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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation

Here, in this work, the optical efficiency of III-nitride blue micro-LEDs (μLEDs) ranged from 5 × 5 to 60 × 60 μm 2 with different sidewall treatments at low current density range was investigated. The results showed dielectric sidewall passivation using atomic layer deposition (ALD) has superior optical enhancement compared to conventional RF sputtering, where most of the enhancement occurred at low current density range. Additionally, the use of ALD sidewall passivation and chemical treatment offered significant efficiency improvement for different sizes of μLEDs at operating less than 1 A cm −2 and the devices without sidewall treatments did not emit light. The effect of sidewall treatments to the effective Shockley–Read–Hall (SRH) nonradiative recombination coefficient, or the effective A coefficient from the ABC model, was estimated. The effective SRH nonradiative recombination coefficient was suppressed by two orders of magnitude for devices with sidewall treatments compared to devices without sidewall passivation.

Wong, Matthew S.↗
NASA NTRS1977

JAN transistor and diode characterization test program, JANTX diode 1N649-1

The data processing and calculation of statistical parameters was performed by the Tektronix computer system. The data acquired for easy vendor to vendor and date code to date code analysis are summarized. Each parameter is presented with test conditions, mean, standard deviation, lowest reading, 10% point (where 10% of all readings are equal to or less than the indicated reading), 90% point (where 90% of all readings are equal to or less than the indicated reading) and the highest reading.

Takeda, H.↗
NASA NTRS1977

JAN transistor and diode characterization test program: JANTX diode 1N759A

The necessary data to create a new class of specifications was the objective of this characterization program. Sample selection was made according to the following criteria: (1) manufacturer or qualified distributor; (2) two vendors; and (3) two date codes. The general guidelines for procurement were two QPL vendors, JAN or JANTX, and two manufacturing lots, 27 from each lot. All data were acquired with three digit accuracy. The data processing and calculation of statistical parameters were performed by the Tektronix computer system using 4 digit display.

Takeda, H.↗
NASA NTRS1982

Simple phenomenological modeling of transition-region capacitance of forward-biased p-n junction diodes and transistor diodes

The derivation of a simple expression for the capacitance C(V) associated with the transition region of a p-n junction under a forward bias is derived by phenomenological reasoning. The treatment of C(V) is based on the conventional Shockley equations, and simpler expressions for C(V) result that are in general accord with the previous analytical and numerical results. C(V) consists of two components resulting from changes in majority carrier concentration and from free hole and electron accumulation in the space-charge region. The space-charge region is conceived as the intrinsic region of an n-i-p structure for a space-charge region markedly wider than the extrinsic Debye lengths at its edges. This region is excited in the sense that the forward bias creates hole and electron densities orders of magnitude larger than those in equilibrium. The recent Shirts-Gordon (1979) modeling of the space-charge region using a dielectric response function is contrasted with the more conventional Schottky-Shockley modeling.

Lindholm, F. A.↗