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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

New techniques for far-infrared filters.

The techniques considered make it possible to construct high performance low-pass wide-band, and medium-band filters at wavelengths in the range from 25 to 300 micrometers. Short wavelength rejection without appreciable loss at long wavelengths is achieved by means of small particle scattering. Spectral definition in the far infrared is obtained by cooling one or more crystalline materials to liquid-He or liquid-nitrogen temperatures. The problem of reflection losses at the various surfaces is solved by a new antireflection coating technique.

Armstrong, K. R.↗
NASA NTRS1974

Methods of improving the efficiency of photovoltaic cells

Work on aluminum-alloyed silicon grating cells is continued. Optimization of the geometry (grating line width and spacing) confirms the analysis of such cells. A 1 sq cm grating cell was fabricated and its i-V characteristic was measured under an AMO solar simulator. It is found that the efficiency of this cell would be about 7.9%, if it were covered by the usual antireflection coating. The surface of the cell is not covered by a diffused junction. The response is blue shifted; the current is somewhat higher than that produced by a commercial Si cell. However, the open circuit voltage is low, and attempts to optimize the open circuit voltage of the aluminum-alloy junctions are described. A preliminary X-ray topographic examination of GaAs specimens of the type commonly used to make solar cells is studied. The X-ray study shows that the wafers are filled with regions having strain gradients, possibly caused by precipitates. It is possible that a correlation exists between the presence of low mechanical perfection and minority carrier diffusion lengths of GaAs crystals.

Loferski, J. J.↗
NASA NTRS1975

Development of processing procedures for advanced silicon solar cells

Ten ohm-cm silicon solar cells, 0.2 mm thick, were produced with short circuit current efficiencies up to thirteen percent and using a combination of recent technical advances. The cells were fabricated in conventional and wraparound contact configurations. Improvement in cell collection efficiency from both the short and long wavelengths region of the solar spectrum was obtained by coupling a shallow junction and an optically transparent antireflection coating with back surface field technology. Both boron diffusion and aluminum alloying techniques were evaluated for forming back surface field cells. The latter method is less complicated and is compatible with wraparound cell processing.

Scott-Monck, J. A.↗
NASA NTRS1975

Spatially coherent radiation from an array of GaAs lasers

Spatially coherent radiation from a monolithic array of three homostructure GaAs lasers is reported. The three lasers, with their mirror faces antireflection coated, are operated in an external optical cavity built of spherical lenses and plane mirrors. The spatially coherent beam formation makes use of the Fourier transformation property of the internal lenses. The transverse mode control is performed by a spatial filter. The optical peak power at room temperature of the device was measured to be 5 W, three times the power of a single laser in the array. From the synthesized far-field distribution which was evaluated, we conclude that the laser radiation is of spatial coherence.

Philipp-Rutz, E. M.↗
NASA NTRS1975

Current status of silicon solar cell technology

In quest of higher efficiency, major progress has occurred in solar cell technology. Cell efficiency has climbed about 50 percent. Technical approaches leading to increased output include back surface fields, shallow junctions, improved antireflection coatings, surface texturizing, and fine grid patterns on the cell surface. The status of current solar cell technology and its incorporation into cell production is discussed. Research and development leading to improved performance and reduced cost are also described.

Brandhorst, H. W., Jr.↗
NASA NTRS1975

Development of a high efficiency thin silicon solar cell

Specific power output and radiation resistance characteristics developed for thin film silicon solar cells are reported. The technological base for fabricating these high efficiency cells and limitations of cell photovoltage are included. In addition, optical and electronic measurement instrumentation and mathematical analyses aids are included. Antireflection coatings for these cells are discussed.

Lindmayer, J.↗
NASA NTRS1975

Low cost AMOS solar cell development

Recent developments at JPL have demonstrated that high conversion efficiencies are found with GaAs metal semiconductor solar cells when a particular heat treatment processing step is used to introduce an interfacial layer between the metal and the semiconductor. The new cell, called AMOS (Antireflection-Coated Metal-Oxide-Semiconductor), has open circuit voltages of 0.68-0.72 volts and efficiencies of 15% under terrestrial sunlight, as compared to values of 0.45-0.48 volts and 10%, respectively, for similar cells without an interfacial layer. Potentially higher efficiencies are feasible as further improvements are made in optimizing the interfacial layer effect and in increasing the blue response of the cells. A thin film AMOS cell is proposed that uses a thin recrystallized germanium (Ge) layer between a low cost metal substrate and the vapor phase epitaxially (VPE)-grown GaAs.

Stirn, R. J.↗
NASA NTRS1975

Glass-Si heterojunction solar cells

Experimental studies and models for In2O3/Si and SnO2/N-Si solar cells are considered for their suitability in terrestrial applications. The silicon is the active material, and the glass serves as the window to solar radiation, an antireflection coating of the Si, and a low resistance contact. Results show that amorphous windows or layers suppress photocurrent. The interfacial SiO2 layer suppresses photocurrent and increases series resistance. Suppression increases with illumination.

Anderson, R. L.↗
NASA NTRS1975

Development of a high efficiency thin silicon solar cell

Variations in temperatures used in experimental processing and their effect on the resulting solar cell performance parameters were investigated. Diffusion temperature variation results in a fairly distinct optimum cell performance for diffusion temperatures in the immediate vicinity of 850 C. An additional effort was also devoted to redesign of the matallization gridline pattern for both minimum light blockage and minimum fill factor alteration due to series resistance. Efforts on improvement of tantalum oxide antireflection coatings were undertaken. Fifty 2 cm x 2 cm cells having a range of thicknesses have been submitted as the first sample group. These cells were processed under conditions tentatively identified during this first contractual quarter's experiments as being optimal for resulting cell performance.

Lindmayer, J.↗
NASA NTRS1975

Single laser beam of spatial coherence from an array of GaAs lasers - Free-running mode

Spatially coherent radiation from a monolithic array of three GaAs lasers in a free-running mode is reported. The lasers, with their mirror faces antireflection coated, are operated in an external optical cavity built of spherical lenses and plane mirrors. The spatially coherent-beam formation makes use of the Fourier-transformation property of the internal lenses. Transverse mode control is accomplished by a spatial filter. The optical cavity is similar to that used for the phase-controlled mode of spatially coherent-beam formation; only the spatial filters are different. In the far field (when restored by an external lens), the intensities of the lasers in the array are concentrated in a single laser beam of spatial coherence, without any grating lobes. The far-field distribution of the laser array in the free-running mode differs significantly from the interference pattern of the phase-controlled mode. The modulation characteristics of the optical waveforms of the two modes are also quite different because modulation is related to the interaction of the spatial filter with the longitudinal modes of the laser array within the optical cavity. The modulation of the optical waveform of the free-running mode is nonperiodic, confirming that the fluctuations of the optical fields of the lasers are random.

Philipp-Rutz, E. M.↗
NASA NTRS1976

Theoretical analysis of Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A practical theoretical analysis of an n/p graded band-gap Al(x)Ga(1-x)As-GaAs solar cell indicates that the presence of a built-in electric field acting on holes in the surface layer increases the hole collection efficiency of a nearly optimum cell to a maximum of 97.8%. The electric field is created by the band-gap gradient and serves to reduce the surface hole recombination by 97% and reduce the bulk hole recombination by 80%, compared to a similar GaAs cell. These reduced losses increase cell response substantially for wavelengths less than 0.59 micron and yield a maximum air-mass-zero efficiency of 17.7% (not corrected for a 13% front-surface contact). The model includes an optimized antireflection coating, series resistance, and junction-recombination current.

Hutchby, J. A.↗
NASA NTRS1976

Theoretical optimization and parametric study of n-on-p Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A comprehensive theoretical model of the graded band-gap Al(x)Ga(1-x)As-GaAs solar cell is used to optimize the n-on-p cell. The model includes power losses due to surface, bulk, and junction minority-carrier recombination, series resistance, and photon reflection from an SiO antireflection coating of optimum thickness. The optimized cell has a junction depth/graded band-gap layer thickness of 1.0 micron, respective donor and acceptor concentrations of 4 x 10 to the 17th power and 2 x 10 to the 17th power per cu cm, and a surface AlAs mode fraction of x = 0.35. The optimized graded band-gap cell has an air-mass-zero efficiency of 17.7% (not corrected for a 13% front surface contact area) and is shown to be less sensitive than a similar n-on-p GaAs cell to material degradation in the form of decreased minority-carrier diffusion lengths and increased surface-recombination velocity

Hutchby, J. A.↗
NASA NTRS1976

Status of silicon solar cell technology

Major progress in solar cell technology leading to increased efficiency has occurred since 1970. Technical approaches leading to this increased output include surface texturing, improved antireflection coatings, reduced grid pattern area coverage, shallow junctions and back surface fields. The status of these developments and their incorporation into cell production is discussed. Future research and technology trends leading to further efficiency increases and substantial cost reductions are described.

Brandhorst, H. W., Jr.↗
NASA NTRS1976

A program continuation to develop processing procedures for advanced silicon solar cells

Shallow junctions, aluminum back surface fields and tantalum pentoxide (Ta205) antireflection coatings coupled with the development of a chromium-palladium-silver contact system, were used to produce a 2 x 4 cm wraparound contact silicon solar cell. One thousand cells were successfully fabricated using batch processing techniques. These cells were 0.020 mm thick, with the majority (800) made from nominal ten ohm-cm silicon and the remainder from nominal 30 ohm-cm material. Unfiltered, these cells delivered a minimum AMO efficiency at 25 C of 11.5 percent and successfully passed all the normal in-process and acceptance tests required for space flight cells.

Avery, J. E.↗
NASA NTRS1976

Status of silicon solar cell technology

It is pointed out that during the time from 1970 to 1976 the efficiency of solar cells has increased from 10.5 to 15.5%. Most of the increased output has resulted from increased short circuit current. Advances leading to this improvement in performance are discussed, taking into account a reduction in the area covered by the grid pattern, the use of antireflection coatings, and the employment of surface texturizing. A widespread use of solar cells for nonspace applications requires a reduction in the cost of solar cell arrays from the present $20 per watt to 10 to 50 cents per watt. Approaches for achieving this objective are considered. Attention is given to an automated, high volume production of solar cells made from ribbon silicon or thin film layers.

Brandhorst, H. W., Jr.↗
NASA NTRS1977

Technology of GaAs metal-oxide-semiconductor solar cells

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

Stirn, R. J.↗
NASA NTRS1976

A new lightweight solar cell

Highly reproducible, very thin (40-80 microns thick) silicon solar cells are examined. These cells are the product of silicon thinning techniques that produce very flexible, resilient slices as compared to other techniques. Measurements on solar cells 2 cm by 2 cm by 50 microns thick producing 60 mW or more at AM0 are described. These cells have fine-line metallizations, tantalum oxide antireflection coatings and back-surface aluminum alloy.

Lindmayer, J.↗