIP operation with f/2 optics at 87 K with blackbody D* of 1.1x10(exp 11) cm Hz1/2/W.

focal planes↗
NASA NTRS1981

AlGaAs/GaAs transverse junction stripe lasers with distributed feedback

Transverse junction stripe (TJS) lasers with periodic feedback were fabricated in two geometries. An interferometric and wet chemical etching technique was used to create a feedback grating across the entire pumping region for the distributed feedback (DFB) TJS laser and to create the separate distributed Bragg reflectors/DBR) for the TJS/DBR laser. The TJS/DFB laser was a double heterostructure device grown by liquid phase epitaxy (LPE) and had a third order grating etched in the top ALO.2GaO.8As layer. The grating was buried by growing an ALO.35GaO.65As layer on the grating by metal organic chemical vapor deposition (MO-CVD). The TJS/DBR laser was also fabricated in an LPE double heterostructure. The top AlGaAs layer was thinned to 0.1 micron over more than half of the laser so that the grating would be close to the GaAs active layer and optical field. Single mode operation in both configurations was obtained. The thermal shift of the laser wavelength in both cases was less than 1 Angstrom/deg K, compared to the 3 Angstrom/deg K shift of the spontaneous emission peak.

Hafich, M. J.↗
NASA NTRS1988

High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy

A high-peak-power low-threshold AlGaAs/GaAs double-heterostructure stripe laser diode on Si substrats, grown by hybrid migration-enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double-heterostructure stripe laser diodes on Si substrates, room-temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30 percent without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/sq cm when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high-quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.

Kim, Jae-Hoon↗