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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Thick Electrode Design for Facile Electron and Ion Transport: Architectures, Advanced Characterization, and Modeling

The demand for lithium ion batteries continues to expand for powering applications such as portable electronics, grid-scale energy storage, and electric vehicles. As the application requirements advance, the innovation of lithium ion batteries toward higher energy density and power output is required. Along with the investigation of new materials, an important strategy for increasing battery energy content is to design electrodes with high areal loading to minimize the fraction of nonactive materials such as current collectors, separators, and packaging components, resulting in significant gains in energy content and the reduction of the system-level cost. However, the adoption of thick high areal loading electrodes has been impeded by sluggish charge transport and mechanical instability. With conventional slurry cast electrodes, battery function significantly deteriorates with increases in electrode thickness due to high cell polarization and the incomplete utilization of active materials. Thus, a consideration of approaches that facilitate an understanding and eventual adoption of high-loading electrodes is warranted to enable the deliberate advancement of next-generation batteries. Herein, this Account considers three aspects critical to the science and technology of thick high-loading electrodes. The first discussion covers recent approaches to the design and fabrication of high-loading electrodes. Ensuring electrical contact throughout the electrode is accomplished through the manipulation of conductive additives or using a conductive scaffold within the electrode. Ion transport can be facilitated through electrode design and fabrication approaches that deliberately control the electrode porosity and tortuosity. Second, advanced characterization methodologies are presented as the ability to determine the origins of transport limitations provide the insight needed to deliberately approach future designs. Spectroscopic and diffraction methods have been used to characterize the 2D and 3D pore structure and composition of the electrodes. Furthermore, operando methods that yield spatially and temporally resolved information regarding the progression of the electrochemical reaction are highlighted. The third aspect considered is the utilization of modeling. Physically based continuum models linked with the results of experimental characterization have been demonstrated and then allow the rapid simulation of a variety of deliberate electrode designs and their impacts on functional electrochemistry. Variables relevant to the designs can be tested by the model under a series of use conditions to identify those of most promise for a specific application. Finally, an outlook on future opportunities for high-loading battery electrode research is provided to inform and entice practitioners in the field to pursue these important directions of inquiry.

25 ENERGY STORAGE↗
DOE OSTI2022

Making Wireless Power Matter (CRADA Final Report)

The Resonant Link project team investigated the integration of their novel, self-resonant magnetic structure for electromagnetic coils into inductive wireless power transfer systems. Relative to conventional wireless power coils, their multi-layer self-resonant structure (the “MSRS”) reduces losses by up to 6x and lowers to BOM cost by up to 10x. These power-dense, cost-effective coils are a promising path towards the first value-add wireless power systems in a variety of applications, from phones to medical devices to kitchen appliances to mobile robots to electric vehicles. The researchers explored development of the power electronics for wireless power transfer systems using the multi-layer self-resonant structure (MSRS) concept that efficiently transmits power over air gaps for in-home applications, including through-wall power transfer, appliances built around the Ki and Qi standards, and other potential use cases This project specifically focused on the power electronics design, development, and testing for these applications. Resonant Link’s proprietary wireless power technology holds the promise of matching the performance of wired chargers in size and efficiency, especially when operated from a DC distribution grid.

42 ENGINEERING↗
NASA NTRS1995

Applications of Silicon Carbide for High Temperature Electronics and Sensors

Silicon carbide (SiC) is a wide bandgap material that shows great promise in high-power and high temperature electronics applications because of its high thermal conductivity and high breakdown electrical field. The excellent physical and electronic properties of SiC allows the fabrication of devices that can operate at higher temperatures and power levels than devices produced from either silicon or GaAs. Although modern electronics depends primarily upon silicon based devices, this material is not capable of handling may special requirements. Devices which operate at high speeds, at high power levels and are to be used in extreme environments at high temperatures and high radiation levels need other materials with wider bandgaps than that of silicon. Many space and terrestrial applications also have a requirement for wide bandgap materials. SiC also has great potential for high power and frequency operation due to a high saturated drift velocity. The wide bandgap allows for unique optoelectronic applications, that include blue light emitting diodes and ultraviolet photodetectors. New areas involving gas sensing and telecommunications offer significant promise. Overall, the properties of SiC make it one of the best prospects for extending the capabilities and operational regimes of the current semiconductor device technology.

Silicon Carbide↗
DOE OSTI2024

Use of Grid-Forming Medium-Voltage Power Electronics Hub in a Microgrid Setting

This paper presents the application of a new design of a multiport, modular, medium-voltage power electronics hub (M3PE-HUB) in a microgrid setting. The M3PE-HUB system was modeled in a digital real-time simulator (DRTS) and integrated into the Banshee microgrid test system. This paper presents the preliminary DRTS simulation-based results of the M3PE-HUB system connected in a test microgrid system. Verification and validation of the M3PE-HUB architecture and controls in the test microgrid setting are the primary contributions of this work. The results of the operation during the islanding and resynchronization process indicate the feasibility of the proposed architecture in a microgrid setting. This paper also presents results for a system reconfiguration use case where the M3PE-HUB was used to reconfigure the system under a fault condition.

grid forming↗
DOE OSTI2023

Ultrathin stable Ohmic contacts for high-temperature operation of β -Ga2O3 devices

Beta gallium oxide (β-Ga2O3) shows significant promise in high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperatures present unique thermodynamic challenges. The current most common Ohmic contact design based on 20 nm of Ti has been repeatedly demonstrated to fail at even moderately elevated temperatures (300–400 °C) due to a combination of nonstoichiometric Ti/Ga2O3 interfacial reactions and kinetically favored Ti diffusion processes. Here, we demonstrate stable Ohmic contacts for Ga2O3 devices operating up to 500–600 °C using ultrathin Ti layers with a self-limiting interfacial reaction. The ultrathin Ti layer in the 5 nm Ti/100 nm Au contact stack is designed to fully oxidize while forming an Ohmic contact, thereby limiting both thermodynamic and kinetic instability. This novel contact design strategy results in an epitaxial conductive anatase titanium oxide interface layer that enables low-resistance Ohmic contacts that are stable both under long-term continuous operation (>500 h) at 600 °C in vacuum (≤10−4 Torr), as well as after repeated thermal cycling (15 times) between room temperature and 550 °C in flowing N2. This stable Ohmic contact design will accelerate the development of high-temperature devices by enabling research focus to shift toward rectifying interfaces and other interfacial layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Ultrawide bandgap heterojunction p–n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current–voltage characteristics show a turn-on voltage of Vbi≈5.5 V, a minimum room temperature ideality factor of η≈1.63, and more than 12 orders of current modulation at room temperature. A stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300 °C. The one-sided n+–p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance–voltage profile. The measured average mobile hole density is p∼5.7×1017 cm−3, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n+ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p–n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.

Physics↗
DOE OSTI2024

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.

Physics↗
DOE OSTI2021

Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes

Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical parameter that not only determines device performance but is also a diagnostic of material quality. Here we present the use of electron-beam induced current to measure carrier diffusion lengths in continuously grown and etched-and-regrown GaN pin diodes as models for interfaces in more complex devices. Variations in the quality of the etched-and-regrown junctions are observed and shown to be due to the degradation of the n-type material. Finally, we observe an etched-and-regrown junction with properties comparable to a continuously grown junction.

42 ENGINEERING↗
DOE OSTI2021

Computational Evaluation of Thermal Response of Open-Cell Foam With Circular Pore (Computional Evaluation of Thermal Response of Open-Cell Foam with Circular Pore)

The evaluation of effective material properties in heterogeneous materials (e.g., composites or multicomponent structures) critically relevant to a wide spectrum of applications, including nuclear power, electronic packaging, flame retardants, hypersonics, and gas turbine power. The work described in this paper is centered around the numerical assessment of the thermal behavior of porous materials obtained from finite element thermal modeling and simulation. Here, two-dimensional, steady state analyses were performed on unit cells with centered, circular pores using a second order accurate Galerkin finite element method (FEM). The effective thermal conductivities of the porous systems were examined, encompassing a range of porosities from 4.9% to 60.1%. The geometries of the models were generated based on ordered circular pores for each modeled porosity level. The system response quantity (SRQ) under investigation was the dimensionless effective thermal conductivity across the unit cell. The dimensionless effective thermal conductivity was compared across all simulated cases, producing a trend between porosity and effective thermal conductivity. In the presented investigation, the method of manufactured solutions (MMS) was used to perform code verification, and the grid convergence index (GCI) was employed to estimate discretization uncertainty as solution verification. Code verification concluded an approximately second order accurate Galerkin FEM solver. It was found that the introduction of porosity to the unit cell material structure reduces effective thermal conductivity, as anticipated. Numerical results obtained in this study are compared to an analytical solution and to a sample of empirical data.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Physics-Informed Neural Networks for Heat Transfer Problems

Abstract Physics-informed neural networks (PINNs) have gained popularity across different engineering fields due to their effectiveness in solving realistic problems with noisy data and often partially missing physics. In PINNs, automatic differentiation is leveraged to evaluate differential operators without discretization errors, and a multitask learning problem is defined in order to simultaneously fit observed data while respecting the underlying governing laws of physics. Here, we present applications of PINNs to various prototype heat transfer problems, targeting in particular realistic conditions not readily tackled with traditional computational methods. To this end, we first consider forced and mixed convection with unknown thermal boundary conditions on the heated surfaces and aim to obtain the temperature and velocity fields everywhere in the domain, including the boundaries, given some sparse temperature measurements. We also consider the prototype Stefan problem for two-phase flow, aiming to infer the moving interface, the velocity and temperature fields everywhere as well as the different conductivities of a solid and a liquid phase, given a few temperature measurements inside the domain. Finally, we present some realistic industrial applications related to power electronics to highlight the practicality of PINNs as well as the effective use of neural networks in solving general heat transfer problems of industrial complexity. Taken together, the results presented herein demonstrate that PINNs not only can solve ill-posed problems, which are beyond the reach of traditional computational methods, but they can also bridge the gap between computational and experimental heat transfer.

Engineering↗
DOE OSTI2023

GATE Center of Excellence in Innovative Drivetrains in Electric Automotive Technology Education (IDEATE) (Final Report)

The IDEATE project recognized that this is a critical point in history where advanced engineering solutions are required to propel the U.S. automotive industry irrevocably to the next level: the electrified drivetrain. The existing workforce is not sufficient to this task. It is imperative that automotive engineers with traditional backgrounds focused on internal-combustion and mechanical-drivetrain technologies be retrained with the most current advanced solutions in battery controls and vehicle power electronics. For the long-term success of the U.S. automakers, it is even more important that a future workforce be developed that has both broad and deep comprehension of the issues involved and the most advanced solutions known to these problems. Two campuses of the University of Colorado system joined forces to establish the GATE Center of Excellence in Innovative Drivetrains in Electric Automotive Technology Education (IDEATE). The University of Colorado Boulder (CU-Boulder) is widely regarded as having one of the top graduate programs in power electronics in the country; the University of Colorado Colorado Springs (UCCS) has unrivaled expertise in algorithms for automotive battery control. By collaborating, IDEATE built on our team’s proven strengths to develop innovative curricula and to initiate courses and programs that have provided (and continue to provide) students with a unique opportunity for holistic and specialty education in electric drivetrain technology (part-way through the project, we invited Utah State University to join the project, adding to our strength in power electronics for battery application).

42 ENGINEERING↗
NASA NTRS1980

Nuclear electro-optic power

Tertiary-nuclear power cell utilizes alpha source from which radiated particles strike phosphore which in turn emits photons that are converted to electricity by solar cell. Experiments indicated that device is capable of providing sufficient power for numerous electronic applications where reliability and long life are important.

Singh, J. J.↗
DOE OSTI2021

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, and other applications due to its ultra- wide bandgap and low projected fabrication cost of high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles. Successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, providing opportunities for predictive process simulation. We use first-principles defect equilibrium calculations to simulate a 3-step growth- annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen- oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. This type converted Ga2O3 can create significant built-in field in a p-n junction with an adjoining n-type material and could enable vertical MOSFETs.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗
DOE OSTI2025

High Speed Medium Voltage CHP System with Advanced Grid Support

The project was a collaboration between Clemson University and TECO Westinghouse Motor Company. The goal of the project was to develop a medium voltage commercial grid-tied system with advanced grid support functions. Current state-of-the-art in medium voltage, multi-megawatt power electronic systems do not support advanced grid functions, traditionally due to power electronic limitations and required applications. The developed system is capable of interacting with the power system at the distribution level to efficiently integrate gas turbine generation systems or any other ac generation system with up to 20MWe of power production capacity. This project demonstrated a high level of technical readiness of the 1MW, 500Hz, 15000 RPM high frequency Combined Heat and Power (CHP) generator and electric machine system, utilizing advanced grid support functions required by IEEE Std. 1547-2018.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Power Converter Topologies for Electrolyzer Applications to Enable Electric Grid Services

Hydrogen electrolyzers, with their operational flexibility, can be configured as smart dynamic loads which can provide grid services and facilitate the integration of more renewable energy sources into the electrical grid. However, to enable this ability, the electrolyzer system should be able to control both active and reactive power in coordination with the low-level controller of the electrolyzer via the power electronics system interface between the utility grid and electrolyzer. This paper discusses power converter topologies and the control scheme of this power electronics interface for electrolyzer applications to enable electricity grid services. For the sake of unity, in this paper, we consider the power converter system interfacing the utility grid at the line-to-line root mean square (RMS) value of 480 VAC-60 Hz and supplying to the 3500 A-750 kW PEM electrolyzer stack.

electrolyzer↗