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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Single-event effects (SEE) and total ionizing dose (TID) data are presented for several automotive- and industrial-grade solid-state drives, and the effects of different active test configurations on hardness assurance are explored.
Heavy-ion radiation can result in silicon carbide power device degradation and/or catastrophic failure. Test procedures and data interpretation must consider the impact that heavy-ion induced off-state leakage current increases will have on subsequent single-event effect susceptibility and testability. On orbit, reliable performance in the presence of increased off-state leakage currents due to cumulative ion-induced non-catastrophic single-event effects must be assured over the mission lifetime. This work presents a large body of heavy-ion test data for different diode, power MOSFET, and JFET devices. Susceptibility to single-event effects is compared between SiC and Si power devices. Initial recommendations on heavy-ion radiation test methods for silicon carbide power devices are made and radiation hardness assurance is discussed with the goal of moving one step closer to reliably getting this technology off the ground into a broad array of spacecraft and instruments that will benefit from its unique capabilities.
The rediation effects and testing programs in place at the Jet Propulsion Laboratory support the insertion of traditional, advanced, and emerging microelectronic and photonic technologies in NASA systems through research and testing that enhances the radiation hardness assurance (RHA) of these technologies. With the decreasing availability of radiation hardened electronics and the new NASA paradigm of faster, more aggressive and less expensive space missions, there has been an increasing emphasis on using high performance commercial microelectronic parts and circuits in NASA spacecraft.
Hardness assurance test results of Intel state-of-the-art 14nm “Broadwell” U-series processor / System-on-a-Chip (SoC) for total ionizing dose (TID) are presented, along with exploratory results from trials at a medical proton facility. Test method builds upon previous efforts [1] by utilizing commercial laptop motherboards and software stress applications as opposed to more traditional automated test equipment (ATE).
Hardness assurance test results of Intel state-of-the-art 14nm Broadwell U-series processor System-on-a-Chip (SoC) for total dose are presented, along with first-look exploratory results from trials at a medical proton facility. Test method builds upon previous efforts by utilizing commercial laptop motherboards and software stress applications as opposed to more traditional automated test equipment (ATE).
This paper introduces the overall design plan, development timeline, and preliminary progress of the Autonomous Pit Exploration System project. This project aims to develop an advanced multi-robot system for the efficient inspection of nuclear waste-storage tank pits. The project is structured into three phases: Phase 1 involves data collection and interface definition in collaboration with Hanford Site experts and university partners, focusing on tank riser geometry and hardware solutions. Phase 2 includes the selection of sensors and robot components, detailed mechanical design, and prototyping. Phase 3 integrates all components into a cohesive system managed by a master control package which also incorporates digital twin and surrogate models, and culminates in comprehensive testing and validation at a simulated tank pit at the Idaho National Laboratory. Additionally, the system’s communication design ensures coordinated operation through shared data, power, and control signals. For transportation and deployment, an electric vehicle (EV) is chosen to support the system for a full 10 h shift with better regulatory compliance for field deployment. A telescopic arm design is selected for its simple configuration and superior reach capability and controllability. Preliminary testing utilizes an educational robot to demonstrate the feasibility of splitting computational tasks between edge and cloud computers. Successful simultaneous localization and mapping (SLAM) tasks validate our distributed computing approach. More design considerations are also discussed, including radiation hardness assurance, SLAM performance, software transferability, and digital twinning strategies.
This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.
The ionizing radiation effects of electrons on bipolar transistors have been analyzed using the data base from the Voyager project. The data were subjected to statistical analysis, leading to a quantitative characterization of the product and to data on confidence limits which will be useful for circuit design purposes. These newly-developed methods may form the basis for a radiation hardness assurance system. In addition, an attempt was made to identify the causes of the large variations in the sensitivity observed on different product lines. This included a limited construction analysis and a determination of significant design and processes variables, as well as suggested remedies for improving the tolerance of the devices to radiation.
The conference covered the radiation effects on devices, circuits, and systems, physics and basic radiation effects in materials, dosimetry and radiation transport, spacecraft charging, and space radiation effects. Other subjects included single particle upset phenomena, systems-generated electromagnetic pulse phenomena, fabrication of hardened components, testing techniques, and hardness assurance.
Single event upset phenomena are discussed, taking into account cosmic ray induced errors in IIL microprocessors and logic devices, single event upsets in NMOS microprocessors, a prediction model for bipolar RAMs in a high energy ion/proton environment, the search for neutron-induced hard errors in VLSI structures, soft errors due to protons in the radiation belt, and the use of an ion microbeam to study single event upsets in microcircuits. Basic mechanisms in materials and devices are examined, giving attention to gamma induced noise in CCD's, the annealing of MOS capacitors, an analysis of photobleaching techniques for the radiation hardening of fiber optic data links, a hardened field insulator, the simulation of radiation damage in solids, and the manufacturing of radiation resistant optical fibers. Energy deposition and dosimetry is considered along with SGEMP/IEMP, radiation effects in devices, space radiation effects and spacecraft charging, EMP/SREMP, and aspects of fabrication, testing, and hardness assurance.
The results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.
Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.
Radiation effects on electronic systems and devices (particularly spacecraft systems) are examined with attention given to such topics as radiation transport, energy deposition, and charge collection; single-event phenomena; basic mechanisms of radiation effects in structures and materials; and EMP phenomena. Also considered are radiation effects in integrated circuits, spacecraft charging and space radiation effects, hardness assurance for devices and systems, and SGEMP/IEMP phenomena.
Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.
The present conference on the effects of nuclear and space radiation on electronic hardware gives attention to topics in the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, electronic device radiation hardness assurance, SOI/SOS radiation effects, spacecraft charging and space radiation, IC radiation effects and hardening, single-event upset (SEU) phenomena and hardening, and EMP/SGEMP/IEMP phenomena. Specific treatments encompass the generation of interface states by ionizing radiation in very thin MOS oxides, the microdosimetry of meson energy deposited on 1-micron sites in Si, total dose radiation and engineering studies, plasma interactions with biased concentrator solar cells, the transient imprint memory effect in MOS memories, mechanisms leading to SEU, and the vaporization and breakdown of thin columns of water.
Various papers on nuclear and space radiation effects are presented. The general topics addressed include: basic mechanisms of radiation effects, single-event phenomena, temperature and field effects, modeling and characterization of radiation effects, IC radiation effects and hardening, and EMP/SGEMP/IEMP phenomena. Also considered are: dosimetry/energy-dependent effects, sensors in and for radiation environments, spacecraft charging and space radiation effects, radiation effects and devices, radiation effects on isolation technologies, and hardness assurance and testing techniques.
The effects of nuclear and space radiation on the performance of electronic devices are discussed in reviews and reports of recent investigations. Topics addressed include the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, sensors in and for radiation environments, EMP/SGEMP/IEMP phenomena, radiation effects on isolation technologies, and spacecraft charging and space radiation effects. Consideration is given to device radiation effects and hardening, hardness assurance and testing techniques, IC radiation effects and hardening, and single-event phenomena.
Various papers on nuclear science are presented. The general topics addressed include: basic mechanics of radiation effects, dosimetry and energy-dependent effects, hardness assurance and testing techniques, spacecraft charging and space radiation effects, EMP/SGEMP/IEMP phenomena, device radiation effects and hardening, radiation effects on isolation technologies, IC radiation effects and hardening, and single-event phenomena.