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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

On the Ambiguity of Using Isc for Analyzing Suns-Voc Data on Modules

In standard silicon solar modules, cells are strung in series with bypass diodes incorporated to reduce the effects of shading. When all of the strings are partially shaded the measured short circuit current is affected and the Isc of the module will be equal to that of the lowest current cell in the least shadowed string. In bifacial modules the ability to assess losses due to shading is especially important. This paper advocates an alternative approach to converting the raw suns-voc data to pseudo IV data in modules where shading may be affecting the suns-voc curve results.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2024

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.

Herath Mudiyanselage, Dinusha (ORCID:0000000186119↗
DOE OSTI2024

Excessive charge, beam loading, and impedance collapse thresholds for a velvet emitter

Excess emission has been observed from velvet cathodes with total emission times >150 ns. In this diode experiment, we produce a sub-relativistic electron beam with the ability to consistently change γ from 1.2 to 1.5 and β = 0.5–0.75. Electron emission in this particular diode geometry requires electric fields >40 kV/cm. The current increases at steady rates >0.05 A/ns after the head of the pulse, indicating an expansion of the emission surface and reduction in the effective AK gap. Small transients of excess emission (or arcs) are consistently observed for current pulses exceeding 150 ns. The excess emission results in beam loaded levels ≥10 kV on the diode voltage. The effects described here are compounded as diode voltage is increased. The principal objective of these experiments is to quantify electric field emission thresholds, current ramps, excess emission delays, effective beam loading, and impedance collapse.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

High-performance nanodevices based on WGe 2⁢ N 4 monolayer

Two-dimensional (2D) 𝑀⁢𝐴 2 ⁢𝑍 4 -family monolayers (MLs) have emerged as promising semiconductors due to their element tunability and rich electronic and optoelectronic properties. In this work, using first-principles calculations, we investigate the electronic, mechanical, transport, and optoelectronic properties of WGe 2⁢ N 4 ML with a small indirect bandgap. Various nanodevices based on WGe 2 ⁢N 4 ML are studied, including pn-junction diodes, pin-junction field-effect transistors (FETs), and phototransistors. The present results reveal that the WGe 2⁢ N 4 ML exhibits high rigidity, thermal stability, and remarkable light absorption. These nanodevices demonstrate excellent performance: (1) the pn-junction diode shows a high rectification ratio and a near-Shockley-limit ideality factor, (2) the pin-junction FET exhibits significant gate voltage modulation capability with subthreshold swing as low as 71 mV/dec (close to the theoretical limit calculated based on the Boltzmann distribution), and (3) the phototransistor displays strong optoelectronic responses in the visible and ultraviolet regions. Furthermore, these findings establish WGe 2 ⁢N 4 ML as a versatile platform for developing high-performance, multifunctional nanoelectronic and optoelectronic devices, significantly expanding the application potential of 𝑀⁢𝐴 2⁢ 𝑍 4 -family materials.

2-dimensional systems↗
DOE OSTI2024

Thermal Management of Discretized Heaters Using CuW Microchannel Heat Sinks and FC3283

Single-phase cooling using microchannel heat sinks (MCHS) has become a popular approach for overcoming the thermal challenges associated with high-powered microelectronic devices. Thermal management is one of the largest barriers to higher power densities in electronics and frequently limits overall device performance. The implementation of forced convective cooling via single-phase liquid cooling in MCHS reduces the thermal resistance resulting in lower device temperatures at high-power conditions, which can decrease the package size and extend the lifespan of devices. The goal of the work described in this article was to investigate practical cooling solutions for laser diode bars. This study examined the effectiveness of a copper tungsten (CuW) microchannel heat sink paired with a dielectric coolant (FC3283) for dissipating both discrete and uniform heat fluxes up to 600 W/cm2 across a 0.25-cm2 surface area through a numerical and experimental study. CuW was chosen as the MCHS material because it is thermal expansion matched to GaAs, which is a common laser diode substrate. FC3283 serves as a dielectric coolant that is compatible with power electronics cooling. The microchannels utilized in this work were approximately $365$ $μ$ m deep and $100$ $μ$ m wide resulting in a hydraulic diameter of $160$ $μ$ m. The study investigated the cooling performance across a variety of applied power loads and flow rates to determine optimal effectiveness. The resulting thermal resistance ranged from 0.15 cm2 K/W at the highest flow rate to 0.26 cm2 K/W at the lowest flow rate. Further, the resulting thermal performance from this study demonstrates the importance of considering discrete heat sources separately from uniform heat sources and proved that the unique combination of CuW microchannels with FC3283 can be a promising cooling option toward future advancements of laser diode bars and other high-power microelectronics.

42 ENGINEERING↗
DOE OSTI2025

Multifrequency-resolved Hanbury Brown–Twiss effect

The Hanbury Brown–Twiss (HBT) effect holds a pivotal place in intensity interferometry and gave a seminal contribution to the development of quantum optics. To observe such an effect, both good spectral and timing resolutions are necessary. Most often, the HBT effect is observed for a single frequency at a time due to its limitations in dealing with multifrequencies simultaneously, halting and limiting some applications. Here, we report a fast and data-driven spectrometer built with a one-dimensional array of single-photon-sensitive avalanche diodes. We report observing the HBT effect for multiple frequencies at the same time. In particular, we observe the HBT effect for up to five lines of the Ne spectrum, but this can be improved upon to include more lines. Our work represents a major step in making spectral binning and multifrequency HBT more widely available. The technology we present can benefit both classical and quantum applications.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2022

Optics-Free Chip-Scale Intraoperative Imaging Using NIR-Excited Upconverting Nanoparticles

Here we present an optics-free CMOS image sensor that incorporates a novel time-gated dual-photodiode pixel design to allow filter- and lens-less image acquisition of near-infrared-excited (NIR-excited) upconverting nanoparticles. Recent biomedical advances have highlighted the benefits of NIR excitation, but NIR interaction with silicon has remained a challenge, even with high-performance optical blocking filters. Using a secondary diode and a dual-photodiode design, this sensor is able to remove the 100s of mV of NIR background on pixels and bring it down to single-digit mV level, nearing its noise floor of 2.2 mV rms, not achievable with any optical filter. Non-linear effects of background cancellation using the diode pair has been mitigated using an initial one-time pixel-level curve fitting and calibration in a post-processing setting. This imager comprises a highly linear 11 fF metal-oxide-metal (MOM) capacitor and includes integrated angle-selective gratings to reject oblique light and enhance sharpness. Each pixel also includes two distinct correlated double sampling schemes, to remove low frequency flicker noise and systematic offset in the datapath. We demonstrate the performance of this imager using pulsed NIR-excited upconverting nanoparticles on standard United-States-Air-Force (USAF) resolution targets and achieve an SNR of 15 dB, while keeping NIR background below 6 mV. This 36-by-80-pixel array measures only 2.3 mm by 4.8 mm and can be thinned down to 25 µm, allowing it to become surgically compatible with intraoperative instruments and equipment, while remaining optics-free.

42 ENGINEERING↗
DOE OSTI2022

Optimal interconnection of three-terminal tandem solar cells

Three-terminal (3T) tandem solar cells require an adapted module integration scheme in order to explore their full efficiency potential. The three terminals allow to extract the power of the top and bottom cell separately. In a cell string, the wide bandgap top cells are interconnected in parallel to multiple bottom cells resulting in a parallel/series interconnection. This interconnection scheme affects the operation of the subcells, the resulting current path between the subcells, the layout of the cell interconnects, and the system level. Here, we analyze by simulations and experiments the aspects of the module integration of series- and reverse-connected 3T cells with their practical impact on module processes and performance as well as the effect of varying voltage ratios on the string-end losses. If the subcells are connected in series, the module integration requires insulation layers and significantly longer interconnects compared to devices with reverse-connected subcells. Tandem devices with a reverse connection and a voltage ratio between top and bottom cell of 2:1 allow a lean interconnection design and low integration losses. Here, we present an approach for the integration of bypass diodes for the protection against shading effects that allow to minimize string-end and shading losses for a system of modules featuring 3T cells.

14 SOLAR ENERGY↗
DOE OSTI2022

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

Abstract To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy and optical profilometry, can be used to detect defects in the substrate and epitaxial layers. Raman spectroscopy was used to identify points of high crystal stress and non-uniform conductivity in a substrate, while optical profilometry was used to identify bumps and pits in a substrate which could cause catastrophic device failures. The effect of the defects was studied using vertical P-i-N diodes with a single zone junction termination extention (JTE) edge termination and isolation, which were formed via nitrogen implantation. Diodes were fabricated on and off of sample abnormalities to study their effects. From electrical measurements, it was discovered that the devices could consistently block voltages over 1000 V (near the theoretical value of the epitaxial layer design), and the forward bias behavior could consistently produce on-resistance below 2 mΩ cm 2 , which is an excellent value considering DC biasing was used and no substrate thinning was performed. It was found that high crystal stress increased the probability of device failure from 6 to 20%, while an inhomogeneous carrier concentration had little effect on reverse bias behavior, and slightly (~ 3%) increased the on-resistance (R on ). Optical profilometry was able to detect regions of high surface roughness, bumps, and pits; in which, the majority of the defects detected were benign. However a large bump in the termination region of the JTE or a deep pit can induce a low voltage catastrophic failure, and increased crystal stress detected by the Raman correlated to the optical profilometry with associated surface topography.

42 ENGINEERING↗
DOE OSTI2024

Grain engineering for efficient near-infrared perovskite light-emitting diodes

Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr -1 m -2 . These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications.

42 ENGINEERING↗
DOE OSTI2020

Foldable semi-ladder polymers: novel aggregation behavior and high-performance solution-processed organic light-emitting transistors

A critical issue in developing high-performance organic light-emitting transistors (OLETs) is to balance the trade-off between charge transport and light emission in a semiconducting material. Although traditional materials for organic light-emitting diodes (OLEDs) or organic field-effect transistors (OFETs) have shown modest performance in OLET devices, design strategies towards high-performance OLET materials and the crucial structure–performance relationship remain unclear. Our research effort in developing cross-conjugated weak acceptor-weak donor copolymers for luminescent properties lead us to an unintentional discovery that these copolymers form coiled foldamers with intramolecular H-aggregation, leading to their exceptional OLET properties. An impressive external quantum efficiency (EQE) of 6.9% in solution-processed multi-layer OLET devices was achieved.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor

Nitrogen-vacancy (N-V) centers in diamond work as a quantum electrometer. Using an ensemble state of N-V centers, we propose vector electrometry and demonstrate measurements in a diamond electronic device. A transverse electric field applied to the N-V axis under a high voltage is measured, while applying a transverse magnetic field. The response of the energy-level shift against the electric field is significantly enhanced compared with that against an axial magnetic field. Repeating the measurement of the transverse electric field for multiple N-V axes, our team obtains the components of the electric field generated in the device.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Transient Photocurrent From High-Voltage Vertical GaN Diodes Irradiated With Electrons: Experiments and Simulations

Radiation-hard high-voltage vertical GaN p-n diodes are being developed for use in power electronics subjected to ionizing radiation. Here, we present a comparison of the measured and simulated photocurrent response of diodes exposed to ionizing irradiation with 70 keV and 20 MeV electrons at dose rates in the range of 1.4x10 7 - 5.0x10 8 rad(GaN)/s. The simulations correctly predict the trend in measured steady-state photocurrent and agree with experimental results within a factor of 2. Furthermore, simulations of the transient photocurrent response to dose rates with uniform and non-uniform ionization depth profiles uncover the physical processes involved that cannot be otherwise experimentally observed due to orders of magnitude larger RC time constant of the test circuit. The simulations were performed using an Exploratory Physics Development code developed at Sandia National Laboratories. The code offers the capability to include defect physics under more general conditions, not included in commercially available software packages, extending the applicability of the simulations to different types of radiation environments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Soft-Switching Solid-State Transformer With Reduced Conduction Loss

Solid-state transformers (SSTs) are a promising solution photovoltaic (PV), wind, traction, data center, battery energy storage system (BESS), and fast charging electric vehicle (EV) applications. The traditional SSTs are typically three-stage, i.e., hard-switching cascaded multilevel rectifiers and inverters with dual active bridge (DAB) converters, which leads to bulky passives, low efficiency, and high electromagnetic interference (EMI). This article proposes a new soft-switching solid-state transformer (S4T). The S4T has full-range zero-voltage switching (ZVS), electrolytic capacitor-less dc link, and controlled dv/dt, which reduces EMI. The S4T comprises two reverse-blocking current-source inverter (CSI) bridges, auxiliary branches for ZVS, and transformer magnetizing inductor as a reduced dc link with 60% ripple. Compared with the prior S4T, an effective change on the leakage inductance diode is made to reduce the number of the devices on the main power path by 20% for significant conduction loss saving and retain the same functionality of damping the resonance between the leakage and resonant capacitors and recycling trapped leakage energy. The conduction loss saving is crucial, being the dominating loss mechanism in SSTs. Importantly, the proposed single-stage SST not only holds the potential for high power density and high efficiency but also has full functionality, e.g., multiport dc loads integration, voltage regulation, and reactive power compensation, unlike the traditional single-stage matrix SST. The S4T can achieve single-stage isolated bidirectional dc–dc, ac–dc, dc–ac, or ac–ac conversion. It can also be configured input-series output-parallel (ISOP) in a modular way for medium-voltage (MV) grids. Hence, the S4T is a promising candidate for the SST. The full functionality, e.g., voltage buck–boost, multiport, etc., and the universality of the S4T for the dc–dc, dc–ac, and ac–ac conversion are verified through the simulations and experiments of two-port and three-port MV prototypes based on 3.3 kV SiC MOSFETs in dc–dc, dc–ac, and ac–ac modes at 2 kV.

14 SOLAR ENERGY↗
DOE OSTI2022

Hybrid Organic Inorganic Perovskites: Physical Properties and Applications (in 4 Volumes)

This four-volume handbook gives a state-of-the-art overview of hybrid organic inorganic perovskites, both two dimensional (2D) and three dimensional (3D), from synthesis and characterization and simulation to optoelectronic devices (such as solar cells and light emitting diodes), spintronics devices and catalysis application. The editors, coming from academia and national laboratory, are known for their didactic skills as well as their technical expertise. Coordinating the efforts of 30 expert authors in 21 chapters, they construct the story of hybrid perovskite structural and optical properties, electronic and spintronic response, laser action, and catalysis from varied viewpoints: materials science, chemical engineering, and energy engineering. The four volumes are arranged according to the focus material properties. Volume 1 is focused on the material physical properties including structure, deposition characteristic and the structure of the electronic bands and excitons of these compounds. Volume 2 covers the hybrid perovskite optical properties including the ultrafast optical response, photoluminescence and laser action. Volume 3 contains the spin response of these compounds including application such as spin valves, photogalvanic effect, and magnetic response of light emitting diodes and solar cell devices. Finally, and highly relevant to tomorrow's energy challenges, volume 4 is focused on the physics and device properties of the most relevant applications of the hybrid perovskites, namely photovoltaic solar cells. The text contains many high-quality colorful illustrations and examples, as well as thousands of up-to-date references to peer-reviewed articles, reports and websites for further reading. This comprehensive and well-written handbook is a must-have reference for universities, research groups and companies working with the hybrid organic inorganic perovskites.

applications↗
DOE OSTI2025

Carbene Functionalization of Monolayer Tungsten Disulfide for Enhanced Quantum Emission

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising materials for an array of applications, ranging from conventional field-effect transistors, photodetectors, and light-emitting diodes to their more recent use in quantum photonic technologies. Chemical functionalization of 2D TMDs with organic ligands and adlayers provides an additional means for customizing their electronic and optical properties. While many pathways have been reported for the chemical functionalization of 2D TMDs, their frequent reliance on solution-based methods results in limited control over adlayer thickness and coverage, thus hindering utility in high-performance applications. Here, in this study, we describe the vapor-phase functionalization of a 2D TMD with carbene ligands, specifically tungsten disulfide (WS 2 ) with N-heterocyclic carbenes (NHCs), resulting in molecularly smooth, thin, and uniform adlayers. Reacting NHCs with monolayer WS 2 reduces the broad photoluminescence background observed at cryogenic temperatures by 58%, which facilitates the detection of single-photon emitters from strained monolayer WS 2 , as indicated by second order correlation values ( g (2) ) as low as 0.17 ± 0.07. Chemical characterization coupled with density functional theory calculations suggests that the NHC adlayer has a dual defect-passivation and doping effect on monolayer WS 2 that results in enhanced single-photon emission. Overall, this study establishes vapor-phase carbene functionalization as a homogeneous surface modification scheme for tailoring the quantum emission properties of semiconducting 2D TMDs.

N-heterocyclic carbenes↗
DOE OSTI2025

Increasing the Stability of Deep Blue Phosphor‐Sensitized OLEDs Using the Polariton‐Enhanced Purcell Effect

Abstract The stability of efficient, deep blue organic light‐emitting diodes (OLEDs) remains a major challenge in the field of organic electronics. Poor device stability originates from the high probability for destructive non‐radiative triplet exciton annihilation events. Phosphor‐sensitized fluorescence (PSF) is proposed to achieve an efficient, deep blue color by energy transfer from phosphors to fluorophores. Recently, the polariton‐enhanced Purcell (PEP) effect is introduced to decrease the triplet radiative lifetime and density, resulting in an increase in blue phosphorescent OLED lifetime. Here, the PEP effect is introduced to enhance the stability of the PSF‐OLEDs. It is shown that the PEP effect increases all radiative decay rates of the phosphors and fluorophores, leading to a reduction in the triplet annihilation events. Using a Pt‐complex phosphor sensitizer and a so‐called multi‐resonance fluorescent emitter in a PEP cavity, a 3.1‐fold lifetime increase is observed at a current density ofJ= 10 mA cm −2 , reduced EQE roll‐off and deep blue color with Commission Internationale de l'Eclairage coordinates of (0.13, 0.09). The PEP effect maximally extends PSF‐OLED lifetimes in devices with the highest triplet‐to‐singlet energy transfer rates. Moreover, this work suggests that the benefits of PEPs apply to all triplet‐based OLEDs.

Chemistry↗