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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Radiation Testing Electronics with Heavy Ions-The Best Way to Hit a Target Moving Ever Exponentially Faster

In 1972, when engineers at Hughes Aircraft Corporation discovered that errors in their satellite avionics were being caused by cosmic rays (so-called single-event effects, or SEE), Moore's Law was only 7 years old. Now, more than 45 years on, the scaling that drove Moore's Law for its first 35 years has reached its limits. However, electronics technology continues to evolve exponentially and SEE remain a formidable issue for use of electronics in space. SEE occur when a single ionizing particle passes through a sensitive volume in an active semiconductor device and generates sufficient charge to cause anomalous behavior or failure in the device. Because SEE can occur at any time during the mission, the emphasis of SEE risk management methodologies is ensuring that all SEE modes in a device under test are detected by the test. Because a particle's probability of causing an SEE generally increases as the particle becomes more ionizing, heavy-ion beams have been and remain the preferred tools for elucidating SEE vulnerabilities. In this talk we briefly discuss space radiation environments and SEE mechanisms, describe SEE test methodologies and discuss current and future challenges for use of heavy-ion beams for SEE testing in an era when the continued validity of Moore's law depends on innovation rather than CMOS scaling.

space radiation environments↗
NASA NTRS2017

Proton Testing: Opportunities, Pitfalls and Puzzles

Although proton SEE testing can place constraints on some heavy-ion SEE susceptibilities, it is important to quantify residual risk that protons may not reveal all SEE susceptibilities in a system. We examine the relative strengths and limitations of proton and heavy-ion SEE testing and how these may be affected by technology scaling and high-Z materials in the device.

Protons↗
NASA NTRS1983

Single event upset (SEU) of semiconductor devices - A summary of JPL test data

The data summarized describe single event upset (bit-flips) for 60 device types having data storage elements. The data are from 15 acceleration tests with both protons and heavier ions. Tables are included summarizing the upset threshold data and listing the devices tested for heavy ion induced bit-flip and the devices tested with protons. With regard to the proton data, it is noted that the data are often limited to one proton energy, since the tests were usually motivated by the engineering requirement of comparing similar candidate devices for a system. It is noted that many of the devices exhibited no upset for the given test conditions (the maximum fluence and the maximum proton energy Ep are given for these cases). It is believed, however, that some possibility of upset usually exists because there is a slight chance that the recoil atom may receive up to 10 to 20 MeV of recoil energy (with more energy at higher Ep).

Nichols, D. K.↗
NASA NTRS2010

Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs

Single-event gate rupture (SEGR) is a potentially catastrophic failure mechanism of power MOSFETs biased in the off-state. In part due to the severity of-SEGR consequences and in part due to the difficulty of accurated SEGR rate estimation, SEGR mitigation me1hodologies emphasize risk avoidance, using heavy-ion accelerator testing to define safe operating conditions for a surface-incident linear energy transfer {LET). This "safe-operating area" (SOA) within which the device may be biased without experiencing SEGR is then often derated by a prescribed factor to ensure low risk of SEGR. Although research in 1996 indicated that such LET-based SEGR hardness requiremen1s could provide false assurance of safe operation unless one also considered· ion energy], most mission SEGR requirements are still specified in terms of surface-incident LET. Moreover, terrestrial SEGR tests at a given surface-incident LET are limited by the small number of ion species and energies available at heavy-ion accelerators. In comparison, the on-orbit radiation environment is composed of all of the naturally-occurring elements with peak fluxes at nearly GeV/nucleon energies. The primary objective of this study is to examine whether typical derating of high-energy heavy-ion accelerator test data bounds the risk for SEGR from higher-energy on-orbit ions with the mission LET requirement.

Lauenstein, Jean-Marie↗
NASA NTRS1996

Compiled Data On Single-Event Effects Caused By Heavy Ions

Report presents test data on susceptibility of new set of digital integrated circuits and other semiconductor products to single-event effects (soft errors and latchups) caused by heavy ions incident at high energies. Data used to develop generalizations for protecting electronic equipment from single-event effects. In some cases, tested parts selected as candidates for use in specific applications.

Nichols, Donald K.↗
NASA NTRS2011

Single Event Effect (SEE) Test Planning 101

This is a course on SEE Test Plan development. It is an introductory discussion of the items that go into planning an SEE test that should complement the SEE test methodology used. Material will only cover heavy ion SEE testing and not proton, LASER, or other though many of the discussed items may be applicable. While standards and guidelines for how-to perform single event effects (SEE) testing have existed almost since the first cyclotron testing, guidance on the development of SEE test plans has not been as easy to find. In this section of the short course, we attempt to rectify this lack. We consider the approach outlined here as a "living" document: mission specific constraints and new technology related issues always need to be taken into account. We note that we will use the term "test planning" in the context of those items being included in a test plan.

LaBel, Kenneth A.↗
NASA NTRS2015

Test Standard Revision Update: JESD57, "Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation"

The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. In this talk, we place this test standard into context with other relevant radiation test standards to show its importance for single-event effect radiation testing for space applications. We show the range of industry, government, and end-user party involvement in the revision. Finally, we highlight some of the key changes being made and discuss the trade-space in which setting standards must be made to be both useful and broadly adopted.

heavy ion↗
NASA NTRS2023

Texas Instrument DRV8881 2.5A Dual H-Bridge Motor Driver Heavy-Ion Single-Event Effects Test Report

The purpose of this test was to characterize the single-event effects (SEE) susceptibility of the Texas Instrument (TI) DRV8881 2.5A Dual H-Bridge Motor Driver. The device’s output was monitored for changes during exposure to heavy-ions at Lawrence Berkeley National Laboratory (LBNL) 88-inch Cyclotron. The main goal of testing was to test for destructive SEEs. Nondestructive SEEs were recorded during testing but not fully characterized. Testing was performed on November 9th and 11th, 2022.

Thomas A. Carstens↗
NASA NTRS2011

Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR susceptibility is explored. SEGR evaluation of gamma-irradiated power MOSFETs suggests a non-significant SEGR susceptibility enhancement due to accumulated dose from gamma rays. During SEGR testing, an unexpected enhanced dose effect from heavy-ion irradiation was detected. We demonstrate that this effect could be due to direct ionization by two or more ions at the same channel location. The probability on-orbit for such an occurrence is near-zero given the low heavy-ion fluence over a typical mission lifetime, and did not affect SEGR susceptibility. The results of this work can be used to bound the risk of SEGR in power MOSFETs considered for insertion into spacecraft and instruments.

Lauenstein, Jean-Marie↗
NASA NTRS1982

Single event upset sensitivity of low power Schottky devices

Data taken from tests involving heavy ions in the Berkeley 88 in. cyclotron being directed at low power Schottky barrier devices are reported. The tests also included trials in the Harvard cyclotron with 130 MeV protons, and at the U.C. Davis cyclotron using 56 MeV protons. The experiments were performed to study the single event upsets in MSI logic devices containing flip-flops. Results are presented of single-event upsets (SEU) causing functional degradation observed in post-exposure tests of six different devices. The effectiveness of the particles in producing SEUs in logic device functioning was found to be directly proportional to the proton energy. Shielding was determined to offer negligible protection from the particle bombardment. The results are considered significant for the design and fabrication of LS devices for space applications.

Price, W. E.↗
NASA NTRS1986

Verification of a SEU model for advanced 1-micron CMOS structures using heavy ions

Modeling and test results are reported for 1 micron CMOS circuits. Analytical predictions are correlated with experimental data, and sensitivities to process and design variations are discussed. Unique features involved in predicting the SEU performance of these devices are described. The results show that the critical charge for upset exhibits a strong dependence on pulse width for very fast devices, and upset predictions must factor in the pulse shape. Acceptable SEU error rates can be achieved for a 1 micron bulk CMOS process. A thin retrograde well provides complete SEU immunity for N channel hits at normal incidence angle. Source interconnect resistance can be important parameter in determining upset rates, and Cf-252 testing can be a valuable tool for cost-effective SEU testing.

Cable, J. S.↗
NASA NTRS2021

The Use of High Energy Heavy Ion Facilities for Single Event Effects (SEE) Testing: A Perspective on Return on Investment (ROI)

With challenges related to testing highly complex integrated circuits as well as entire systems continuing to grow, the use of higher energy heavy ions for single-event effects (SEE) testing becomes a critical technical need. This presentation, however, focuses only partially on the technical side with the main emphasis on the economics of using a high-energy heavy ion beam and comparing via notional cost models for testing.

Kenneth A. LaBel↗
NASA NTRSDate not supplied

Space Radiation Effects on SiC Power Device Reliability

Heavy-ion radiation can result in silicon carbide power device degradation and/or catastrophic failure. Test procedures and data interpretation must consider the impact that heavy-ion induced off-state leakage current increases will have on subsequent single-event effect susceptibility and testability. On orbit, reliable performance in the presence of increased off-state leakage currents due to cumulative ion-induced non-catastrophic single-event effects must be assured over the mission lifetime. This work presents a large body of heavy-ion test data for different diode, power MOSFET, and JFET devices. Susceptibility to single-event effects is compared between SiC and Si power devices. Initial recommendations on heavy-ion radiation test methods for silicon carbide power devices are made and radiation hardness assurance is discussed with the goal of moving one step closer to reliably getting this technology off the ground into a broad array of spacecraft and instruments that will benefit from its unique capabilities.

diode↗
NASA NTRS2004

RHrFPGA Radiation-Hardened Re-programmable Field-Programmable Gate Array

Viewgraphs on the development of the Radiation-Hardened Re-programmable Field-Programmable Gate Array (RHrFPGA) are presented. The topics include: 1) Radiation Test Suite; 2) Testing Interface; 3) Test Configuration; 4) Facilities; 5) Test Programs; 6) Test Procedure; and 7) Test Results. A summary of heavy ion and proton testing is also included.

Sanders, A. B.↗