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Results for “biasing”
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Defect characterization in organic semiconductors by forward bias capacitance-voltage (FB-CV) analysis
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Texture evolution in nanocrystalline iron films deposited using biased magnetron sputtering
Fe thin films were deposited on sodium chloride (NaCl) substrates using magnetron sputtering to investigate means of texture control in free standing metal films. The Fe thin films were studied using transmission electron microscopy equipped with automated crystallographic orientation microscopy. Using this technique, the microstructure of each film was characterized in order to elucidate the effects of altering deposition parameters. The natural tendency for Fe films grown on (100) NaCl is to form a randomly oriented nanocrystalline microstructure. By careful selection of substrate and deposition conditions, it is possible to drive the texture of the film toward a single (100) orientation while retaining the nanocrystalline microstructure.
Decoupling of superposed textures in an electrically biased piezoceramic with a 100 preferred orientation
A method leveraging Rietveld full-pattern texture analysis to decouple induced domain texture from a preferred grain orientation is presented in this paper. The proposed method is demonstrated by determining the induced domain texture in a polar polymorph of 100 oriented 0.91Bi 1/2 Na 1/2 TiO 3 -0.07BaTiO 3 -0.02K 0.5 Na 0.5 NbO 3 . Domain textures determined using the present method are compared with results obtained via single peak fitting. Texture determined using single peak fitting estimated more domain alignment than that determined using the Rietveld based method. These results suggest that the combination of grain texture and phase transitions can lead to single peak fitting under or over estimating domain texture. Finally, while demonstrated for a bulk piezoelectric, the proposed method can be applied to quantify domain textures in multi-component systems and thin films.
Lensing bias to CMB polarization measurements of compensated isocurvature perturbations
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Waveform Optimization for Resonantly Driven MEMS Switches Electrostatically Biased Near Pull-In.
Abstract not provided.
NLTL Frequency Chirp through Dynamic Bias of Inductor Cores.
Abstract not provided.
Freeform Optical Surfaces for Field Biased and Decentered Aperture Reflective Optical Design.
Abstract not provided.
Biases in VIIRS Aerosol Optical Depth Arising from Solar Band Calibration Biases
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Estimating Biases for Regional Methane Fluxes Employing Temporally Varying Random-Field Representations of Biases.
Abstract not provided.
Bias and Bias Uncertainty for High Burnup and Extended Enrichment Fuels in Criticality Safety Analyses Validation Studies
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Fluid simulation of the bias effect in inductive/capacitive discharges
Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6 A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitive discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0–300 V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2 MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120 V at 2 MHz and 90 V at 27.12 MHz.
Experimental and simulation study of target biasing effects on plasma transport in linear plasma device MPS-LD
Linear plasma devices (LPDs) are important experimental platforms for investigating plasma–material interactions (PMI). In PMI experiments, it has been found that applying a target bias not only effectively modifies the incident ion energy, but also induces significant changes in the electron density and electron temperature, whereby the evolution of these plasma parameters is primarily governed by plasma transport processes. However, at present, the physical process and mechanism underlying such bias-induced variations remain unclear. In this work, biasing experiments under argon plasma discharge conditions were first carried out on the MPS-LD device. For the corresponding experiments, an electric potential model was newly developed based on the BOUT++ LPD module, enabling self-consistent simulations of plasma transport under biased conditions. Numerical simulations were then performed to reproduce the experimental results and to validate the accuracy of the proposed model. Finally, by combining experimental measurements with numerical simulations, a bias-voltage scan was performed to investigate how the electron density and electron temperature vary with the bias voltage (U bias ). The results show that applying negative bias decreases the target electron density (n e,T ) while increasing the target electron temperature (T e,T ). In contrast, positive bias increases both n e,T and T e,T ; however, at high positive bias, n e,T first reaches a maximum and subsequently decreases with further increases in U bias . The underlying physical mechanisms are analyzed using particle flux, momentum, and energy conservation. It indicates that the applied bias regulates the parallel electric field, thereby changing ion and electron velocities, and consequently affecting the electron density. At high positive bias, the ion velocity is further influenced by ion viscosity, leading to the reversal in n e,T . Meanwhile, the enhanced parallel electric field drives stronger currents, significantly increasing ion–electron frictional work and converting the input bias power into electron energy, which raises the electron temperature. In conclusion, these results contribute to a deeper understanding of the effects and mechanisms of biasing on plasma transport in the MPS-LD device.
Implications of CO Bias for Ozone and Methane Lifetime in a CCM
A low bias in carbon monoxide compared to observations at high latitudes is a common feature of chemistry climate models. CO bias can both indicate and contribute to a bias in modeled OH and methane lifetime. This study examines possible causes of CO bias in the ACCMIP simulation of the GEOSCCM, and considers how attributing the CO bias to uncertainty in CO emissions versus biases in other constituents impacts the relationship between CO bias and methane lifetime. We use a simplified model of CO tagged by source with specified OH to quantify the sensitivity of the CO bias to changes in CO emissions or OH concentration, comparing the modeled CO to surface and MOPITT observations. The simplified model shows that decreasing OH in the northern hemisphere removes most of the global mean and inter-hemispheric bias in surface CO. We then use results from this analysis to explore how adjusting CO sources in the CCM impacts the concentrations of ozone, OH and methane. The CCM simulation also exhibits biases in ozone and water vapor compared to observations. We use a parameterized CO-OH-CH4 model that takes ozone and water vapor as inputs to the parameterization to examine whether correcting water and ozone biases can alter OH enough to remove the CO bias. Through this analysis, we aim to better quantify the relationship between CO bias and model biases in ozone concentrations and methane lifetime.
Examining Biases in Diurnally-Integrated Shortwave Irradiances due to Two- and Four-Stream Approximations in Cloudy Atmosphere
Shortwave irradiance biases due to two- and four-stream approximations have been studied for the last couple of decades, but biases in estimating Earth’s radiation budget have not been examined in earlier studies. In order to quantify biases in diurnally-averaged irradiances, we integrate the two- and four-stream biases using realistic diurnal variations of cloud properties from Clouds and the Earth’s Radiant Energy System (CERES) synoptic (SYN) hourly product. Three approximations are examined in this study, delta-two-stream-Eddington (D2strEdd), delta- two-stream-quadrature (D2strQuad), and delta-four-stream-quadrature (D4strQuad). Irradiances computed by the Discrete Ordinates Radiative Transfer (DISORT) and Monte Carlo (MC) methods are used as references. The MC noises are further examined by comparing with DISORT results. When the biases are integrated with a one-day of solar zenith angle variation, regional biases of D2strEdd and D2strQuad reach up to 8 W/sq.m, while biases of D4strQuad reach up to 2 W/sq.m. When the biases are further averaged monthly or annually, regional biases of D2strEdd and D2strQuad can reach –1.5 W/sq.m in SW top-of-atmosphere (TOA) upward irradiances and +3 W/sq.m in surface downward irradiances. In contrast, regional biases of D4strQuad are within +0.9 for TOA irradiances and –1.2 W/sq.m for surface irradiances. Except for polar regions, monthly and annual global mean biases are similar, suggesting that the biases are nearly independent to season. Biases in SW heating rate profiles are up to –0.008 K/d for D2strEdd and –0.016 K/d for D2strQuad, while the biases of the D4strQuad method are negligible.