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At least 91 records · Page 5

Electrical control of coherent spin rotation of a single-spin qubit

Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. One of the critical challenges to develop NV-based quantum operation platforms results from the difficulty in locally addressing the quantum spin states of individual NV spins in a scalable, energy-efficient manner. Here, we report electrical control of the coherent spin rotation rate of a single-spin qubit in NV-magnet based hybrid quantum systems. By utilizing electrically generated spin currents, we are able to achieve efficient tuning of magnetic damping and the amplitude of the dipole fields generated by a micrometer-sized resonant magnet, enabling electrical control of the Rabi oscillation frequency of NV spins. Our results highlight the potential of NV centers in designing functional hybrid solid-state systems for next-generation quantum-information technologies. The demonstrated coupling between the NV centers and the propagating spin waves harbored by a magnetic insulator further points to the possibility to establish macroscale entanglement between distant spin qubits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Single nuclear spin detection and control in a van der Waals material

Optically active spin defects in solids are leading candidates for quantum sensing and quantum networking. Recently, single spin defects were discovered in hexagonal boron nitride (hBN), a layered van der Waals (vdW) material. Owing to its two-dimensional structure, hBN allows spin defects to be positioned closer to target samples than in three-dimensional crystals, making it ideal for atomic-scale quantum sensing, including nuclear magnetic resonance (NMR) of single molecules. However, the chemical structures of these defects remain unknown and detecting a single nuclear spin with a hBN spin defect has been elusive. Here we report the creation of single spin defects in hBN using 13 C ion implantation and the identification of three distinct defect types based on hyperfine interactions. We observed both S = 1/2 and S = 1 spin states within a single hBN spin defect. We demonstrated atomic-scale NMR and coherent control of individual nuclear spins in a vdW material, with a π-gate fidelity up to 99.75% at room temperature. By comparing experimental results with density functional theory (DFT) calculations, we propose chemical structures for these spin defects. Our work advances the understanding of single spin defects in hBN and provides a pathway to enhance quantum sensing using hBN spin defects with nuclear spins as quantum memories.

Quantum metrology↗

N-Doped carbon nanoparticles on highly porous carbon nanofiber electrodes for sodium ion batteries

Nitrogen doped carbon nanoparticles on highly porous carbon nanofiber electrodes were successfully synthesized via combining centrifugal spinning, chemical polymerization of pyrrole and a two-step heat treatment. Nanoparticle-on-nanofiber morphology with highly porous carbon nanotube like channels were observed from SEM and TEM images. Nitrogen doped carbon nanoparticles on highly porous carbon nanofiber (N-PCNF) electrodes exhibited excellent cycling and C-rate performance with a high reversible capacity of around 280 mA h g -1 in sodium ion batteries. Moreover, at 1000 mA g -1 , a high reversible capacity of 172 mA h g -1 was observed after 300 cycles. The superior electrochemical properties were attributed to a highly porous structure with enlarged d-spacings, enriched defects and active sites due to nitrogen doping. The electrochemical results prove that N-PCNF electrodes are promising electrode materials for high performance sodium ion batteries.

25 ENERGY STORAGE↗

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

Abstract Silicon carbide (SiC) can be synthesized in a number of different structural forms known as polytypes with a vast array of optically active point defects of interest for quantum information sciences. The ability to control and vary the polytypes during SiC synthesis may offer a powerful methodology for the formation of new material architectures that expand our ability to manipulate these defects, including extending coherence lifetimes and enhancing room temperature operation. Polytypic control during synthesis presents a significant challenge given the extreme conditions under which SiC is typically grown and the number of factors that can influence polytype selection. In situ monitoring of the synthesis process could significantly expand our ability to formulate novel polytype structures. In this perspective, we outline the state of the art and ongoing challenges for precision synthesis in SiC. We discuss available in situ x-ray characterization methods that will be instrumental in understanding the atomic scale growth of SiC and defect formation mechanisms. We highlight optimistic use cases for SiC heterostructures that will become possible with in situ polytypic control and end by discussing extended opportunities for integration of ultrahigh quality SiC materials with other semiconductor and quantum materials.

Harmon, K. J. (ORCID:0000000164277971)↗

Origin of surface and subband states at the InAs(111)A surface

The atomic structure of surfaces and interfaces plays a vital role in the electronic quality and properties of quantum devices. The interplay between the surface and confined bulk subband states in terms of their susceptibility has been investigated in relation to crystal defects on an InAs(111)A-(2×2) reconstructed surface, using low-temperature scanning tunneling microscopy and spectroscopy. We measure the two-dimensional quantized subband states arising from the confined potential imposed by downward bending of the conduction band edge. Furthermore, we show evidence of the existence of surface Bloch states within the confined bulk band gap projected on the surface spectrum which have originated from the surface reconstruction. As expected, larger confined bulk band gaps at the surface and conduction band offset are measured to be 0.58 and 0.31 eV, respectively. Here we further show the scattering of these quantum states at different surface defects and demonstrate that surface states are more susceptible to the defect potential when compared with the corresponding subband states. This apparent contrast follows from the length scale at which these defect potentials actively interact on or near the surface. Our observed experimental results are supported by empirical tight-binding simulations for the subband states and first-principles density functional theory simulations for the surface states present on the surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Anomalous interfacial dynamics of single proton charges in binary aqueous solutions

Our understanding of the dynamics of charge transfer between solid surfaces and liquid electrolytes has been hampered by the difficulties in obtaining interface, charge, and solvent-specific information at both high spatial and temporal resolution. Here, we measure at the single charge scale the dynamics of protons at the interface between an hBN crystal and binary mixtures of water and organic amphiphilic solvents (alcohols and acetone), evidencing a marked influence of solvation on interfacial dynamics. Applying single-molecule localization microscopy to emissive crystal defects, we observe correlated activation between adjacent ionizable surface defects, mediated by the transport of single excess protons along the solid/liquid interface. Solvent content has a nontrivial effect on interfacial dynamics, leading at intermediate water fraction to an increased surface diffusivity, as well as an increased affinity of the proton charges to the solid surface. Our measurements evidence the notable role of solvation on interfacial proton charge transport.

36 MATERIALS SCIENCE↗

Evidence of topological charge polarization at active-passive interfaces in acoustically powered active liquid crystals

Theoretical and computational studies predict topological charge separation at active-passive interfaces in active nematics, but reliable experimental validation has been lacking. We utilize a synthetic acoustically energized liquid crystal to experimentally investigate the dynamics of topological defects across an active-passive interface. The interference pattern induced by the acoustic wave inside the experimental cell creates a spatial distribution of activity, resulting in the formation of active-passive interfaces with the liquid-crystalline director field aligned parallel to those interfaces. The activity gradient drives the reorientation of positively charged topological defects along its direction, causing them to migrate into the passive zone and form a layer with net topological charge. That layer “discharges” upon cessation of activity through annihilation of positive and negative topological charges, resembling the discharge of a capacitor.

Active defects↗

Planarization of p -GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects with semipolar {$10\bar{1}1$}-plane sidewalls generated on surface depressions from threading dislocations. LEDs engineered to intentionally generate V-defects below the active region of the LED can achieve lateral carrier injection through the V-defect sidewalls and have already been able to demonstrate world record wall-plug efficiencies for LEDs in the green-red wavelengths. V-defects can be enlarged during kinetically limited growth where the growth rate of the c-plane GaN is faster than that of their sidewalls, leaving them unfilled. We report on the metal organic chemical vapor deposition growth conditions required to fill in V-defects with p-GaN during epitaxial growth of the LED post the active region. Circular transmission length measurements of Pd/Au contacts processed on p-GaN surfaces with various amounts of unfilled V-defects showed no significant difference in their sheet resistance and specific contact resistance. J–V measurements of LEDs grown with varying unfilled V-defect densities showed no significant difference in the forward bias regime. However, in the reverse bias regime, catastrophic breakdown occurred at markedly lower voltages for samples with larger unfilled V-defect densities. This suggests that unfilled V-defects may act as hotspots for device failure, and planarizing LED surfaces may help prevent early degradation of LED devices.

Chemical vapor deposition↗

Light- and Elevated-Temperature-Induced Degradation-Affected Silicon Cells From a Utility-Scale Photovoltaic System Characterized by Deep-Level Transient Spectroscopy

Photovoltaic modules from a utility-scale field experienced power loss by light- and elevated-temperature-induced degradation (LeTID). Samples from the affected monocrystalline silicon cells are cored and extracted from the module packaging and then laser-scribed to form 2-mm diameter isolated areas. Using deep-level transient spectroscopy, a majority-carrier, hole-trap defect with an activation energy of 0.42 eV is detected on degraded and regenerated samples. The LeTID-degraded sample, however, has a larger signal corresponding to a trap density of 1.1 x 10 13 cm -3 , which is about five times larger than the 2.1 x 10 12 cm -3 trap density of the regenerated sample. An increase in filling pulse time from 50 u s to 20 ms shows a slight decrease in activation energy from 0.42 to 0.36 eV suggesting that the defect level may consist of a band of energy states where shallower states continue to fill with long filling times. The capture rate of the defect is directly measured using an increasing series of filling pulsewidths in 15 to 125 ns range. This leads to a measured capture cross section of 5.1 x 10 -17 cm 2 , and using an approximate defect density of 10 13 cm -3 , the majority-carrier-hole lifetime related to this defect is approximately 100 u s when in the LeTID-degraded state.

charge carrier lifetime↗

Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy

Commercial silicon heterojunction photovoltaic modules, known as amorphous-silicon-based heterojunction with intrinsic thin-film layer (HIT) modules, show average degradation after 10 years in the field. HIT modules weathered outdoors in Colorado and Florida display mostly uniform decreases in intensity when mapped with photoluminescence (PL) imaging compared to a control module. Flash-table-based current-voltage curves show that degradation is dominated by voltage loss. Samples are cored from each of the modules, and deep level transient spectroscopy (DLTS) detects three electron-trap defect states in all modules with activation energies of electron emission from the defects of 0.07, 0.16, and 0.50 eV. DLTS measurements on the weathered modules show an additional deep-level, electron-trap defect state with an activation energy of 0.51 eV and a trap density of approximately 10 12 cm –3 . The capture rate is measured using varying short filling pulse times, and the resulting capture cross section is estimated to be 1.1x10 –16 cm 2 . The development of the weathering-related defect level correlates to decreases in carrier lifetime, PL intensity, and module voltage. Various depths of the space charge region are probed with increments in applied reverse bias and filling-pulse bias. Furthermore, this DLTS depth profiling shows a trend of trap density increasing with less applied reverse bias, suggesting that the weathering-related defect increases carrier recombination toward the interface between the bulk silicon wafer and the junction-forming amorphous-silicon passivation layers.

14 SOLAR ENERGY↗

Titanium nitride prepared by the urea-glass synthesis gives an active electrocatalyst for the oxygen reduction reaction

Rock-salt-structured titanium nitride (TiN) has emerged as a leading earth-abundant electrocatalyst for the oxygen reduction reaction (ORR). We compare TiN prepared in three ways starting from urea: the urea–glass method, by a direct reaction between urea and titanium(IV) chloride, and through a discrete monomeric complex. In the urea-glass route, a new-found [Ti 4 (µ-O) 6 (OC(NH 2 ) 2 ) 12 ] 4+ oxo-bridged titanium–urea precursor can be synthesized in a single-pot reaction at room temperature starting from titanium(IV) chloride, urea, and ethanol with a urea-to-titanium ratio of 6. Subsequent annealing of the polymeric gel that results at 750 °C in an N 2 atmosphere yields phase-pure, TiN particles on the 100 µm size scale. TiN can be deposited as an ink with PiperlON®anion exchange dispersion onto a glassy carbon rotating disk electrode (RDE), and of the three synthesis methods, the urea-glass method gives the most active ORR catalyst. The onset potential for ORR activity is −131 mV vs. Hg/HgO, and Koutecký–Levich analysis of linear-sweep voltammetry recorded at varying rotation rates supports a two-electron reduction pathway to H 2 O 2 , with a rate constant of 0.0172 cm s −1 . The higher activity is ascribed to a more oxygen-rich surface—boh defect sites and active oxygen species—afforeded by the oxo-bridged precursor, corrorborated by X-ray photoelectron spectroscopy (XPS) analysis.

Xie, Wanrui [University of Michigan, Ann Arbor, MI↗

Command of active and responsive elastomers by topological defects and patterns

The project resulted in the development of stimuli-responsive elastomer coatings formed by photopolymerized liquid crystal molecules. The molecular orientation of the liquid crystal elastomers is coupled to rubber-like elasticity. The project developed an approach to produce complex patterns of molecular orientation in elastomers by employing photopatterning technique based on plasmonic metamasks that convert unpolarized incoming light into a transmitted light beam with spatially-varying linear polarization. The polarization-modulated light beam aligns the film of azodye molecules, which serves as the substrate for liquid crystal elastomer coating. The alignment of the azodye molecules follows the polarization pattern with a phase shift of the alignment direction by 90 degrees. The azodye substrate imposes orientation of molecules in the adjacent liquid crystal layer which is preserved after the monomers are polymerized into a liquid crystal elastomer. By using differently aligned substrates one could produce various patterns of molecular orientation in the elastomer, which dictate the mechanical properties of the elastomers and their response to external stimuli such as temperature, humidity, and ultraviolet irradiation. In particular, the predesigned molecular orientation produces deterministically defined topography response of the liquid crystal coatings, in which their free surface changes from flat to either locally elevated or locally compressed, depending on whether the pre-inscribed molecular orientation is predesigned with a splay or bend deformation. The research established that the mechanism of this deterministic relation between the dynamic topography and pre-inscribed molecular orientation is rooted in the change of the tensorial order parameter that characterizes the degree of orientational order, and in the contraction/expansion of polymer molecules in response to the order parameter changes. In particular, lowering the order causes contraction of polymer globules. The work demonstrated that the dynamic topography of elastomer coatings with three-dimensional pattern of orientational order includes up and down motion of the material (along the normal to the coating) and also shifts in lateral directions. We demonstrate that the deterministic relationship between the orientational patterns and variations of coatings’ profile is caused by forces that are mathematically equivalent to active forces in the system of “pullers” or “pushers” in active matter, demonstrating universality of the out-of-equilibrium behavior. The project resulted in theoretical models that predictively describe the dynamic response of coatings. The topography of liquid crystal elastomers is sensitive to stimuli such as temperature, ultraviolet irradiation, and humidity. The applicability of the patterned approach to produce dynamic coatings was expanded from nematic elastomers to their smectic counterparts. The project combined a battery of imaging techniques to unveil the dynamic properties of the coatings, ranging from the state-of-the-art dynamic holographic microscopy to fluorescent confocal polarizing microscopy and polscope microscopy. The research uncovered potential applications of dynamic elastomer coatings, such as control placement of colloidal particles, engineering of living tissues with alignment patterns of cells that follow the orientational order of elastomer coatings. The approach developed in the project can be used to design programmable dynamic coatings with functionalities that mimic biological tissues such as skin.

36 MATERIALS SCIENCE↗

Steam-created grain boundaries for methane C–H activation in palladium catalysts

Defects may display high reactivity because the specific arrangement of atoms differs from crystalline surfaces. We demonstrate that high-temperature steam pretreatment of palladium catalysts provides a 12-fold increase in the mass-specific reaction rate for carbon-hydrogen (C–H) activation in methane oxidation compared with conventional pretreatments. Through a combination of experimental and theoretical methods, we demonstrate that an increase in the grain boundary density through crystal twinning is achieved during the steam pretreatment and oxidation and is responsible for the increased reactivity. The grain boundaries are highly stable during reaction and show specific rates at least two orders of magnitude higher than other sites on the palladium on alumina (Pd/Al 2 O 3 ) catalysts. Theoretical calculations show that strain introduced by the defective structure can enhance C–H bond activation. Introduction of grain boundaries through laser ablation led to further rate increases.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Enhanced spectral purity of WSe 2 quantum emitters via conformal organic adlayers

Quantum emitters in solid-state materials are typically embedded in the bulk of their hosts, making their electronic transitions inaccessible to surface modification. In contrast, two-dimensional materials, with their all-surface nature, offer a platform for tuning quantum emitters via chemical functionalization. Because of its semiconducting properties that enable electrical addressability, monolayer WSe 2 is a promising candidate for quantum emission, although the complex interplay between point defects and the localized strain needed to activate quantum emission leads to poor spectral purity. Here, we demonstrate that functionalizing monolayer WSe 2 with conformal adlayers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) improves quantum emission spectral purity. Optical spectroscopy reveals that PTCDA functionalization lowers defect activation energies by 10 meV and induces a 30 nm redshift in quantum emission wavelength, while preserving the bright and dark exciton energies of monolayer WSe 2 . First-principles calculations corroborate these findings, thus providing molecular-level insight into the underlying mechanism of enhanced spectral purity.

Ananth, Riddhi [Northwestern Univ., Evanston, IL (↗

Active site design enables industrial scale H 2 O 2 electrosynthesis with metal-free catalysts

The electrosynthesis of hydrogen peroxide (H 2 O 2 ) via a two-electron oxygen reduction reaction enables decentralized H 2 O 2 production. While metal-free carbon catalysts are sustainable and low-cost, their performance is hindered by poorly defined active sites and uncontrolled defect states. Here, we resolve these challenges through active site design and catalyst screening using fluorine (F) and nitrogen (N) codoped carbons as model materials. Statistical analysis combined with density functional theoretical calculations reveals that F-induced structural modification and defect passivation optimize OOH* binding, with F-doping and adjacent F atoms predominantly lowering abs ΔG(OOH*). Experimental results confirm that semi-ionic C–F bonds passivate defects in nitrogen-doped carbon, enhancing catalytic activity and durability. The resulting (N, F)-codoped carbon achieves nearly 100% H 2 O 2 selectivity at 0.5–0.65 V versus the reversible hydrogen electrode and maintains > 95% across 0.01–0.65 V versus the reversible hydrogen electrode. In an electrolyzer, (N, F)-codoped carbon exhibits an H 2 O 2 yield rate of 74.35 mol g cat. −1 h -1 and sustains 300 mA cm -2 for 105 hours with ~95% faradaic efficiency. Coupling the two-electron oxygen reduction reaction with methanol oxidation further reduces cell voltage and enhances productivity. This work provides a means to design efficient catalysts for industrial H 2 O 2 electrosynthesis.

H2O2 electrosynthesis↗

Active Sites in the Dealuminated Beta Zeolite-Supported Cobalt Catalyst for Non-Oxidative Ethane Dehydrogenation

Dispersed metal species in siliceous zeolites have been actively studied for non-oxidative dehydrogenation of ethane (NDE). Fundamental insights into the dynamics of metal species in zeolites under reaction conditions have rarely been explored. Herein, we report an atomic level understanding of the dynamics and activity of cobalt (Co) sites in dealuminated Beta zeolite (DeAl-BEA) for NDE during induction and reaction conditions with extensive characterization techniques such as diffuse reflectance UV–vis, solid state nuclear magnetic resonance and X-ray photoelectron, X-ray diffraction along with in situ Fourier transform infrared and X-ray absorption spectroscopy. For a catalyst with 0.5 mass % Co loading, tetrahedral Co 2+ mononuclear sites, di-coordinated to the zeolite framework and with two silanol groups in vicinity (i.e., (≡SiO) 2 Co(HO–Si≡) 2 ), form upon exposure to hydrogen during induction and persist through the NDE reaction. Increasing the Co loading to 3.0 mass % yielded Co sites with similar electronic and coordination structures but slightly elongated Co–O bonds. Upon cooling to room temperature, the Co sites persisted in the same coordination environment, though the disappearance of a feature in the Co K-edge near-edge region revealed changes in the active site’s electronic structure coinciding with modest shifts in bond lengths. The electronic structure and activity of (≡SiO) 2 Co(HO–Si≡) 2 sites were studied comparatively to a few other hypothetical Co 2+ coordination structures, using electronic structure calculations and microkinetic simulations. The simulations showed that NDE is controlled by β-hydride elimination following C–H bond activation and that Co-sites possessing flexibility because of neighboring silanol defects are more active. Interestingly, dinuclear Co–O–Co sites (i.e., (≡SiO)Co(HO–Si≡) 2 –O–(HO–Si≡) 2 Co(≡SiO)) were more active than the mononuclear (≡SiO) 2 Co(HO–Si≡) 2 sites because of favorable hydrogen bonding with the vicinal silanol groups. In conclusion, the present study bridges the gap between the knowledge acquired by ex-situ characterizations and the active sites under the reaction conditions in alkane dehydrogenation chemistry.

36 MATERIALS SCIENCE↗

The Sluggish Diffusion of Cations in CeO 2 Probed through Molecular Dynamics and Metadynamics Simulations

Cation diffusion in fluorite‐structured CeO 2 , though far slower than anion diffusion, is an important, high‐temperature process because it governs diverse fabrication and degradation phenomena. Herein, cation diffusion is studied by means of classical molecular dynamics and metadynamics simulations. Three different mechanisms are examined: migration involving an isolated cerium vacancy, migration involving a cerium vacancy in a defect associate with an oxygen vacancy, and migration involving a cation divacancy. For each mechanism, defect diffusion coefficients are calculated as a function of temperature, from which the respective activation enthalpy of defect migration is obtained. Through comparisons with experimental cation diffusion data (specifically, of the absolute magnitude of the cation diffusivity as well as its activation enthalpy), it is concluded that cation diffusion takes place predominantly neither by isolated vacancies nor by cation vacancy–oxygen vacancy associates but by cation divacancies.

36 MATERIALS SCIENCE↗

Atomic structure of light-induced efficiency-degrading defects in boron-doped Czochralski silicon solar cells

Boron-doped Czochralski (Cz) Si is the most commonly used semiconductor in the fabrication of solar cells. The minority carrier lifetime of boron-doped Cz Si decreases upon exposure to light due to B–O-related defects, which reduce the performance of ~10 9 solar modules worldwide. Using electron paramagnetic resonance (EPR), we have identified the spin-active paramagnetic signatures of this phenomenon and gained insights into its microscopic mechanism. We found a distinct defect signature, which diminished when the degraded sample was annealed. The second signature, a broad magnetic field spectrum, due to the unionized B acceptors, was present in the annealed state but vanished upon light exposure. These observations show that, on degradation, nearly all the ~10 16 cm –3 B atoms in Cz Si complexed with interstitial O atoms, whereas only ~10 12 cm –3 of these complexes created defects that were recombination-active. The formation rate of these recombination-active defects correlated with the decay of the minority carrier lifetime. Furthermore, the line shape parameters linked these defects to both B and O impurities in Cz Si.

14 SOLAR ENERGY↗