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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

An Organic, Direct Bonded Copper, Multi-Layered, Ultra-Low Inductance Package for High-Power UWBG MOSFETs

The most common metalized substrates used in high-power switching packages consist of a ceramic layer such as Aluminum Nitride (AlN) sandwiched between two copper layers. Ceramic substrates are used because it has the key characteristic of having high dielectric strength while being thermally conductive. A large drawback to ceramic substrates is that they do not allow for a multi-layered circuit design. By replacing the traditional ceramic substrate with organic direct bonded copper (ODBC) we can open a wide range of possibilities when it comes to power module layout such as multi-layered circuits and double-sided cooling. Both benefits are critical while packaging high-performance Gallium Oxide (Ga2O3) MOSFETs. Because of Ga2O3's relatively poor thermal conductivity, a double-sided cooled package becomes necessary. Therefore, the use of ODBC provides the flexibility to fabricate copper traces carrying much higher currents, and by creating a multi-layered package, we can drastically reduce the parasitic inductance inside the power module. Achieving lower parasitic inductance is critical for an ultra-fast Ga2O3 package to avoid excessive voltage overshoot and ringing. Using ODBC, we have designed novel packages capable of handling the challenges presented by fast Ga2O3 switching. Using multi-physics modeling software, we can validate our design before building the prototype. Due to the simple process parameters needed to work with ODBC, we can rapidly create prototypes without using external vendors. This flexibility allows us to quickly design, build, and validate highly complex switching power modules to accommodate next generation, Ga2O3 switching devices.

ADVANCED PROPULSION SYSTEMS,ENGINEERING↗
DOE OSTI2026

Stereochemically‐Controlled Fluorinated Copolymers for Selectively Permeable Barrier Applications

Selective oxygen permeability coupled with low water vapor transmission is essential for biomedical and packaging applications requiring controlled oxygen flux under humid conditions. However, most high‐performance barrier polymers depend on perfluoroalkyl substances (PFAS), whose persistence and regulatory restrictions limit their long‐term applicability. We designed a series of stereocontrolled thiol‐yne‐based polyesters, including both fluorinated and non‐fluorinated variants, for selective oxygen permeability with considerable water barrier performance. Tailoring polymer crystallinity and morphology tuned both oxygen transport and mechanical properties. Fluorinated polymers demonstrated enhanced hydrophobicity and water resistance while maintaining oxygen diffusivity within a range relevant to oxygen‐sensing applications. Structure–property relationships were elucidated through small‐ and wide‐angle X‐ray scattering, revealing semi‐crystalline domains influenced by fluorine content and dithiol chain length. Barrier performance was rigorously evaluated via water vapor transmission rate and dynamic vapor sorption, showing reduced water uptake with increasing dithiol monomer length and crystallinity. In conclusion, this work introduces a PFAS‐free alternative to conventional barrier materials and establishes a tunable materials platform with potential relevance for biomedical devices and packaging systems requiring controlled oxygen permeability.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Impact of Thermal Stress on Attachment and Stability of High Temperature Strain Sensors

Static and dynamic strain sensing is required in high-temperature (HT), harsh-environments (HE) for industrial, aerospace, and energy sector applications to ensure equipment and process safety, reduce the cost of operation and maintenance, and increase process efficiency. Challenges that arise in HT HE sensing applications include device mounting, packaging, integrity, and stability to HT HE conditions. In previously reported work, static and dynamic strain surface acoustic wave resonator (SAWR) sensors were fabricated on langasite (LGS) and mounted on Inconel 625 strain beams for wireless testing up to 400°C. In this work, it has been identified that after subjecting the mounted SAWR strain sensor to thermal cycling between 100°C and 425°C, the measured sensitivity to dynamic strain decreased by 73% due to cracking at the adhesive/LGS interface, further deteriorating after additional thermal cycles. Strain modeling of the mounted LGS sensor chip up to 400°C revealed the existence of concentrated strain at the borders of the LGS chip. Microcracks caused by dicing make the chip boarders the most susceptible location for cracks to initiate when the sensor is subjected to thermal stress. In an attempt to mitigate the high strain at the LGS chip borders due to heating, adhesive shaping is proposed in this work. Simulations indicate a strain reduction of 50% at the border is achieved using both circular and triangular adhesive shapes, while also reducing the maximum strain over the entire adhesive/LGS interface by around 30%. Furthermore, the technique is thus promising for improving the integrity, reliability, and stability of static and dynamic strain sensors, particularly while operating under HT HE with several hundreddegree Celsius temperature excursions.

47 OTHER INSTRUMENTATION↗
NASA NTRS1985

Ramp technique for dc partial discharge testing

The partial discharge (PD) data presently obtained by means of a stepwise ramp technique, for the cases of high voltage (HV) components and such resin-packaged HV devices as the Space Telescope's Faint Object Camera, is acquired separately on part-way ramps to rated voltage and on the intermediate voltage plateaus. For test specimens intended for dc service, this ramp method yields more data on insulation integrity than quiescent dc measurements, especially in the case of specimens of high resistivity which causes the discharge frequency to be deceptively low at constant dc voltage. During upward ramping the voltage distribution is capacitive, and the PD behavior resembles that of an ac test. Many more pulses are obtained in the voids without the heat otherwise generated by the application of 60-Hz ac. PD histograms are presented for various materials, with and without intentional defects.

Bever, R. S.↗
NASA NTRS1987

High-Pressure Transducer Package

Enclosure for silicon device ensures accurate measurements of cryogenic liquids. Package holds silicon sensor in uniform compression around periphery and helps ensure accurate, stable, and repeatable pressure measurements. Mounting assembly housed in package of stainless steel. Materials selected for equality of thermal expansion and for pressure-sealing properties. Besides its high-pressure, low-temperature characteristics, package withstands vibrations as severe as 400 times standard gravitational acceleration at 0 to 2,000 Hz.

Wamstad, D.↗
NASA NTRS1991

A cooled 1- to 2-GHz balanced HEMT amplifier

The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.

G. G. Ortiz↗
NASA NTRS1991

A cooled 1-2 GHz balanced HEMT amplifier

The design details and measurement results for a cooled 1-GHz-bandwidth L-band HEMT amplifier are presented. The HEMT noise parameters were measured at a physical temperature of 12 K, and a balanced configuration was adopted. This has the advantage of providing a good input match even though the amplifiers in the two arms of the balanced circuit are poorly matched. However, there are disadvantages. The loss of the input hybrid degrades the noise temperature and coupling errors in the hybrids, and differences between the amplifiers reduce the gain and result in a noise contribution from the input load. In the amplifier described, these effects degrade the noise temperature by less than 1 K. The amplifier uses commercially available packaged HEMT devices. At a physical temperature of 12 K the amplifier achieves noise temperatures between 3 and 6 K over the 1-2-GHz band. The associated gain is about 20 dB.

Padin, Stephen↗
NASA NTRS1993

Role of failure-mechanism identification in accelerated testing

Accelerated life testing techniques provide a short-cut method to investigate the reliability of electronic devices with respect to certain dominant failure mechanisms that occur under normal operating conditions. However, accelerated tests have often been conducted without knowledge of the failure mechanisms and without ensuring that the test accelerated the same mechanism as that observed under normal operating conditions. This paper summarizes common failure mechanisms in electronic devices and packages and investigates possible failure mechanism shifting during accelerated testing.

Hu, J. M.↗
NASA NTRS2001

Development of Electronics for Low-Temperature Space Missions

Electronic systems that are capable of operating at cryogenic temperatures will be needed for many future NASA space missions, including deep space probes and spacecraft for planetary surface exploration. In addition to being able to survive the harsh deep space environment, low-temperature electronics would help improve circuit performance, increase system efficiency, and reduce payload development and launch costs. Terrestrial applications where components and systems must operate in low-temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation systems, and arctic exploration. An ongoing research and development project for the design, fabrication, and characterization of low-temperature electronics and supporting technologies at NASA Glenn Research Center focuses on efficient power systems capable of surviving in and exploiting the advantages of low-temperature environments. Supporting technologies include dielectric and insulating materials, semiconductor devices, passive power components, optoelectronic devices, and packaging and integration of the developed components into prototype flight hardware. An overview of the project is presented, including a description of the test facilities, a discussion of selected data from component testing, and a presentation of ongoing research activities being performed in collaboration with various organizations.

Patterson, Richard L.↗
NASA NTRS2002

Bolometric detectors for the high frequency instrument on the Planck surveyor

The High Frequency Instrument (HFI) on Planck will obtain all-sky images of the Cosmic Microwave Background (CMB) and other astrophysical sources of emission with resolution of 9 arcniin at 100 GHz, 7 arcmin at 143 GHz and 5 arcniin at 217, 353, 545 and 857 GHz. The HFI focal plane will contain 48 silicon nitride micromesh bolometric detectors operating from a 100 mK heat sink. Four detectors in each of the 6 bands will detect the sum of the power in both linear polarizations. An additional 4 pair of detectors will provide sensitivity to linear polarization of emission at 143, 217 and 353 GHz. We report on the development of these detectors, which are being produced at the JPL Micro Devices Laboratory, packaged at JPL Electronics Packaging, characterized at 100 mK before delivery to our HFI consortium partners at the UWCC, UK.

Planck CMB bolometer↗
NASA NTRS1988

Hermetically sealable package for hybrid solid-state electronic devices and the like

A light-weight, inexpensively fabricated, hermetically sealable, repairable package for small electronic or electromechanical units, having multiple connections, is described. A molded ring frame of polyamide-imide plastic (Torlon) is attached along one edge to a base plate formed of a highly heat conducting material, such as aluminum or copper. Bores are placed through a base plate within the area of the edge surface of ring frame which result in an attachment of the ring frame to the base plate during molding. Electrical leads are molded into the ring frame. The leads are L-shaped gold-plated copper wires imbedded within widened portions of the side wall of the ring frame. Within the plastic ring frame wall the leads are bent (typically, though not necessarily at 90 deg) so that they project into the interior volume of the ring frame for connection to the solid state devices.

Miller, Wilson N.↗
DOE OSTI2026

Investigation of coherence of niobium-based resonators enabled by a fast-sealing microwave cavity

Resonators and qubits with a niobium (Nb) base metal layer achieve some of the highest coherence times in superconducting quantum devices. The performance of such devices is often limited by loss associated with two-level systems, which are found primarily at material surfaces and interfaces. The metal-air (MA) interface is a major contributor to device loss. In this work, we develop a fast-sealing microwave cavity that enables devices to be placed under vacuum within five minutes of oxide removal, thereby significantly reducing the MA interface loss compared to common device processing and packaging approaches. Using coplanar stripline resonators, we demonstrate that devices sealed in such a cavity exhibit internal quality factors exceeding one million at single-photon power. After re-exposure to air, the devices show downward resonance frequency shifts and quality factor degradations, quantitatively consistent with a model of Nb oxide regrowth. The fast-sealing microwave cavity provides a practical and consistent method to mitigate MA interface loss and sustain high coherence in Nb devices, and establishes a controlled platform for studying metal oxide regrowth kinetics and dielectric properties, the understanding of which is critical to achieving high coherence in superconducting quantum devices.

Zhang, C. [Waterloo U., IQC; Waterloo U.]↗
NASA NTRS1977

Flat-package DIP handling tool

Device, using magnetic attraction, can facilitate handling of integrated-circuit flat packages and prevent contamination and bent leads. Tool lifts packages by their cases and releases them by operation of manual plunger.

Angelou, E.↗
NASA NTRS2008

IR DirectFET Extreme Environments Evaluation Final Report

In 2007, International Rectifier (IR) introduced a new version of its DirectFET metal oxide semiconductor field effect transistor (MOSFET) packaging. The new version (referred to as 'Version 2') enhances device moisture resistance, makes surface mount (SMT) assembly of these devices to printed wiring boards (PWBs) more repeatable, and subsequent assembly inspection simpler. In the present study, the National Aeronautics Space Administration (NASA) Jet Propulsion Laboratory (JPL), in collaboration with Stellar Microelectronics (Stellar), continued an evaluation of the DirectFET that they started together in 2006. The present study focused on comparing the two versions of the DirectFET and examining the suitability of the DirectFET devices for space applications. This study evaluated both versions of two DirectFET packaged devices that had both been shown in the 2006 study to have the best electrical and thermal properties: the IRF6635 and IRF6644. The present study evaluated (1) the relative electrical and thermal performance of both versions of each device, (2) the performance through high reliability testing, and (3) the performance of these devices in combination with a range of alternate solder alloys in the extreme thermal environments of deep space....

electronic parts packaging↗
NASA NTRS2015

CarbAl Heat Transfer Material

The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.

Fink, Richard↗
NASA NTRS2011

Thermally Conductive Tape Based on Carbon Nanotube Arrays

To increase contact conductance between two mating surfaces, a conductive tape has been developed by growing dense arrays of carbon nanotubes (CNTs, graphite layers folded into cylinders) on both sides of a thermally conductive metallic foil. When the two mating surfaces are brought into contact with the conductive tape in between, the CNT arrays will adhere to the mating surface. The van der Waals force between the contacting tubes and the mating surface provides adhesion between the two mating surfaces. Even though the thermal contact conductance of a single tube-to-tube contact is small, the tremendous amount of CNTs on the surface leads to a very large overall contact conductance. Interface contact thermal resistance rises from the microroughness and the macroscopic non-planar quality of mating surfaces. When two surfaces come into contact with each other, the actual contact area may be much less than the total area of the surfaces. The real area of contact depends on the load, the surface roughness, and the elastic and inelastic properties of the surface. This issue is even more important at cryogenic temperatures, where materials become hard and brittle and vacuum is used, which prevents any gas conduction through the interstitial region. A typical approach to increase thermal contact conductance is to use thermally conducting epoxies or greases, which are not always compatible with vacuum conditions. In addition, the thermal conductivities of these compounds are often relatively low. The CNTs used in this approach can be metallic or semiconducting, depending on the folding angle and diameter. The electrical resistivity of multiwalled carbon nanotubes (MWCNTs) has been reported. MWCNTs can pass a current density and remain stable at high temperatures in air. The thermal conductivity of a MWCNT at room temperature is measured to be approximately 3,000 W/m-K, which is much larger than that of diamond. At room temperature, the thermal conductance of a 0.3 sq cm array of CNTs was measured to be as high as 10 W/K. The high thermal conductivity and the nanoscale size make CNTs ideal as thermal interface materials. The CNT-based thermal tape can be used for the thermal management of microelectronic packages and electronic systems. It also can be integrated with current device technology and packaging. The material would allow for an efficient method to manage excess heat generation without requiring any additional power. Lastly, the CNT tape can be used to enhance thermal contact conductance across two mating surfaces on some NASA missions.

Kashani, Ali↗
DOE OSTI2021

Electric-Drive Vehicle Power Electronics Thermal Management: Current Status, Challenges, and Future Directions

Effective thermal management of traction-drive power electronics is critical to the advancement of electric-drive vehicles and is necessary for increasing power density and improving reliability. Replacing traditional silicon devices with more efficient, higher temperature, higher voltage, and higher frequency wide-bandgap (WBG) devices will enable increased power density but will result in higher device heat fluxes. Compact packaging of high-temperature WBG devices near low-temperature-rated components creates thermal management challenges that need to be addressed for future power-dense systems. This paper summarizes the thermal performance of on-road automotive power electronics thermal management systems and provides thermal performance and pumping-power metrics for select vehicles. Thermal analyses reveal that the package/conduction resistance dominates the total thermal resistance (for existing automotive systems). We model advanced packaging concepts and compare the results with existing packaging designs to quantify their thermal performance enhancements. Double-side-cooled configurations that do not use thermal interface materials are package concepts predicted to provide a low junction-to-fluid thermal resistance (compared to current packages). Dielectric-fluid-cooled concepts enable a redesign of the package to reduce the package resistance, can be implemented in single- and two-phase cooling approaches, and allow for cooling of passive components (e.g., capacitors) and bus bars.

33 ADVANCED PROPULSION SYSTEMS↗