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At least 91 records · Page 5

Time-Resolved Line Shapes of Single Quantum Emitters via Machine Learned Photon Correlations

Solid-state single-photon emitters (SPEs) are quantum light sources that combine atomlike optical properties with solid-state integration and fabrication capabilities. SPEs are hindered by spectral diffusion, where the emitter’s surrounding environment induces random energy fluctuations. Timescales of spectral diffusion span nanoseconds to minutes and require probing single emitters to remove ensemble averaging. Photon correlation Fourier spectroscopy (PCFS) can be used to measure time-resolved single emitter line shapes, but is hindered by poor signal-to-noise ratio in the measured correlation functions at early times due to low photon counts. Here, we develop a framework to simulate PCFS correlation functions directly from diffusing spectra that match well with experimental data for single colloidal quantum dots. We use these simulated datasets to train a deep ensemble autoencoder machine learning model that outputs accurate, noiseless, and probabilistic reconstructions of the noisy correlations. Using this model, we obtain reconstructed time-resolved single dot emission line shapes at timescales as low as 10 ns, which are otherwise completely obscured by noise. This enables PCFS to extract optical coherence times on the same timescales as Hong-Ou-Mandel two-photon interference, but with the advantage of providing spectral information in addition to estimates of photon indistinguishability. Further, our machine learning approach is broadly applicable to different photon correlation spectroscopy techniques and SPE systems, offering an enhanced tool for probing single emitter line shapes on previously inaccessible timescales.

74 ATOMIC AND MOLECULAR PHYSICS↗

Carbon trimer as a 2 eV single-photon emitter candidate in hexagonal boron nitride: A first-principles study

The generation of single-photon emitters in hexagonal boron nitride around 2 eV emission is experimentally well recognized; however, the atomic nature of these emitters is unknown. In this Letter, we use first-principles calculations to demonstrate that carbon trimer substitutional defect (C 2 C N ) is a possible source of 2 eV single-photon emitter in hBN. Here, we showcase the calculations of a complete set of static and dynamical properties related to quantum defects, including exciton-defect couplings and electron-phonon interactions, from both density functional theory and many-body perturbation theory. In particular, we show that it is critical to consider both radiative and nonradiative processes when comparing with experimental lifetime for known 2 eV emitters. We find that C 2 C N has several key physical properties matching the ones of experimentally observed single-photon emitters. These include the zero-phonon line (2.13 eV), Huang-Rhys factor (1.35), photoluminescence lifetime (2.19 ns), phonon-sideband energy (180 meV), and photoluminescence spectrum. The identification of defect candidates for 2 eV emission paves the way for controllable single-photon emission generation.

36 MATERIALS SCIENCE↗

Closed-loop electron-beam-induced spectroscopy and nanofabrication around individual quantum emitters

Color centers in diamond play a central role in the development of quantum photonic technologies, and their importance is only expected to grow in the near future. For many quantum applications, high collection efficiency from individual emitters is required, but the refractive index mismatch between diamond and air limits the optimal collection efficiency with conventional diamond device geometries. While different out-coupling methods with near-unity efficiency exist, many have yet to be realized due to current limitations in nanofabrication methods, especially for mechanically hard materials like diamond. Here, we leverage electron-beam-induced etching to modify Sn-implanted diamond quantum microchiplets containing integrated waveguides with a width and thickness of 280 nm and 200 nm, respectively. This approach allows for simultaneous high-resolution imaging and modification of the host matrix with an open geometry and direct writing. When coupled with the cathodoluminescence signal generated from the electron–emitter interactions, we can monitor the enhancement of the quantum emitters in real-time with nanoscale spatial resolution. The operando cathodoluminescence measurement and fabrication around single photon emitters demonstrated here provide a new foundation for the potential control of emitter–cavity interactions in integrated quantum photonics.

36 MATERIALS SCIENCE↗

Single‐photon emitters in PECVD‐grown silicon nitride films: from material growth to photophysical properties

Abstract Silicon nitride (SiN) is a key material for quantum photonics due to its wide transparency window, high refractive index, low optical losses, and semiconductor foundry compatibility. We study the formation of single‐photon emitters in SiN films grown by plasma‐enhanced chemical vapor deposition (PECVD), exploring their photophysical properties and dependence on growth conditions. Emitters were observed across the entire range of nitrogen‐to‐silicon precursor ratios, from silicon‐rich to nitrogen‐rich conditions, enabled by the low background fluorescence. We demonstrate single‐photon emitters in SiN films with a higher refractive index (1.8–1.9) compared to our previous reports (∼1.7). Notably, nitrogen‐rich, thinner films yield particularly bright emitters with shorter emission lifetimes, likely due to more efficient annealing. Silicon‐rich SiN films exhibit red‐shifted emission, suggesting that composition may provide a mechanism for wavelength tuning. These findings establish the feasibility of emitters formation in foundry standard PECVD tools, advancing the scalability and lab‐to‐fab transition of SiN‐based quantum photonic technologies.

Materials Science↗

Chemical regeneration of emitter surface increases thermionic diode life

Chemical regeneration of sublimated emitter electrode increases the operating efficiency and life of thermionic diodes. A gas which forms chemical compounds with the sublimated emitter material is introduced into the space between the emitter and the collector. The compounds migrate to the emitter where they decompose and redeposit the emitter material.

Breiteieser, R.↗

Design and testing a high fuel volume fraction, externally finned, thermionic emitter.

A prototypical, high fuel volume fraction, thermionic emitter body was designed and tested. The emitter body is all tungsten, with a 1.40-cm ID, a 3.23-cm OD, and eight full-length axial fins. The emitter thickness is 0.15 cm while the fins and outer clad are 0.075 cm thick. Different methods of fabrication were used in making the test samples. Stress analysis was performed with a three-dimensional elastic code. Thermal testing of the samples, duplicating calculated radial temperature gradients, heatup and cooldown rates, and emitter body temperatures in operation, was performed with no structural failures noted (six heatup and cooldown cycles per sample). Further emitter analysis and testing is planned.

Peelgren, M. L.↗

Spectral and Total Normal Emittance of Reusable Surface Insulation Materials

Measurements of spectral and total normal emittance have been made on three types of reusable external insulation materials proposed for space shuttles. Emittances were measured in the spectral range 1 to 15 micrometer at temperatures of 800 K and 1100 K using a radiometric measurement technique. Results indicated that the total normal emittance of these materials was less than 0.8 between 800 K and 1300 K. The total normal emittance decreased with increasing temperature. The three ceramic coating candidate materials exhibited a similar spectral emittance distribution.

Kantsios, A. G.↗

Performance of a thermionic converter module utilizing emitter and collector heat pipes

A thermionic converter module simulating a configuration for an out-of-core thermionic nuclear reactor was designed, fabricated, and tested. The module consists of three cylindrical thermionic converters. The tungsten emitter of the converter is heated by a tungsten, lithium heat pipe. The emitter heat pipes are immersed in a furnace, insulated by MULTI-FOIL thermal insulation, and heated by tungsten radiation filaments. The performance of each thermionic converter was characterized before assembly into the module. Dynamic voltage, current curves were taken using a 60 Hz sweep and computerized data acquisition over a range of emitter, collector, and cesium-reservoir temperatures. An output power of 215 W was observed at an emitter temperature of 1750 K and a collector temperature of 855 K for a two diode module. With a three diode module, an output power of 270 W was observed at an average emitter temperature of 1800 K and a Collector temperature of 875 K.

Kroeger, E. W.↗

Effects of atmosphere, temperature and emittance on reflected and emitted energy

The effects of temperature and emittance on the relative magnitude of reflected energy and emitter energy from a target including atmospheric effects was studied. From the calculations of energy reflected and emitted from a target including atmospheric effects using LOWTRAN 3 programs for midlatitude summer model, the following conclusions were obtained: (1) At 3.5 micrometers q is considerably less than 1 except at high temperatures and for high emittance; (2) at 4 micrometers q is of the order of magnitude equal to 1 for most targets; and (3) at 4.6 micrometers, q is considerably greater than 1 at high temperatures and high emittance. In addition, incident atmospheric emission reflected from the target was found to be negligible except for targets having low temperature and low emittance.

Kumar, R.↗

Transit time and charge storage measurements in heavily doped emitters

A first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer is reported. The value was obtained by a high-frequency conductance method recently developed and used for low-doped Si. The transit time coupled with the steady-state current enables the determination of the quasi-static charge stored in the emitter and the quasi-static emitter capacitance. Using a transport model, from the measured transit time, the value for the minority-carrier diffusion coefficient and mobility is estimated. The measurements were done using a heavily doped emitter of the Si p(+)-n-p bipolar transistor. The new result indicates that the position-averaged minority-carrier diffusion coefficients may be much smaller than the corresponding majority-carrier values for emitters having a concentration ranging from about 3 x 10 to the 19th per cu cm to 10 to the 20th per cu cm.

Neugroschel, A.↗

Floating emitter solar cell

A front surface contact floating emitter solar cell transistor is provided in a semiconductor body (n-type), in which floating emitter sections (p-type) are diffused or implanted in the front surface. Between the emitter sections, a further section is diffused or implanted in the front surface, but isolated from the floating emitter sections, for use either as a base contact to the n-type semiconductor body, in which case the section is doped n+, or as a collector for the adjacent emitter sections.

Chih, Sah↗

Enhanced thermal emittance of space radiators by ion-discharge chamber texturing

The discharge chamber of a 30-cm argon ion source was successfully used to texture potential space radiator materials for the purpose of obtaining values of thermal emittance greater than 0.85 at 700 and 900 K. Some samples were also treated in acid prior to texturing. To evaluate the durability of the textured materials to atomic oxygen, samples were exposed to an RF air plasma environment. The spectral emittance between 2.0 anf 15.0 microns was measured before and after the textured materials were exposed to the plasma asher. The results indicate that copper with extremely high values of emittance after texturing (0.978 and 0.983) at 700 and 900 K, respectively,did not change its values of emittance after ashing, whereas the emittance of stainless steel fell below 0.85 after ashing. These data, along with scanning electron photomicrographs, and the results of texturing and ashing titanium and Nb(1)Zr are presented .

Mirtich, Michael J.↗

Arc-textured metal surfaces for high thermal emittance space radiators

Carbon arc electrical discharges struck across the surfaces of metals such as Nb-1 percent Zr, alter the morphology to produce a high thermal emittance surface. Metal from the surface and carbon from the arc electrode vaporize during arcing, and then condense on the metal surface to produce a microscopically rough surface having a high thermal emittance. Quantitative spectral reflectance measurements from 0.33 to 15 microns were made on metal surfaces which were carbon arc treated in an inert gas environment. The resulting spectral reflectance data were then used to calculate thermal emittance as a function of temperature for various methods of arc treatment. The results of arc treatment on various metals are presented for both ac and dc arcs. Surface characterization data, including thermal emittance as a function of temperature, scanning electron microscopy, and atomic oxygen durability, are also presented. The ac arc texturing was found to increase the thermal emittance at 800 K from 0.05 to 0.70.

Banks, Bruce A.↗

Selective Emitters

This invention relates to a small particle selective emitter for converting thermal energy into narrow band radiation with high efficiency. The small particle selective emitter is used in combination with a photovoltaic array to provide a thermal to electrical energy conversion device. An energy conversion apparatus of this type is called a thermo-photovoltaic device. In the first embodiment, small diameter particles of a rare earth oxide are suspended in an inert gas enclosed between concentric cylinders. The rare earth oxides are used because they have the desired property of large emittance in a narrow wavelength band and small emittance outside the band. However, it should be emphasized that it is the smallness of the particles that enhances the radiation property. The small particle selective emitter is surrounded by a photovoltaic array. In an alternate embodiment, the small particle gas mixture is circulated through a thermal energy source. This thermal energy source can be a nuclear reactor, solar receiver, or combustor of a fossil fuel.

Chubb, Donald L.↗

Field-emitter arrays for vacuum microelectronics

An ongoing program on microfabricated field-emitter arrays has produced a gated field-emitter tip structure with submicrometer dimensions and techniques for fabricating emitter arrays with tip packaging densities of up to 1.5 x 10 exp 7 tips/sq cm. Arrays have been fabricated over areas varying from a few micrometers up to 13 cm in diameter. Very small overall emitter size, materials selection, and rigorous emitter-tip processing procedures have contributed to reducing the potential required for field emission to tens of volts. Emission current densities of up to 100 A/sq cm have been achieved with small arrays of tips, and 100-mA total emission is commonly produced with arrays 1 mm in diameter containing 10,000 tips. Transconductances of 5.0 micro-S per tip have been demonstrated, indicating that 50 S/sq cm should be achievable with tip densities of 10 exp 7 tips/sq cm. Details of the cathode arrays and a variety of performance characteristics are discussed.

Spindt, C. A.↗

Radiative Performance of Rare Earth Garnet Thin Film Selective Emitters

In this paper we present the first emitter efficiency results for the thin film 40 percent Er-1.5 percent Ho YAG (Yttrium Aluminum Garnet, Y3Al5O12) and 25 percent Ho YAG selective emitter at 1500 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2 less than lambda less than 3.2 microns). Emitter efficiency and power density are significantly improved with the addition of multiple rare earth dopants. Predicted efficiency results are presented for an optimized (equal power density in the Er, (4)I(sub 15/2)-(4)I(sub 13/2) at 1.5 microns, and Ho, (5)I(sub 7)-(5)I(sub 8) at 2.0 micron emission bands) Er-Ho YAG thin film selective emitter.

Lowe, Roland A.↗

Effects of Ambient High Temperature Exposure on Alumina-Titania High Emittance Surfaces for Solar Dynamic Systems

Solar dynamic (SD) space power systems require durable, high emittance surfaces on a number of critical components, such as heat receiver interior surfaces and parasitic load radiator (PLR) elements. To enhance surface characteristics, an alumina-titania coating has been applied to 500 heat receiver thermal energy containment canisters and the PLR of NASA Lewis Research Center's (LeRC) 2 kW SD ground test demonstrator (GTD). The alumina-titania coating was chosen because it had been found to maintain its high emittance under vacuum (less than or equal to 10(exp -6) torr) at high temperatures (1457 F (827 C)) for an extended period (approximately 2,700 hours). However, preflight verification of SD systems components, such as the PLR require operation at ambient pressure and high temperatures. Therefore, the purpose of this research was to evaluate the durability of the alumina-titania coating at high temperature in air. Fifteen of sixteen alumina-titania coated Incoloy samples were exposed to high temperatures (600 F (316 C) to l500 F (816 C)) for various durations (2 to 32 hours). Samples, were characterized prior to and after heat treatment for reflectance, solar absorptance, room temperature emittance and emittance at 1,200 F (649 C). Samples were also examined to detect physical defects and to determine surface chemistry using optical microscopy, scanning electron microscopy operated with an energy dispersive spectroscopy (EDS) system, and x ray photoelectron spectroscopy (XPS). Visual examination of the heat-treated samples showed a whitening of samples exposed to temperatures of 1,000 F (538 C) and above. Correspondingly, the optical properties of these samples had degraded. A sample exposed to 1,500 F (816 C) for 24 hours had whitened and the thermal emittance at 1,200 F (649 C) had decreased from the non-heat treated value of 0.94 to 0.62. The coating on this sample had become embrittled with spalling off the substrate noticeable at several locations. Based on this research it is recommended that preflight testing of SD components with alumina-titania coatings be restricted to temperatures no greater than 600 F (316 C) in air to avoid optical degradation. Moreover, components with the alumina-titania coating are likely to experience optical property degradation with direct atomic oxygen exposure in space.

deGroh, Kim K.↗

Rare-Earth Oxide (Yb2O3) Selective Emitter Fabrication and Evaluation

This investigation involved the fabrication and evaluation of rare-earth oxide selective emitters. The first goal of this study was to successfully fabricate the selective emitter samples using paper and ceramic materials processing techniques. The resulting microstructure was also analyzed using a Scanning Electron Microscope. All selective emitter samples fabricated for this study were made with ytterbium oxide (Yb2O3). The second goal of this study involved the measurement of the spectral emission and the radiated power of all the selective emitter samples. The final goal of this study involved the direct comparison of the radiated power emitted by the selective emitter samples to that of a standard blackbody at the same temperature and within the same wavelength range.

Jennette, Bryan↗