Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “dislocation density”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Stress studies in EFG

Stress distributions were calculated for a creep law to predict a rate of plastic deformation. The expected reduction in stresses is obtained. Improved schemes for calculating growth system temperature distributions were evaluated. Temperature field modeling examined the possibility of using horizontal temperature gradients to influence stress distribution in ribbon. The defect structure of 10 cm wide ribbon grown in the cartridge system was examined. A new feature is identified from an examination of cross sectional micrographs. It consists of high density dislocation bands extending through the ribbon thickness. A four point bending apparatus was constructed for high temperature study of the creep response of silicon, to be used to generate defects for comparison with as grown defects in ribbon. The feasibility of laser interferometric techniques for sheet residual stress distribution measurement is examined. The mathematical formalism for calculating residual stress from changes in surface topology caused by an applied stress in a rectangular specimen was developed, and the system for laser interferometric measurement to obtain surface topology data was tested on CZ silicon.

Source record↗
NASA NTRS1985

Stress and efficiency studies

Optical and electrical characterization of defects has been started in EFG ribbon grown in a system that will be used to test the stress model. Temperature and stress field modeling aimed at defining low stress growth configuration is also in progress, and results will be used to guide development of the experimental system. The baseline defect configuration for ribbon grown at speeds of approx. 1 cm/min consists of dislocation densities of the order of 10 to the 5th power to 10 to the 6th power/sq cm, as well as saucer type etch pits and line defects. All these defects are inhomogeneously distributed. EBIC measurements indicate that diffusion lengths are in the range 20 to 60 microns, and significant spatial inhomogeneities occur through the ribbon thickness. Growth speed changes in the range 0.7-1.0 cm/min do not produce significant variations in ribbon defect configurations.

Source record↗
NASA NTRS1985

On the use of internal state variables in thermoviscoplastic constitutive equations

The general theory of internal state variables are reviewed to apply it to inelastic metals in use in high temperature environments. In this process, certain constraints and clarifications will be made regarding internal state variables. It is shown that the Helmholtz free energy can be utilized to construct constitutive equations which are appropriate for metallic superalloys. Internal state variables are shown to represent locally averaged measures of dislocation arrangement, dislocation density, and intergranular fracture. The internal state variable model is demonstrated to be a suitable framework for comparison of several currently proposed models for metals and can therefore be used to exhibit history dependence, nonlinearity, and rate as well as temperature sensitivity.

Allen, D. H.↗
NASA NTRS1983

Creep fatigue life prediction for engine hot section materials (isotropic)

The activities performed during the first year of the NASA HOST Program, Creep Fatigue Life Prediction for Engine Hot Section Materials (Isotropic), being conducted by Pratt & Whitney Aircraft are summarized. The program is a 5 year, two part effort aimed at improving the high temperature crack initiation prediction technology for gas turbine hot section components. Significant results of the program produced thus far are discussed. Cast B1900 + Hf and wrought IN 718 were selected as the base and alternate materials, respectively. A single heat of B1900 + Hf was obtained and test specimens fabricated. The material was characterized with respect to grain size, gamma prime size, carbide distribution, and dislocation density. Monotonic tensile and creep testing has shown engineering properties within anticipated scatter for this material. Examination of the tensile tests has shown a transition from inhomogeneous planar slip within the grains at lower temperatures to more homogeneous matrix deformation. Examination of the creep tests has shown a transgranular failure mode at 1400 F and an intergranular failure mode at 1600 F and 1800 F.

Moreno, V.↗
NASA NTRS1985

Analysis of silicon stress/strain relationships

In the study of stress-strain relationships in silicon ribbon, numerous solutions were calculated for stresses, strain rates, and dislocation densities through the use of the Sumino model. It was concluded that many cases of failure of computer solutions to converge are analytical manifestations of shear bands (Luder's band) observed in experiments.

Dillon, O.↗
NASA NTRS1986

Process-induced defects in solar cell silicon

The microstructure of as-grown and processed, edge-defined film-fed grown, silicon ribbons was studied in order to identify the basic mechanisms responsible for the change of the as-grown defect structure during processing at elevated temperatures. The short heat treatment required to diffuse the p-n junction was sufficient to cause heterogeneous precipitation of impurity atoms, particularly transition metals. In addition, an elastic recovery of the ribbon occurred by dislocation glide, resulting in the formation of a polygonizationlike structure of subboundaries in the base. Mechanisms are suggested by which twin boundaries, acting as dislocation obstacles, can concentrate the relatively low average dislocation densities typical of edge-defined film-fed grown ribbons (10 to the 4th to 10 to the 8th/sq cm) to values which are sufficient to induce the formation of subgrainlike boundary structures.

Gleichmann, R.↗
NASA NTRS1985

Damping and modulus measurements in B2 transition metal aluminides

The polycrystalline intermetallic alloys FeAl (50.9 to 58.2 percent Fe), NiAl (49.2 to 55.9 percent Ni) and CoAl (48.5 to 52.3 percent Co) have the B2 structure and are of interest for high temperature applications. The PUCOT (piezoelectric ultrasonic composite oscillator technique) has been used to measure mechanical damping or internal friction and Young's modulus has been used as a function of temperature and composition for these materials. The modulus data for six CoAl alloys at temperatures up to 1300 K are presented. Examples are given of the strain amplitude dependence of internal friction for four CoAl alloys. The curves showed the break away phenomenon and are interpreted in terms of a theory dealing with the pinning of dislocation lines and their eventual break away at large strain amplitudes. The dislocation density was calculated to be about 10 to the 8th per sq m. For all the compositions (X1) of CoAl studied, a single equation could be fitted to the data.

Harmouche, M. R.↗
NASA NTRS1986

Ultrasonic determination of recrystallization

Ultrasonic attenuation was measured for cold worked Nickel 200 samples annealed at increasing temperatures. Localized dislocation density variations, crystalline order and colume percent of recrystallized phase were determined over the anneal temperature range using transmission electron microscopy, X-ray diffraction, and metallurgy. The exponent of the frequency dependence of the attenuation was found to be a key variable relating ultrasonic attenuation to the thermal kinetics of the recrystallization process. Identification of this key variable allows for the ultrasonic determination of onset, degree, and completion of recrystallization.

Generazio, E. R.↗
NASA NTRS1986

Stress and efficiency studies in EFG

The goals of this program were: (1) to define minimum stress configurations for silicon sheet growth at high speeds; (2) to quantify dislocation electrical activity and their limits on minority carrier diffusion length in deformed silicon; and (3) to study reasons for degradation of lifetime with increases in doping level in edge-defined film-fed growth (EFG) materials. A finite element model was developed for calculating residual stress with plastic deformation. A finite element model was verified for EFG control variable relationships to temperature field of the sheet to permit prediction of profiles and stresses encountered in EFG systems. A residual stress measurement technique was developed for finite size EFG material blanks using shadow Moire interferometry. Transient creep response of silicon was investigated in the temperature range between 800 and 1400 C in strain and strain regimes of interest in stress analysis of sheet growth. Quantitative relationships were established between minority carrier diffusion length and dislocation densities using Electron Beam Induced Current (EBIC) measurement in FZ silicon deformed in four point bending tests.

Source record↗
NASA NTRS1987

Effect of hydrogen on deformation structure and properties of CMSX-2 nickel-base single-crystal superalloy

Material used in this study was a heat of the alloy CMSX-2. This nickel-based superalloy was provided in the form of oriented single crystals, solutionized for 3 hrs at 1315 C. It was then usually heat treated as follows: 1050 C/16h/air cool + 850 C/48h/air cool. The resulting microstructure is dominated by cuboidal, ordered gamma precipitates with a volume fraction of about 75% and an average size of 0.5 microns. In brief, the most compelling hydrogen induced-changes in deformation structure are: (1) enhanced dislocation accumulation in the gamma matrix; and (2) more extensive cross-slip of superdislocations in the gamma precipitates. The enhanced dislocation density in gamma acts to decrease the mean free path of a superdislocation, while easier cross slip hinders superdislocation movement by providing pinning points in the form of sessile jobs. Both processes contribute to the increase of flow stress and the notable work hardening that occurs prior to fracture.

Dollar, M.↗
NASA NTRS1985

Structural defect characterization of silicon dendritic web ribbons

An EBIC study of the cross section of silicon dendritic web ribbon has revealed that recombination-active structural defects are mainly concentrated in the inner part of the ribbon, particularly at and near the twin plane, whereas the material near the surface has significantly fewer defects. An analysis of the distribution of etch pits due to slip dislocations created by shear stress indicates that a minimum in the dislocation density is frequently observed in the ribbon adjacent to the dendrite.

Cheng, L. J.↗
NASA NTRS1986

Compliance matrices for cracked bodies

An algorithm is developed to construct the compliance matrix for a cracked solid in the integral-equation formulation of two-dimensional linear-elastic fracture mechanics. The integral equation is reduced to a system of algebraic equations for unknown values of the dislocation-density function at discrete points on the interval from -1 to 1, using the numerical procedure described by Gerasoulis (1982). Sample numerical results are presented, and it is suggested that the algorithm is especially useful in cases where iterative solutions are required; e.g., models of fiber-reinforced concrete, rocks, or ceramics where microcracking, fiber bridging, and other nonlinear effects are treated as nonlinear springs along the crack surfaces (Ballarini et al., 1984).

Ballarini, R.↗
NASA NTRS1987

Thermal viscoplastic buckling during the growth of silicon ribbon

This paper is an analysis of the conditions to be satisfied in order to avoid buckling during the growth of a silicon ribbon that is being slowly pulled from the melt. A viscoplastic constitutive equation with a dislocation density effect is used to model the material behavior. The critical thicknesses and the corresponding deflection shapes are calculated by the finite element method for the cantilever boundary conditions. The value of the parameter which controls the speed of the lateral deflection is computed by using Galerkin's method. It is demonstrated that, due to the effect of viscoplasticity, some deflection shapes increase in magnitude with time and other shapes damp out.

Tsai, C. T.↗
NASA NTRS1987

Dislocation dynamics and the viscoplastic buckling of dendritic web type silicon ribbon

The effect of dendrites (reinforced edges) on the residual stresses, dislocation densities and buckling behavior during growth of web type silicon ribbon is studied. A viscoplastic material response function (Haasen-Sumino model) is used to calculate the stresses and the disloction density at each point in the silicon ribbon. In addition, the role of dendrites on the viscoplastic buckling behavior of the ribbon is investigated. The critical thicknesses, the corresponding deflection shapes and lateral deflection speeds are calculated. These results are then compared with similar data obtained for flat plates.

Tsai, C. T.↗
NASA NTRS1987

Characteristics of GaAs with inverted thermal conversion

GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).

Kang, C. H.↗
NASA NTRS1988

Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

Migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si) are reported. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy and scanning surface electron microscopy of MEMBE-grown GaAs/Si showed dislocation densities of 10 to the 7th/sq cm. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.

Kim, Jae-Hoon↗
NASA NTRS1988

Ultrasonic attenuation measurements determine onset, degree, and completion of recrystallization

Ultrasonic attenuation was measured for cold worked Nickel 200 samples annealed at increasing temperatures. Localized dislocation density variations, crystalline order and volume percent of recrystallized phase were determined over the anneal temperature range using transmission electron microscopy, X-ray diffraction, and metallurgy. The exponent of the frequency dependence of the attenuation was found to be a key variable relating ultrasonic attenuation to the thermal kinetics of the recrystallization process. Identification of this key variable allows for the ultrasonic determination of onset, degree, and completion of recrystallization.

Generazio, E. R.↗
NASA NTRS1989

TEM studies of oxidized NiAl and Ni3Al cross sections

Cross sections of oxide scale/(Ni-Al) intermetallics were prepared by a new method and studied using primarily TEM. The cross sections were prepared by encasing an oxidized metal specimen sandwich in a low-melting-temperature zinc alloy. Observations of oxidized zirconium-doped beta-NiAl cross sections revealed crystallographic voids beneath an adherent Al2O3 scale. The oxide-metal interface was incoherent, but a high dislocation density in the metal near the interface suggested that a large tensile stress was induced by the attached oxide scale. A duplex Al2O3-NiAl2O4 scale formed on zirconium-doped and zirconium/boron-doped gamma-prime-Ni3Al alloys. Additional results are presented involving oxidation mechanisms and oxide-metal interface structures.

Doychak, J.↗