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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

A new electric field effect in silicon solar cells.

The phenomenon of high-resistivity silicon solar cells manifesting high open-circuit voltages previously observed only for cells made from low-resistivity silicon is shown to be caused by the presence of a shallow diffused region at the back surface of the cell. The basic cell structure is either n+, p, p+ or p+, n, n+. The high open-circuit voltage arises from the injection and accumulation of excess majority carriers in the bulk upon illumination or application of forward bias to the structure. A working model for the cell, designated a back surface field (BSF) cell, is described, and recent developments are cited.

Mandelkorn, J.↗
NASA NTRS1996

Application of First Principles Model to Spacecraft Operations

Previous models use a single phase reaction; cycled cell predicts cannot be met with a single phase; interphase conversion provides means for film aging; aging cells predictions display typical behaviors: pressure changes in NiH² cells; voltage fading upon cycling; second plateau on discharge of cycled cells; negative limited behavior for Ni-Cds.

batteries electrodes First Principles Model Ni-Cd ↗
NASA NTRS1991

Impedances of Nickel Electrodes Cycled in Various KOH Concentrations

Impedances were measured of electrodes from boiler-plate cells cycled i n KOH concentrations from 21% to 36%. These cells under accelerated conditions at 80% DOD to failure, defined discharge voltage. Cell life ranged from about 1,000 t o 40 impedances were measured at five voltages corresponding to charge. The results were analyzed using a standard circuit model including a Warburg impedance term. The kinetic resistances and Warburg slopes were greater for those electrodes which had failed earliest. Other circuit models have also been examined. The results are considered indicative but not conclusive, since the cells had been stored after failure for varying lengths of time which is known to affect the impedance. In order to minimize the effects of storage, the electrodes were cycled 10 times before the impedance measurements were taken.

Reid, Margaret A.↗
NASA NTRS1992

Parameterization of solar cells

The aggregation (sorting) of the individual solar cells into an array is commonly based on a single operating point on the current-voltage (I-V) characteristic curve. An alternative approach for cell performance prediction and cell screening is provided by modeling the cell using an equivalent electrical circuit, in which the parameters involved are related to the physical phenomena in the device. These analytical models may be represented by a double exponential I-V characteristic with seven parameters, by a double exponential model with five parameters, or by a single exponential equation with four or five parameters. In this article we address issues concerning methodologies for the determination of solar cell parameters based on measured data points of the I-V characteristic, and introduce a procedure for screening of solar cells for arrays. We show that common curve fitting techniques, e.g., least squares, may produce many combinations of parameter values while maintaining a good fit between the fitted and measured I-V characteristics of the cell. Therefore, techniques relying on curve fitting criteria alone cannot be directly used for cell parameterization. We propose a consistent procedure which takes into account the entire set of parameter values for a batch of cells. This procedure is based on a definition of a mean cell representing the batch, and takes into account the relative contribution of each parameter to the overall goodness of fit. The procedure is demonstrated on a batch of 50 silicon cells for Space Station Freedom.

Appelbaum, J.↗
NASA NTRS1978

Characterization of the effects of metallic impurities on silicon solar cell performance

The effects of controlled concentrations of secondary impurities (Al, C, Ca, Cr, Cu, Fe, Mg, Mn, Mo, Ta, Ti, V, Zn, and Zr), incorporated alone or in combinations into Czochralski and float zone crystals, on the performance of silicon solar cells were investigated. Impurity concentrations ranged from 10 to the 11th to 10 to the 17th/cu cm. Solar cells were fabricated by a conventional diffusion process and characterized by computer reduction of current-voltage data. The data suggest that performance loss primarily results from reduction of the base diffusion length. On the basis of this assumption, a first order analytic model which predicts cell performance as a function of impurity concentrations is developed. Calculated performance parameters are in good agreement with observation, except for some impurities, such as Fe, Cu and Ni, which degrade cells via recombination and defects in the junction space-charge region. N-base devices are less affected by impurities, although degradation mechanisms appear to be the same as in p-devices. There seems to be very limited interaction between impurities in multiply-doped cells.

Davis, J. R.↗
NASA NTRS1977

Theoretical effects of surface diffused region lifetime models on silicon solar cells

A computer simulation of silicon solar cells has indicated that the combination of band gap reduction due to heavy doping and certain spatial forms of lifetime dependence can combine to form severe limitations on the open-circuit voltage of such cells. The interaction of these effects tends to shift the active region of the diffused surface layer away from the injecting junction, resulting in an increase in the current density injected into the surface region. Reductions in open circuit voltage as great as 10% over models which do not include these effects can be seen.

Dunbar, P. M.↗
NASA NTRS1977

Measurement of material parameters that limit the open-circuit voltage in P-N-junction silicon solar cells

The greatest gains in solar energy conversion efficiency of p-n-junction silicon solar cells come from increasing the open-circuit voltage V sub OC; it is important to understand and characterize the material parameters that limit the V sub OC. Strong experimental evidence exists to support the assertion that either an anomalously large minority carrier charge storage or an anomalously small minority carrier lifetime in the quasi-neutral emitter region limits the open circuit voltage. A method is presented for measuring charge storage and effective lifetime. Static and transient measurements are analyzed using physical models of the solar cell characteristics. This analysis yields the emitter charge storage and life-time, which then can be related to the various physical mechanisms, such as energy band gap shrinkage, that have been proposed earlier as responsible for limiting V sub OC.

Lindholm, F. A.↗
NASA NTRS1986

Exact solution of three-dimensional transport problems using one-dimensional models

Several parameters of certain three-dimensional semiconductor devices including diodes, transistors, and solar cells can be determined without solving the actual boundary-value problem. The recombination current, transit time, and open-circuit voltage of planar diodes are emphasized here. The resulting analytical expressions enable determination of the surface recombination velocity of shallow planar diodes. The method involves introducing corresponding one-dimensional models having the same values of these parameters.

Misiakos, K.↗
NASA NTRS2018

GT SUITE Fuel Cell Model Validation with Power Module Test Data

The AES Modular Power Systems (AMPS) Fuel Cell team at the NASA Glenn Research Center (GRC) has created a Microsoft Excel model of a regenerative fuel cell (RFC) system for potential lunar and Martian applications. Due to some limitations of this model, including the ability to predict transient effects in the thermal and fluidic performance of the system, a system-level transient thermal/fluids model was desired. GT-SUITE is a transient multi-physics simulation tool that is popular in the automotive industry and has a built in template for proton exchange membrane (PEM) fuel cells. However, terrestrial fuel cells used in the automotive industry vary significantly from aerospace fuel cells. A validation effort was undertaken to compare GT SUITE model results to actual data collected during the 2015 AMPS Power Module Demonstration in which the AMPS team used a PEM fuel cell system to power a 478 kg rover assembly at the Dunes test site located at GRC. The purpose of the model was to evaluate the efficacy of using GT SUITE to model a non-flow through PEM fuel cell system. The validation effort examined electrochemical performance including fuel cell stack voltage and power supplied, the thermal performance of the stack namely stack temperature and heat rejection rates, and the fluidic performance of the system including pressures, reactant consumption, and water production rates.

Gilligan, Ryan↗
NASA NTRS1981

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Valco, G. J.↗
NASA NTRS1983

Fitting voltage curves with an electrochemically derived equation

Previous work is refined and extended to describe the discharge curve of Ni-Cd cells. Several models are discussed which are based on chronopotentiometry theory and on a thermodynamic approach. Emphasis is placed on improvement of the fit for the initial portion of discharge. Equations are presented which improve the fit for all regions of the discharge curve.

Spritzer, M. S.↗
NASA NTRS1985

Measurement and analysis of solar cell current-voltage characteristics

Approaches to measurement and analysis of solar cell current-voltage characteristics under dark and illuminated conditions are discussed. Measurements are taken with a computer based data acquisition system for temperatures in the range of -100 to +100 C. In the fitting procedure, the various I(oi) and C(i) as well as R(S) and R(SH) are determined. Application to current-voltage analyses of high efficiency silicon cells and Boeing CdS/CuInSe2 are discussed. In silicon MINP cells, it is found that at low voltages a tunneling mechanism is dominant, while at larger voltages the I-V characteristics are usually dominated by emitter recombination. In the case of Boeing cells, a current transport model based on a tunneling mechanism and interface recombination acting in series has been developed as a result of I-V analyses.

Olsen, Larry C.↗
NASA NTRS2004

Thermodynamic Modeling of a Solid Oxide Fuel Cell to Couple with an Existing Gas Turbine Engine Model

The Controls and Dynamics Technology Branch at NASA Glenn Research Center are interested in combining a solid oxide fuel cell (SOFC) to operate in conjunction with a gas turbine engine. A detailed engine model currently exists in the Matlab/Simulink environment. The idea is to incorporate a SOFC model within the turbine engine simulation and observe the hybrid system's performance. The fuel cell will be heated to its appropriate operating condition by the engine s combustor. Once the fuel cell is operating at its steady-state temperature, the gas burner will back down slowly until the engine is fully operating on the hot gases exhausted from the SOFC. The SOFC code is based on a steady-state model developed by The U.S. Department of Energy (DOE). In its current form, the DOE SOFC model exists in Microsoft Excel and uses Visual Basics to create an I-V (current-voltage) profile. For the project's application, the main issue with this model is that the gas path flow and fuel flow temperatures are used as input parameters instead of outputs. The objective is to create a SOFC model based on the DOE model that inputs the fuel cells flow rates and outputs temperature of the flow streams; therefore, creating a temperature profile as a function of fuel flow rate. This will be done by applying the First Law of Thermodynamics for a flow system to the fuel cell. Validation of this model will be done in two procedures. First, for a given flow rate the exit stream temperature will be calculated and compared to DOE SOFC temperature as a point comparison. Next, an I-V curve and temperature curve will be generated where the I-V curve will be compared with the DOE SOFC I-V curve. Matching I-V curves will suggest validation of the temperature curve because voltage is a function of temperature. Once the temperature profile is created and validated, the model will then be placed into the turbine engine simulation for system analysis.

Brinson, Thomas E.↗
NASA NTRS1994

Radiation Resistance Studies of Amorphous Silicon Alloy Photovoltaic Materials

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys was investigated. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below lE14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Woodyard, James R.↗
NASA NTRS1990

Solar array arcing in plasmas

Solar cells in space plasma conditions are known to arc into the plasma when the interconnects are at a negative potential of a few hundred volts, relative to plasma potential. For cells with silver-coated interconnects, a threshold voltage for arcing exists at about -230 V, as found in both ground and LEO experiments. The arc rate beyond the threshold voltage depends nearly linearly on plasma density, but has a strong power-law dependence on voltage, such that for small increments in operating voltage there is a large increment in arc rate. The arcs generate broadband radio interference and visible light. In ground tests, interconnects have been damaged by arcs in cells having insufficient isolation from a source of high current. Models for the arcs are highly dependent on the choice of interconnect conductor material exposed to the plasma and possibly on the geometry and choice of adjacent insulator material. Finally, new technology solar cells use copper for the cell interconnects, a material which may have a lower arcing threshold voltage than silver. It is expected, from ground tests of simulated solar cells, that any junction of conductor and insulator exposed to space plasma conditions will arc into the plasma at a few hundred volts negative potential, relative to the local plasma.

Ferguson, Dale C.↗
NASA NTRS1980

Silicon Research and Technology Workshop report

The materials, structures, processing, modeling and measurements of high efficiency silicon solar cells were surveyed. In the materials area, highlights included: (1) the possibility of improving cell voltages by reducing minority carrier mobilities in critical regions of the solar cells; (2) the need for and possibility of lowering the surface recombination velocity for improvement of open circuit voltage in shallow junction cells; (3) the present need for improved lifetime in high resistivity cells; and (4) the potential for new materials such as polycrystalline or dendritic web material to perform well at end of life in a radiation environment. In the area of structures, distinction was made between those for terrestrial use and those that would survive radiation environments. Areas such as epitaxial growth and laser or elctron beam annealing (and diffusion) were proposed as having certain advantages over more conventional techniques.

Meulenberg, A., Jr.↗
NASA NTRS1983

Relationship between the blue response and open-circuit voltage of high performance silicon solar cells

The relationship between the response at blue wavelengths and the open-circuit voltage of high performance silicon solar cells with a virtually 'transparent' emitter is analyzed. It is shown that a one-dimensional cell model cannot simultaneously model the optical collection properties and operating characteristics of such cells. The analysis highlights the importance of surface conditions and shows that previous conclusions regarding bounds on Auger coefficients imposed by correlating these parameters must be treated with caution.

Green, M. A.↗
NASA NTRS1994

Investigation of the Stability and 1.0 MeV Proton Radiation Resistance of Commercially Produced Hydrogenated Amorphous Silicon Alloy Solar Cells

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below 1E14 sq cm fluences above 1E14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed In dark I-V measurements. The current mechanism were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Lord, Kenneth R., II↗