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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Production and testing of the powerboard for ATLAS ITk Strip barrel modules

The upgrade of the ATLAS ITk strips detector for HL-LHC will employ a custom PCB (powerboard) for on-module DC-DC conversion, HV switching, and monitoring. Production of about 14100 of such PCBs with high reliability is a big challenge. In this paper we will present the production procedure and quality control (QC) testing system for the powerboards to be installed on ITk Strip barrel modules. During production, about 150 powerboards will be produced every week. Each powerboard will need to pass QC tests before they are assembled to module. The QC tests include thermal cycling between -35 °C and 40 °C, soak test (continuous running of DC-DC converter at high load at 20 °C), and basic functionality and characterization electrical tests of the low voltage (LV), high voltage (HV), and monitoring functions of the powerboard. A custom QC test system is described, which is based on a reusable PCB (active board) with all testing circuits, a one-time powerboard carrier card, and a Z-turn SoC board which hosts and runs the testing program. The production procedure and QC test system has been tested with 400 powerboards during pre-production, and the system has been proven ready for production with the desired testing program, speed, safety, and cost. Performance and typical failures of powerboards observed during the QC test of pre-production powerboards is also presented.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

On negative induced polarization in frequency domain measurements

SUMMARY Induced polarization (IP) has been widely used to non-invasively characterize electrical conduction and polarization in the subsurface resulting from an applied electric field. Earth materials exhibit a lossy capacitance defined by a negative intrinsic phase in frequency-domain IP (FDIP) or a positive intrinsic chargeability in time-domain IP (TDIP). However, error-free positive apparent phase or negative apparent chargeability (i.e. negative IP effects) can occur in IP measurements over heterogeneous media. While negative IP effects in TDIP data sets have been discussed, no studies have addressed this topic in detail for FDIP measurements. We describe theory and numerical modelling to explain the origin of negative IP effects in FDIP measurements. A positive apparent phase may occur when a relatively high polarizability feature falls into negative sensitivity zones of complex resistivity measurements. The polarity of the apparent phase is determined by the distribution of subsurface intrinsic phase and resistivity, with the resistivity impacting the apparent phase polarity via its control on the sensitivity distribution. A physical explanation for the occurrence of positive apparent phase data is provided by an electric circuit model representing a four-electrode measurement. We also show that the apparent phase polarity will be frequency dependent when resistivity changes significantly with frequency (i.e. in the presence of significant IP effects). Consequently, negative IP effects manifest themselves in the shape of apparent phase spectra recorded with multifrequency (spectral IP) data sets. Our results imply that positive apparent phase measurements should be anticipated and should be retained during inversion and interpretation of single frequency and spectral IP data sets.

Geochemistry & Geophysics↗
DOE OSTI2024

Fluxbranes, generalized symmetries, and Verlinde’s metastable monopole

The stringy realization of generalized symmetry operators involves wrapping “branes at infinity”. We argue that in the case of continuous (as opposed to discrete) symmetries, the appropriate objects are fluxbranes. We use this perspective to revisit the phase structure of Verlinde’s monopole, a proposed particle satisfies the Bogomol’nyi-Prasad-Sommerfield (BPS) condition when gravity is decoupled, but is non-BPS and metastable when gravity is switched on. Geometrically, this monopole is obtained from branes wrapped on locally stable but globally trivial cycles of a compactification geometry. The fluxbrane picture allows us to characterize electric (respectively magnetic) confinement (respectively screening) in the 4D theory as a result of monopole decay. In the presence of the fluxbrane, this decay also creates lower-dimensional fluxbranes, which in the field theory is interpreted as the creation of an additional topological field theory sector. Published by the American Physical Society 2024

Astronomy & Astrophysics↗
DOE OSTI2025

High-Intensity UV Exposure for the Rapid Screening of Silicon Photovoltaic Architectures

Advanced Si photovoltaic architectures incorporate different materials and processing pathways that influence degradation modes. Ultraviolet-induced degradation (UVID) is an understudied degradation mode for advanced cell architectures and is of increasing concern to industry due to growing adoption of UV-transparent encapsulation and bifacial technologies. In order to adopt new and evolving technologies confidently, novel component materials and processing techniques must be evaluated and designed for long-term stability, in addition to the conventional design focus on efficiency. In this work, a study protocol framework is presented for the rapid screening of unencapsulated devices against UVID. Unencapsulated passivated emitter rear contact (PERC) and tunnel oxide passivated contact (TOPCon) devices were aged under different UV irradiance intensities and measured via conventional nondestructive electrical characterization methods to assess performance degradation. Based on the results, protocol efficacy and recommendations for further study are discussed. As a result, this work is part of a broader effort to develop rapid screening processes that cut across architectures and exposure conditions to aid module manufacturers in vetting new materials choices for long-term stability.

Accelerated exposure↗
DOE OSTI2021

Sonic Lift-off of GaAs-based Solar Cells with Reduced Surface Facets

Spalling has been proposed as a promising kerfless technique for slicing thin wafers and devices, enhancing the wafer yield from an ingot by reducing kerf-losses and enabling substrate reuse for the case of costly devices. The main challenge of spalling is to control the roughness and thickness variation of the spalled wafers that can be as high as 100% of the wafer thickness. Here, we have shown previously that the thickness variations are largely influenced by the interaction of the crack front with its own reflected waves. Herein we show that through Sonic Lift-off we can offer a modification to standard spalling technologies that minimizes the interaction of reflected waves with the crack front during lift-off of GaAs(100)-based solar cells. We show that the average surface facets amplitude can be reduced by 96% while obtaining a high quality bulk with no discernible residual strain as measured by PL. The resulting spalling depth can easily be tuned from 100 µm to less than 15µm. The electrical characterization of the Sonic lift-off cell shows no degradation of the VOC and a power conversion within 99% relative of a non-spalled baseline.

42 ENGINEERING↗
DOE OSTI2021

Low-Cost Handle Study for Photovoltaics on Transfer Printed Virtual Substrates

This work expands upon previous research related to transfer printed virtual substrates: a technique for generating low-cost engineered substrates that is not based on wafer reuse. Here, silicon and sapphire are evaluated as candidate low-cost handle materials, validated by metal organic chemical vapor deposition regrowth of GaAs single-junction solar cells. Resulting devices are studied via materials and electrical characterization techniques, including concentration measurements that indicate GaAs//sapphire TPVS open-circuit voltage at >10 suns comparable with identical devices grown on a prime GaAs substrate.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

Atomic-Scale Imaging of Polarization Switching in an (Anti-)Ferroelectric Memory Material: Zirconia (ZrO2)

Direct, atomic-scale visualization of polarization switching in a functional, polycrystalline, binary oxide via in-situ high-resolution transmission electron microscopy (HRTEM) biasing is reported for the first time. Antiferroelectric (AFE) ZrO2 was used as the model system, which is important for commercial DRAMs and as emerging NVMs (through work-function engineering). We observed (1) clear shifting and coalescing of domains within a single grain, and (2) dramatic changes of the atomic arrangements and crystalline phases—both at voltages above the critical voltage measured for AFE switching. Similar synergistic in-situ structural-electrical characterization can pave the way to understand and engineer microscopic mechanisms for retention, fatigue, variability, sub-coercive switching and analog states in ferroelectric and AFE-based memory devices.

Lombardo, Sarah↗
DOE OSTI2022

Harvesting Wave Energy to Power Acoustic Transmitters Using Triboelectric Nanogenerator

Wave energy has the largest reserves and widest distribution among blue energy sources. However, the conversion and utilization of ocean wave energy are challenging. In this work, we developed a contact-separation mode triboelectric nanogenerator (TENG) with a simple structure for harvesting wave energy and powering marine sensors and transmitters and performed detailed electrical characterization under controlled laboratory conditions. A prototype power management circuit (PMC) was implemented to improve the output performance of the TENG. The output from the PMC could charge up a storage capacitor for powering sensors and electronics. Eventually, the TENG was integrated within a water-proof enclosure and tested using a custom-built wave simulator to evaluate the device performance in a more representative scenario. The device sustainably powered up an array of 27 LEDs and was able to charge up a capacitor up to 1.8 V for driving an acoustic transmitter. The results demonstrate that TENG technology shows great promise in harvesting low-frequency ocean wave energy.

Yang, Yang↗
DOE OSTI2023

Harmonic Signals Dataset

The Harmonic Signals Dataset (HSD) consists of one-dimensional time series data collected from current sensors with a goal of providing data for research and development of Non-Intrusive Load Monitoring (NILM) with high sample rate (800kHz) sensors. NILM seeks to detect and characterize electrical equipment operating within a facility by sensing changes in electrical current on the building power system associated with the equipment. To provide data with a known ground truth, but with the realism of a signal introduced within a building facility, a series of known ground truth signals were injected as voltage into the power system of a building and measurements of the signals at multiple locations across the building power system were made with electrical current sensors.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

2 kV Al 0.64 Ga 0.36 N-channel high electron mobility transistors with passivation and field plates

Abstract High voltage (∼2 kV) Al 0.64 Ga 0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm 2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si 3 N 4 surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress.

Alam, Md Tahmidul (ORCID:000900086556839X)↗
DOE OSTI2025

Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.

High Energy Physics↗
DOE OSTI2021

Shielded and Low-Damping SPM Probes For Quantitative Electrical and Electrochemical Characterization (Phase IIB)

The purpose of this DOE SBIR award was to develop new scanning probe microscopy tools for the elucidation of electrical and electrochemical properties at the nanoscale. High performance probes are important for energy materials research. In both solar cells and batteries, the essential physics and chemistry occur at the nanoscale and nanoscale characterization tools are required for their elucidation. The introduced new models are a shielded probe and an electrically insulated probe where only less than one micron of a conductive tip is exposed. In Phases I and IIa, we explored the development of cost-effective methods to insulate cantilevers from aqueous solutions and patented a technology that provides an insulated electrical contact to the tip. Also, our technology was adapted to be compatible with all popular commercial AFM systems. In Phase IIb, we improved reproducibility and batch size to drive down costs while maintaining quality control with testing. We transformed our product into a convenient turnkey solution to make electrochemical characterization approachable to a wide range of researchers. In January 2021, the technology was well received by the AFM community and Nanosurf Inc. (Woburn, MA) acquired Scuba Probe Technologies. The technology and expertise of Scuba Probe Technologies complements Nanosurf’s development of the full range of nano-electrical characterization tools.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Laboratory and Field Characterization of the Electrical Response of Modules Containing Configurable Current Cells (C3) Under Non-Optimal Conditions Such as Shading (Final Report)

This work is to be conducted in support of the American Made Challenges Solar Prize. The intent is to connect competitor teams with national laboratories that can help accelerate the development of innovative solutions and products. Teams who have won the Set! and Go! Contests are eligible to utilize vouchers at national laboratories to advance their ideas. Laboratory and field characterization of the electrical response of modules containing Configurable Current Cells (C3) under non-optimal conditions such as shading.

14 SOLAR ENERGY↗
DOE OSTI2021

Shielded and Low-Damping SPM Probes for Quantitative Electrical and Electrochemical Characterization (Phase IIA)

The purpose of this DOE SBIR award was to develop new scanning probe microscopy tools for the elucidation of electrical and electrochemical properties at the nanoscale. High performance probes are important for energy materials research. In both solar cells and batteries, the essential physics and chemistry occur at the nanoscale and nanoscale characterization tools are required for their elucidation. Two products were developed: an electrically shielded probe and an electrically conductive probe with low leakage currents. Our processes were based on post processing of existing probes and fabrication methods were tested, leading to a laser micromachining based approach that led to the first minimal viable product. We invented a method to make a reliable electrical contact that attaches a flexible printed circuit board to the chip. enable leak-free operation crucial when used in conductive liquids and electrolytes. This proprietary solution improves chip handling, reduces contamination, and maintains effective electrical contact. The probes fabricated in this Phase IIa are a minimal viable product which attracted attention from various tip manufacturers and instrument manufacturers alike.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electrical and structural characterization of in situ MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs

This study investigates the electrical and structural properties of metal–oxide–semiconductor capacitors (MOSCAPs) with in situ metal-organic chemical vapor deposition-grown Al2O3 dielectrics deposited at varying temperatures on (010) β-Ga2O3 and β-(AlxGa1−x)2O3 films with different Al compositions. The Al2O3/β-Ga2O3 MOSCAPs exhibited a strong dependence of electrical properties on Al2O3 deposition temperature. At 900 °C, reduced voltage hysteresis (∼0.3 V) with improved reverse breakdown voltage (74.5 V) was observed, corresponding to breakdown fields of 5.01 MV/cm in Al2O3 and 4.11 MV/cm in β-Ga2O3 under reverse bias. In contrast, 650 °C deposition temperature resulted in higher voltage hysteresis (∼3.44 V) and lower reverse breakdown voltage (38.8 V) with breakdown fields of 3.69 and 2.87 MV/cm in Al2O3 and β-Ga2O3, respectively, but exhibited impressive forward breakdown field, increasing from 5.62 MV/cm at 900 °C to 7.25 MV/cm at 650 °C. High-resolution scanning transmission electron microscopy (STEM) revealed improved crystallinity and sharper interfaces at 900 °C, contributing to enhanced reverse breakdown performance. For Al2O3/β-(AlxGa1−x)2O3 MOSCAPs, increasing Al composition (x) from 5.5% to 9.2% reduced net carrier concentration and improved reverse breakdown field contributions from 2.55 to 2.90 MV/cm in β-(AlxGa1−x)2O3 and 2.41 to 3.13 MV/cm in Al2O3. The electric field in Al2O3 dielectric under forward bias breakdown also improved from 5.0 to 5.4 MV/cm as Al composition increased from 5.5% to 9.2%. The STEM imaging confirmed the compositional homogeneity and excellent stoichiometry of both Al2O3 and β-(AlxGa1−x)2O3 layers. These findings demonstrate the robust electrical performance, high breakdown fields, and excellent structural quality of Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs, highlighting their potential for high-power electronic applications.

Bhuiyan, A. F. M. Anhar Uddin (ORCID:0000000334212↗
DOE OSTI2021

Electrical and optical characterizations of spin-orbit torque

To further reduce the energy consumption in spin–orbit torque devices, it is crucial to precisely quantify the spin–orbit torque (SOT) in different materials and structures. In this work, heavy metal/ferromagnet and heavy metal/ferrimagnet heterostructures are employed as the model systems to compare the electrical and optical methods for the SOT characterization, which are based on the anomalous Hall effect and the magneto-optical Kerr effect, respectively. It is found that both methods yield the consistent SOT strength for the current-driven magnetization switching measurements and the harmonic measurements. Our results suggest that the optical method is a feasible and reliable tool to investigate SOT, which is a powerful way to develop insulator-based magnetic systems in the future.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Electrical and structural characterization of nano-carbon–aluminum composites fabricated by electro-charging-assisted process

Incorporating nano-carbon phases into metal-matrix composites is a promising strategy for simultaneously enhancing electrical conductivity and mechanical properties of metals. Here, we describe the manufacture of novel nano-carbonaluminum composites by an electro-charge-assisted process (EAP) that show 5.6% ± 1.7% increase in electrical conductivity compared to the base metal alloy. The source of nano-carbon that we used in this study is activated carbon with particle size less than 100 nm. The enhancement is attributed to nano-graphitic structures that extend through the lattice of the metal. Through electron transfer from the metal to the nanostructures the electron density at the interface of nano-crystalline graphite and the metal lattice increases thereby enhancing the bulk electrical conductivity. We identify the important fabrication parameters of the EAP for a reaction system employing a tapered graphite cathode. Here, a high current density of 100 A/cm 2 causes ionization and crystallization of the carbon in the liquid metal. The increase in electrical conductivity of the composite are directly related to the incorporation of the nanocrystalline carbon in the metal lattice. The superior performance of these nano-carbon aluminum composites makes them promising candidates for power transmission lines and other applications.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Ion-beam assisted sputtering of titanium nitride thin films

Abstract Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. This work aims to explore effects in ion beam-assisted sputtering (IBAS), were an observed increase in nominal critical temperature and upper critical fields are in tandem with previous work on Niobium nitride (NbN). We grow thin films of titanium nitride by both, the conventional method of DC reactive magnetron sputtering and the IBAS method, to compare their superconducting critical temperatures $$T_{c}$$ T c as functions of thickness, sheet resistance, and nitrogen flow rate. We perform electrical and structural characterizations by electric transport and x-ray diffraction measurements. Compared to the conventional method of reactive sputtering, the IBAS technique has demonstrated a 10% increase in nominal critical temperature without noticeable variation in the lattice structure. Additionally, we explore the behavior of superconducting $$T_c$$ T c in ultra-thin films. Trends in films grown at high nitrogen concentrations follow predictions of mean-field theory in disordered films and show suppression of superconducting $$T_c$$ T c due to geometric effects, while nitride films grown at low nitrogen concentrations strongly deviate from the theoretical models.

36 MATERIALS SCIENCE↗