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NASA NTRS2011

Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

John, Caroline S.↗

NASA NTRS1991

Makeup and uses of a basic magnet laboratory for characterizing high-temperature permanent magnets

A set of instrumentation for making basic magnetic measurements was assembled in order to characterize high intrinsic coercivity, rare earth permanent magnets with respect to short term demagnetization resistance and long term aging at temperatures up to 300 C. The major specialized components of this set consist of a 13 T peak field, capacitor discharge pulse magnetizer; a 10 in. pole size, variable gap electromagnet; a temperature controlled oven equipped with iron cobalt pole piece extensions and a removable paddle that carries the magnetization and field sensing coils; associated electronic integrators; and sensor standards for field intensity H and magnetic moment M calibration. A 1 cm cubic magnet sample, carried by the paddle, fits snugly between the pole piece extensions within the electrically heated aluminum oven, where fields up to 3.2 T can be applied by the electromagnet at temperatures up to 300 C. A sample set of demagnetization data for the high energy Sm2Co17 type of magnet is given for temperatures up to 300 C. These data are reduced to the temperature dependence of the M-H knee field and of the field for a given magnetic induction swing, and they are interpreted to show the limits of safe operation.

Niedra, Janis M.↗

NASA NTRS2011

Characterization of 720 and 940 MHz Oscillators with Chip Antenna for Wireless Sensors from Room Temperature to 200 and 250 deg C

Oscillators that operate at 720 and 940 MHz and characterized over a temperature range of 25 C to 200 C and 250 C, respectively, are presented. The oscillators are designed on alumina substrates with typical integrated circuit fabrication techniques. Cree SiC MESFETs, thin film metal-insulator-metal capacitors and spiral inductors, and Johanson miniature chip antennas make-up the circuits. The output power and phase noise are presented as a function of temperature and frequency. Index Terms MESFETS, chip antennas, oscillators SiC alumina.

Scardelletti, Maximilian C.↗

NASA NTRS1992

Evaluation of high temperature capacitor dielectrics

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Hammoud, Ahmad N.↗

NASA NTRS1974

Study of the use of Metal-Oxide-Silicon (MOS) devices for particulate detection and monitoring in the earth's atmosphere

A metal-oxide-silicon (MOS) capacitor-type particulate sensor was evaluated for use in atmospheric measurements. An accelerator system was designed and tested for the purpose of providing the necessary energy to trigger the MOS-type sensor. The accelerator system and the MOS sensor were characterized as a function of particle size and velocity. Diamond particles were used as particulate sources in laboratory tests. Preliminary tests were performed in which the detector was mounted on an aircraft and flown in the vicinity of coal-fired electric generating plants.

Brooks, A. D.↗

NASA NTRS2004

EHW Approach to Temperature Compensation of Electronics

Efforts are under way to apply the concept of evolvable hardware (EHW) to compensate for variations, with temperature, in the operational characteristics of electronic circuits. To maintain the required functionality of a given circuit at a temperature above or below the nominal operating temperature for which the circuit was originally designed, a new circuit would be evolved; moreover, to obtain the required functionality over a very wide temperature range, there would be evolved a number of circuits, each of which would satisfy the performance requirements over a small part of the total temperature range. The basic concepts and some specific implementations of EHW were described in a number of previous NASA Tech Briefs articles, namely, "Reconfigurable Arrays of Transistors for Evolvable Hardware" (NPO-20078), Vol. 25, No. 2 (February 2001), page 36; Evolutionary Automated Synthesis of Electronic Circuits (NPO- 20535), Vol. 26, No. 7 (July 2002), page 37; "Designing Reconfigurable Antennas Through Hardware Evolution" (NPO-20666), Vol. 26, No. 7 (July 2002), page 38; "Morphing in Evolutionary Synthesis of Electronic Circuits" (NPO-20837), Vol. 26, No. 8 (August 2002), page 31; "Mixtrinsic Evolutionary Synthesis of Electronic Circuits" (NPO-20773) Vol. 26, No. 8 (August 2002), page 32; and "Synthesis of Fuzzy-Logic Circuits in Evolvable Hardware" (NPO-21095) Vol. 26, No. 11 (November 2002), page 38. To recapitulate from the cited prior articles: EHW is characterized as evolutionary in a quasi-genetic sense. The essence of EHW is to construct and test a sequence of populations of circuits that function as incrementally better solutions of a given design problem through the selective, repetitive connection and/or disconnection of capacitors, transistors, amplifiers, inverters, and/or other circuit building blocks. The connection and disconnection can be effected by use of field-programmable transistor arrays (FPTAs). The evolution is guided by a search-andoptimization algorithm (in particular, a genetic algorithm) that operates in the space of possible circuits to find a circuit that exhibits an acceptably close approximation of the desired functionality. The evolved circuits can be tested by mathematical modeling (that is, computational simulation) only, tested in real hardware, or tested in combinations of computational simulation and real hardware.

Stoica, Adrian↗

NASA NTRS1992

Thermal oxidation of single-crystal silicon carbide - Kinetic, electrical, and chemical studies

This paper presents kinetic data from oxidation studies of the polar faces for 3C and 6H SiC in wet and dry oxidizing ambients. Values for the linear and parabolic rate constants were obtained, as well as preliminary results for the activation energies of the rate constants. Examples are presented describing how thermal oxidation can be used to map polytypes and characterize defects in epitaxial layers grown on low tilt angle 6H SiC substrates. Interface widths were measured using Auger electron spectroscopy (AES) with Ar ion beam depth profiling and variable angle spectroscopic ellipsometry (VASE) with effective medium approximation (EMA) models. Preliminary electrical measurements of MOS capacitors are also presented.

Petit, J. B.↗

NASA NTRS2017

Linear Transformer Drivers for Z-pinch Based Propulsion

The MSFC/UAH team has been developing of a novel power management and distribution system called a Linear Transformer Driver (LTD). LTD's hold the promise of dramatically reducing the required mass to drive a z-pinch by replacing the capacitor banks which constitute half the mass of the entire system. The MSFC?UAH tea, is developing this technology in hope of integrating it with the Pulsed Fission Fusion (PuFF) propulsion concept. High-Voltage pulsed power systems used for Z-Pinch experimentation have in the past largely been based on Marx Generators. Marx generators deliver the voltage and current required for the Z-Pinch, but suffer from two significant drawbacks when applied to a flight system: they are very massive, consisting of high-voltage capacitor banks insulated in oil-filled tanks and they do not lend themselves to rapid pulsing. The overall goal of Phase 2 is to demonstrate the construction of a higher voltage stack from a number of cavities each of the design proven in Phase 1 and to characterize and understand the techniques for designing the stack. The overall goal of Phase 3 is to demonstrate the feasibility of constructing a higher energy cavity from a number of smaller LTD stacks, to characterize and understand the way in which the constituent stacks combine, and to extend this demonstration LTD to serve as the basis for a 64 kJ pulse generator for Z-Pinch experiments.

Adams, Robert↗

NASA NTRS2011

Electronic Health Management

Accelerated aging methodologies for electrolytic components have been designed and accelerated aging experiments have been carried out. The methodology is based on imposing electrical and/or thermal overstresses via electrical power cycling in order to mimic the real world operation behavior. Data are collected in-situ and offline in order to periodically characterize the devices' electrical performance as it ages. The data generated through these experiments are meant to provide capability for the validation of prognostic algorithms (both model-based and data-driven). Furthermore, the data allow validation of physics-based and empirical based degradation models for this type of capacitor. A first set of models and algorithms has been designed and tested on the data.

Celaya, Jose R.↗

NASA NTRS1997

High-Temperature Passive Power Electronics

In many future NASA missions - such as deep-space exploration, the National AeroSpace Plane, minisatellites, integrated engine electronics, and ion or arcjet thrusters - high-power electrical components and systems must operate reliably and efficiently in high-temperature environments. The high-temperature power electronics program at the NASA Lewis Research Center focuses on dielectric and insulating material research, the development and characterization of high-temperature components, and the integration of the developed components into a demonstrable 200 C power system - such as an inverter. NASA Lewis has developed high-temperature power components through collaborative efforts with the Air Force Wright Laboratory, Northrop Grumman, and the University of Wisconsin. Ceramic and film capacitors, molypermalloy powder inductors, and a coaxially wound transformer were designed, developed, and evaluated for high-temperature operation.

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NASA NTRS2009

NASA Tech Briefs, October 2009

Topics covered include: Light-Driven Polymeric Bimorph Actuators; Guaranteeing Failsafe Operation of Extended-Scene Shack-Hartmann Wavefront Sensor Algorithm; Cloud Water Content Sensor for Sounding Balloons and Small UAVs; Pixelized Device Control Actuators for Large Adaptive Optics; T-Slide Linear Actuators; G4FET Implementations of Some Logic Circuits; Electrically Variable or Programmable Nonvolatile Capacitors; System for Automated Calibration of Vector Modulators; Complementary Paired G4FETs as Voltage-Controlled NDR Device; Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band; Low-Noise MMIC Amplifiers for 120 to 180 GHz; Using Ozone To Clean and Passivate Oxygen-Handling Hardware; Metal Standards for Waveguide Characterization of Materials; Two-Piece Screens for Decontaminating Granular Material; Mercuric Iodide Anticoincidence Shield for Gamma-Ray Spectrometer; Improved Method of Design for Folding Inflatable Shells; Ultra-Large Solar Sail; Cooperative Three-Robot System for Traversing Steep Slopes; Assemblies of Conformal Tanks; Microfluidic Pumps Containing Teflon[Trademark] AF Diaphragms; Transparent Conveyor of Dielectric Liquids or Particles; Multi-Cone Model for Estimating GPS Ionospheric Delays; High-Sensitivity GaN Microchemical Sensors; On the Divergence of the Velocity Vector in Real-Gas Flow; Progress Toward a Compact, Highly Stable Ion Clock; Instruments for Imaging from Far to Near; Reflectors Made from Membranes Stretched Between Beams; Integrated Risk and Knowledge Management Program -- IRKM-P; LDPC Codes with Minimum Distance Proportional to Block Size; Constructing LDPC Codes from Loop-Free Encoding Modules; MMICs with Radial Probe Transitions to Waveguides; Tests of Low-Noise MMIC Amplifier Module at 290 to 340 GHz; and Extending Newtonian Dynamics to Include Stochastic Processes.

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NASA NTRS1981

Low temperature growth and electrical characterization of insulators for GaAs MISFETS

Progress in the low temperature growth of oxides and layers on GaAs and the detailed electrical characterization of these oxides is reported. A plasma anodization system was designed, assembled, and put into operation. A measurement system was assembled for determining capacitance and conductance as a function of gate voltage for frequencies in the range from 1 Hz to 1 MHz. Initial measurements were carried out in Si-SiO2 capacitors in order to test the system and in GaAs MIS capacitors abricated using liquid anodization.

Borrego, J. M.↗

NASA NTRS1990

Space Electrochemical Research and Technology Conference, 2nd, Cleveland, OH, Apr. 11-13, 1989, Proceedings

Attention is given to topics of advanced concepts, hydrogen-oxygen fuel cells and electrolyzers, nickel electrodes, and advanced rechargeable batteries. Papers are presented on human exploration mission studies, advanced rechargeable sodium batteries with novel cathodes, advanced double-layer capacitors, recent advances in solid-polymer electrolyte fuel cell technology with low platinum loading electrodes, electrocatalysts for oxygen electrodes in fuel cells and water electrolyzers for space applications, and the corrosion testing of candidates for the alkaline fuel cell cathode. Other papers are on a structural comparison of nickel electodes and precursor phases, the application of electrochemical impedance spectroscopy for characterizing the degradation of Ni(OH)2/NiOOH electrodes, advances in lightweight nickel electrode technology, multimission nickel-hydrogen battery cell for the 1990s, a sodium-sulfur battery flight experiment definition study, and advances in ambient-temperature secondary lithium cells.

O'Donnell, Patricia M.↗

NASA NTRS1994

Measurement of n-type Dry Thermally Oxidized 6H-SiC Metal-oxide Semiconductor Diodes by Quasistatic and High-Frequency Capacitance Versus Voltage and Capacitance Transient Techniques

Dry-oxidized n-type 6H-SiC metal-oxide-semiconductor capacitors are investigated using quasistatic capacitance versus voltage (C-V), high-frequency C-V, and pulsed high-frequency capacitance transient (C-t) analysis over the temperature range from 297 to 573 K. The quasistatic C - V characteristics presented are the first reported for 6H-SiC MOS capacitors, and exhibit startling nonidealities due to nonequilibrium conditions that arise from the fact that the recombination/generation process in 6H-SiC is extraordinarily slow even at the highest measurement temperature employed. The high-frequency dark C-V characteristics all showed deep depletion with no observable hysteresis. The recovery of the high-frequency capacitance from deep depletion to inversion was used to characterize the minority-carrier generation process as a function of temperature. Zerbst analysis conducted on the resulting C-t transients, which were longer than 1000 s at 573 K, showed a generation lifetime thermal activation energy of 0.49 eV.

Neudeck, P.↗

NASA NTRS1991

Theoretical and experimental characterization of coplanar waveguide discontinuities for filter applications

A full-wave analysis of shielded coplanar waveguide two-port discontinuities based on the solution of an appropriate surface integral equation in the space domain is presented. Frequency-dependent scattering parameters for open-end and short-end coplanar waveguide (CPW) stubs are computed using this method. The numerically derived results are compared with measurements performed in the frequency range 5-25 GHz and show very good agreement. From the scattering parameters, lumped-element equivalent circuits have been derived to model the discontinuities. The inductors and capacitors of these models have been represented by closed-form equations, as functions of the stub length, to compute the circuit element values for these discontinuities.

Dib, Nihad I.↗

NASA NTRS2019

Distorted Perovskites for High Voltage Dielectric Capacitors

There are several mechanisms which have been proposed for the existence of colossal dielectric constant in the class of perovskite calcium copper titanate (CaCu3Ti4O12 or CCTO) materials. Researches indicate that existence of twinning parallel to (100) (001) and (010) planes causes planar defects and causes changes in local electronic structure. This change can cause insulating barriers locally which contribute to the large dielectric values irrespective of processing. The combination of insulating barriers, defects and displacements caused by twinning have been attributed to the generation of large dielectric constant in CCTO. To examine some of these arguments some researchers replaced Ca with other elements and evaluated this concept. In this study we present the synthesis and characterization of Ga2/3Cu3Ti4O12-xNx (GCTON) material. This provides both distortion due to atomic size difference and defects due to insertion of nitrogen. The morphology of the compound was determined to show that processing has tremendous effect on the dielectric values. The resistivity of GCTON was several order higher than CCTO and dielectric constant was higher than 10,000.

Gill, Puneet↗

NASA NTRS2013

Characterizing the Performance of the Wheel Electrostatic Spectrometer

Insulators need to be discharged after each wheel revolution. Sensor responses repeatable within one standard deviation in the noise of the signal. Insulators may not need to be cleaned after each revolution. Parent Technology- Mars Environmental Compatibility Assessment/Electrometer Electrostatic sensors with dissimilar cover insulators Protruding insulators tribocharge against regolith simulant Developed for use on the scoop for the 2001 Mars Odyssey lander Wheel Electrostatic Spectrometer Embedded electrostatic sensors in prototype Martian rover wheel If successful, this technology will enable constant electrostatic testing on Mars Air ionizing fan used to neutralize the surface charge on cover insulators . WES rolled on JSClA lunar simulant Control experiment -Static elimination not conducted between trials -Capacitor discharged after each experiment Charge neutralization experiment -Static elimination conducted between trials -Capacitor discharged after each experiment. Air ionizing fan used on insulators after each wheel revolution Capacitor discharged after each trial Care was taken to roll WES with same speed/pressure Error bars represent one standard deviation in the noise of e ach sensor

Johansen, Michael R.↗

NASA NTRS1983

Sensitive method for characterizing liquid helium cooled preamplifier feedback resistors

It is pointed out that the simple and traditional method of measuring resistance using an electrometer is ineffective since it is limited to a narrow and nonrepresentative range of terminal voltages. The present investigation is concerned with a resistor measurement technique which was developed to select and calibrate the Transimpedance Mode Amplifier (TIA) load resistors on the Infrared Astronomical Satellite (IRAS) for the wide variety of time and voltage varying signals which will be processed during the flight. The developed method has great versatility and power, and makes it possible to measure the varied and complex responses of nonideal feedback resistors to IR photo-detector currents. When employed with a stable input coupling capacitor, and a narrow band RMS voltmeter, the five input waveforms thouroughly test and calibrate all the features of interest in a load resistor and its associated TIA circuitry.

Smeins, L. G.↗