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Safety requirements and guidelines are listed for the sortie module, upper stage vehicle, and space station for the earth orbit operations of the space shuttle program. The requirements and guidelines are for vehicle design, safety devices, warning devices, operational procedures, and residual hazards.
A new class of silicon devices operating without p-n junctions has been studied for radiation hardness. The electric field in these devices is uniform over most of the device, thus causing high-voltage breakdown to increase with electrode spacing. Deep acceptor levels are created in the silicon by diffusing gold atoms into the lattice, or by electron radiation. These acceptor levels, near the center of the band gap, trap out electrons so that the low resistivity of the n-type doped wafer can be raised to intrinsic resistivity. Switching between a high-resistivity state at low currents and a low-resistivity state at high currents occurs at a definite threshold voltage, exhibiting characteristics similar to silicon-controlled rectifiers. Compensating 0.1 ohm-meter (10 ohm-cm) silicon wafers requires electron fluxes of 10 to the 23rd electrons per square meter (10 to the 19th electrons per square centimeter). Experiments demonstrating gamma tolerance to 1 Gigarad(Si) are described. Calculations for maximum tolerable neutron fluence are shown, and a phenomenological explanation for these results is presented.
The results of an investigation on the SEU sensitivity for a fiber optic operating system are reported. Measurements were made on the upset cross sections for the system in static and dynamic modes of operation. The heavy ion SEU test facility at Brookhaven and the proton facility at Harvard University were used in this study. Cross sections were obtained for Honeywell transmitter and reciever devices operating in a system at a frequency of 100 kHz. Both devices were independently irradiated. The results show that the dynamic mode was the worst case, and the receiver was the most sensitive part type in the system. The threshold linear energy transfer (LET) for the receiver was determined to be 1.6 MeV sq cm/mg for the three input signals used in the tests, which were: a continuous high state, a low state, and a 100 kHz square wave.
The goal of this project was to develop a new type of optically triggered, high speed and high power switch for radiofrequency applications with potential to exceed current state-of-the-art power and bandwidth. This device operates under a new operation principle, where discrete packets of charge carriers are generated with defined size. These are then swept out of the device at high enough fields to prevent diffusion and expansion of these packets. Individual pulse widths are determined by the spatial extent of these packets and their drift velocity, which would enable control over both amplitude and frequency by control of the initial packet size, illumination intensity, and applied voltage. This effort demonstrated this new mode of operation, while uncovering a new regime of pulse compression using negative differential mobility (NDM) semiconductors such as GaAs, where the output electrical pulse is substantially shorter than the input optical pulse.
The goal of this project was to develop a new type of optically triggered, high speed and high power switch for radiofrequency applications with potential to exceed current state-of-the-art power and bandwidth. This device operates under a new operation principle, where discrete packets of charge carriers are generated with defined size. These are then swept out of the device at high enough fields to prevent diffusion and expansion of these packets. Individual pulse width are determined by the spatial extent of these packets and their drift velocity, which would enable control over both amplitude and frequency by control of the initial packet size, illumination intensity, and applied voltage. This effort demonstrated this new mode of operation, while uncovering a new regime of pulse compression using negative differential mobility (NDM) semiconductors such as GaAs, where the output electrical pulse is substantially shorter than the input optical pulse.
Mott materials are archetypal quantum systems actively explored as next-generation electronic and photonic platforms, with potential applications spanning non-Von Neumann computing, robotics, energy storage, and microwave technologies. Among these, vanadium dioxide (VO 2 ) has emerged as one of the most intensively studied compounds, owing to its sharp, near-room-temperature insulator-to-metal phase transition. VO 2 also serves as a benchmark system for testing cutting-edge theories and experimental techniques. Here, we directly visualize the electrically driven transition dynamics in VO 2 using a microwave-driven, frequency-tunable pulsed transmission electron microscope that combines nanometer spatial and picosecond temporal resolution. Under high-frequency (MHz–GHz) excitation, we capture the ultrafast nucleation, propagation, and dissolution of metallic domains within an operating device over millions of reversible cycles. We observe the ultrafast formation of consistent metallic nuclei beneath the electrodes, followed by the propagation of a structural phase front at 4.54 nm/ns. Our experiments show that phonon-mediated structural recovery ultimately limits reversible switching of VO 2 at GHz frequencies, and that a tunable regime for reversible operation spans from kHz to GHz through device engineering. Beyond VO 2 , our approach provides a powerful framework for probing non-equilibrium structural transformations in correlated and functional materials under realistic electrical stimuli.
A novel tunable diode laser spectrometer operating at 8-28 microns is described. A blocked impurity band Si:As chip is employed as detector. This device operates in this wavelength range with high detectivity and adequate frequency response for the high-sensitivity techniques used. A combination of sweep averaging and second-harmonic detection at 22 kHz yielded signal-to-noise ratios of 1200 at wavelengths above 20 microns. The sensitivity and spectral resolution achieved are an order of magnitude better than those of Fourier instruments in this range, with an improvement in instrument time response of about 3000. Several molecular bands of CO2 and N2O are observed for what is, to our knowledge, the first time with this instrument. Examples of spectral line measurements are presented.
Understanding the environmental effects of marine energy (ME) devices is fundamental for their sustainable development and efficient regulation. However, measuring effects is difficult given the limited number of operational devices currently deployed. Numerical modeling is a powerful tool for estimating environmental effects and quantifying risks. It is most effective when informed by empirical data and coordinated with the development and implementation of monitoring protocols. We reviewed modeling techniques and information needs for six environmental stressor–receptor interactions related to ME: changes in oceanographic systems, underwater noise, electromagnetic fields (EMFs), changes in habitat, collision risk, and displacement of marine animals. This review considers the effects of tidal, wave, and ocean current energy converters. We summarized the availability and maturity of models for each stressor–receptor interaction and provide examples involving ME devices when available and analogous examples otherwise. Models for oceanographic systems and underwater noise were widely available and sometimes applied to ME, but need validation in real-world settings. Many methods are available for modeling habitat change and displacement of marine animals, but few examples related to ME exist. Models of collision risk and species response to EMFs are still in stages of theory development and need more observational data, particularly about species behavior near devices, to be effective. We conclude by synthesizing model status, commonalities between models, and overlapping monitoring needs that can be exploited to develop a coordinated and efficient set of protocols for predicting and monitoring the environmental effects of ME.
A flash evaporator heat rejection system representative of that proposed for the space shuttle orbiter underwent extensive system testing at the NASA Johnson Space Center (JSC) to determine its operational suitability and to establish system performance/operational characteristics for use in the shuttle system. During the tests the evaporator system demonstrated its suitability to meet the shuttle requirements by: (1) efficient operation with 90 to 95% water evaporation efficiency, (2) control of outlet temperature to 40 + or - 2 F for partial heat load operation, (3) stability of control system for rapid changes in Freon inlet temperature, and (4) repeated dormant-to-active device operation without any startup procedures.
Emerging microelectromechanical sculpturing technology is presently extended, in conjunction with the use of deep semiconductor impurities having extreme flow sensitivities, small masses for shortest time response, and unconventional electrode schemes for elevated-temperature operation, for rocket-engine fuel flow sensing tasks. The radiation component of heat transfer is negligible, so that the device operates on the basis of conduction and convection loss.
Concern is increasing about how quantum effects will impact electronic device operation as down-scaling continues along the SIA Roadmap through 2010. This document describes part of a new semiconductor device modeling (SDM) program at NAS to investigate these concerns by utilizing advanced NAS and third-party numerical computation software to rapidly implement and investigate electronic device models including quantum effects. This SDM project will investigate quantum effects in devices in the classical-quantum transition region, especially sub-0.1 mm MOSFETs. Specific tasks planned for this project include the use of quantum corrections to the classical drift-diffusion and hydrodynamic models of electron transport, arid the use of nominally quantum models including significant scattering.
This paper presents a single-stage series-resonant dual active half bridge (SR-DAHB) inverter suitable for high power applications. The topology is an isolated dual half-bridge circuit with an unfolding bridge. A combined phase-shift and frequency modulation technique is utilized to generate AC power output. In high-power applications where the switching devices operate at relatively high current and voltage, the switching loss becomes the major portion of the converter’s total loss as the devices are turned on and off under hard switching condition. The primary merit of the proposed single-stage SR-DAHB inverter with the combined phase-shift and frequency modulation control is to significantly reduce the switching loss so that it is not a function of load current. A precise and comprehensive power loss model is developed for both the SR-DAHB and DAHB to optimize the operation of the inverters. The objective of the optimization is to minimize the inverter total loss while calculating the optimum combination of frequency and phase shift. A 1.5 kV, 50 kW prototype was built to demonstrate the performance of the SRDAHB versus DAHB inverters with the combined phase-shift and frequency modulation control, and validate the theoretical analysis.
Three-point automatically released suspension and jettisoning system operates independently of lander's power system and releases parachute on touchdown. The system is based on a ball-lock device operated by the shock of the parachute's opening and by the subsequent decay in the load on the main cord.
The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.
Understanding how materials evolve during synthesis, processing, or device operation requires experimental access to structural dynamics across wide ranges of length and time scales, often in bulk samples or even within packaged devices. Time-resolved full-field diffraction X-ray microscopy has recently emerged as a powerful way to meet this need by combining the penetration and structural sensitivity of X-ray diffraction with objective-lens-based magnification, sensitive high-resolution X-ray imaging detectors, and pump-probe and real-time imaging strategies. Advances in full-field X-ray diffraction microscopy, often termed dark-field X-ray microscopy (DFXM), enable simultaneous imaging of extended fields of view while retaining crystallographic selectivity. Time-resolved DFXM promises to enable advances in materials processing and dynamics, electrochemical and photochemical processes, and the design of electronic devices. This Perspective summarizes the key instrumental concepts that define the performance of these methods, including the choice of imaging optics, detector considerations, and the impact of source time structure at synchrotron light sources and X-ray free-electron lasers (XFELs). We discuss the simultaneous use of complementary imaging modes that are increasingly used in practice. The early demonstrations of the potential of time-resolved DFXM include real-time defect and grain-boundary dynamics during metal annealing, stroboscopic imaging of functional devices with high strain sensitivity, and ultrafast pump-probe implementations at XFELs that directly visualize acoustic-wave propagation and energy dissipation in bulk crystals.
Two dimensional digital computers and computer devices operate in parallel on rectangular arrays of digital radiant energy optical signal elements which are arranged in ordered rows and columns. Logic gate devices receive two input arrays and provide an output array having digital states dependent only on the digital states of the signal elements of the two input arrays at corresponding row and column positions. The logic devices include an array of photoconductors responsive to at least one of the input arrays for either selectively accelerating electrons to a phosphor output surface, applying potentials to an electroluminescent output layer, exciting an array of discrete radiant energy sources, or exciting a liquid crystal to influence crystal transparency or reflectivity.
Heterojunction laser diodes of AlGaAs have been prepared with threshold current densities substantially below those previously achieved at room temperature in the 7200-8000-A spectral range. These devices operate continuously with simple oxide-isolated stripe contacts to 7400 A, which extends CW operation into the visible (red) portion of the spectrum.
The use of a variant of the Hartmann test is described to sense the coalignment of the 36 primary mirror segments of the Keck 10-meter Telescope. The Shack-Hartmann alignment camera is a surface-tilt-error-sensing device, operable with high sensitivity over a wide range of tilt errors. An interferometer, on the other hand, is a surface-height-error-sensing device. In general, if the surface height error exceeds a few wavelengths of the incident illumination, an interferogram is difficult to interpret and loses utility. The Shack-Hartmann aligment camera is, therefore, likely to be attractive as a development tool for segmented mirror telescopes, particularly at early stages of development in which the surface quality of developmental segments may be too poor to justify interferometric testing. The constraints are examined which would define the first-order properties of a Shack-Hartmann alignment camera and the precision and range of measurement one could expect to achieve with it are investigated. Fundamental constraints do arise, however, from consideration of geometrical imaging, diffraction, and the density of sampling of images at the detector array. Geometrical imagining determines the linear size of the image, and depends on the primary mirror diameter and the f-number of a lenslet. Diffraction is another constraint; it depends on the lenslet aperture. Finally, the sampling density at the detector array is important since the number of pixels in the image determines how accurately the centroid of the image can be measured. When these factors are considered under realistic assumptions it is apparent that the first order design of a Shack-Hartmann alignment camera is completely determined by the first-order constraints considered, and that in the case of a 20-meter telescope with seeing-limited imaging, such a camera, used with a suitable detector array, will achieve useful precision.