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At least 91 records · Page 5

Shock-implanted noble gases. II - Additional experimental studies and recognition in naturally shocked terrestrial materials

The process by which ambient gases can be implanted into silicates by shocks was investigated by analyzing the noble-gas content of several experimentally and naturally shocked silicate samples. The retentivity of shock-implanted gas during stepwise heating in the laboratory was defined in terms of two parameters, namely, the activation energy for diffusion and the extraction temperature at which 50 percent of the gas is released, both of which correlate with the shock pressure. The experiments indicate that, with increasing shock pressure, gas implantation occurs through an increasing production of microcracks/defects in the silicate lattice. The degree of annealing of these defects control the degree of diffusive loss of implanted gas.

Bogard, Donald↗

Theoretical Study of Response of InGaAs Metal-Semiconductor-Metal Photodetectors

We present a theoretical investigation of the response of metal-semiconductor-metal (MSM) photodetectors made of InGaAs lattice-matched to InP using a two-dimensional drift-diffusion model with a thermionic-field emission boundary condition for the heterojunctions. The effect of including a top InAlAs layer to increase the effective barrier height of the metal fingers on the InGaAs active layer is thoroughly examined and found to limit the collection of the photocurrent signal due to the electron and hole barriers that it forms with InGaAs. Due to the thickness and height of the InAlAs barrier layer in existing designs, the tunneling current obtained from the model is found to be negligibly small to significantly affect the output signal current. In an attempt to obtain a better response, different design structures including one where a quasi-Schottky contact is utilized are studied and their speed of response, breakdown voltage, and dark current are compared to that of the usual InGaAs device.

Salem, Ali F.↗

The metal to metal interface and its effect on adhesion and friction

The paper considers the interface between two bulk metals and the effect of this interface on adhesive bonding, resistance to tangential displacements, friction and the interfacial transport from one surface to another. Using Auger emission spectroscopy, field ion microscopy, and low energy electron diffraction techniques, the influence of surface orientation, lattice registry, crystal lattice structure and defects, metal surface chemistry and alloying on the characteristics of the interface was studied for noble, platinum, transition, and Group 4B metals. With dissimilar metals in contact, epitaxial transfer of the cohesively weaker to the cohesively stronger metal has been observed. Surface chemical activity of the noble and platinum metals is shown to affect interfacial behavior as does a valence bonding in the transition metals, and the degree of metallic nature in the Group 4B elements. Alloying elements, e.g., Si and Fe, can alter interfacial behavior by segregation to the surface of metals or by altering bulk properties such as crystal transformation kinetics.

Buckley, D. H.↗

Photon degradation effects in terrestrial solar cells

Reduction in cell output was observed in N(+)/P cells upon exposure to illumination or upon the application of a sufficiently high forward bias. Conversely, an enhancement in output was observed when P(+)/N cells were illuminated. Investigations performed on N(+)/P cells indicated that a recombination center located at E sub c - 0.37 eV in the forbidden band was responsible for the loss in output. The center was electrically inactive in its ground state but was activated either by raising the minority carrier quasi-Fermi level sufficiently close to the latent center energy level in the band gap, or by direct excitation of electrons from the valence band to the latent center level. The center was identified as a complex of a lattice defect and a silver atom or cluster of atoms.

Weizer, V. G.↗

Luminescence induced by dehydration of kaolin - Association with electron-spin-active centers and with surface activity for dehydration-polymerization of glycine

Experimental data concerning emission of light upon dehydration as a function of preheating and pre-gamma-irradiation are correlated with reported studies of electron-spin resonance (ESR) activity after similar pretreatments. The effect of these pretreatments on the kaolin-promoted incorporation of glycine into peptide oligomers in a wet/cold, hot/dry fluctuating environment is compared to their effect on the ESR and luminescent signals. The existence of spectroscopically active centers appears to be loosely anticorrelated with reaction yield; these yields are increased by increasing the overall energy content of the material. It is concluded that some part of the chemical yield is produced by a mechanism involving intrinsic, excited electronic states of the clay crystal lattice. These states may be derived from thermally, interfacially, and/or mechanically induced charge reorganization within interspersed energy levels in the band structure of the material.

Coyne, L.↗

Comet Dust After Deep Impact

When the Deep Impact Mission hit Jupiter Family comet 9P/Tempel 1, an ejecta crater was formed and an pocket of volatile gases and ices from 10-30 m below the surface was exposed (A Hearn et aI. 2005). This resulted in a gas geyser that persisted for a few hours (Sugita et al, 2005). The gas geyser pushed dust grains into the coma (Sugita et a1. 2005), as well as ice grains (Schulz et al. 2006). The smaller of the dust grains were submicron in radii (0-25.3 micron), and were primarily composed of highly refractory minerals including amorphous (non-graphitic) carbon, and silicate minerals including amorphous (disordered) olivine (Fe,Mg)2SiO4 and pyroxene (Fe,Mg)SiO3 and crystalline Mg-rich olivine. The smaller grains moved faster, as expected from the size-dependent velocity law produced by gas-drag on grains. The mineralogy evolved with time: progressively larger grains persisted in the near nuclear region, having been imparted with slower velocities, and the mineralogies of these larger grains appeared simpler and without crystals. The smaller 0.2-0.3 micron grains reached the coma in about 1.5 hours (1 arc sec = 740 km), were more diverse in mineralogy than the larger grains and contained crystals, and appeared to travel through the coma together. No smaller grains appeared at larger coma distances later (with slower velocities), implying that if grain fragmentation occurred, it happened within the gas acceleration zone. These results of the high spatial resolution spectroscopy (GEMINI+Michelle: Harker et 4. 2005, 2006; Subaru+COMICS: Sugita et al. 2005) revealed that the grains released from the interior were different from the nominally active areas of this comet by their: (a) crystalline content, (b) smaller size, (c) more diverse mineralogy. The temporal changes in the spectra, recorded by GEMIM+Michelle every 7 minutes, indicated that the dust mineralogy is inhomogeneous and, unexpectedly, the portion of the size distribution dominated by smaller grains has a more diverse mineralogy. The lower spatial resolution, high sensitivity Spitzer IRS data reveal resonances of refractory minerals (those seen by GEMINI+Michelle plus ortho-pyroxene)) as well resonances that can be attributed to phillosilicates (layer lattice silicates such as Montmorillonite) (Lisse et al. 2006). Pre- and post-impact, micron to submicron grains were deciphered to be present in the coma by the modeling the high spatial resolution images to account for nucleus plus inner coma fluxes (Wooden et al. 2005, 2006; Harker et al. 2005, 2006a). Note also that crystalline silicates were released from the interior of 73P-B/SW-3 as it disintegrated (Harker et al. 2006b). From the Deep Impact and the disintegration of 73P-B, we are led to ask the questians: Why is the mineralogy of the dust released from a volatile-rich pocket beneath the surface different from the dust that is released from the nominally active areas? Could the most volatile pockets be exhausted quickly? Why would crystalline silicates be associated with more volatile materials? Perhaps the structure of the comet is so inhomogeneous, e.g., the layered pile mode2 of the nucleus (Belton et al. 2006), that a reservoir of crystalline silicate and submicron grains just happens to not be released by the nominally active areas of comet 9P? Perhaps comets lose matter through their mantles from below their surfaces, thus preserving ancient topographic structures and radiation damaged silicates and carbon? We will discuss and ponder different scenarios. We will discuss future directions for coordinated observations of JF comets.

Wooden, Diane H.↗

Wear and interfacial transport of material

Bonding across the interface for two solids in contact and the subsequent transfer of material from one surface to another is a direct result of the interfacial bonds being stronger than the cohesive bonds in either of the two solids. Surface tools such as LEED, Auger emission spectroscopy, field ion microscopy, and the atom probe are used to examine adhesive contacts and to determine the direction, nature, quantity of material transfer and properties of the solids which effect transfer and wear. The electronic nature, cohesive binding energies, surface structure, lattice disregistry and distribution of species in surface layers are all found to effect adhesion and transfer or transport for clean surfaces in solid state contact. The influence of adsorbed and reacted surface films from fractions of a monolayer to multilayer reactive films are considered. It is shown that even fractions of a monolayer of surface active species such as oxygen and sulfur can markedly inhibit adhesion and transport.

Buckley, D. H.↗

Comparative Study of Active Flow Control Strategies for Lift Enhancement of a Simplified High-Lift Configuration

Numerical simulations have been performed for a simplified high-lift (SHL) version of the Common Research Model (CRM) configuration, where the Fowler flaps of the conventional high-lift (CRM-HL) configuration are replaced by a set of simple hinged flaps. These hinged flaps are equipped with integrated modular active flow control (AFC) cartridges on the suction surface, and the resulting geometry is known as the CRM-SHL-AFC configuration. The main objective is to make use of AFC devices on the CRM-SHL-AFC configuration to recover the aerodynamic performance (lift) of the CRM-HL configuration. In the current paper, a Lattice Boltzmann method-based computational fluid dynamics (CFD) code, known as PowerFLOWQ® is used to simulate the entire flow field associated with the CRM-SHL-AFC configuration equipped with several different types of AFC devices. The transonic version of the PowerFLOWQ® code that has been validated for high speed flows is used to accurately simulate the flow field generated by the high-momentum actuators required to mitigate reversed flow regions on the suction surfaces of the main wing and the flap. The numerical solutions predict the expected trends in aerodynamic forces as the actuation levels are increased. More efficient AFC systems and actuator arrangements emerged based on the parametric studies performed prior to a Fall 2018 wind tunnel test. Preliminary comparisons of the numerical solutions for lift and surface pressures are presented here with the experimental data, demonstrating the usefulness of CFD for predicting the flow field and lift characteristics of AFC-enabled high-lift configurations.

Vatsa, Veer N.↗

Characterization of Mn-doped In(1-x)Ga(x)As(y)P(1-y) grown by LPEE

Mn-doped In(1-x)Ga(x)As(y)P(1-y) epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxial (LPEE) technique. The variation of growth velocity of the epilayers with current density and the doping characteristics of Mn in the epilayer has been studied. The temperature dependence of the hole concentration and the mobility has been analyzed to determine the donor and acceptor densities, thermal activation energy of the level associated with Mn and the dominant scattering mechanisms that limit the hole mobility. The photoluminescence spectra of the doped epilayers are examined at 10 K as a function of the excitation level.

Iyer, Shanthi N.↗

X-ray Microscopic Characterization of Protein Crystals

The microscopic mapping of the variation in degree of perfection and in type of defects in entire protein crystals by x-rays may well be a prerequisite for better understanding causes of lattice imperfections, the growth history, and properties of protein crystals. However, x-ray microscopic characterization of bulk protein crystals, in the as-grown state, is frequently more challenging than that of small molecular crystals due to the experimental difficulties arising largely from the unique features possessed by protein crystals. In this presentation, we will illustrate ssme recent activities in employing coherence-based phase contrast x-ray imaging and high-angular-resolution diffraction techniques for mapping microdefects and the degree of perfection of protein crystals, and demonstrate a correlation between crystal perfection, diffraction phenomena., and crystallization conditions. The observed features and phenomena will be discussed in context to gain insight into the nature of defects, nucleation and growth, and the properties of protein crystals.

Hu, Z. W.↗

Properties of undoped and manganese-doped InGaAsP grown by liquid phase electroepitaxy

Undoped and manganese-doped InGaAsP epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxy technique. The dependence of growth velocity on current density for both undoped and doped layers has been studied. Layers of good surface morphology with hole concentrations in the range from 8 x 10 to the 16th to 4 x 10 to the 18th/cu cm have been achieved. The activation energy of the manganese acceptor level was estimated to vary from 57 to 32 meV with increasing hole concentration. The temperature dependence of carrier mobility data was analyzed in terms of different scattering mechanisms and the values of acceptor and donor densities determined were compared with those obtained from the temperature variation of Hall concentration data. Dependences of photoluminescence peak energy and intensity on the temperature and incident excitation levels have been investigated.

Iyer, Shanthi N.↗

Diffusion Quantum Monte Carlo Calculation of the Austenite and Martensite Phases of NiTi

NiTi is a promising material for smart and active technologies due to its exhibition of the shape memory effect, superelasticity, and biocompatibility. The shape memory effect is tied to the reversible transition between the austenite and martensite phases. A major research direction is to alloy NiTi with Zr, Hf, Pd, Pt, etc., in order to tune the martensitic transition temperature (MTT). Modeling the MTT from first principles is challenging because the lattice dynamics is complicated by anharmonicity and various low-energy structures. Using density functional theory, the energy difference between the austenite and martensite phases of NiTi varies by up to 100 meV/atom depending on the choice of density functional, which is of the same order of the energy difference itself. Consequently, free energy calculations with different functionals can result in estimates of the MTT that vary by several hundred K. Using diffusion quantum Monte Carlo, we calculated the energy difference between the B2 and B19' structures of NiTi to be 70.9 +- 2.5 meV/atom.

Kevin K Ly↗

What Reliability Engineers Should Know about Space Radiation Effects

Space radiation in space systems present unique failure modes and considerations for reliability engineers. Radiation effects is not a one size fits all field. Threat conditions that must be addressed for a given mission depend on the mission orbital profile, the technologies of parts used in critical functions and on application considerations, such as supply voltages, temperature, duty cycle, and redundancy. In general, the threats that must be addressed are of two types-the cumulative degradation mechanisms of total ionizing dose (TID) and displacement damage (DD). and the prompt responses of components to ionizing particles (protons and heavy ions) falling under the heading of single-event effects. Generally degradation mechanisms behave like wear-out mechanisms on any active components in a system: Total Ionizing Dose (TID) and Displacement Damage: (1) TID affects all active devices over time. Devices can fail either because of parametric shifts that prevent the device from fulfilling its application or due to device failures where the device stops functioning altogether. Since this failure mode varies from part to part and lot to lot, lot qualification testing with sufficient statistics is vital. Displacement damage failures are caused by the displacement of semiconductor atoms from their lattice positions. As with TID, failures can be either parametric or catastrophic, although parametric degradation is more common for displacement damage. Lot testing is critical not just to assure proper device fi.mctionality throughout the mission. It can also suggest remediation strategies when a device fails. This paper will look at these effects on a variety of devices in a variety of applications. This paper will look at these effects on a variety of devices in a variety of applications. (2) On the NEAR mission a functional failure was traced to a PIN diode failure caused by TID induced high leakage currents. NEAR was able to recover from the failure by reversing the current of a nearby Thermal Electric Cooler (turning the TEC into a heater). The elevated temperature caused the PIN diode to anneal and the device to recover. It was by lot qualification testing that NEAR knew the diode would recover when annealed. This paper will look at these effects on a variety of devices in a variety of applications. Single Event Effects (SEE): (1) In contrast to TID and displacement damage, Single Event Effects (SEE) resemble random failures. SEE modes can range from changes in device logic (single-event upset, or SEU). temporary disturbances (single-event transient) to catastrophic effects such as the destructive SEE modes, single-event latchup (SEL). single-event gate rupture (SEGR) and single-event burnout (SEB) (2) The consequences of nondestructive SEE modes such as SEU and SET depend critically on their application--and may range from trivial nuisance errors to catastrophic loss of mission. It is critical not just to ensure that potentially susceptible devices are well characterized for their susceptibility, but also to work with design engineers to understand the implications of each error mode. -For destructive SEE, the predominant risk mitigation strategy is to avoid susceptible parts, or if that is not possible. to avoid conditions under which the part may be susceptible. Destructive SEE mechanisms are often not well understood, and testing is slow and expensive, making rate prediction very challenging. (3) Because the consequences of radiation failure and degradation modes depend so critically on the application as well as the component technology, it is essential that radiation, component. design and system engineers work togetherpreferably starting early in the program to ensure critical applications are addressed in time to optimize the probability of mission success.

DiBari, Rebecca↗

Effect of a 17 day spaceflight on contractile properties of human soleus muscle fibres

1. Soleus biopsies were obtained from four male astronauts 45 days before and within 2 h after a 17 day spaceflight. 2. For all astronauts, single chemically skinned post-flight fibres expressing only type I myosin heavy chain (MHC) developed less average peak Ca2+ activated force (Po) during fixed-end contractions (0.78 +/- 0. 02 vs. 0.99 +/- 0.03 mN) and shortened at a greater mean velocity during unloaded contractions (Vo) (0.83 +/- 0.02 vs. 0.64 +/- 0.02 fibre lengths s-1) than pre-flight type I fibres. 3. The flight-induced decline in absolute Po was attributed to reductions in fibre diameter and/or Po per fibre cross-sectional area. Fibres from the astronaut who experienced the greatest relative loss of peak force also displayed a reduction in Ca2+ sensitivity. 4. The elevated Vo of the post-flight slow type I fibres could not be explained by alterations in myosin heavy or light chain composition. One alternative possibility is that the elevated Vo resulted from an increased myofilament lattice spacing. This hypothesis was supported by electron micrographic analysis demonstrating a reduction in thin filament density post-flight. 5. Post-flight fibres shortened at 30 % higher velocities than pre-flight fibres at external loads associated with peak power output. This increase in shortening velocity either reduced (2 astronauts) or prevented (2 astronauts) a post-flight loss in fibre absolute peak power (microN (fibre length) s-1). 6. The changes in soleus fibre diameter and function following spaceflight were similar to those observed after 17 days of bed rest. Although in-flight exercise countermeasures probably reduced the effects of microgravity, the results support the idea that ground-based bed rest can serve as a model of human spaceflight. 7. In conclusion, 17 days of spaceflight decreased force and increased shortening velocity of single Ca2+-activated muscle cells expressing type I MHC. The increase in shortening velocity greatly reduced the impact that impaired force production had on absolute peak power.

Clinical Trial↗

Effects of space plasma discharge on the performance of large antenna structures in low Earth orbit

The anomalous plasma around spacecrafts in low Earth orbit represents the coma of an artificial comet. The plasma discharge is caused by an energetic disturbance of charged particles which were formerly in a state of equilibrium. The plasma can effect the passive and active radio frequency operation of large space antennas by inducing corona discharge or strong arcing in the antenna feeds. One such large space antenna is the 15-meter hoop column antenna which consists of a mesh membrane material (tricot knitted gold plated wire) reflector and carbon fiber tension cords. The atomic oxygen in the plasma discharge state can force the wire base metal particles through the gold lattice and oxydize the metal particles to build a Schottky-barrier contact at the point where the wires meet. This effect can cause strong deviations in the reflector performance in terms of antenna pattern and losses. Also, the carbon-fiber cords can experience a strength reduction of 30 percent over a 40-hour exposure time.

Blume, Hans-Juergen C.↗

Formula for the Removal and Remediation of Polychlorinated Biphenyls in Painted Structures

An activated metal treatment system (AMTS) removes and destroys polychlorinated biphenyls (PCBs) found in painted structures or within the binding or caulking material on structures. It may be applied using a "paint-on and wipe-off" process that leaves the structure PCB-free and virtually unaltered in physical form. AMTS is used in conjunction with a solvent solution capable of donating hydrogen atoms. AMTS as a treatment technology has two functions: first, to extract PCBs from the material, and second, to degrade the extracted PCBs. The process for removing PCBs from structures is accomplished as an independent step to the degradation process. The goal is to extract the PCBs out of the paint, without destroying the paint, and to partition the PCBs into an environmentally friendly solvent. The research to date indicates this can be accomplished within the first 24 hours of AMTS contact with the paint. PCBs are extremely hydrophobic and prefer to be in the AMTS over the hardened paint or binder material. The solvent selected must be used to open, but not to destroy, the paint s polymeric lattice structure, allowing pathways for PCB movement out of the paint and into the solvent. A number of solvent systems were tested and are available for use within the AMTS. The second process of the AMTS is the degradation or dehalogenation of the PCBs. The solvent selection for this process is limited to solvents that are capable of donating a hydrogen atom to the PCB structure. Additional AMTS formulation properties that must be addressed for each site-specific application include viscosity and stability. The AMTS must be thick enough to remain where it is applied. Several thickening agents have been tested. Adding a stabilizing agent ensures that the AMTS will not evaporate and leave unprotected, activated metal exposed. During AMTS formulation testing, a number of reagents were evaluated to ensure the rate of dehalogenation was not inhibited by its addition to the system.

Quinn, Jacqueline↗

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

transistor↗

Toward a III-V Multijunction Space Cell Technology on Si

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Ringel, S. A.↗