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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Detecting Fractional Chern Insulators in Optical Lattices Through Quantized Displacement

The realization of interacting topological states of matter such as fractional Chern insulators (FCIs) in cold atom systems has recently come within experimental reach due to the engineering of optical lattices with synthetic gauge fields providing the required topological band structures. However, detecting their occurrence might prove difficult since transport measurements akin to those in solid state systems are challenging to perform in cold atom setups and alternatives have to be found. Here, we show that for a ν = 1/2 FCI state realized in the lowest band of a Harper-Hofstadter model of interacting bosons confined by a harmonic trapping potential, the fractionally quantized Hall conductivity σ xy can be accurately determined by the displacement of the atomic cloud under the action of a constant force which provides a suitable experimentally measurable signal for detecting the topological nature of the state. Using matrix-product state algorithms, we show that, in both cylinder and square geometries, the movement of the particle cloud in time under the application of a constant force field on top of the confining potential is proportional to σ xy for an extended range of field strengths.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Lattice and electronic structure of ScN observed by angle-resolved photoemission spectroscopy measurements

Scandium nitride (ScN) has recently attracted much attention for its potential applications in thermoelectric energy conversion, as a semiconductor in epitaxial metal/semiconductor superlattices, as a substrate for GaN growth, and alloying it with AlN for 5G technology. This study was undertaken to better understand its stoichiometry and electronic structure. ScN (100) single crystals 2 mm thick were grown on a single crystal tungsten (100) substrate by a physical vapor transport method over a temperature range of 1900–2000 °C and a pressure of 20 Torr. The core level spectra of Sc 2p 3/2,1/2 and N 1s were obtained by x-ray photoelectron spectroscopy (XPS). The XPS core levels were shifted by 1.1 eV toward higher values as the [Sc]:[N] ratio varied from 1.4 at 1900 °C to ~1.0 at 2000 °C due to the higher binding energies in stoichiometric ScN. Angle-resolved photoemission spectroscopy measurements confirmed that ScN has an indirect bandgap of ~1.2 eV.

42 ENGINEERING↗
DOE OSTI2024

Regioselective On-Surface Synthesis of [3]Triangulene Graphene Nanoribbons

The integration of low-energy states into bottom-up engineered graphene nanoribbons (GNRs) is a robust strategy for realizing materials with tailored electronic band structure for nanoelectronics. Low-energy zero-modes (ZMs) can be introduced into nanographenes (NGs) by creating an imbalance between the two sublattices of graphene. This phenomenon is exemplified by the family of [n]triangulenes (n ϵ $\mathbb{N}$). Here, we demonstrate the synthesis of [3]triangulene-GNRs, a regioregular one-dimensional (1D) chain of [3]triangulenes linked by five-membered rings. Hybridization between ZMs on adjacent [3]triangulenes leads to the emergence of a narrow band gap, E g,exp ~ 0.7 eV, and topological end states that are experimentally verified using scanning tunneling spectroscopy. Tight-binding and first-principles density functional theory calculations within the local density approximation corroborate our experimental observations. Our synthetic design takes advantage of a selective on-surface head-to-tail coupling of monomer building blocks enabling the regioselective synthesis of [3]triangulene-GNRs. Detailed ab initio theory provides insights into the mechanism of on-surface radical polymerization, revealing the pivotal role of Au-C bond formation/breakage in driving selectivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗
DOE OSTI2023

Optical constants of polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As determined by variable-angle spectroscopic ellipsometry

The optical constants of single-crystal Al x Ga 1-x P and Al x Ga 1-x As have been widely studied at various Al compositions but have not yet been thoroughly investigated as polycrystalline materials. Using variable-angle spectroscopic ellipsometry, we estimate and analyze the optical constants of polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As that were non-epitaxially deposited at deposition temperatures of either 250 or 420 °C, and with various dopant species, dopant concentrations, and V/III flux ratios. Here, for wavelengths of 350–400 nm, decreasing the V/III ratio increases the refractive index of Be-doped polycrystalline Al 0.25 Ga 0.75 P. For wavelengths >500 nm, as the targeted Be dopant concentration increases for polycrystalline Al 0.25 Ga 0.75 P, the amount the extinction coefficient increases and the indirect bandgap decreases depends on the V/III ratio. Furthermore, Si-doped polycrystalline Al 0.25 Ga 0.75 P has significantly smaller extinction coefficient values than when it is Be-doped, for the same V/III ratio and targeted doping concentration, at wavelengths >500 nm. Based on our findings, we hypothesize that the dopant species, dopant concentration, and the V/III ratio dictate various types of defect concentrations, which then affect the optical constants and indirect bandgap of polycrystalline Al 0.25 Ga 0.75 P. Additionally, for wavelengths >500 nm, we find that polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As have the lowest extinction coefficient values when deposited at 420 °C, as opposed to 250 °C. Thus, we hypothesize that the deposition temperature is the most significant factor in dictating the optical constants of these polycrystalline III-Vs. Ultimately, this work demonstrates alternative methods to tune the optical constants of polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As, as opposed to tuning the Al composition.

42 ENGINEERING↗
DOE OSTI2023

Ultrafast Optomechanical Strain in Layered GeS

Strong coupling between light and mechanical strain forms the foundation for next-generation optical micro- and nano-electromechanical systems. Such optomechanical responses in two-dimensional materials present novel types of functionalities arising from the weak van der Waals bond between atomic layers. In this paper, by using structure-sensitive megaelectronvolt ultrafast electron diffraction, we report the experimental observation of optically driven ultrafast in-plane strain in the layered group IV monochalcogenide germanium sulfide (GeS). Surprisingly, the photoinduced structural deformation exhibits strain amplitudes of order 0.1% with a 10 ps fast response time and a significant in-plane anisotropy between zigzag and armchair crystallographic directions. Rather than arising due to heating, experimental and theoretical investigations suggest deformation potentials caused by electronic density redistribution and converse piezoelectric effects generated by photoinduced electric fields are the dominant contributors to the observed dynamic anisotropic strains. Our observations define new avenues for ultrafast optomechanical control and strain engineering within functional devices.

2D materials↗
DOE OSTI2025

Floquet–Bloch manipulation of the Dirac gap in a topological antiferromagnet

Floquet–Bloch manipulation, achieved by driving a material periodically with a laser pulse, is a method that enables the engineering of electronic and magnetic phases in solids by effectively modifying the structure of their electronic bands. However, the application of Floquet–Bloch manipulation in topological magnetic systems, particularly those with inherent disorder, remains largely unexplored. Here, in this study, we realize Floquet–Bloch manipulation of the Dirac surface-state mass of the topological antiferromagnet MnBi 2 Te 4 . Using time- and angle-resolved photoemission spectroscopy, we show that opposite helicities of mid-infrared circularly polarized light result in substantially different Dirac mass gaps in the antiferromagnetic phase, despite the equilibrium Dirac cone being massless. We explain our findings in terms of a Dirac fermion with a random mass. Our results underscore Floquet–Bloch manipulation as a powerful tool for controlling topology, even in the presence of disorder, and for uncovering properties of materials that may elude conventional probes.

42 ENGINEERING↗
DOE OSTI2022

A topological kagome magnet in high entropy form

AbstractTopological kagome magnets RMn 6 Sn 6 (R = rare earth element) attract numerous interests due to their non-trivial band topology and room-temperature magnetism. Here, we report a high entropy version of kagome magnet, (Gd 0.38 Tb 0.27 Dy 0.20 Ho 0.15 )Mn 6 Sn 6 . Such a high entropy material exhibits multiple spin reorientation transitions, which is not seen in all the related parent compounds and can be understood in terms of competing magnetic interactions enabled by high entropy. Furthermore, we also observed an intrinsic anomalous Hall effect, indicating that the high entropy phase preserves the non-trivial band topology. These results suggest that high entropy may provide a route to engineer the magnetic structure and expand the horizon of topological materials.

36 MATERIALS SCIENCE↗
NASA NTRS2006

Assessment of Bulk Absorber Properties for Multi-Layer Perforates in Porous Honeycomb Liners

CONTINUING progress in materials technology provides potential for improved acoustic liners for attenuating broadband fan noise emissions from aircraft engine nacelles. Conventional liners (local-reacting perforate-over-honeycomb structures) provide significant narrow-band attenuation, but limited attenuation over wide bandwidths. Two approaches for increasing attenuation bandwidth are to (1) replace the honeycomb structure with bulk material, or (2) cascade multiple layers of perforate/honeycomb structures. Usage of the first approach is limited because of mechanical and maintenance reasons, while multi-layer liners are limited to about three layers because of their additional mechanical complexity, depth and weight. The current research concerns a novel approach reported by the University of Cincinnati, in which a single-layer conventional liner is converted into an extended-reaction, broadband absorber by making the honeycomb core structure porous. This modified single-layer liner requires no increase in depth and weight, and minimal increase in mechanical complexity. Langley has initiated research to identify potential benefits of liner structures with porous cell walls. This research has two complementary goals: (1) develop and validate experimental techniques for treating multi-layer perforates (representative of the internal cells of a liner with porous cell walls) as 1-D bulk materials, and (2) develop analytical approaches to validate this bulk material assumption. If successful, the resultant model can then be used to design optimized porous honeycomb liners. The feasibility of treating an N-layer perforate system (N porous plates separated by uniform air gaps) as a one-dimensional bulk absorber is assessed using the Two-Thickness Method (TTM), which is commonly used to educe bulk material intrinsic acoustic parameters. Tests are conducted with discrete tone and random noise sources, over an SPL range sufficient to determine the nonlinearity of the test specimens, for test specimens consisting of 5, 10 and 15% porous plates. Measured impedances for two liner thicknesses (e.g., 12 and 24 layers) are used as input to the TTM to determine the characteristic impedance and propagation constant that characterize these liners as bulk absorbers. These parameters are then used to calculate the predicted impedance of liners with different thicknesses (e.g., 36 layers), and a comparison of predicted and measured impedances for these other thicknesses is used to determine the efficacy of this approach. Finally, an independent method is used to educe the propagation constant for a single representative sample, and excellent comparison between the results for this method and those for the TTM provides increased confidence in the results achieved with the TTM. In general, the results demonstrate these multi-layer perforates can be acceptably treated as bulk absorbers.

Jones, Michael G.↗
DOE OSTI2020

Quantum anomalous Hall effect in two-dimensional magnetic insulator heterojunctions

Abstract Recent years have witnessed tremendous success in the discovery of topological states of matter. Particularly, sophisticated theoretical methods in time-reversal-invariant topological phases have been developed, leading to the comprehensive search of crystal database and the prediction of thousands of topological materials. In contrast, the discovery of magnetic topological phases that break time reversal is still limited to several exemplary materials because the coexistence of magnetism and topological electronic band structure is rare in a single compound. To overcome this challenge, we propose an alternative approach to realize the quantum anomalous Hall (QAH) effect, a typical example of magnetic topological phase, via engineering two-dimensional (2D) magnetic van der Waals heterojunctions. Instead of a single magnetic topological material, we search for the combinations of two 2D (typically trivial) magnetic insulator compounds with specific band alignment so that they can together form a type-III broken-gap heterojunction with topologically non-trivial band structure. By combining the data-driven materials search, first-principles calculations, and the symmetry-based analytical models, we identify eight type-III broken-gap heterojunctions consisting of 2D ferromagnetic insulators in the MXY compound family as a set of candidates for the QAH effect. In particular, we directly calculate the topological invariant (Chern number) and chiral edge states in the MnNF/MnNCl heterojunction with ferromagnetic stacking. This work illustrates how data-driven material science can be combined with symmetry-based physical principles to guide the search for heterojunction-based quantum materials hosting the QAH effect and other exotic quantum states in general.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Enhanced Coherence in Superconducting Circuits via Band Engineering

In superconducting circuits interrupted by Josephson junctions, the dependence of the energy spectrum on offset charges on different islands is 2e periodic through the Aharonov-Casher effect and resembles a crystal band structure that reflects the symmetries of the Josephson potential. We show that higher-harmonic Josephson elements described by a cos(2φ) energy-phase relation provide an increased freedom to tailor the shape of the Josephson potential and design spectra featuring multiplets of flat bands and Dirac points in the charge Brillouin zone. Flat bands provide noise-insensitive energy levels, and consequently, engineering band pairs with flat spectral gaps can help improve the coherence of the system. We discuss a modified version of a flux qubit that achieves, in principle, no decoherence from charge noise and introduce a flux qutrit that shows a spin-1 Dirac spectrum and is simultaneously quite robust to both charge and flux noise.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Surface engineering with oxidized Ti 3 C 2 T x MXene enables efficient and stable p-i-n-structured CsPbI 3 perovskite solar cells

All-inorganic CsPbI 3 perovskite has a near-ideal band gap, high thermal stability, and simple material composition, thus presenting a promising option for developing perovskite/Si tandem solar cells. However, CsPbI 3 undergoes a rapid phase transition under exposure to moisture and exhibits a significant performance gap relative to other perovskite compounds, particularly in the p-i-n structure favored for perovskite/Si tandems. In this work, we demonstrate highly efficient and stable p-i-n-structured CsPbI 3 perovskite solar cells by surface engineering the CsPbI 3 layer with oxidized Ti 3 C 2 T x MXene (OMXene) nanoplates via spray coatings. OMXene provides a physical barrier against moisture and improves charge separation at the perovskite-electron transporting layer interface via an enhanced electric field. Consequently, we demonstrated CsPbI 3 /OMXene-based p-i-n devices with efficiencies of 19.69% for 0.096-cm 2 cells and 14.64% for 25-cm 2 minimodules. The encapsulated minimodule showed good stability, retaining ~85% of the initial efficiency under simultaneous damp heat (85°C/85% relative humidity) and 1-sun light soaking for over 1,000 h.

14 SOLAR ENERGY↗
DOE OSTI2022

A first-principles investigation of point defect structure and energetics in ThO 2

The structure and energetics of charged point defects in thorium dioxide (ThO 2 ) have been investigated using the density functional theory (DFT) and phonon simulations. DFT simulations were performed under both zero-pressure and constant volume conditions. Termed as the free volume change of the point defects, the change in volume of the supercell has been computed in the zero-pressure case. Supercell expansion was observed with the increase of the (nominal) charge state of anion (O) interstitials and cation (Th) vacancies from neutral to its maximum. On the contrary, contraction of the supercell has been observed with anion vacancies and cation interstitials as the defect charge increases. The supercell volume change with respect to the charge state has been correlated with the resulting defect energetics. It has been observed that, as the defect charge increased, the internal energy and entropy of defect formation of the cation vacancies and anion interstitials were found to increase, while that of the cation interstitials and anion vacancies decreased. Here, the temperature dependence of internal energy and entropy has also been examined. It was found that, as the temperature increases, the internal energies of the formation of cation vacancies and anion interstitials decrease, while those of the cation interstitials and anion vacancies increase. An opposite observation is seen for the entropies of formation defects when above room temperatures.

42 ENGINEERING↗
NASA NTRS2011

Adding a Second Ku-Band Antenna to the International Space Station

The International Space Station, as originally developed, used the Ku-Band Tracking and Data Relay Satellite System communications link to transmit non-critical data to the ground. Since becoming operational, the use for the link evolved to include additional services that, although also not critical, were deemed to be necessary for the crew. The external Ku-Band Antennas were designed for transport to the ISS in the shuttle cargo bay and thus are not suitable for manifesting on any current cargo vehicle. The original intent was to stow two spare antennas on orbit in a protective container until such time as they were needed to replace a failing unit which is a long and complicated process due to the complexity of the removal and replacement procedure. The Boeing Company proposed manifesting one of those spare antennas in an operable configuration eliminating the need for an Extravehicular Activity (EVA) to correct the first failure and as such minimizing the time to hours rather than weeks required to restore the Ku-Band communications link after failures. After the first failure, an EVA would be scheduled to replace the failed antenna with the stowed spare antenna. Because the hot spare is activated internal to the ISS, the replacement of the failed unit can be done when convenient rather than in haste. This paper describes the methodology used to locate a suitable site to add a new antenna mast to the ISS as well the process followed to fabricate, deliver and install the new interface hardware. Because this was not planned when the ISS was originally designed, structural, power, data and Intermediate Frequency signal connections had to be found for use. With the movement of the P6 solar array element from the initial location in the center zenith location of the ISS to the end of the port side of the truss and concurrent relocation of one string of S-Band communications assets, there were candidate power, data and structural connections available on the Z1 Truss. The engineering team evaluated these residual interfaces for use and designed cabling and structural elements for the candidate interfaces. The antenna was recently installed on ULF-4 and has completed a preliminary checkout. Included in this check out were evaluation of the power level received from the TDRS and evaluation of the gimbal position feedback for consideration in the static bias pointing matrix. This process demonstrates the ability to modify and upgrade manned space vehicles as either need or technology requires.

DuSold, Chuck↗
NASA NTRS1999

Fatigue Analyses Under Constant- and Variable-Amplitude Loading Using Small-Crack Theory

Studies on the growth of small cracks have led to the observation that fatigue life of many engineering materials is primarily "crack growth" from micro-structural features, such as inclusion particles, voids, slip-bands or from manufacturing defects. This paper reviews the capabilities of a plasticity-induced crack-closure model to predict fatigue lives of metallic materials using "small-crack theory" under various loading conditions. Constraint factors, to account for three-dimensional effects, were selected to correlate large-crack growth rate data as a function of the effective stress-intensity factor range (delta-Keff) under constant-amplitude loading. Modifications to the delta-Keff-rate relations in the near-threshold regime were needed to fit measured small-crack growth rate behavior. The model was then used to calculate small-and large-crack growth rates, and to predict total fatigue lives, for notched and un-notched specimens under constant-amplitude and spectrum loading. Fatigue lives were predicted using crack-growth relations and micro-structural features like those that initiated cracks in the fatigue specimens for most of the materials analyzed. Results from the tests and analyses agreed well.

Newman, J. C., Jr.↗
NASA NTRS1999

Analyses of Fatigue and Fatigue-Crack Growth under Constant- and Variable-Amplitude Loading

Studies on the growth of small cracks have led to the observation that fatigue life of many engineering materials is primarily crack growth from micro-structural features, such as inclusion particles, voids, slip-bands or from manufacturing defects. This paper reviews the capabilities of a plasticity-induced crack-closure model to predict fatigue lives of metallic materials using small-crack theory under various loading conditions. Constraint factors, to account for three-dimensional effects, were selected to correlate large-crack growth rate data as a function of the effective stress-intensity factor range (delta K(sub eff)) under constant-amplitude loading. Modifications to the delta K(sub eff)-rate relations in the near-threshold regime were needed to fit measured small-crack growth rate behavior. The model was then used to calculate small- and large-crack growth rates, and to predict total fatigue lives, for notched and un-notched specimens under constant-amplitude and spectrum loading. Fatigue lives were predicted using crack-growth relations and micro-structural features like those that initiated cracks in the fatigue specimens for most of the materials analyzed. Results from the tests and analyses agreed well.

Newman, J. C., Jr.↗
DOE OSTI2021

Ferroelectric and Charge Transport Properties in Strain-Engineered Two-Dimensional Lead Iodide Perovskites

Transitions from three-dimensional (3D) hybrid organic–inorganic perovskite (HOIP) structures to lower dimensions including 2D and quasi-2D structures open a new range of functional properties in these materials systems. Yet, the performance of solar cells made from 2D HOIP is below that of the 3D compositions due to the higher band-gap energy, low carrier concentration, and anisotropy in charge transport. Controlling ferroelectricity in 2D HOIPs is considered to be a powerful strategy to drive the spatial separation of photogenerated charge carriers to improve the photovoltaic action in this class of HOIPs. Here, we explore the strain-dependent ferroelectricity and charge carrier properties in strain-engineered 2D-layered HOIPs utilizing advanced scanning probe microscopy (SPM) techniques. Band excitation-piezoresponse force microscopy (BE-PFM) and contact Kelvin probe force microscopy (cKPFM) reveal ferroelectric domains and switchable dynamics with significantly low switching voltages in the low-strain film. Photoluminescence (PL) spectroscopy shows strain-dependent optical properties and a noncentrosymmetric structure with strong second-harmonic generation (SHG) peaks in the low-strain film. In addition, KPFM results demonstrate a higher surface potential in the low-strain films, while the photovoltage and local current are the highest on the high-strain film. Furthermore, our study demonstrates the critical role of strain engineering on the electromechanical and charge carrier dynamics in 2D HOIPs, which is important for development of 2D HOIP devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Light–matter coupling in large-area van der Waals superlattices

Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. In this study, we present optical dispersion engineering in a superlattice structure comprising alternating layers of 2D excitonic chalcogenides and dielectric insulators. By carefully designing the unit cell parameters, we demonstrate greater than 90% narrow band absorption in less than 4 nm of active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in square-centimetre samples. These superlattices show evidence of strong light–matter coupling and exciton–polariton formation with geometry-tuneable coupling constants. Our results demonstrate proof of concept structures with engineered optical properties and pave the way for a broad class of scalable, designer optical metamaterials from atomically thin layers.

2D Crystals↗