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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Spin splitting of dopant edge state in magnetic zigzag graphene nanoribbons

Spin-ordered electronic states in hydrogen-terminated zigzag nanographene give rise to magnetic quantum phenomena that have sparked renewed interest in carbon-based spintronics. Zigzag graphene nanoribbons (ZGNRs)-quasi one-dimensional semiconducting strips of graphene bounded by parallel zigzag edges-host intrinsic electronic edge states that are ferromagnetically ordered along the edges of the ribbon and antiferromagnetically coupled across its width. Despite recent advances in the bottom-up synthesis of GNRs featuring symmetry protected topological phases and even metallic zero mode bands, the unique magnetic edge structure of ZGNRs has long been obscured from direct observation by a strong hybridization of the zigzag edge states with the surface states of the underlying support. Here, we present a general technique to thermodynamically stabilize and electronically decouple the highly reactive spin-polarized edge states by introducing a superlattice of substitutional N-atom dopants along the edges of a ZGNR. First-principles GW calculations and scanning tunnelling spectroscopy reveal a giant spin splitting of low-lying nitrogen lone-pair flat bands by an exchange field (~850 tesla) induced by the ferromagnetically ordered edge states of ZGNRs. Finally, our findings directly corroborate the nature of the predicted emergent magnetic order in ZGNRs and provide a robust platform for their exploration and functional integration into nanoscale sensing and logic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Investigating a novel magnetic MAX phase nitride and its (001)-surfaces

We report magnetic MAX phases including their surfaces exhibit promising functional properties for magneto-electronic devices and self-monitoring smart coatings. By employing an integrated ab-initio approach, here we investigate a new member of the MAX phase, Mn 2 AuN. This compound satisfies the chemical, mechanical and dynamical stability criteria, leading to a possibility of its synthesis, and exhibits electronic and elastic anisotropy. The identified ferromagnetic configuration (with high Curie temperature) is the most energetically favorable among the five different spin configurations i.e., non-magnetic, ferromagnetic, and three anti-ferromagnetic. From the coatings perspective, the surface properties of Mn 2 AuN(001) terminations are investigated considering the four possible surface termination models. Remarkably, the magnetism does not get vanished even after cleaving the bulk unit cell into the (001)-surfaces. While evaluating the surface energetics in different chemical potentials, the N-001 terminated surface comes out to be the most stable termination contrasting with carbide MAX phases and is the only termination that exhibits the magnetic characteristics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Defects in Layered van der Waals Heterostructures: Implications for Thermoelectrics

Layered van der Waals heterostructures provide extraordinary opportunities for applications such as thermoelectrics and allow for tunability of optical and electronic properties. The performance of devices made from these heterostructures will depend on their properties, which are sensitive to the nanoarchitecture (constituent layer thicknesses, layer sequence, etc.). However, performance will also be impacted by defects, which will vary in concentration and identity with the nanoarchitecture and preparation conditions. Here, we identify several types of defects and propose mechanisms for their formation, focusing on compounds in the ([SnSe] 1+δ ) m (TiSe 2 ) n system prepared using the modulated elemental reactants method. The defects were observed by atomic resolution high-angle annular dark-field scanning transmission electron microscopy and can be broadly categorized into those that form domain boundaries as a result of rotational disorder from the self-assembly process and those that are layer-thickness-related and result from local or global deviations in the amount of material deposited. Furthermore, defect type and density were found to depend on the nanoarchitecture of the heterostructure. Categorizing the defects provides insights into defect formation in these van der Waals layered heterostructures and suggests strategies for controlling their concentrations. Strategies for controlling defect type and concentration are proposed, which would have implications for transport properties for applications in thermoelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electronic thermal transport measurement in low-dimensional materials with graphene non-local noise thermometry

In low-dimensional systems, the combination of reduced dimensionality, strong interactions and topology has led to a growing number of many-body quantum phenomena. Thermal transport, which is sensitive to all energy-carrying degrees of freedom, provides a discriminating probe of emergent excitations in quantum materials and devices. However, thermal transport measurements in low dimensions are dominated by the phonon contribution of the lattice, requiring an experimental approach to isolate the electronic thermal conductance. In this work we measured non-local voltage fluctuations in a multi-terminal device to reveal the electronic heat transported across a mesoscopic bridge made of low-dimensional materials. Using two-dimensional graphene as a noise thermometer, we measured the quantitative electronic thermal conductance of graphene and carbon nanotubes up to 70 K, achieving a precision of ~1% of the thermal conductance quantum at 5 K. Employing linear and nonlinear thermal transport, we observed signatures of energy transport mediated by long-range interactions in one-dimensional electron systems, in agreement with a theoretical model.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Localizing individual exciton on a quantum Hall antidot

Excitons are bond states of electron-hole pairs formed through Coulomb interaction. While excitonic phases have been widely studied in semiconductors and quantum Hall double-layers, prior works largely focus on bulk systems with large number of excitons, limiting their applications in quantum devices. Here, employing the approach of quantum Hall antidot with two spatially separated edge channels, we demonstrate a type of quantum Hall quasiparticle exciton which represents a quantum-coherent bound state of an electron and a hole situated on their corresponding edges coupled through intralayer tunneling and Coulomb interaction. This approach allows localization and electrical tuning of individual quantum Hall excitons. Quantum-coherent dynamics of exciton are observed in the gate-dependence of antidot conductance peaks near the electron-hole resonance, which signifies a quantum superposition of vacuum- and electron-hole pairing states. Modeling the electron-hole pair as a coupled two-level system, semi-quantitative understanding of experimental observations is achieved. This work opens avenues for creating quantum systems of multiple quantum Hall quasiparticles.

36 MATERIALS SCIENCE↗
NASA NTRS2005

Pd/CeO2/SiC Chemical Sensors

The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature <450 C for these sensor structures. The present proposal to incorporate interfacial CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd/CeO2/SiC Schottky diode, the nanostructured interfacial CeO2 layer would contribute to thermal stability and, by contributing to transfer of electrons, would also contribute to sensitivity.

Lu, Weijie↗
DOE OSTI2025

Signatures of chiral superconductivity in rhombohedral graphene

Chiral superconductors are unconventional superconducting states that break time-reversal symmetry spontaneously and typically feature Cooper pairing at non-zero angular momentum. Such states may host Majorana fermions and provide an important platform for topological physics research and fault-tolerant quantum computing. Despite intensive search and prolonged studies of several candidate systems, chiral superconductivity has remained elusive so far. Here we report the discovery of robust unconventional superconductivity in rhombohedral tetralayer and pentalayer graphene without moiré superlattice effects. We observed two superconducting states in the gate-induced flat conduction bands with T c up to 300 mK and charge density n e down to 2.4 ×10 11 cm −2 in five devices. Spontaneous time-reversal-symmetry breaking (TRSB) owing to orbital motion of the electron is found and several observations indicate the chiral nature of these superconducting states, including: (1) in the superconducting state, R xx shows magnetic hysteresis in varying out-of-plane magnetic field B ⊥ —absent from all other superconductors; (2) the superconducting states are robust against in-plane magnetic field and are developed within a spin-polarized and valley-polarized quarter-metal (QM) phase; (3) the normal states show anomalous Hall signals at zero magnetic field and magnetic hysteresis. Here, we also observed a critical B ⊥ of 1.4 T, higher than any graphene superconductivity, which indicates a strong-coupling superconductivity close to the Bardeen–Cooper–Schrieffer (BCS)–Bose–Einstein condensate (BEC) crossover. Our observations establish a pure carbon material for the study of topological superconductivity, with the promise to explore Majorana modes and topological quantum computing.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices

Here, we report correlated nanoscale mapping of the structure, composition, and properties of regrown GaN p-n junctions to identify how etching and non-planar regrowth processes limit diode performance via the introduction of unintentional dopants and defect states. p-GaN was selectively regrown in n-GaN trenches with SiO 2 masks of variable mask-to-trench-width ratio. Dilute Al layers were periodically introduced during regrowth as markers of the growth interface. Correlated nanoscale mapping of doping, conductivity, and dopant complexes was achieved with atom probe tomography (APT), scanning spreading resistance microscopy (SSRM), and cathodoluminescence (CL) spectroscopy, respectively. The Al marker layers, detected by APT, enabled reconstruction of the faceted growth interface and correlation of the dopant concentration with position and time. The p-GaN growth rate is proportional to the mask-to-trench width ratio while the dopant incorporation rate is invariant. At trench edges, magnesium incorporation is suppressed, and oxygen incorporation enhanced, due to preferential incorporation on the semi-polar growth surface, leading to compensation and less abrupt p-n junctions; the SiO 2 mask is a source of oxygen. Residual etch damage below the regrowth interface induces n-type and p-type conductivity, creating leakage pathways. The non-uniform Mg incorporation is driven by crystal anisotropy and is thus inherent to non-planar regrowth, but can be mitigated by engineering the regrowth interface and process parameters. The unprecedented integration of spatially resolved mapping of dopants, impurities, conductivity, and carrier type is a powerful approach to discriminating distinct factors that limit the performance of regrown diodes, enabling the rational optimization of process and device design.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Hyperbolic enhancement of photocurrent patterns in minimally twisted bilayer graphene

Quasi-periodic moiré patterns and their effect on electronic properties of twisted bilayer graphene have been intensely studied. At small twist angle θ, due to atomic reconstruction, the moiré superlattice morphs into a network of narrow domain walls separating micron-scale AB and BA stacking regions. We use scanning probe photocurrent imaging to resolve nanoscale variations of the Seebeck coefficient occurring at these domain walls. The observed features become enhanced in a range of mid-infrared frequencies where the hexagonal boron nitride substrate is optically hyperbolic. Our results illustrate the capabilities of the nano-photocurrent technique for probing nanoscale electronic inhomogeneities in two-dimensional materials.

42 ENGINEERING↗
DOE OSTI2023

Encoding multistate charge order and chirality in endotaxial heterostructures

Abstract High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1 T -TaS 2 due to charge density wave (CDW) phase transitions. However, the metastability responsible for this behavior makes the presence of multistate switching unpredictable in TaS 2 devices. Here, we demonstrate the fabrication of nanothick verti-lateral H -TaS 2 /1 T -TaS 2 heterostructures in which the number of endotaxial metallic H -TaS 2 monolayers dictates the number of resistance transitions in 1 T -TaS 2 lamellae near room temperature. Further, we also observe optically active heterochirality in the CDW superlattice structure, which is modulated in concert with the resistivity steps, and we show how strain engineering can be used to nucleate these polytype conversions. This work positions the principle of endotaxial heterostructures as a promising conceptual framework for reliable, non-volatile, and multi-level switching of structure, chirality, and resistance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Highly stretchable polymer semiconductor thin films with multi-modal energy dissipation and high relative stretchability

Abstract Stretchable polymer semiconductors (PSCs) have seen great advancements alongside the development of soft electronics. But it remains a challenge to simultaneously achieve high charge carrier mobility and stretchability. Herein, we report the finding that stretchable PSC thin films (<100-nm-thick) with high stretchability tend to exhibit multi-modal energy dissipation mechanisms and have a large relative stretchability ( rS ) defined by the ratio of the entropic energy dissipation to the enthalpic energy dissipation under strain. They effectively recovered the original molecular ordering, as well as electrical performance, after strain was released. The highest rS value with a model polymer (P4) exhibited an average charge carrier mobility of 0.2 cm 2 V −1 s −1 under 100% biaxial strain, while PSCs with low rS values showed irreversible morphology changes and rapid degradation of electrical performance under strain. These results suggest rS can be used as a parameter to compare the reliability and reversibility of stretchable PSC thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Strongly coupled edge states in a graphene quantum Hall interferometer

Electronic interferometers using the chiral, one-dimensional (1D) edge channels of the quantum Hall effect (QHE) can demonstrate a wealth of fundamental phenomena. The recent observation of phase jumps in a Fabry-Pérot (FP) interferometer revealed anyonic quasiparticle exchange statistics in the fractional QHE. When multiple integer edge channels are involved, FP interferometers have exhibited anomalous Aharonov-Bohm (AB) interference frequency doubling, suggesting putative pairing of electrons into 2e quasiparticles. Here, we use a highly tunable graphene-based QHE FP interferometer to observe the connection between interference phase jumps and AB frequency doubling, unveiling how strong repulsive interaction between edge channels leads to the apparent pairing phenomena. By tuning electron density in-situ from filling factor v < 2 to v > 7, we tune the interaction strength and observe periodic interference phase jumps leading to AB frequency doubling. Our observations demonstrate that the combination of repulsive interaction between the spin-split v = 2 edge channels and charge quantization is sufficient to explain the frequency doubling, through a near-perfect charge screening between the localized and extended edge channels. Our results show that interferometers are sensitive probes of microscopic interactions and enable future experiments studying correlated electrons in 1D channels using density-tunable graphene.

42 ENGINEERING↗
DOE OSTI2024

Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy

Spin-orbit torque is not only a useful probe to study manipulation of magnetic textures and magnetic states at the nanoscale but also it carries great potential for next-generation computing applications. Here we report the observation of rich spin-orbit torque switching phenomena such as field-free switching, multistate switching, memristor behavior and ratchet effect in a single shot, co-sputtered, rare earth-transition metal Gd x Co 100-x . Notably such effects have only been observed in antiferromagnet/ferromagnet bi-layer systems previously. We show that these effects can be traced to a large anistropic canting, that can be engineered into the Gd x Co 100-x system. Further, we show that the magnitude of these switching phenomena can be tuned by the canting angle and the in-plane external field. The complex spin-orbit torque switching observed in canted Gd x Co 100-x not only provides a platform for spintronics but also serves as a model system to study the underlying physics of complex magnetic textures and interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Evidence for equilibrium exciton condensation in monolayer WTe 2

We present evidence that the two-dimensional bulk of monolayer WTe2 contains electrons and holes bound by Coulomb attraction—excitons—that spontaneously form in thermal equilibrium. On cooling from room temperature to 100 K, the conductivity develops a V-shaped dependence on electrostatic doping, while the chemical potential develops a step at the neutral point. These features are much sharper than is possible in an independent-electron picture, but they can be accounted for if electrons and holes interact strongly and are paired in equilibrium. Our calculations from first principles show that the exciton binding energy is larger than 100 meV and the radius as small as 4 nm, explaining their formation at high temperature and doping levels. Below 100 K, more strongly insulating behaviour is seen, suggesting that a charge-ordered state forms. The observed absence of charge density waves in this state is surprising within an excitonic insulator picture, but we show that it can be explained by the symmetries of the exciton wavefunction. Therefore, in addition to being a topological insulator, monolayer WTe2 exhibits strong correlations over a wide temperature range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Tunable correlated Chern insulator and ferromagnetism in a moiré superlattice

Studies of two-dimensional electron systems in a strong magnetic field revealed the quantum Hall effect, a topological state of matter featuring a finite Chern number C and chiral edge states. Haldane later theorized that Chern insulators with integer quantum Hall effects could appear in lattice models with complex hopping parameters even at zero magnetic field. The ABC-trilayer graphene/hexagonal boron nitride (ABC-TLG/hBN) moiré superlattice provides an attractive platform with which to explore Chern insulators because it features nearly flat moiré minibands with a valley-dependent, electrically tunable Chern number. In this work, we report the experimental observation of a correlated Chern insulator in an ABC-TLG/hBN moiré superlattice. We show that reversing the direction of the applied vertical electric field switches the moiré minibands of ABC-TLG/hBN between zero and finite Chern numbers, as revealed by large changes in magneto-transport behaviour. For topological hole minibands tuned to have a finite Chern number, we focus on quarter filling, corresponding to one hole per moiré unit cell. The Hall resistance is well quantized at h/2e 2 (where h is Planck’s constant and e is the charge on the electron), which implies C = 2, for a magnetic field exceeding 0.4 tesla. The correlated Chern insulator is ferromagnetic, exhibiting substantial magnetic hysteresis and a large anomalous Hall signal at zero magnetic field. Finally, our discovery of a C = 2 Chern insulator at zero magnetic field should open up opportunities for discovering correlated topological states, possibly with topological excitations, in nearly flat and topologically nontrivial moiré minibands.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Charge Transport Characteristics of Molecular Electronic Junctions Studied by Transition Voltage Spectroscopy

The field of molecular electronics is prompted by tremendous opportunities for using a single-molecule and molecular monolayers as active components in integrated circuits. Until now, a wide range of molecular devices exhibiting characteristic functions, such as diodes, transistors, switches, and memory, have been demonstrated. However, a full understanding of the crucial factors that affect charge transport through molecular electronic junctions should yet be accomplished. Remarkably, recent advances in transition voltage spectroscopy (TVS) elucidate that it can provide key quantities for probing the transport characteristics of the junctions, including, for example, the position of the frontier molecular orbital energy relative to the electrode Fermi level and the strength of the molecule–electrode interactions. These parameters are known to be highly associated with charge transport behaviors in molecular systems and can then be used in the design of molecule-based devices with rationally tuned electronic properties. This article highlights the fundamental principle of TVS and then demonstrates its major applications to study the charge transport properties of molecular electronic junctions.

36 MATERIALS SCIENCE↗
NASA NTRS1985

New outlook on control of crystalline and chemical perfection during growth of silicon

Significant progress has been made in our understanding of the Czochralski crystal growth process with the realization that the incorporation of oxygen into silicon is directly related to the internal gettering capability of wafers during device fabrication. It was also recognized that the electronic properties exhibited by silicon during various stages of device fabrication were significantly affected by the thermal history of the silicon during the post-growth cool-down period. Turbulent melt convection, induced by unavoidable destabilizing thermal gradients, was found to interfere with homogeneous dopant (and oxygen) incorporation and to influence markedly the dynamics of nonequilibrium point defects in the solidified silicon matrix during the cool-down period. In view of the unavoidability of destabilizing thermal gradients in conventional crystal growth configurations, melt stabilization through the application of magnetic fields is generally considered a viable approach. Control of heat input to the melt through heat pipe systems, as used during growth of germanium, cannot be applied to industrial growth of silicon. Recent studies have shown that heat exchange systems located coaxially about a growing crystal can be used to stabilize and control not only heat transfer in the grown crystal, but also in the melt adjacent to the solidification interface.

Witt, A. F.↗
DOE OSTI2024

Power Module Precursors and Prognostics

This project focuses on finding and utilizing electrical properties (precursors) of power electronic devices and modules whose changes have strong correlations with different modes and levels of degradations in order to realize online and lightweight state of health evaluation and fault diagnosis. Results from this project will contribute to higher safety, reliability, and power density of power electronic components. The approaches mainly include reviewing academic literature and industry practices for state of the art precursor identification and extraction, accelerated life cycles (ALC) of various power modules to create different degradations in-house, and developing techniques for gate-driver-integratable precursor detection circuit. In FY24, the results includes two sets of definitively detected aging precursors (on-state resistance and gate threshold voltage) for two sets of power modules respectively, controlled accelerated lifetime cycling of multiple silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) modules, and the development and validation of a gate voltage detection system.

ADVANCED PROPULSION SYSTEMS↗